US8861556B2 - Tunable Bragg grating and a tunable laser diode using same - Google Patents

Tunable Bragg grating and a tunable laser diode using same Download PDF

Info

Publication number
US8861556B2
US8861556B2 US13/542,547 US201213542547A US8861556B2 US 8861556 B2 US8861556 B2 US 8861556B2 US 201213542547 A US201213542547 A US 201213542547A US 8861556 B2 US8861556 B2 US 8861556B2
Authority
US
United States
Prior art keywords
waveguide
ridge
layer
optical axis
openings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US13/542,547
Other languages
English (en)
Other versions
US20140010248A1 (en
Inventor
Michael C. Larson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumentum Operations LLC
Original Assignee
JDS Uniphase Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JDS Uniphase Corp filed Critical JDS Uniphase Corp
Priority to US13/542,547 priority Critical patent/US8861556B2/en
Assigned to JDS UNIPHASE CORPORATION reassignment JDS UNIPHASE CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LARSON, MICHAEL C.
Priority to EP12184980.6A priority patent/EP2682794B1/en
Priority to JP2013135652A priority patent/JP6093660B2/ja
Priority to CN201310268947.6A priority patent/CN103532009B/zh
Publication of US20140010248A1 publication Critical patent/US20140010248A1/en
Application granted granted Critical
Publication of US8861556B2 publication Critical patent/US8861556B2/en
Assigned to LUMENTUM OPERATIONS LLC reassignment LUMENTUM OPERATIONS LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JDS UNIPHASE CORPORATION
Assigned to LUMENTUM OPERATIONS LLC reassignment LUMENTUM OPERATIONS LLC CORRECTIVE ASSIGNMENT TO CORRECT INCORRECT PATENTS 7,868,247 AND 6,476,312 ON PAGE A-A33 PREVIOUSLY RECORDED ON REEL 036420 FRAME 0340. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Assignors: JDS UNIPHASE CORPORATION
Assigned to LUMENTUM OPERATIONS LLC reassignment LUMENTUM OPERATIONS LLC CORRECTIVE ASSIGNMENT TO CORRECT PATENTS 7,868,247 AND 6,476,312 LISTED ON PAGE A-A33 PREVIOUSLY RECORDED ON REEL 036420 FRAME 0340. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Assignors: JDS UNIPHASE CORPORATION
Assigned to DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT reassignment DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT PATENT SECURITY AGREEMENT Assignors: LUMENTUM OPERATIONS LLC, OCLARO FIBER OPTICS, INC., OCLARO, INC.
Assigned to OCLARO, INC., LUMENTUM OPERATIONS LLC, OCLARO FIBER OPTICS, INC. reassignment OCLARO, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: DEUTSCHE AG NEW YORK BRANCH
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12097—Ridge, rib or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12107—Grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12176—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1234—Actively induced grating, e.g. acoustically or electrically induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Definitions

  • the present invention relates to optical waveguides and lasers, and in particular to structures and methods for tuning optical waveguide gratings in lasers.
  • a laser diode includes a p-n junction between a pair of mirrors for creating optical feedback for light generated and amplified at the p-n junction when a forward current is applied to the p-n junction.
  • the mirrors are made wavelength selective, and a reflection wavelength of at least one of the mirrors is tuned.
  • waveguide gratings are frequently used as wavelength selective mirrors.
  • periodic perturbations of the effective refractive index of the waveguide are created to selectively reflect light at a wavelength corresponding to the spatial frequency of the periodic refractive index perturbations.
  • a waveguide grating can be tuned by heating or, for waveguide gratings formed at a p-n junction, by providing a direct current to the p-n junction, which changes its overall refractive index through carrier injection.
  • waveguides suspended over a substrate without additional structural support are prone to a mechanical failure.
  • Multiple legs were used in a Cunningham device to support the suspended waveguide along their length, but these can result in an overly complex waveguide structure and/or interfere with the optical function of the waveguide.
  • a waveguide Bragg grating is suspended over a substrate by plurality of fingers extending laterally away from the waveguide centerline, resulting in a simple and easily manufacturable structure.
  • the Bragg grating can be in the form of a sampled grating, which consists of periodically spaced uniform grating bursts separated by blanked regions without gratings, and is characterized by a grating period of a high spatial frequency and a burst period of a low spatial frequency. More generally, the Bragg grating can consist of a slow spatial modulation of the grating strength or the grating phase along the waveguide centerline or optical axis, forming crests and valleys of modulation. The crests and valleys can be of a square shape, such as in a sampled grating, or of a smooth, wave-like varying shape.
