CN114144879A - 铜-陶瓷接合体、绝缘电路基板、铜-陶瓷接合体的制造方法及绝缘电路基板的制造方法 - Google Patents
铜-陶瓷接合体、绝缘电路基板、铜-陶瓷接合体的制造方法及绝缘电路基板的制造方法 Download PDFInfo
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- CN114144879A CN114144879A CN202080052644.9A CN202080052644A CN114144879A CN 114144879 A CN114144879 A CN 114144879A CN 202080052644 A CN202080052644 A CN 202080052644A CN 114144879 A CN114144879 A CN 114144879A
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- Prior art keywords
- copper
- ceramic
- active metal
- magnesium oxide
- layer
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- 239000000919 ceramic Substances 0.000 title claims abstract description 181
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000010949 copper Substances 0.000 claims abstract description 202
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 144
- 229910052802 copper Inorganic materials 0.000 claims abstract description 144
- 229910052751 metal Inorganic materials 0.000 claims abstract description 119
- 239000002184 metal Substances 0.000 claims abstract description 119
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 79
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 79
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 26
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 26
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 21
- 150000002739 metals Chemical class 0.000 claims abstract description 21
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 21
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 21
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 21
- 238000005304 joining Methods 0.000 claims abstract description 20
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 91
- 239000011777 magnesium Substances 0.000 claims description 58
- 239000002245 particle Substances 0.000 claims description 46
- 238000010438 heat treatment Methods 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 238000010030 laminating Methods 0.000 claims description 11
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims 2
- 239000012071 phase Substances 0.000 description 27
- 239000010936 titanium Substances 0.000 description 26
