CN103649838B - 微细图案形成用组合物以及使用其的微细化图案形成方法 - Google Patents

微细图案形成用组合物以及使用其的微细化图案形成方法 Download PDF

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Publication number
CN103649838B
CN103649838B CN201280034718.1A CN201280034718A CN103649838B CN 103649838 B CN103649838 B CN 103649838B CN 201280034718 A CN201280034718 A CN 201280034718A CN 103649838 B CN103649838 B CN 103649838B
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China
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group
forming
acid
composition
fine pattern
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Expired - Fee Related
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CN201280034718.1A
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English (en)
Chinese (zh)
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CN103649838A (zh
Inventor
冈村聪也
G·帕夫洛夫斯基
石井雅弘
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Merck Patent GmbH
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Merck Patent GmbH
Merck Performance Materials IP Japan GK
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
    • C08F226/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a single or double bond to nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
    • C08F226/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a single or double bond to nitrogen
    • C08F226/04—Diallylamine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/28—Condensation with aldehydes or ketones
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/30—Introducing nitrogen atoms or nitrogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/34—Introducing sulfur atoms or sulfur-containing groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D139/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2800/00—Copolymer characterised by the proportions of the comonomers expressed
    • C08F2800/10—Copolymer characterised by the proportions of the comonomers expressed as molar percentages
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2810/00—Chemical modification of a polymer
    • C08F2810/30—Chemical modification of a polymer leading to the formation or introduction of aliphatic or alicyclic unsaturated groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2810/00—Chemical modification of a polymer
    • C08F2810/50—Chemical modification of a polymer wherein the polymer is a copolymer and the modification is taking place only on one or more of the monomers present in minority
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
CN201280034718.1A 2011-07-14 2012-07-13 微细图案形成用组合物以及使用其的微细化图案形成方法 Expired - Fee Related CN103649838B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011-155822 2011-07-14
JP2011155822A JP5705669B2 (ja) 2011-07-14 2011-07-14 微細パターン形成用組成物およびそれを用いた微細化されたパターン形成方法
PCT/JP2012/067926 WO2013008912A1 (ja) 2011-07-14 2012-07-13 微細パターン形成用組成物およびそれを用いた微細化されたパターン形成方法

Publications (2)

Publication Number Publication Date
CN103649838A CN103649838A (zh) 2014-03-19
CN103649838B true CN103649838B (zh) 2016-08-24

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CN201280034718.1A Expired - Fee Related CN103649838B (zh) 2011-07-14 2012-07-13 微细图案形成用组合物以及使用其的微细化图案形成方法

Country Status (7)

Country Link
US (1) US9298094B2 (enExample)
EP (1) EP2733534B1 (enExample)
JP (1) JP5705669B2 (enExample)
KR (1) KR101879173B1 (enExample)
CN (1) CN103649838B (enExample)
TW (1) TWI555786B (enExample)
WO (1) WO2013008912A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6239833B2 (ja) * 2013-02-26 2017-11-29 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP6157151B2 (ja) * 2013-03-05 2017-07-05 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP6427450B2 (ja) * 2014-03-31 2018-11-21 積水化学工業株式会社 変性ポリビニルアセタール樹脂
JP6459759B2 (ja) * 2014-05-26 2019-01-30 信越化学工業株式会社 パターン形成方法及びシュリンク剤
JP6722433B2 (ja) * 2015-09-30 2020-07-15 東京応化工業株式会社 レジストパターン形成方法及びパターン厚肉化用ポリマー組成物
JP6503206B2 (ja) 2015-03-19 2019-04-17 東京応化工業株式会社 レジストパターン修復方法
TWI617900B (zh) * 2015-06-03 2018-03-11 羅門哈斯電子材料有限公司 圖案處理方法
TWI627220B (zh) * 2015-06-03 2018-06-21 羅門哈斯電子材料有限公司 用於圖案處理之組合物及方法
TWI615460B (zh) * 2015-06-03 2018-02-21 羅門哈斯電子材料有限公司 用於圖案處理的組合物和方法
JP2017129774A (ja) * 2016-01-21 2017-07-27 凸版印刷株式会社 緑色感光性着色組成物、それを用いたカラーフィルタ及びカラー表示装置
JP6741471B2 (ja) * 2016-05-17 2020-08-19 東京応化工業株式会社 レジストパターン形成方法
JP6745167B2 (ja) * 2016-08-19 2020-08-26 東京応化工業株式会社 レジストパターン形成方法、及びパターン厚肉化用ポリマー組成物
JP6789158B2 (ja) * 2017-03-21 2020-11-25 東京応化工業株式会社 ポリマーの製造方法及びレジストパターン形成方法