  • the positions of the fingers are coordinated with the positions of the crests and valleys of modulation, to avoid disturbing the Bragg grating upon thermal tuning of the grating.
  • the heat flows through the fingers, creating a quasi-periodic refractive index variation along the Bragg grating optical axis due to a quasi-periodic temperature variation created by the heat flow from the grating through the supporting fingers. Since the positions of the supporting fingers are coordinated with the positions of the grating modulation crests and valleys, the optical phase coherence is maintained between the grating modulation crests, so that the Bragg grating is not disturbed by the heating. As a result, smooth and continuous tuning of the Bragg grating is possible substantially without perturbing the reflection bandshape.
  • a tunable Bragg grating comprising:
  • first and second spaced apart support bars extending upwardly from the first substrate section
  • first waveguide for guiding light therein, wherein the first waveguide has an optical axis and is supported by the first and second support bars above the first substrate section, so that a first gap exists between the first substrate section and the first waveguide,
  • an effective refractive index of the first waveguide is spatially modulated along the optical axis, forming a grating for reflecting an optical frequency component of the light guided by the first waveguide to propagate back therein, wherein at least one of phase or amplitude of the spatial modulation of the effective refractive index is varying along the optical axis, forming modulation crests and valleys, wherein the crests are spaced apart at a first spatial frequency along the optical axis;
  • a first resistive heater disposed on the first waveguide, for heating the first waveguide for tuning an optical frequency of the reflected optical frequency component
  • the first waveguide has first and second arrays of openings extending therethrough and into the first gap, the openings of the first and second arrays running along the optical axis of the first waveguide on respective opposite first and second sides of the optical axis, the first and second arrays of openings defining first and second arrays of heat conducting fingers, respectively, extending between the optical axis and the first and second support bars, respectively,
  • positions of the heat conducting fingers along the optical axis are coordinated with positions of the modulation crests and valleys along the optical axis
  • spatial refractive index variations caused by spatial temperature variations along the optical axis due to heat flow through the heat conducting fingers to the first and second support bars, are spatially coordinated with the modulation crests and valleys.
  • the spatial frequency of the heat conducting fingers along the optical axis is an integer multiple of the first spatial frequency.
  • a tunable laser diode comprising:
  • a substrate comprising the first substrate section
  • the spacer layer comprising the first and second support bars
  • an active waveguide for amplifying the light, optically coupled to the tunable Bragg grating and disposed in mechanical, thermal, and electrical contact with the spacer layer;
  • an electrode disposed on the active waveguide, for providing electrical current thereto.
  • the active waveguide and the first waveguide comprise a single monolithically fabricated shallow-ridge waveguide, which results in a particularly simple and efficient structure.
  • Bulk micromachining from the back of the substrate can be used to have the first gap to extend completely through the first substrate section.
  • a method for tuning a laser diode having an active waveguide comprising:
  • a tunable Bragg grating having a substrate, first and second spaced apart support bars extending upwardly from the substrate, and a first waveguide optically coupled to the active waveguide, wherein the first waveguide has an optical axis and is supported by the first and second support bars above the substrate, forming a gap between the substrate and the first waveguide, wherein an effective refractive index of the first waveguide is spatially modulated along the optical axis, forming a grating for reflecting an optical frequency component of the light guided by the first waveguide to propagate back therein, wherein at least one of phase or amplitude of the spatial modulation of the effective refractive index is varying along the optical axis, forming modulation crests and valleys spaced apart at a first spatial frequency along the optical axis;
  • step (b) comprises disposing the openings so that positions of the heat conducting fingers along the optical axis are coordinated with positions of the modulation crests and valleys along the optical axis;
  • FIG. 1A is a top schematic view of a Sampled Grating Distributed Bragg Reflector (SG-DBR) laser of the invention including a tunable Bragg grating of the invention;