- 239000011888 foil Substances 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 8
- 239000007791 liquid phase Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- 238000005219 brazing Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000010406 interfacial reaction Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910020836 Sn-Ag Inorganic materials 0.000 description 2
- 229910020988 Sn—Ag Inorganic materials 0.000 description 2
- 229910018956 Sn—In Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- -1 metal hydride compound Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
一种铜‑陶瓷接合体(10),通过接合由铜或铜合金构成的铜部件(12)和由含氧陶瓷构成的陶瓷部件(11)而成,在铜部件(12)与陶瓷部件(11)之间,在陶瓷部件(11)侧形成有氧化镁层(41),在与氧化镁层(41)接触的铜层(45)的内部分散有活性金属氧化物相,该活性金属氧化物相由选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属的氧化物形成。
Description
技术领域
本发明涉及通过接合由铜或铜合金构成的铜部件和陶瓷部件而成的铜-陶瓷接合体、在陶瓷基板的表面接合由铜或铜合金构成的铜板而成的绝缘电路基板、铜-陶瓷接合体的制造方法及绝缘电路基板的制造方法。
本申请主张基于2019年8月21日于日本申请的特愿2019-151166号的优先权,并将其内容援用于此。
背景技术
功率模块、LED模块及热电模块具有如下结构:在绝缘层的一面形成有由导电材料构成的电路层的绝缘电路基板上,接合有功率半导体元件、LED元件及热电元件。
例如,为了控制风力发电、电动汽车、油电混合汽车等而使用的大功率控制用的功率半导体元件在工作时的发热量多,因此,作为搭载该功率半导体元件的基板,一直以来广泛使用如下绝缘电路基板:该绝缘电路基板具备陶瓷基板和在该陶瓷基板的一面接合导电性优异的金属板而形成的电路层。另外,作为绝缘电路基板,还提供了在陶瓷基板的另一面接合金属板而形成有金属层的绝缘电路基板。
例如,在专利文献1中,提出了通过在陶瓷基板的一面及另一面接合铜板而形成有电路层及金属层的绝缘电路基板。在该专利文献1中,在陶瓷基板的一面及另一面隔着Ag-Cu-Ti系钎料而配置铜板,通过进行加热处理而接合铜板(所谓活性金属钎焊法)。该活性金属钎焊法中,使用了含有作为活性金属的Ti的钎料,因此会提高熔融的钎料与陶瓷基板的润湿性,可良好地接合陶瓷基板与铜板。
并且,在专利文献2中,提出了使用Cu-Mg-Ti系钎料来接合陶瓷基板与铜板的绝缘电路基板。
在该专利文献2中,为通过在氮气气氛下以560~800℃进行加热来接合的结构,Cu-Mg-Ti合金中的Mg升华而不残留于接合界面,且实质上不形成氮化钛(TiN)。
专利文献1:日本专利第3211856号公报(B)
专利文献2:日本专利第4375730号公报(B)
然而,在使用SiC等的高温半导体装置中,由于以高密度安装,因此需要保证绝缘电路板在更高温度下的操作。因此,即使负载比以往严苛的冷热循环的情况下,也要求确保铜板与陶瓷基板的接合可靠性。
并且,在上述绝缘电路基板的电路层中,有时进行端子材等的超声波接合。
在此,记载于专利文献1、2的绝缘电路基板中,为了接合端子材料等而负载有超声波时,在接合界面产生裂纹,有可能导致电路层剥离。
发明内容
本发明是鉴于上述情况而完成的,其目的在于提供即使负载严苛的冷热循环的情况下也能够确保铜部件与陶瓷基板的接合可靠性,并且即使在进行了超声波接合的情况下也能够抑制陶瓷部件与铜部件的剥离的铜-陶瓷接合体、绝缘电路基板、铜-陶瓷接合体的制造方法及绝缘电路基板的制造方法。
为解决上述课题,本发明的一方式的铜-陶瓷接合体(以下称为“本发明的铜-陶瓷接合体”)为通过接合由铜或铜合金构成的铜部件和由含氧陶瓷构成的陶瓷部件而成的铜-陶瓷接合体,其特征在于,在所述铜部件与所述陶瓷部件之间,在所述陶瓷部件侧形成有氧化镁层,在与所述氧化镁层接触的铜层的内部分散有活性金属氧化物相,所述活性金属氧化物相由选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属的氧化物形成。
