CN103632987B - 三维集成电路（3dic）堆叠的载体翘曲控制 - Google Patents

三维集成电路（3dic）堆叠的载体翘曲控制 Download PDF

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Publication number
CN103632987B
CN103632987B CN201310177995.4A CN201310177995A CN103632987B CN 103632987 B CN103632987 B CN 103632987B CN 201310177995 A CN201310177995 A CN 201310177995A CN 103632987 B CN103632987 B CN 103632987B
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tube core
substrate
carrier
forming encapsulation
encapsulation stacking
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CN103632987A (zh
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林俊成
林士庭
余振华
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

形成封装堆叠(PoP)器件的实施例方法包括：在载体上临时安装衬底；在衬底上堆叠第一管芯，管芯和衬底中至少一个具有与载体失配的热膨胀系数；以及在第一管芯上堆叠第二管芯。衬底可以由有机衬底、陶瓷衬底、硅衬底、玻璃衬底、和层压衬底中的一个形成。

Description

三维集成电路（3DIC）堆叠的载体翘曲控制
相关申请的交叉引用
本申请要求与2012年8月24日提交的美国临时专利申请第61/693,083 号标题为“Carrier Warpage Control for3DIC Stacking”的优先权，其全部内容结合于此作为参考。
技术领域
本发明总体上涉及半导体领域，更具体地，涉及三维集成电路(3DIC) 堆叠的载体翘曲控制。
背景技术
随着较小体积电子产品的发展需求，电子行业的制造者们在不断地寻求能够减小电子产品所采用的集成电路的尺寸的方法。鉴于这个方面，已经发展并使用了三维集成电路封装技术。
一种封装堆叠(PoP)技术已经得到发展。顾名思义，PoP是一种包括将一个封装件堆叠在另一个封装件上的半导体封装发明。PoP器件可以将垂直离散式存储器与逻辑封装件组合在一起。
遗憾的是，用于制造PoP器件的传统工艺可能不足以防止封装件发生翘曲。当将相对薄的管芯或集成电路进行堆叠时，这种情况尤为突出。
发明内容
为解决上述问题，本发明提供了一种形成封装堆叠(PoP)器件的方法，包括：在载体上临时安装衬底；在衬底上堆叠第一管芯，第一管芯和衬底中的至少一个具有与载体失配的热膨胀系数；以及在第一管芯上堆叠第二管芯。
其中，衬底由有机衬底、陶瓷衬底、硅衬底、玻璃衬底、和层压衬底中的一个形成。
其中，衬底由环氧树脂和自然树脂中的一种形成。
该方法进一步包括：使用粘结剂在载体上临时安装衬底。
该方法进一步包括：使第二管芯相对于第一管芯产生水平偏移，以向第二管芯提供垂悬部分。
该方法进一步包括：在堆叠第一管芯和第二管芯之前，使用压力退火盖在衬底上进行压力退火。
该方法进一步包括：仅在第一管芯和衬底之间使底层填料流动。
该方法进一步包括：仅在第一管芯和第二管芯之间使底层填料流动。
该方法进一步包括：在有机衬底、第一管芯、和第二管芯的露出部分的上方形成模塑材料。
该方法进一步包括：在有机衬底、第一管芯、和第二管芯的露出部分上保持不存在模塑材料。
该方法进一步包括：研磨掉模塑材料的一部分。
该方法进一步包括：在第一管芯上堆叠第二管芯之后，去除载体。
此外，还提供了一种形成封装堆叠(PoP)器件的方法，包括：在载体上临时安装衬底；在衬底上堆叠多个管芯，多个管芯和衬底中的至少一个具有与载体失配的热膨胀系数；以及在堆叠多个管芯之后，去除载体。