  • SG-DBR Sampled Grating Distributed Bragg Reflector
  • FIG. 1B is a magnified view of the DBR of FIG. 1A superposed with a corresponding effective refractive index plot of the Bragg grating, showing burst modulation of the grating;
  • FIG. 1C is a plan view of a variant of the Bragg grating having a continuous variation of modulation depth, superposed with a corresponding refractive index plot;
  • FIGS. 2A , 2 B, and 2 C are cross-sectional views taken along lines A-A, B-B, and C-C, respectively, of FIG. 1A ;
  • FIGS. 3A and 3B are a plan and side cross-sectional views, respectively, of an embodiment of the SG-DBR laser of FIG. 1A , comprising an optical amplifier section;
  • FIG. 4 is a three-dimensional view of an embodiment of a tunable Bragg grating having a uniform top heater, showing a simulated temperature distribution of the surface of the Bragg grating;
  • FIGS. 5A and 5B are cross-sectional views of the temperature distribution of the tunable Bragg grating of FIG. 4 taken along lines A-A and B-B, respectively, of FIG. 4 ;
  • FIG. 6 is a longitudinal distribution of the waveguide temperature of the tunable Bragg grating of FIG. 4 ;
  • FIG. 7 is a simulated temporal plot of the temperature variation upon application of a heat pulse to the Bragg grating of FIG. 4 ;
  • FIG. 8 is a three-dimensional view of an embodiment of a tunable Bragg grating having a plurality of electrically connected, jointly driven individual heaters;
  • FIG. 9A is a SG-DBR laser including the tunable Bragg grating of FIG. 8 ;
  • FIG. 9B is a schematic top view of the connection of the resistive heaters of the tunable Bragg grating of FIG. 8 ;
  • FIG. 10A is a cross-sectional view of the SG-DBR laser of FIG. 1A ;
  • FIG. 10B is a magnified cross-sectional view of FIG. 10A ;
  • FIGS. 11A and 11B are side and bottom views, respectively, of a SG-DBR laser, in which the tunable Bragg gratings are suspended over the substrate by using bulk micromachining.
  • a SG-DBR laser 120 of the invention includes front and back tunable Bragg gratings (DBR) 100 , a gain section 126 , and an optional phase section 160 .
  • the Bragg gratings 100 , the gain section 126 , and the phase section 160 are sections of a ridge waveguide structure having a common top ridge 115 for guiding a light mode 108 .
  • the Bragg gratings 100 include a first substrate section 102 , first and second spaced apart support bars 104 extending upwardly from the first substrate section 102 , a first ridge waveguide 106 , and a first resistive heater 117 .
  • the first ridge waveguide 106 is supported by the first and second support bars 104 above the first substrate section 102 , forming a first gap 105 between the first substrate section 102 and the first ridge waveguide 106 .
  • the first ridge waveguide 106 includes a stack of: a bottom cladding layer 110 supported by the first and second support bars 104 , a core layer 112 disposed on the bottom cladding layer 110 , and a top cladding layer 114 disposed on the core layer 112 .
  • the top cladding layer 114 has the ridge 115 on top, for guiding the light mode 108 along the ridge 115 .
  • the refractive index of the core layer 112 is higher than refractive indices of the top 114 and bottom 110 cladding layers, for confining the light 108 guided by the ridge 115 substantially to the core layer 112 .
  • the effective refractive index of the first ridge waveguide 106 is spatially modulated, forming a grating for reflecting an optical frequency component 109 of the light 108 guided by the first ridge waveguide 106 to propagate back therein.
  • the refractive index of the core layer 112 can be spatially modulated, or the ridge 115 can be laterally corrugated to create the spatial modulation of the effective refractive index.
  • At least one of phase or amplitude of the spatial modulation of the effective refractive index is varying along the optical axis, forming modulation crests 116 - 1 and valleys 116 - 2 .
  • the grating period can be about 0.24 micrometers
  • the length of a sampled grating burst (modulation crest 116 - 1 ) can be 3 micrometers
  • the burst period, or distance between neighboring crests 116 - 1 can be 50 micrometers.
  • the first resistive heater 117 is disposed on an insulating dielectric layer, not shown, which is deposited on the top cladding layer 114 .
  • the first ridge waveguide 106 has first and second arrays of openings 118 A and 118 B, respectively, extending through the first ridge waveguide 106 and into the first gap 105 .
  • the openings 118 A and 118 B run on opposite sides of the ridge 115 , defining first and second arrays of heat conducting fingers 119 A and 119 B, respectively, extending from the ridge 115 towards the first and second support bars 104 .
  • first and last openings 118 C of the first array of the openings 118 A are longer than the remainder of the openings 118 A.