根据本发明的铜-陶瓷接合体,在所述铜部件与所述陶瓷部件之间形成有氧化镁层,因此能够通过氧化镁层来减轻铜部件与陶瓷部件的热膨胀系数之差引起的热应力,从而能够提高冷热循环负载后的接合可靠性。
并且,在与所述氧化镁层接触的铜层的内部分散有活性金属氧化物相,所述活性金属氧化物相由选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属的氧化物形成,因此接合界面被强化,即使为了将端子材等进行超声波接合而对接合体负载超声波时,也能够抑制陶瓷部件与铜部件的剥离或陶瓷基板的裂纹的产生。
在此,本发明的铜-陶瓷接合体中,优选所述氧化镁层的厚度在50nm以上且1000nm以下的范围内。
此时,形成于所述铜部件与所述陶瓷部件之间的氧化镁层的厚度在50nm以上且1000nm以下的范围内,因此能够通过氧化镁层来充分减轻铜部件与陶瓷部件的热膨胀系数之差引起的热应力,从而能够进一步提高冷热循环负载后的接合可靠性。
并且,本发明的铜-陶瓷接合体中,优选在所述氧化镁层的内部,分散有Cu粒子及Cu与活性金属的化合物粒子中的任一种或两种。
此时,通过上述Cu粒子及化合物粒子,提高形成于接合界面的氧化镁层的强度,从而能够进一步抑制负载超声波时的陶瓷部件与铜部件的剥离或陶瓷基板的裂纹的产生。
并且,本发明的铜-陶瓷接合体中,优选分散在所述氧化镁层的内部的所述Cu粒子及所述化合物粒子的圆当量直径在10nm以上且100nm以下的范围内。
此时,上述Cu粒子及化合物粒子的圆当量直径在10nm以上且100nm以下的范围内,因此可靠地提高形成于接合界面的氧化镁层的强度,从而能够进一步抑制负载超声波时的陶瓷部件与铜部件的剥离或陶瓷基板的裂纹的产生。
并且,本发明的铜-陶瓷接合体中,优选所述活性金属为Ti。
此时,在与所述氧化镁层接触的铜层的内部,分散有钛氧化物相,从而能够可靠地强化接合界面,即使负载超声波时,也能够进一步抑制陶瓷部件与铜部件的剥离或陶瓷基板的裂纹的产生。
本发明的另一方式的绝缘电路基板(以下称为“本发明的绝缘电路基板”)为通过在由含氧陶瓷构成的陶瓷基板的表面接合由铜或铜合金构成的铜板而成的绝缘电路基板,其特征在于,在所述陶瓷基板与所述铜板之间,在所述陶瓷部件侧形成有氧化镁层,在与所述氧化镁层接触的铜层的内部分散有活性金属氧化物相,所述活性金属氧化物相由选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属的氧化物形成。
根据本发明的绝缘电路基板,在所述铜板与所述陶瓷部件之间形成有氧化镁层,因此能够通过氧化镁层来减轻铜板与陶瓷部件的热膨胀系数之差引起的热应力,从而能够提高冷热循环负载后的接合可靠性。
并且,在与所述氧化镁层接触的铜层的内部分散有活性金属氧化物相,所述活性金属氧化物相由选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属的氧化物形成,因此接合界面被强化,即使负载超声波时,也能够抑制陶瓷基板与铜板的剥离或陶瓷基板的裂纹的产生。
在此,本发明的绝缘电路基板中,优选所述氧化镁层的厚度在50nm以上且1000nm以下的范围内。
此时,形成于所述铜板与所述陶瓷基板之间的氧化镁层的厚度在50nm以上且1000nm以下的范围内,因此能够通过氧化镁层来充分减轻铜板与陶瓷基板的热膨胀系数之差引起的热应力,从而能够进一步提高冷热循环负载后的接合可靠性。
并且,本发明的绝缘电路基板中,优选在所述氧化镁层的内部,分散有Cu粒子及Cu与活性金属的化合物粒子中的任一种或两种。
此时,通过上述Cu粒子及化合物粒子,提高形成于接合界面的氧化镁层的强度,从而能够进一步抑制负载超声波时的陶瓷基板与铜板的剥离或陶瓷基板的裂纹的产生。
并且,本发明的绝缘电路基板中,优选分散在所述氧化镁层的内部的所述Cu粒子及所述化合物粒子的圆当量直径在10nm以上且100nm以下的范围内。
此时,上述Cu粒子及化合物粒子的圆当量直径在10nm以上且100nm以下的范围内,因此可靠地提高形成于接合界面的氧化镁层的强度,从而能够进一步抑制负载超声波时的陶瓷基板与铜板的剥离或陶瓷基板的裂纹的产生。
并且,本发明的绝缘电路基板中,优选所述活性金属为Ti。
此时,在与所述氧化镁层接触的铜层的内部,分散有钛氧化物相,从而能够可靠地强化接合界面,即使负载超声波时,也能够进一步抑制陶瓷基板与铜板的剥离或陶瓷基板的裂纹的产生。
本发明的另一方式的铜-陶瓷接合体的制造方法(以下称为“本发明的铜-陶瓷接合体的制造方法”)为制造上述铜-陶瓷接合体的制造方法,其特征在于,具备:活性金属及Mg配置工序,在所述铜部件与所述陶瓷部件之间,配置选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属及Mg;层叠工序,将所述铜部件与所述陶瓷部件经由活性金属及Mg进行层叠;以及接合工序,在将经由活性金属及Mg层叠的所述铜部件与所述陶瓷部件沿层叠方向加压的状态下,在真空气氛下进行加热处理而接合,所述活性金属及Mg配置工序中,将活性金属量设在0.4μmol/cm2以上且47.0μmol/cm2以下的范围内,将Mg量设在14μmol/cm2以上且180μmol/cm2以下的范围内,所述接合工序中,将480℃以上且低于650℃的温度范围内的升温速度设为5℃/min以上,并且将保持温度设在650℃以上且850℃以下的范围内,将保持温度下的保持时间设在10min以上且180min以下的范围内。