其中，衬底由有机衬底、陶瓷衬底、硅衬底、玻璃衬底、和层压衬底中的一个形成。
该方法进一步包括：当堆叠管芯时，使管芯中的一个相对于管芯中的另一个产生水平偏移。
该方法进一步包括：在堆叠管芯之后，仅在衬底和管芯中最靠近衬底的第一个之间使底层填料流动。
该方法进一步包括：在堆叠管芯之后，仅在管芯之间使底层填料流动。
该方法进一步包括：在有机衬底的露出部分的上方和管芯的上方形成模塑材料。
此外，还提供了一种形成封装堆叠(PoP)器件的方法，包括：在载体上临时安置衬底；在衬底上堆叠第一管芯，第一管芯和衬底中的至少一个具有与载体失配的热膨胀系数；在第一管芯上堆叠第二管芯，第二管芯相对于第一管芯产生水平偏移，以向第二管芯提供垂悬部分；以及在第一管芯和衬底之间以及在第一管芯和第二管芯之间使底层填料流动。
该方法进一步包括：衬底由有机衬底、陶瓷衬底、硅衬底、玻璃衬底、和层压衬底中的一个形成。
附图说明
为了更全面地理解实施例及其优势，下面将结合附图进行下列说明，其中：
图1A-图1I共同示出了使用载体抑制或防止在堆叠管芯中出现翘曲的形成PoP器件的实施例的方法；
图2示出了使用图1A-图1I的方法形成的实施例的PoP器件的截面图；
图3示出了使用图1A-图1I的方法形成的没有任何底层填料的实施例的PoP器件的截面图；以及
图4示出了使用图1A-图1I的方法形成的在衬底的侧壁上没有任何模塑的实施例的PoP器件的截面图。
除非另有说明，否则不同图中的相应数字和符号常常表示相应的部分。绘制的图只用于清楚地说明实施例的相关方面，因此无需按比例绘制。
具体实施方式
下面，详细讨论本发明各实施例的制造和使用。然而，应该理解，本发明提供了许多可以在各种具体环境中实现的可应用的概念。所讨论的具体实施例仅仅示出了制造和使用本发明的具体方式，而不用于限制本发明的范围。
根据具体环境中的现有实施例来描述本发明，即，封装堆叠(PoP)半导体器件。但是，本发明中的概念也可应用于其他半导体结构或电路中。
现参见图1A-图1I，其共同示出了形成PoP器件10(图2-4)的实施例方法。如图1A所示，在载体14上沉积或形成粘结剂12或其他合适的粘结材料。在一个实施例中，由玻璃、硅、具有低的热膨胀系数的材料、或其他合适的载体材料形成载体14。实际上，载体14通常是具有良好硬度的较高模量材料。
现参见图1B，使用粘结剂12或其他合适的粘结材料将衬底16临时安装在载体14上。在一个实施例中，衬底16是有机衬底、陶瓷衬底、硅衬底、玻璃衬底、或具有或支撑金属互连件18或金属化的层压衬底。在一个实施例中，由环氧树脂(epoxy)、自然树脂(resin)或其他材料形成衬底 16。
现参见图1C，在一个实施例中，如图1B中所示的将衬底16临时安装在载体14上之后，进行压力退火。压力退火通常使衬底16偏向载体14。这就确保衬底16牢固地安装在载体14上，虽然是暂时安装。在一个实施例中，随着加热使用压力退火盖20进行图1C所示的压力退火。在一个实施例中，在图1A-图1I所示的方法中可以稍后进行压力退火。例如，可在晶圆、面板、单一单元或多个单元上进行压力退火。此外，在一个实施例中，压力退火只包括加压，而无需加热。
现参见图1D，去除图1C所示的压力退火盖20之后，使用例如焊料球和相应的接触焊盘将第一管芯22接合到衬底16上。第一管芯22可包括逻辑组件(逻辑集成电路，模拟电路等)、存储组件等。衬底16和/或管芯 22通常具有与载体14失配的材料热膨胀系数。例如，关于抑制或防止堆叠在衬底16上或上方的管芯或其他半导体结构出现任何翘曲，下文会给出详细说明。
在放置第一管芯22之后，底层填料24可在第一管芯22和衬底16之间流动。在一个实施例中，在第一管芯22和衬底16之间省去底层填料24。
现参见图1E，在安装第一管芯22之后，使用例如焊料球和相应的接触焊盘在第一管芯22的上方接合第二管芯26。第二管芯26可包括逻辑组件(逻辑集成电路、模拟电路等)、存储元件等。值得注意的是，在第一管芯22的上方堆叠第二管芯26通常形成PoP器件10。
如图1E所示，放置第二管芯26之后，底层填料24可在第二管芯26 和第一管芯22之间流动。在一个实施例中，省去底层填料24。在一个实施例中，第二管芯26相对于第一管芯22可能产生水平偏移，以使第二管芯26具有垂悬部分，下文会给出更为详细的说明。