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CN1684229A (zh) * 2004-04-08 2005-10-19 三星电子株式会社 用于半导体器件制造的掩膜图案及其形成方法、和制造有精细图案的半导体器件的方法
WO2006046137A1 (en) * 2004-10-26 2006-05-04 Az Electronic Materials Usa Corp. A composition for coating over a phtoresist pattern
CN1823304A (zh) * 2003-07-17 2006-08-23 Az电子材料（日本）株式会社 用于形成精细图形的材料和使用该材料形成精细图形的方法
JP2006307179A (ja) * 2005-03-29 2006-11-09 Jsr Corp 重合体
WO2009008265A1 (ja) * 2007-07-11 2009-01-15 Az Electronic Materials (Japan) K.K. 微細パターン形成用組成物およびそれを用いた微細パターン形成方法
JP2011033679A (ja) * 2009-07-30 2011-02-17 Jsr Corp 微細パターン形成用樹脂組成物および微細パターン形成方法、ならびに重合体

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US5086111A (en) * 1990-05-17 1992-02-04 Air Products And Chemicals, Inc. Amine functional polymers containing acetal groups
DE4413720A1 (de) * 1994-04-20 1995-10-26 Basf Ag Farbstoffübertragungsinhibitoren für Waschmittel
JP5000260B2 (ja) * 2006-10-19 2012-08-15 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液
JP2008102343A (ja) * 2006-10-19 2008-05-01 Az Electronic Materials Kk 現像済みレジスト基板処理液とそれを用いたレジスト基板の処理方法
JP5069494B2 (ja) 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
JP5925454B2 (ja) * 2010-12-16 2016-05-25 花王株式会社 磁気ディスク基板用研磨液組成物

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Publication number Priority date Publication date Assignee Title
CN1823304A (zh) * 2003-07-17 2006-08-23 Az电子材料（日本）株式会社 用于形成精细图形的材料和使用该材料形成精细图形的方法
CN1684229A (zh) * 2004-04-08 2005-10-19 三星电子株式会社 用于半导体器件制造的掩膜图案及其形成方法、和制造有精细图案的半导体器件的方法
WO2006046137A1 (en) * 2004-10-26 2006-05-04 Az Electronic Materials Usa Corp. A composition for coating over a phtoresist pattern
JP2008518260A (ja) * 2004-10-26 2008-05-29 エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション フォトレジストパターンを被覆するための組成物
JP2006307179A (ja) * 2005-03-29 2006-11-09 Jsr Corp 重合体
WO2009008265A1 (ja) * 2007-07-11 2009-01-15 Az Electronic Materials (Japan) K.K. 微細パターン形成用組成物およびそれを用いた微細パターン形成方法
JP2011033679A (ja) * 2009-07-30 2011-02-17 Jsr Corp 微細パターン形成用樹脂組成物および微細パターン形成方法、ならびに重合体

Also Published As

Publication number Publication date
EP2733534A1 (en) 2014-05-21
TWI555786B (zh) 2016-11-01
EP2733534B1 (en) 2016-09-14
CN103649838A (zh) 2014-03-19
WO2013008912A1 (ja) 2013-01-17
JP5705669B2 (ja) 2015-04-22
EP2733534A4 (en) 2015-03-11
TW201313820A (zh) 2013-04-01
KR20140050055A (ko) 2014-04-28
US9298094B2 (en) 2016-03-29
US20140127478A1 (en) 2014-05-08
KR101879173B1 (ko) 2018-07-18
JP2013020211A (ja) 2013-01-31

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