  • the first and last openings 118 D of the first array of the openings 118 B are preferably longer than the remainder of the openings 118 B.
  • the longer openings 118 C and 118 D facilitate creation of a more uniform temperature distribution upon heating the DBR 100 by the first resistive heater 117 . Both length and width of first and last openings 118 C and 118 D can be adjusted to improve the temperature uniformity.
  • the first ridge waveguide 106 can be burst-modulated ( FIG. 1B ) or smoothly modulated ( FIG. 1C ), or modulated in a more complicated manner.
  • the modulation can include amplitude or phase modulation or both.
  • the modulation can be periodic or quasi-periodic.
  • the modulation crests 116 - 1 comprise bursts of a sampled Bragg grating, having substantially no modulation in the valleys 116 - 2 between the bursts 116 - 1 .
  • the modulation is more smooth, so that the modulation valleys 116 - 2 have some refractive index modulation.
  • the modulation crests 116 - 1 are spaced apart at a first spatial frequency f 1 along an optical axis 107 of the first ridge waveguide 106 .
  • positions of the heat conducting fingers 119 A along the optical axis 107 are coordinated with positions of the modulation crests 116 - 1 and valleys 116 - 2 along the optical axis 107 .
  • the second spatial frequency f 2 of the heat conducting fingers 119 A and 119 B along the ridge 115 is an integer multiple of the first spatial frequency f 1 .
  • f 2 2f 1 ; and in FIG. 1C , the frequencies f 1 and f 2 are equal.
  • the gain section 126 includes a substrate 122 , which is preferably a common substrate with the first substrate section 102 , a spacer layer 124 supported by the substrate 122 , an active waveguide 126 for amplifying the light mode 108 , and a first electrode 137 for providing electrical current to the active waveguide 126 .
  • the spacer layer 124 includes the first and second support bars 104 of the tunable DBR section, or Bragg grating 100 .
  • the active waveguide 126 is optically coupled to the tunable DBR section 100 and disposed in mechanical, thermal, and electrical contact with the spacer layer 124 .
  • the active waveguide layer 126 includes the stack of: a first conductivity type layer 130 supported by the spacer layer 124 and integrally formed with the bottom cladding layer 110 ; a junction layer 132 supported by the first conductivity type layer 130 and integrally formed with the core layer 112 ; and a second conductivity type layer 134 supported by the junction layer 132 and integrally formed with the top cladding layer.
  • the ridge 115 runs through the first ridge waveguide 106 and the active waveguide 126 for providing optical coupling therebetween.
  • the first and second conductivity type layers 130 and 134 include n- and p-doped InP layers, respectively, the junction layer 132 includes InGaAsP quantum wells, and the spacer layer 124 includes an InGaAs layer.
  • the phase section 160 is a variant of the structure of the DBR section 100 , lacking the spatial modulation of the refractive index.
  • the phase section 160 includes a second substrate section 142 , third and fourth support bars 144 extending upwardly from the second substrate section 142 , and a second ridge waveguide 146 for guiding the light mode 108 , supported by the third and fourth support bars 144 above the second substrate section 142 , forming a second gap 145 between the second substrate section 142 and the second ridge waveguide 146 .
  • the second ridge waveguide 146 includes the same stack as the first ridge waveguide 106 , with the difference that the effective refractive index of the second ridge waveguide 146 is not spatially modulated.
  • a second resistive heater 157 is disposed on the top cladding layer 114 , for providing heating of the second ridge waveguide 146 for tuning optical phase of the light mode 108 propagating therein.
  • the guided light mode 108 generated in the gain section 126 propagates along the ridge 115 .
  • An optical frequency component 109 of the guided light mode 108 is reflected to propagate back along the ridge 115 towards the gain section 126 , thus providing an optical feedback to the laser 120 .
  • the reflected optical frequency component 109 has a wavelength corresponding to the spatial frequency of the effective refractive index modulation of the first ridge waveguide 106 .
  • the first resistive heater 117 provides heating to the first ridge waveguide 106 , for tuning the optical frequency of the reflected optical frequency component 109 .
  • first resistive heater 117 When heat is applied by the first resistive heater 117 to the first ridge waveguide 106 , spatial refractive index variations, caused by spatial temperature variations along the ridge 115 due to heat flow through the heat conducting fingers 119 A and 119 B to the first and second support bars 104 , are spatially coordinated with the modulation crests 116 - 1 . As a result, the heating by the first resistive heater 117 substantially does not disturb or modify the reflected frequency spectrum beyond simply tuning of the center frequency of the reflected frequency spectrum. This allows one to reduce a bandwidth variation as the laser 120 is tuned in optical frequency or wavelength.