根据该结构的铜-陶瓷接合体的制造方法,在所述活性金属及Mg配置工序中,活性金属量在0.4μmol/cm2以上且47.0μmol/cm2以下的范围内,Mg量在14μmol/cm2以上且180μmol/cm2以下的范围内,因此能够充分获得界面反应所需的液相。因此,能够可靠地接合铜部件与陶瓷部件。
并且,所述接合工序中,480℃以上且低于650℃的温度范围内的升温速度为5℃/min以上,并且保持温度在650℃以上且850℃以下的范围内,保持温度下的保持时间在10min以上且180min以下的范围内,因此能够将界面反应所需的液相保持一定时间以上,可促进均匀的界面反应,在接合界面形成氧化镁层,并且,在与所述氧化镁层接触的铜层的内部分散有活性金属氧化物相,所述活性金属氧化物相由选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属的氧化物形成。
本发明的绝缘电路基板的制造方法为制造上述绝缘电路基板的制造方法,其特征在于,具备:活性金属及Mg配置工序,在所述铜板与所述陶瓷基板之间,配置选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属及Mg;层叠工序,将所述铜板与所述陶瓷基板经由活性金属及Mg进行层叠;以及接合工序,在将经由活性金属及Mg层叠的所述铜板与所述陶瓷基板沿层叠方向加压的状态下,在真空气氛下进行加热处理而接合,所述活性金属及Mg配置工序中,将活性金属量设在0.4μmol/cm2以上且47.0μmol/cm2以下的范围内,将Mg量设在14μmol/cm2以上且180μmol/cm2以下的范围内,所述接合工序中,将480℃以上且低于650℃的温度范围内的升温速度设为5℃/min以上,并且将保持温度设在650℃以上且850℃以下的范围内,将保持温度下的保持时间设在10min以上且180min以下的范围内。
根据该结构的绝缘电路基板的制造方法,在所述活性金属及Mg配置工序中,活性金属量在0.4μmol/cm2以上且47.0μmol/cm2以下的范围内,Mg量在14μmol/cm2以上且180μmol/cm2以下的范围内,因此能够充分获得界面反应所需的液相。因此,能够可靠地接合铜板与陶瓷基板。
并且,所述接合工序中,480℃以上且低于650℃的温度范围内的升温速度为5℃/min以上,并且保持温度在650℃以上且850℃以下的范围内,保持温度下的保持时间在10min以上且180min以下的范围内,因此能够将界面反应所需的液相保持一定时间以上,可促进均匀的界面反应,在接合界面形成氧化镁层,并且,在与所述氧化镁层接触的铜层的内部分散有活性金属氧化物相,所述活性金属氧化物相由选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属的氧化物形成。
根据本发明,能够提供即使负载严苛的冷热循环的情况下也能够确保铜部件与陶瓷部件的接合可靠性,并且即使在进行了超声波接合的情况下也能够抑制陶瓷部件与铜部件的剥离或陶瓷基板的裂纹的产生的铜-陶瓷接合体、绝缘电路基板、铜-陶瓷接合体的制造方法及绝缘电路基板的制造方法。
附图说明
图1是使用本发明的实施方式所涉及的绝缘电路基板的功率模块的概略说明图。
图2是本发明的实施方式所涉及的绝缘电路基板的电路层(金属层)与陶瓷基板的接合界面的放大说明图。
图3是本发明的实施方式所涉及的绝缘电路基板的制造方法的流程图。
图4是本发明的实施方式所涉及的绝缘电路基板的制造方法的概略说明图。
具体实施方式
以下,参考附图对本发明的实施方式进行说明。
本实施方式所涉及的接合体为通过接合作为由陶瓷构成的陶瓷部件的陶瓷基板11和作为由铜或铜合金构成的铜部件的铜板22(电路层12)及铜板23(金属层13)而成的绝缘电路基板10。图1示出具备本实施方式的绝缘电路基板10的功率模块1。
该功率模块1具备:配设有电路层12及金属层13的绝缘电路基板10;在电路层12的一面(在图1中为上面)经由接合层2接合的半导体元件3;和配置于金属层13的另一侧(在图1中为下侧)的散热器30。
半导体元件3由Si等半导体材料构成。该半导体元件3与电路层12经由接合层2接合。
接合层2例如由Sn-Ag系、Sn-In系或Sn-Ag-Cu系的焊料构成。
散热器30用于将来自所述绝缘电路基板10的热进行散热。该散热器30由Cu或Cu合金构成,在本实施方式中,由磷脱氧铜构成。在该散热器30中,设有供冷却用流体流动的流路31。
另外,在本实施方式中,散热器30与金属层13通过由焊料构成的焊料层32进行接合。该焊料层32例如由Sn-Ag系、Sn-In系或Sn-Ag-Cu系的焊料构成。