现参见图1F，安装第二管芯26之后，在例如衬底16、第一管芯22和第二管芯26的露出部分的上方形成模塑材料28。在一个实施例中，在设置在载体14且靠近衬底16的粘结剂12的上方也形成模塑材料28。在一个实施例中，模塑材料28通常封装第一管芯22和第二管芯26。
现参见图1G，在第一管芯22和第二管芯26的上方形成模塑材料28 之后，进行研磨工艺以去除模塑材料28的上部。如图所示，研磨工艺可以露出第二管芯26的顶面。但是，在一个实施例中，研磨工艺可能保留设置在第二管芯26上方的模塑材料28的一部分或薄层。
现参见图1H，进行研磨工艺之后，翻转组装件，且进行剥离(grinding) 工艺，以从衬底16上去除载体14。此外，进行清洁工艺以从衬底16和模塑材料28上去除粘结剂12。一旦进行了剥离和清洁工艺，就能从衬底16 的金属互连件18露出接触焊盘。
现参见图1I，进行剥离和清洁工艺之后，进行植球工艺以在衬底16的金属互连件18的接触焊盘上形成焊料球矩阵30。此外，进行晶圆切割工艺，以将PoP器件10彼此隔开。如图1I所示，进行晶圆切割工艺之后，模塑材料28的一部分仍覆盖衬底16的侧壁32。但是，在一个实施例中，晶圆切割工艺去掉衬底16的侧壁32上的模塑材料28。
参见图2，其示出了使用实施例方法形成的实施例PoP器件10。如图所示，PoP器件10包括堆叠在衬底16上的第一管芯22和堆叠在第一管芯 22上的第二管芯26。在一个实施例中，第二管芯26相对于第一管芯22产生水平偏移，以提供如上所述的垂悬部分34给第二管芯26。
在一个实施例中，底层填料24设置在衬底16和第一管芯22以及第一管芯22和第二管芯26之间。在一个实施例中，底层填料24只设置在衬底16和第一管芯22之间。在一个实施例中，底层填料材料24只设置在第一管芯22和第二管芯26之间。此外，在衬底16、第一管芯22和第二管芯 26的部分的周围已经形成PoP器件的模塑材料28。在一个实施例中，省去模塑材料28。
仍参见图2，PoP器件10的衬底16支撑用于将焊料球30(例如，球网阵列)电连接到第一管芯22的金属互连件18和/或其他连接结构(例如，凸块下金属化层)。PoP器件10也可包括其他结构、层或、材料，如钝化层、硅通孔(TSV)、铝焊盘、焊料等。
参见图3，在一个实施例中，PoP器件10省去了图2所示的底层填料24，且用模塑材料28代替。换句话说，模塑材料28用作或预形成为图3所示的实施例PoP器件10中的底层填料。
现参见图4，在一个实施例中，留下或去除衬底16的侧壁32上的模塑材料28。例如，当在图1F的所示的模塑工艺过程中沉积模塑材料28，模塑材料28可能不会在侧壁32上形成。换句话说，防止模塑材料28在侧壁32 上形成。又例如，使用图1I所示的晶圆切割工艺可以去除衬底16的侧壁32 上的模塑材料28。换句话说，晶圆切割去除侧壁32上的模塑材料28。
应该知道，实施例方法和PoP器件10提供了许多优点。实际上，在堆叠管芯22和26过程中，甚至是当堆叠相对薄的管芯时，通过使用载体14可抑制或防止发生翘曲。此外，不管有无垂悬部分，可堆叠多个管芯。
形成封装堆叠(PoP)器件的实施例方法包括：在载体上临时安装衬底；在衬底堆叠第一管芯，管芯和衬底中的至少一个具有与载体失配的热膨胀系数；以及在第一管芯上堆叠第二管芯。
形成封装堆叠(PoP)器件的实施例方法包括：在载体上临时安装衬底；在衬底的上方堆叠多个管芯，多个管芯和衬底中的至少一个具有与载体失配的热膨胀系数；以及在堆叠多个管芯之后，去除载体。
形成封装堆叠(PoP)器件的实施例方法包括：在载体上临时安装衬底；在衬底上堆叠第一管芯，第一管芯和衬底中至少一个具有与载体失配的热膨胀系数；在第一管芯上堆叠第二管芯，第二管芯相对于第一管芯产生水平偏移以使第二管芯具有垂悬；以及底层填料在第一管芯和衬底之间以及第一管芯和第二管芯之间流动。
虽然根据示出的实施例介绍本发明，但是，本说明并不构成限制意义。参考本说明，示出实施例的不同修改和组合以及本发明的其他实施例对本领域的技术人员来说是显而易见的。因此，所附权利要求包括任何这样的修改或实施例。