  • the first and second gaps 105 and 145 can be filled with a chemically inert gas such as xenon, argon, or nitrogen. Also, the first and second gaps 105 and 145 can form a single gap, although the latter structure will have somewhat increased thermal crosstalk between the tunable DBR and phase sections 100 and 160 , respectively; this is why two separate gaps 105 and 145 are preferred.
  • the gap 105 can be formed by lateral selective undercut etching of the sacrificial spacer layer 124 .
  • the gap 145 can be formed by selective etching of the spacer layer through the openings 118 A, 118 B, 118 C, and 118 D. These etching techniques are generally referred to as “micromachining”, a term adopted from micro-electro-mechanical systems (MEMS) manufacturing.
  • the first and second ridge waveguides 106 and 146 , respectively, and the active waveguide 126 preferably form a single monolithic shallow-ridge waveguide structure having the active section 126 , the tunable Bragg grating or DBR section 100 , and the phase section 160 .
  • the openings 118 A- 118 D and the gap 105 are particularly easy to form in shallow-ridge waveguides, ensuring ease of overall manufacture.
  • the ridge type waveguides are only example embodiments of waveguides of the invention.
  • Other waveguide types known to a person skilled in the art, can also be used in the tunable Bragg grating 100 , the gain section 126 , and/or the phase section 160 .
  • the other waveguide types must be suspended over the substrate 102 by the support bars 104 , and the at least one of phase or amplitude of the spatial modulation of the effective refractive index of the Bragg grating 100 has to have a plurality of crests 116 - 1 and valleys 116 - 2 .
  • the positions of the heat conducting fingers 119 A and 119 B along the optical axis 107 have to be coordinated with the positions of the crests 116 - 1 and valleys 116 - 2 along the optical axis 107 , to lessen the bandshape variation of the reflected optical frequency component 109 .
  • an embodiment 320 of the SG-DBR laser 120 of FIG. 1A includes two tunable DBR sections 100 , the phase section 160 , the gain section 126 , and an amplifier section 300 formed within a common shallow-ridge waveguide 306 suspended over the common substrate 122 at the tunable DBR sections 100 and the phase section 160 .
  • a back-facet absorber section 301 is provided for absorbing laser light at the left-hand side of the waveguide 306 in FIG. 3A , to prevent light reflected from a left facet 310 of the shallow-ridge waveguide 306 to interfere with light selectively reflected by the left tunable Bragg grating 100 .
  • a common backplane electrode 302 is electrically coupled to a back side of the substrate 122 .
  • the gain section 126 is powered with the first electrode 137
  • the amplifier section 300 is powered by a second electrode 337 or providing electrical current to the amplifier section 300 .
  • the first and second electrodes 137 and 337 , and the heaters 117 and 157 are omitted in FIG. 3A , so as not to hide the underlying structures.
  • the function of the amplifier section 300 is to amplify the light 108 generated in the gain section 126 , to provide a constant output power as the emission wavelength of the laser 320 is tuned by the synchronously tuned Bragg gratings 100 .
  • the output power can be measured by an integrated photodetector 314 .
  • the resistive heaters 117 of the tunable Bragg gratings 100 are uniform thin-film resistive heaters applied to the ridge 115 of the ridge waveguide 106 , with current passing along the length of the heater 117 between two contact pads 117 A.
  • a passivating layer of dielectric is disposed between the thin-film heater 117 and the underlying ridge waveguide 106 .
  • Positions, lengths, and widths of the openings 118 A to 118 D are selected so as to create a substantially uniform temperature distribution along the ridge 115 .
  • the positions, lengths, and widths of the openings 118 A to 118 D define lengths and widths of the heat conducting fingers 119 A and 119 B.
  • the openings 118 A and 118 B define a mesa 410 therebetween, and this mesa 410 limits the optical interaction between the optical mode 108 of the ridge waveguide 106 and the refractive index discontinuity resulting from the openings 118 A, 118 B.
  • the length and width of the mesa 410 including end mesa sections 411 have an impact on the resulting temperature distribution. In the simulation of FIGS.