并且,如图1所示,本实施方式的绝缘电路基板10具备陶瓷基板11、配设于该陶瓷基板11的一面(在图1中为上面)的电路层12、及配设于陶瓷基板11的另一面(在图1中为下面)的金属层13。
陶瓷基板11由绝缘性及散热性优异的含氧陶瓷构成,在本实施方式中,由氧化铝(Al2O3)构成。该陶瓷基板11的厚度例如设定在0.2mm以上且1.5mm以下的范围内,本实施方式中,设定为0.635mm。
如图4所示,电路层12通过在陶瓷基板11的一面(在图4中为上面)接合由铜或铜合金构成的铜板22而形成。
本实施方式中,电路层12通过使由无氧铜的轧制板构成的铜板22接合于陶瓷基板11而形成。
另外,成为电路层12的铜板22的厚度设定在0.1mm以上且2.0mm以下的范围内,本实施方式中,设定为0.6mm。
如图4所示,金属层13通过在陶瓷基板11的另一面(在图4中为下面)接合由铜或铜合金构成的铜板23而形成。
本实施方式中,金属层13通过使由无氧铜的轧制板构成的铜板23接合于陶瓷基板11而形成。
另外,成为金属层13的铜板23的厚度设定在0.1mm以上且2.0mm以下的范围内,本实施方式中,设定为0.6mm。
并且,在陶瓷基板11与电路层12(金属层13)的接合界面,如图2所示,在陶瓷基板11侧形成有氧化镁层41,以层叠在该氧化镁层41上的方式形成有铜层45。
氧化镁层41是直接设置在陶瓷基板11上的层。氧化镁层41的主成分是氧化镁。
铜层45是存在于氧化镁层41与电路层12(金属层13)之间的层。铜层45的主成分是铜或铜合金,在该铜层45的内部分散有活性金属氧化物相46,该活性金属氧化物相46由选自Ti,Zr,Nb和Hf中的一种或两种以上的活性金属的氧化物形成。另外,在本实施方式中,优选使用Ti作为活性金属。
在此,本实施方式中,优选所述氧化镁层41的厚度在50nm以上且1000nm以下的范围内。
另外,氧化镁层41的厚度的下限优选为80nm以上,更优选为150nm以上。另外,氧化镁层41的厚度的上限优选为700nm以下,更优选为500nm以下。
铜层45的厚度的下限优选为0.1μm以上,更优选为5μm以上。另一方面,铜层45的厚度的上限优选为80μm以下,更优选为60μm以下。
并且,本实施方式中,优选在所述氧化镁层41的内部,分散有由Cu粒子及Cu与活性金属的化合物粒子中的任一种或两种构成的含Cu粒子42。
Cu粒子是由存在于氧化镁层41内部的Cu构成的相。Cu与活性金属的化合物粒子是由存在于氧化镁层41内部的Cu和活性金属(选自Ti、Zr、Nb和Hf中的一种或两种以上)构成的相。
作为Cu与活性金属的化合物粒子,可例示出Cu4Ti、Cu3Ti2、Cu4Ti3、CuTi、CuTi2、CuTi3等、Cu5Zr、Cu51Zr14、Cu8Zr3、Cu10Zr7、CuZr、Cu5Zr8、CuZr2等、Cu51Hf14、Cu8Hf3、Cu10Hf7、CuHf2等。另外,在本实施方式中,分散在氧化镁层41内部的含Cu粒子42的圆当量直径优选在10nm以上且100nm以下的范围内。
另外,分散在氧化镁层41内部的含Cu粒子42的圆当量直径的下限更优选为15nm以上,进一步优选为20nm以上。另一方面,上述含Cu粒子42的圆当量直径的上限更优选为70nm以下,进一步优选为50nm以下。
以下,参考图3及图4对本实施方式所涉及的绝缘电路基板10的制造方法进行说明。
(活性金属及Mg配置工序S01)
首先,准备由氧化铝(Al2O3)构成的陶瓷基板11,如图4所示,在成为电路层12的铜板22与陶瓷基板11之间、以及成为金属层13的铜板23与陶瓷基板11之间,分别配置选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属及Mg。
本实施方式中,在成为电路层12的铜板22与陶瓷基板11之间、以及成为金属层13的铜板23与陶瓷基板11之间,配设有Mg箔25和活性金属箔26。
在此,在活性金属及Mg配置工序S01中,将所配置的活性金属量设定在0.4μmol/cm2以上且47.0μmol/cm2以下的范围内,将Mg量设定在14μmol/cm2以上且180μmol/cm2以下的范围内。
另外,所配置的活性金属量的下限优选为0.9μmol/cm2以上,进一步优选为2.8μmol/cm2以上。另一方面,所配置的活性金属量的上限优选为20μmol/cm2以下,进一步优选为10μmol/cm2以下。
并且,所配置的Mg量的下限优选为21μmol/cm2以上,进一步优选为28μmol/cm2以上。另一方面,所配置的Mg量的上限优选为107μmol/cm2以下,进一步优选为72μmol/cm2以下。
(层叠工序S02)
接着,将铜板22与陶瓷基板11经由活性金属箔26及Mg箔25层叠,并且将陶瓷基板11与铜板23经由活性金属箔26及Mg箔25层叠。
(接合工序S03)
接着,将所层叠的铜板22、活性金属箔26、Mg箔25、陶瓷基板11、Mg箔25、活性金属箔26、铜板23沿层叠方向进行加压,并且装入真空炉内进行加热,将铜板22、陶瓷基板11及铜板23接合。