Claims (18)

1.一种形成封装堆叠(PoP)器件的方法，包括：
在载体上临时安装衬底，其中，压力退火使所述衬底偏向所述载体以确保所述衬底牢固地安装在所述载体上；
在所述衬底上堆叠第一管芯，所述第一管芯或者所述第一管芯和所述衬底具有与所述载体失配的热膨胀系数，使第二管芯相对于所述第一管芯产生水平偏移，以向所述第二管芯提供垂悬部分，所述第一管芯包括硅通孔TSV；以及
在所述第一管芯上堆叠所述第二管芯，所述第一管芯的硅通孔TSV与所述第二管芯的铝焊盘电连接，其中，所述第一管芯大于所述第二管芯。
2.根据权利要求1所述的形成封装堆叠器件的方法，其中，所述衬底由有机衬底、陶瓷衬底、硅衬底、玻璃衬底、和层压衬底中的一个形成。
3.根据权利要求1所述的形成封装堆叠器件的方法，其中，所述衬底由环氧树脂和自然树脂中的一种形成。
4.根据权利要求1所述的形成封装堆叠器件的方法，进一步包括：使用粘结剂在所述载体上临时安装所述衬底。
5.根据权利要求1所述的形成封装堆叠器件的方法，进一步包括：在堆叠所述第一管芯和所述第二管芯之前，使用压力退火盖在所述衬底上进行所述压力退火。
6.根据权利要求1所述的形成封装堆叠器件的方法，进一步包括：仅在所述第一管芯和所述衬底之间使底层填料流动。
7.根据权利要求1所述的形成封装堆叠器件的方法，进一步包括：仅在所述第一管芯和所述第二管芯之间使底层填料流动。
8.根据权利要求2所述的形成封装堆叠器件的方法，进一步包括：在所述有机衬底、所述第一管芯、和所述第二管芯的露出部分的上方形成模塑材料。
9.根据权利要求2所述的形成封装堆叠器件的方法，进一步包括：在所述有机衬底、所述第一管芯、和所述第二管芯的露出部分上保持不存在模塑材料。
10.根据权利要求9所述的形成封装堆叠器件的方法，进一步包括：研磨掉所述模塑材料的一部分。
11.根据权利要求1所述的形成封装堆叠器件的方法，进一步包括：在所述第一管芯上堆叠所述第二管芯之后，去除所述载体。
12.一种形成封装堆叠(PoP)器件的方法，包括：
在载体上临时安装衬底，其中，压力退火使所述衬底偏向所述载体以确保所述衬底牢固地安装在所述载体上；
在所述衬底上堆叠多个管芯，所述多个管芯或者所述多个管芯和所述衬底具有与所述载体失配的热膨胀系数，当堆叠所述管芯时，使所述管芯中的一个相对于所述管芯中的另一个产生水平偏移，所述多个管芯中的第一管芯包括硅通孔TSV；以及
在堆叠所述多个管芯之后，去除所述载体；
其中，第一管芯的硅通孔TSV与所述第一管芯上方的第二管芯的铝焊盘电连接，其中，所述第一管芯大于所述第二管芯。
13.根据权利要求12所述的形成封装堆叠器件的方法，其中，所述衬底由有机衬底、陶瓷衬底、硅衬底、玻璃衬底、和层压衬底中的一个形成。
14.根据权利要求12所述的形成封装堆叠器件的方法，进一步包括：在堆叠所述管芯之后，仅在所述衬底和所述管芯中最靠近所述衬底的第一个之间使底层填料流动。
15.根据权利要求12所述的形成封装堆叠器件的方法，进一步包括：在堆叠所述管芯之后，仅在所述管芯之间使底层填料流动。
16.根据权利要求13所述的形成封装堆叠器件的方法，进一步包括：在所述有机衬底的露出部分的上方和所述管芯的上方形成模塑材料。
17.一种形成封装堆叠(PoP)器件的方法，包括：
在载体上临时安置衬底，其中，压力退火使所述衬底偏向所述载体以确保所述衬底牢固地安装在所述载体上；
在所述衬底上堆叠第一管芯，所述第一管芯或者所述第一管芯和所述衬底具有与所述载体失配的热膨胀系数，所述第一管芯包括硅通孔TSV；
在所述第一管芯上堆叠第二管芯，所述第二管芯相对于所述第一管芯产生水平偏移，以向所述第二管芯提供垂悬部分，所述第一管芯的硅通孔TSV与所述第二管芯的铝焊盘电连接；以及
在所述第一管芯和所述衬底之间以及在所述第一管芯和所述第二管芯之间使底层填料流动，其中，所述第一管芯大于所述第二管芯。
18.根据权利要求17所述的形成封装堆叠器件的方法，进一步包括：所述衬底由有机衬底、陶瓷衬底、硅衬底、玻璃衬底、和层压衬底中的一个形成。
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