  • the ridge 115 is 2 micrometers tall and 2 micrometers wide.
  • the mesa width (distance between the openings 118 A and 118 B of the first and second arrays, respectively) is 20 micrometers
  • the thickness of the mesa sections 410 , 411 is 2 micrometers
  • the height of the gap 105 (vertical dimension of the gap 105 in FIGS. 2A and 2B ) is 2 micrometers.
  • the total length of the mesa 410 is 400 micrometers.
  • the material is InP.
  • FIG. 5A the simulated temperature distribution of the mesa 410 between the heat conducting fingers 119 A and 119 B is shown.
  • the temperature distribution is along the heat conducting fingers 119 A and 119 B.
  • FIG. 6 a longitudinal distribution 600 of the temperature of the waveguide sections 410 , 411 is shown.
  • the temperature varies from approximately 303° K to 334° K.
  • the temperature along the mesa sections 410 , 411 oscillates at approximately 3° K peak-to-peak amplitude, the peaks of the temperature distribution being denoted at 602 .
  • the peak temperatures have been made substantially uniform by optimizing the geometry of the end openings 118 C and 118 D and the end mesa sections 411 , such that heat generation along the end mesa section 411 is balanced by heat conduction through the end mesa section 411 to the spacer layer 124 and the substrate 122 . Since the positions of the heat conducting fingers 119 A and 119 B along the ridge 115 are coordinated with the positions of the modulation crests 116 - 1 along the ridge 115 , the temperature oscillation peaks 602 are also coordinated with the positions of the modulation crests 116 - 1 (not shown in FIGS.
  • the spectral filtering properties of the Bragg grating 100 are very similar to those with an ideally even temperature profile. It is to be understood that the end mesa sections 411 , where the temperature is varying from approximately the temperature of the substrate 102 at the ends to the peak temperature at the first fingers 119 A and 119 B, can minimally include gratings because of the highly non-uniform temperature profile.
  • a simulated time trace 700 of temperature rise upon a quasi-instantaneous application of the 25 mW of heater power shows that the 27.5° K temperature increase is achieved in less than 100 microseconds.
  • the cooling-down time is also below 100 microseconds, which is more than 16 times faster than the tuning time reported by Ishii et al. in the above-mentioned paper entitled “Narrow spectral linewidth under wavelength tuning in thermally tunable super-structure grating (SSG) DBR lasers”, published in IEEE Journal of Selected Topics in Quantum Electronics, Vol. 1, No. 2 (1995), pp. 401-407.
  • a tunable Bragg grating 800 is a variant of the tunable Bragg grating 100 of FIG. 1A .
  • the first resistive heater 117 includes a plurality of electrically coupled individual thin-film heaters 817 running on top of the heat conducting fingers 119 A and 119 B. Additional heater elements 817 A are disposed on the ends 411 of the mesa 410 , to further improve uniformity of the temperature distribution.
  • a SG-DBR laser 820 is a variant of the SG-DBR laser 320 of FIG. 3A . In the SG-DBR laser 920 of FIG.
  • the tunable Bragg gratings 100 of FIGS. 1A , 2 A, and 2 B have been replaced with the tunable Bragg gratings 800 of FIG. 8 .
  • a comparable longitudinal heater for example a tantalum nitride (TaN) thin film of a same thickness, would have many times higher resistance. This connection of the individual heaters 817 can better match the impedance of driving electronics, not shown.
  • the individual thin-film heaters 117 must run on top of at least some of the heat conducting fingers 119 A and 119 B. By placing heating elements 117 only on the heat conducting fingers 119 A and 119 B and on the ends 411 of the mesa 410 , a substantial reduction in the longitudinal peak-to-peak temperature variation along the mesa 410 can be achieved.
  • the spacer layer 124 can include a sacrificial InGaAs layer. 1-2 micrometer thick sacrificial InGaAs layer 124 provides a good electrical contact of the active waveguide 126 to the substrate 122 . Detrimentally, such a thick sacrificial InGaAs layer 124 can be difficult to grow and subsequently micromachine to manufacture the support bars 104 , and its thermal impedance will have a deleterious effect on active section performance.