在此,关于接合工程S03中的热处理条件,480℃以上且低于650℃的温度范围内的升温速度为5℃/min以上,并且保持温度在650℃以上且850℃以下的范围内,保持温度下的保持时间在10min以上且180min以下的范围内。通过如此规定热处理条件,能够在接合界面将Cu-Mg系的液相维持在高温状态,在接合界面形成氧化镁层41及铜层45,在该铜层45的内部分散有由选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属的氧化物形成的活性金属氧化物相46。
另外,在480℃以上且低于650℃的温度范围内的升温速度的下限优选为7℃/min以上,进一步优选为9℃/min以上。另一方面,在480℃以上且低于650℃的温度范围内的升温速度的上限并无特别限制,优选为15℃/min以下,进一步优选为12℃/min以下。
并且,保持温度的下限优选为700℃以上,进一步优选为750℃以上。另一方面,保持温度的上限优选为830℃以下,进一步优选为800℃以下。
并且,保持时间的下限优选为30min以上,进一步优选为45min以上。另一方面,保持时间的上限优选为150min以下,进一步优选为120min以下。
另外,在接合工序S03中的加压荷载优选在0.049MPa以上且3.4MPa以下的范围内。
并且,在接合工序S03中的真空度优选在1×10-6Pa以上且5×10-2Pa以下的范围内。
如上所述,通过活性金属及Mg配置工序S01、层叠工序S02及接合工序S03,制造本实施方式的绝缘电路基板10。
(散热器接合工序S04)
接着,在绝缘电路基板10的金属层13的另一面侧接合散热器30。将绝缘电路基板10与散热器30经由焊料进行层叠,并装入加热炉,经由焊料层32将绝缘电路基板10与散热器30进行焊料接合。
(半导体元件接合工序S05)
接着,将半导体元件3通过焊接而接合在绝缘电路基板10的电路层12的一面。
通过上述工序,制出图1所示的功率模块1。
根据以上构成的本实施方式的绝缘电路基板10(铜-陶瓷接合体),在电路层12及金属层13与陶瓷基板11之间形成有氧化镁层41,因此能够通过氧化镁层41来减轻电路层12及金属层13与陶瓷基板11的热膨胀系数之差引起的热应力,从而能够提高冷热循环负载后的接合可靠性。
并且,在与氧化镁层41接触的铜层45的内部分散有活性金属氧化物相46,该活性金属氧化物相46由选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属的氧化物形成,因此接合界面被强化。因此,即使为了将端子材等超声波接合至铜部件(电路层12)而对绝缘电路基板10(铜-陶瓷接合体)负载超声波时,也能够抑制电路层12及金属层13与陶瓷基板11的剥离或陶瓷基板11的裂纹的产生。
并且,本实施方式中,在氧化镁层41的厚度在50nm以上且1000nm以下的范围内时,能够通过氧化镁层41来充分减轻电路层12及金属层13与陶瓷基板11的热膨胀系数之差引起的热应力,从而能够进一步提高冷热循环负载后的接合可靠性。
并且,在本实施方式中,在氧化镁层41的内部,分散有由Cu粒子及Cu与活性金属的化合物粒中的任一种或两种构成的含Cu粒子42时,通过含Cu粒子42,提高形成于接合界面的氧化镁层41的强度,从而能够进一步抑制负载超声波时的电路层12及金属层13与陶瓷基板11的剥离或陶瓷基板11的裂纹的产生。
并且,在本实施方式中,分散在氧化镁层41的内部的含Cu粒子42的圆当量直径在10nm以上且100nm以下的范围内时,可靠地提高形成于接合界面的氧化镁层41的强度,从而能够进一步抑制负载超声波时的电路层12及金属层13与陶瓷基板11的剥离或陶瓷基板11的裂纹的产生。
并且,在本实施方式中,活性金属为Ti时,在与氧化镁层41接触的铜层45的内部,分散有作为活性金属氧化物相46的钛氧化物相,从而能够可靠地强化接合界面,即使负载超声波时,也能进一步抑制电路层12及金属层13与陶瓷基板11的剥离或陶瓷基板11的裂纹的产生。
根据本实施方式的绝缘电路基板的制造方法,在活性金属及Mg配置工序01中,活性金属量在0.4μmol/cm2以上且47.0μmol/cm2以下的范围内,Mg量在14μmol/cm2以上且180μmol/cm2以下的范围内,因此能够充分获得界面反应所需的液相。因此,能够可靠地接合电路层12及金属层13与陶瓷基板11。
并且,接合工序S03中,480℃以上且低于650℃的温度范围内的升温速度为5℃/min以上,并且保持温度在650℃以上且850℃以下的范围内,保持温度下的保持时间在10min以上且180min以下的范围内,因此能够将界面反应所需的液相保持一定时间以上,可促进均匀的界面反应,在接合界面形成氧化镁层41,并且,在与所述氧化镁层41接触的铜层45的内部分散有活性金属氧化物相46,该活性金属氧化物相46由选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属的氧化物形成。
