CN103532009B - 可调谐布拉格光栅及使用该光栅的可调谐激光二极管 - Google Patents

可调谐布拉格光栅及使用该光栅的可调谐激光二极管 Download PDF

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CN103532009B
CN103532009B CN201310268947.6A CN201310268947A CN103532009B CN 103532009 B CN103532009 B CN 103532009B CN 201310268947 A CN201310268947 A CN 201310268947A CN 103532009 B CN103532009 B CN 103532009B
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waveguide
layer
array
openings
ridge
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CN103532009A (zh
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迈克尔·C·拉尔森
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Viavi Solutions Inc
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JDS Uniphase Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12097—Ridge, rib or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12107—Grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12176—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1234—Actively induced grating, e.g. acoustically or electrically induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
CN201310268947.6A 2012-07-05 2013-06-28 可调谐布拉格光栅及使用该光栅的可调谐激光二极管 Active CN103532009B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/542,547 US8861556B2 (en) 2012-07-05 2012-07-05 Tunable Bragg grating and a tunable laser diode using same
US13/542,547 2012-07-05

Publications (2)

Publication Number Publication Date
CN103532009A CN103532009A (zh) 2014-01-22
CN103532009B true CN103532009B (zh) 2018-05-01

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US (1) US8861556B2 (enExample)
EP (1) EP2682794B1 (enExample)
JP (1) JP6093660B2 (enExample)
CN (1) CN103532009B (enExample)

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US9509119B2 (en) 2015-01-13 2016-11-29 Futurewei Technologies, Inc. Tunable laser with a cascaded filter and comb reflector
CN105759350A (zh) * 2015-07-03 2016-07-13 苏州峰通光电有限公司 一种有机无机混合集成热光调制型光栅及其制备方法
EP3400635B1 (en) 2016-01-04 2023-06-07 Infinera Corporation Tunable waveguide devices
CN105527730A (zh) * 2016-01-06 2016-04-27 北京大学 一种光学相位调制器
CN107230930A (zh) * 2016-03-23 2017-10-03 华为技术有限公司 一种可调激光器及制备方法
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WO2018186471A1 (ja) * 2017-04-06 2018-10-11 国立大学法人横浜国立大学 光偏向デバイス
CN108732667B (zh) * 2017-04-17 2021-01-05 华为技术有限公司 一种超结构光栅和可调谐激光器
CN108879309B (zh) * 2017-05-09 2021-02-12 华为技术有限公司 用于可调激光器的反射镜结构和可调激光器
CN108879310B (zh) * 2017-05-10 2020-07-28 华为技术有限公司 用于可调激光器的反射镜结构和可调激光器
WO2019116657A1 (ja) * 2017-12-15 2019-06-20 株式会社堀場製作所 半導体レーザ
CN108173116B (zh) * 2018-02-07 2020-01-03 山东大学 一种宽带可调谐Moire光栅激光器及其工作方法
GB2571269B (en) 2018-02-21 2021-07-07 Rockley Photonics Ltd Optoelectronic device
JP7012409B2 (ja) * 2018-03-14 2022-01-28 古河電気工業株式会社 光導波路構造及びその製造方法
CN110376766B (zh) * 2018-04-12 2021-03-30 海思光电子有限公司 一种反射装置及可调谐激光器
EP3565068B1 (en) * 2018-04-30 2021-02-24 FRAUNHOFER-GESELLSCHAFT zur Förderung der angewandten Forschung e.V. Thermally tunable laser and method for fabricating such laser
CN109066291A (zh) * 2018-08-30 2018-12-21 武汉光迅科技股份有限公司 一种半导体芯片及其制作方法
CN109193330B (zh) * 2018-09-14 2020-08-25 中国科学院半导体研究所 光反馈结构及可调谐窄线宽外腔激光器
WO2020107315A1 (zh) * 2018-11-29 2020-06-04 华为技术有限公司 两段式dbr激光器及单片集成阵列光源芯片
US11262603B2 (en) 2019-06-13 2022-03-01 Rockley Photonics Limited Multilayer metal stack heater
KR102710733B1 (ko) * 2019-08-20 2024-09-30 삼성전자주식회사 광 변조 소자 및 이를 포함하는 전자 장치
KR20230015318A (ko) 2020-04-03 2023-01-31 오토모티브 코우얼리션 포 트래픽 세이프티, 인크. 광범위하게 튜닝 가능한 단일 모드 방출 반도체 레이저
CN113568097B (zh) * 2020-04-29 2023-08-22 朗美通经营有限责任公司 热控光子结构
US11502480B2 (en) * 2020-04-29 2022-11-15 Lumentum Operations Llc Thermally-controlled photonic structure
KR102687553B1 (ko) * 2020-07-23 2024-07-24 한국전자통신연구원 광 도파로 소자 및 그를 포함하는 레이저 장치
CN116111451A (zh) * 2021-11-11 2023-05-12 武汉光迅科技股份有限公司 一种新型结构的热调谐激光器芯片及其制作方法
CN117154531B (zh) * 2022-05-07 2025-11-14 武汉光迅科技股份有限公司 一种新型结构的热调谐激光器芯片及其制作方法
CN117335261B (zh) * 2022-06-27 2025-11-11 武汉光迅科技股份有限公司 一种新型结构的热调谐激光器芯片及其制作方法
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Publication number Publication date
JP6093660B2 (ja) 2017-03-08
EP2682794B1 (en) 2018-05-16
US20140010248A1 (en) 2014-01-09
EP2682794A1 (en) 2014-01-08
CN103532009A (zh) 2014-01-22
JP2014017481A (ja) 2014-01-30
US8861556B2 (en) 2014-10-14

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