CN103685998B - 固态成像装置 - Google Patents

固态成像装置 Download PDF

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Publication number
CN103685998B
CN103685998B CN201310396144.9A CN201310396144A CN103685998B CN 103685998 B CN103685998 B CN 103685998B CN 201310396144 A CN201310396144 A CN 201310396144A CN 103685998 B CN103685998 B CN 103685998B
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China
Prior art keywords
photoelectric conversion
conversion unit
transmission
floating diffusion
transistor
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Chinese (zh)
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CN103685998A (zh
Inventor
小林昌弘
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201310396144.9A 2012-09-04 2013-09-04 固态成像装置 Active CN103685998B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-194182 2012-09-04
JP2012194182A JP2014049727A (ja) 2012-09-04 2012-09-04 固体撮像装置

Publications (2)

Publication Number Publication Date
CN103685998A CN103685998A (zh) 2014-03-26
CN103685998B true CN103685998B (zh) 2017-05-10

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CN201310396144.9A Active CN103685998B (zh) 2012-09-04 2013-09-04 固态成像装置

Country Status (3)

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US (1) US20140061436A1 (enExample)
JP (1) JP2014049727A (enExample)
CN (1) CN103685998B (enExample)

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JP5967944B2 (ja) 2012-01-18 2016-08-10 キヤノン株式会社 固体撮像装置およびカメラ
JP6261361B2 (ja) 2014-02-04 2018-01-17 キヤノン株式会社 固体撮像装置およびカメラ
JP6274567B2 (ja) 2014-03-14 2018-02-07 キヤノン株式会社 固体撮像装置及び撮像システム
JP6595750B2 (ja) 2014-03-14 2019-10-23 キヤノン株式会社 固体撮像装置及び撮像システム
JP6075646B2 (ja) 2014-03-17 2017-02-08 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
JP6541347B2 (ja) 2014-03-27 2019-07-10 キヤノン株式会社 固体撮像装置および撮像システム
JP6587497B2 (ja) * 2014-10-31 2019-10-09 株式会社半導体エネルギー研究所 半導体装置
CN107005664A (zh) * 2014-11-20 2017-08-01 株式会社岛津制作所 光检测器
JP6417197B2 (ja) 2014-11-27 2018-10-31 キヤノン株式会社 固体撮像装置
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JP6570384B2 (ja) 2015-09-11 2019-09-04 キヤノン株式会社 撮像装置及び撮像システム
JP6541523B2 (ja) 2015-09-11 2019-07-10 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の制御方法
US10205894B2 (en) 2015-09-11 2019-02-12 Canon Kabushiki Kaisha Imaging device and imaging system
JP6785429B2 (ja) * 2015-12-03 2020-11-18 パナソニックＩｐマネジメント株式会社 撮像装置
US10652491B2 (en) * 2016-01-14 2020-05-12 Sony Corporation Solid-state imaging element, driving method, and electronic device
JP6688165B2 (ja) 2016-06-10 2020-04-28 キヤノン株式会社 撮像装置及び撮像システム
JP6776011B2 (ja) 2016-06-10 2020-10-28 キヤノン株式会社 撮像装置及び撮像システム
JP6727938B2 (ja) 2016-06-10 2020-07-22 キヤノン株式会社 撮像装置、撮像装置の制御方法、及び撮像システム
JP7013119B2 (ja) 2016-07-21 2022-01-31 キヤノン株式会社 固体撮像素子、固体撮像素子の製造方法、及び撮像システム
JP2018092976A (ja) 2016-11-30 2018-06-14 キヤノン株式会社 撮像装置
JP6957157B2 (ja) 2017-01-26 2021-11-02 キヤノン株式会社 固体撮像装置、撮像システム、および固体撮像装置の製造方法
JP6701108B2 (ja) 2017-03-21 2020-05-27 キヤノン株式会社 固体撮像装置及び撮像システム
JP6929114B2 (ja) 2017-04-24 2021-09-01 キヤノン株式会社 光電変換装置及び撮像システム
US10818715B2 (en) * 2017-06-26 2020-10-27 Canon Kabushiki Kaisha Solid state imaging device and manufacturing method thereof
JP6987562B2 (ja) 2017-07-28 2022-01-05 キヤノン株式会社 固体撮像素子
JP7091080B2 (ja) 2018-02-05 2022-06-27 キヤノン株式会社 装置、システム、および移動体
CN110391256B (zh) * 2018-04-16 2021-07-16 宁波飞芯电子科技有限公司 Tof传感器低漏电型高效二级转移存储节点及实现方法
JP7161317B2 (ja) 2018-06-14 2022-10-26 キヤノン株式会社 撮像装置、撮像システム及び移動体
JP7237622B2 (ja) 2019-02-05 2023-03-13 キヤノン株式会社 光電変換装置
JP7292990B2 (ja) * 2019-06-17 2023-06-19 キヤノン株式会社 撮像装置、コンピュータプログラム及び記憶媒体
JP7753044B2 (ja) 2021-10-20 2025-10-14 キヤノン株式会社 光電変換装置

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JP5132102B2 (ja) * 2006-08-01 2013-01-30 キヤノン株式会社 光電変換装置および光電変換装置を用いた撮像システム
JP4420039B2 (ja) * 2007-02-16 2010-02-24 ソニー株式会社 固体撮像装置
JP4110192B1 (ja) * 2007-02-23 2008-07-02 キヤノン株式会社 光電変換装置及び光電変換装置を用いた撮像システム
KR101375830B1 (ko) * 2009-11-16 2014-03-17 캐논 가부시끼가이샤 촬상장치 및 그 제어방법
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FR2959013B1 (fr) * 2010-04-16 2012-05-11 Commissariat Energie Atomique Dispositif de detection de rayonnement electromagnetique a sensibilite reduite au bruit spacial
JP5542091B2 (ja) * 2010-05-18 2014-07-09 富士フイルム株式会社 固体撮像素子及び撮像装置
WO2012042963A1 (ja) * 2010-09-29 2012-04-05 富士フイルム株式会社 固体撮像素子及び撮像装置
JP5888914B2 (ja) * 2011-09-22 2016-03-22 キヤノン株式会社 撮像装置およびその制御方法
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Publication number Publication date
JP2014049727A (ja) 2014-03-17
CN103685998A (zh) 2014-03-26
US20140061436A1 (en) 2014-03-06

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