以上,对本发明的实施方式进行了说明,但本发明并不限定于此,在不脱离该发明的技术要件的范围内,可进行适当变更。
例如,本实施方式中,对在绝缘电路基板搭载半导体元件构成功率模块的情况进行了说明,但并不限定于此。例如,可以在绝缘电路基板的电路层搭载LED元件构成LED模块,也可以在绝缘电路基板的电路层搭载热电元件构成热电模块。
并且,本实施方式的绝缘电路基板中,对电路层与金属层均通过由铜或铜合金构成的铜板构成的情况进行了说明,但并不限定于此。
例如,只要电路层与陶瓷基板构成本发明的铜-陶瓷接合体,则金属层的材质或接合方法并无限定,可以没有金属层,金属层也可以由铝或铝合金构成,也可以由铜与铝的层叠体构成。
另一方面,只要金属层与陶瓷基板构成本发明的铜-陶瓷接合体,则电路层的材质或接合方法并无限定,电路层可由铝或铝合金构成,也可以由铜与铝的层叠体构成。
并且,本实施方式中,已经说明了在铜板与陶瓷基板之间层叠活性金属箔与Mg箔的结构,但并不限定于此,也可以配设Mg与活性金属的合金箔。并且,也可以在陶瓷基板及铜板之接合面,通过溅镀法或蒸镀法等进行由Mg、活性金属、Mg与活性金属的合金等构成的薄膜的成膜。
也可以代替活性金属箔,涂布需要量的相应的含活性金属的浆料。
同样地,也可以代替Mg箔,涂布需要量的含Mg的浆料。
也可以仅将活性金属箔及Mg箔中的一个用浆料代替。也可以将活性金属箔及Mg箔这两个都用浆料代替。也可以使用包含Mg和活性金属的合金的浆料。
作为这些浆料中包含的填料,也可以使用MgH2、活性金属氢化化合物。
实施例
以下,对为了确认本发明的效果而进行的确认实验的结果进行说明。
首先,准备了由氧化铝(Al2O3)构成的陶瓷基板(40mm×40mm×0.635mm)。
在表1所示的条件下,将由无氧铜制成的铜板(37mm×37mm×厚度0.3mm)接合到该陶瓷基板的两面以获得绝缘电路基板(铜-陶瓷接合体)。另外,接合时的真空炉的真空度为8×10-3Pa。
对于所得的绝缘电路基板(铜-陶瓷接合体),以如下方式评价了接合界面的氧化镁层的厚度、氧化镁层中的含Cu粒子(Cu粒子及Cu与活性金属化的合物粒子中的任一种或两种)的有无及圆当量直径、铜层中的活性金属氧化物相的有无和超声波接合。
(氧化镁层)
使用透射电子显微镜(FEI公司制造的Titan ChemiSTEM)在加速电压200kV、倍率2万倍下观察铜板与陶瓷基板的接合界面的3μm×3μm的范围,将Mg和氧(O)共存的区域作为氧化镁层,并测定该区域的厚度。将评价结果示于表2。
并且,当在Mg和O共存的区域中检测到Cu(Cu相)时,判断为“有”含Cu粒子,并测量其圆当量直径。将评价结果示于表2。
(铜层中的活性金属氧化物相)
使用透射电子显微镜(FEI公司制造的Titan ChemiSTEM)在加速电压200kV、倍率2万倍下观察铜板与陶瓷基板的接合界面的3μm×3μm的范围,当在铜层存在活性金属和氧(O)共存的区域时,判断为“有”活性金属氧化物相。将评价结果示于表2。
铜层是存在于氧化镁层与铜板之间的层。铜层的主成分是铜或铜合金,在铜层的内部分散有由选自Ti,Zr,Nb和Hf中的一种或两种以上的活性金属的氧化物形成的活性金属氧化物相。
(超声波接合的评价)
对得到的绝缘电路基板(铜-陶瓷接合体)负载冷热循环(-50℃×5min←→150℃×5min,200次)。
对于负载冷热循环后的绝缘电路基板,使用超声波金属接合机(ULTRASONICENGINEERING CO.,LTD.制:60C-904),在崩塌量(collapse amount)0.3mm的条件下,进行了铜端子(10mm×5mm×1mm厚)的超声波接合。另外,铜端子分别按10个为单位进行接合。
接合后,使用超声波探伤装置(Hitachi Power Solutions Co.,Ltd.制FineSAT200),检查铜板与陶瓷基板的接合界面。将十个中观察到三个以上的剥离或陶瓷破裂的情况评价为“C”,将十个中观察到一个以上且两个以下的剥离或陶瓷破裂的情况评价为“B”,将十个中未观察到剥离或陶瓷破裂的情况评价为“A”。将评价结果示于表2。
[表1]
*1升温速度:480℃以上且低于650℃的温度范围内的平均升温速度
[表2]
在配置于接合界面的Mg量少的比较例1中,在接合界面未形成氧化镁层,在铜层中,不存在活性金属氧化物相。并且,冷热循环负载后,铜板与陶瓷基板剥离,因此未能对超声波接合性进行评价。
在480℃以上且低于650℃的温度范围内的升温速度为1℃/min的比较例2中,铜层中不存在活性金属氧化物相,氧化镁层内不存在含Cu粒子。并且,冷热循环负载后的超声波接合性为“C”。
相对于此,在接合界面形成氧化镁层,在与氧化镁层接触的铜层的内部,分散有由选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属的氧化物形成的活性金属氧化物相的本发明例1~9中,在冷热循环负载下接合可靠性也优异,之后,即使实施超声波接合,铜板与陶瓷基板的剥离或陶瓷基板的裂纹的产生也较少。
综上,根据本发明例,可确认能够提供即使负载严苛的冷热循环的情况下也能够确保铜部件与陶瓷部件的接合可靠性,并且即使在进行了超声波接合的情况下也能够抑制陶瓷部件与铜部件的剥离或陶瓷基板的裂纹的产生的铜-陶瓷接合体、绝缘电路基板、铜-陶瓷接合体的制造方法及绝缘电路基板的制造方法。
产业上的可利用性
能够提供即使负载严苛的冷热循环的情况下也能够确保铜部件与陶瓷部件的接合可靠性,并且即使在进行了超声波接合的情况下也能够抑制陶瓷部件与铜部件的剥离或陶瓷基板的裂纹的产生的铜-陶瓷接合体、绝缘电路基板、铜-陶瓷接合体的制造方法及绝缘电路基板的制造方法。
符号说明
10 绝缘电路基板(铜-陶瓷接合体)
11 陶瓷基板(陶瓷部件)
12 电路层(铜部件)
13 金属层(铜部件)
41 氧化镁层
42 含Cu粒子(Cu粒子和/或Cu与活性金属的化合物粒子)
45 铜层
46 活性金属氧化物相
Claims (12)
1.一种铜-陶瓷接合体,通过接合由铜或铜合金构成的铜部件和由含氧陶瓷构成的陶瓷部件而成,其特征在于,
在所述铜部件与所述陶瓷部件之间,在所述陶瓷部件侧形成有氧化镁层,
在与所述氧化镁层接触的铜层的内部分散有活性金属氧化物相,所述活性金属氧化物相由选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属的氧化物形成。
2.根据权利要求1所述的铜-陶瓷接合体,其特征在于,
所述氧化镁层的厚度在50nm以上且1000nm以下的范围内。
3.根据权利要求1或2所述的铜-陶瓷接合体,其特征在于,
在所述氧化镁层的内部,分散有Cu粒子及Cu与活性金属的化合物粒子中的任一种或两种。
4.根据权利要求3所述的铜-陶瓷接合体,其特征在于,
分散在所述氧化镁层的内部的所述Cu粒子及所述化合物粒子的圆当量直径在10nm以上且100nm以下的范围内。
5.根据权利要求1~4中任一项所述的铜-陶瓷接合体,其特征在于,
所述活性金属为Ti。
6.一种绝缘电路基板,通过在由含氧陶瓷构成的陶瓷基板的表面接合由铜或铜合金构成的铜板而成,其特征在于,
在所述陶瓷基板与所述铜板之间,在所述陶瓷部件侧形成有氧化镁层,
在与所述氧化镁层接触的铜层的内部分散有活性金属氧化物相,所述活性金属氧化物相由选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属的氧化物形成。
7.根据权利要求6所述的绝缘电路基板,其特征在于,
所述氧化镁层的厚度在50nm以上且1000nm以下的范围内。
8.根据权利要求6或7所述的绝缘电路基板,其特征在于,
在所述氧化镁层的内部,分散有Cu粒子及Cu与活性金属的化合物粒子中的任一种或两种。
9.根据权利要求8所述的绝缘电路基板,其特征在于,
分散在所述氧化镁层的内部的所述Cu粒子及所述化合物粒子的圆当量直径在10nm以上且100nm以下的范围内。
10.根据权利要求6~9中任一项所述的绝缘电路基板,其特征在于,
所述活性金属为Ti。
11.一种铜-陶瓷接合体的制造方法,其特征在于,制造权利要求1至5中任一项所述的铜-陶瓷接合体,所述铜-陶瓷接合体的制造方法具备:
活性金属及Mg配置工序,在所述铜部件与所述陶瓷部件之间,配置选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属及Mg;
层叠工序,将所述铜部件与所述陶瓷部件经由活性金属及Mg进行层叠;以及
接合工序,在将经由活性金属及Mg层叠的所述铜部件与所述陶瓷部件沿层叠方向加压的状态下,在真空气氛下进行加热处理而接合,
所述活性金属及Mg配置工序中,将活性金属量设在0.4μmol/cm2以上且47.0μmol/cm2以下的范围内,将Mg量设在14μmol/cm2以上且180μmol/cm2以下的范围内,
所述接合工序中,将480℃以上且低于650℃的温度范围内的升温速度设为5℃/min以上,并且将保持温度设在650℃以上且850℃以下的范围内,将保持温度下的保持时间设在10min以上且180min以下的范围内。
12.一种绝缘电路基板的制造方法,其特征在于,该制造方法为权利要求6至10中任一项所述的绝缘电路基板的制造方法,具备:
活性金属及Mg配置工序,在所述铜板与所述陶瓷基板之间,配置选自Ti、Zr、Nb和Hf中的一种或两种以上的活性金属及Mg;
层叠工序,将所述铜板与所述陶瓷基板经由活性金属及Mg进行层叠;以及
接合工序,在将经由活性金属及Mg层叠的所述铜板与所述陶瓷基板沿层叠方向加压的状态下,在真空气氛下进行加热处理而接合,
所述活性金属及Mg配置工序中,将活性金属量设在0.4μmol/cm2以上且47.0μmol/cm2以下的范围内,将Mg量设在14μmol/cm2以上且180μmol/cm2以下的范围内,
所述接合工序中,将480℃以上且低于650℃的温度范围内的升温速度设为5℃/min以上,并且将保持温度设在650℃以上且850℃以下的范围内,将保持温度下的保持时间设在10min以上且180min以下的范围内。
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