  • the spacer layer 124 can be made in form of a stack including several different layers. Referring to FIG. 1
  • the spacer layer 124 includes in sequence from bottom to top a 20 nm thick InGaAsP bottom etch stop layer 1002 having a bandgap wavelength of 1.2 ⁇ m, a 200 nm thick InP bottom second stage sacrificial layer 1004 , a 200 nm thick first stage InGaAs sacrificial layer 1006 , a 2000 nm thick InP top second stage sacrificial layer 1008 , and a 20 nm thick InGaAsP top etch stop layer 1010 .
  • InP can be grown much more easily to a larger thickness than InGaAs.
  • the thickness of the multilayer stack spacer layer 124 can be increased, the thickness of at least one of the InP sacrificial layers 1004 and 1008 being larger than the thickness of the InGaAs sacrificial layer 1006 , and the total thickness of the InGaAs or InGaAsP material can be reduced.
  • the spacer layer 124 of FIG. 10B can then be etched, or micromachined, in two etching steps, one for the InGaAs layer 1006 to achieve lateral undercut, and one for the InP layers 1004 and 1008 to etch vertically to achieve the thicker gap 105 .
  • a SG-DBR laser 1120 is an embodiment of the SG-DBR laser 320 of FIG. 3 .
  • the first and second gaps 105 and 145 of the tunable Bragg grating sections 100 and the phase section 160 extend completely through the substrate 122 . This can be achieved by using bulk micromachining techniques known from MEMS technologies, by etching through the bottom of the substrate 122 .
  • any laser diode having an active waveguide for laser light generation for example the active waveguide 126 of FIG. 1A , can be tuned according to the invention by following the three steps A, B, and C.
  • Step A includes providing a tunable Bragg grating such as the tunable DBR 100 , having the first substrate section 102 , the first and second spaced apart support bars 104 extending upwardly from the substrate section 102 , and a first waveguide, for example the ridge waveguide 106 optically coupled to the active waveguide 126 .
  • the first waveguide 106 is supported by the support bars 104 above the first substrate section 102 , forming the gap 105 between the first substrate section 102 and the first waveguide 106 .
  • the effective refractive index of the first waveguide is spatially modulated along the optical axis 107 , forming a grating for reflecting the optical frequency component 109 of the light 108 guided by the ridge waveguide 106 to propagate back.
  • At least one of phase or amplitude of the spatial modulation of the effective refractive index is varying along the optical axis, forming the modulation crests 116 - 1 and valleys 116 - 2 (best seen in FIGS. 1B and 1C ) spaced apart at a first spatial frequency f 1 along the optical axis 107 .
  • Step B includes providing first and second arrays of the openings 118 A to 118 D extending through the first waveguide 106 and into the gap 105 , the openings 118 A to 118 D running on respective opposite first and second sides of the optical axis 107 as shown.
  • the openings ( 118 A, 118 C) and ( 118 B, 118 D) define first and second arrays of heat conducting fingers 119 A and 119 B, respectively, extending from the optical axis 107 towards the support bars 104 .
  • Step B includes disposing the openings 118 A to 118 D so that positions of the heat conducting fingers 119 A and 119 B along the optical axis 107 are coordinated with the positions of the modulation crests 116 - 1 along the optical axis 107 .
  • Step B can also include disposing the first and last, or end openings 118 C and 118 D to achieve a substantially uniform longitudinal temperature profile along the length of the first waveguide 106 containing the grating.
  • Step C includes heating the first waveguide 106 for tuning the optical frequency of the optical frequency component, thereby tuning the laser diode. Due to coordination of the position of the heat conducting fingers 119 A and 119 B with the modulation crests 116 - 1 , the optical phase coherence of the light mode 108 is maintained between the modulation crests 116 - 1 , so that the spectral bandshape of the light 109 reflected by the tunable Bragg grating 100 is not disturbed, or at least disturbed less, in the process of tuning.
  • Step B comprises disposing the openings 118 A to 118 D so that the first and second arrays of the respective heat conducting fingers 119 A and 119 B are disposed at a second spatial frequency along the optical axis 107 , wherein the second spatial frequency is an integer multiple of the first spatial frequency.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
US13/542,547 2012-07-05 2012-07-05 Tunable Bragg grating and a tunable laser diode using same Active 2032-11-30 US8861556B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/542,547 US8861556B2 (en) 2012-07-05 2012-07-05 Tunable Bragg grating and a tunable laser diode using same
EP12184980.6A EP2682794B1 (en) 2012-07-05 2012-09-19 A tunable bragg grating, a tunable laser diode using same, and a corresponding method
JP2013135652A JP6093660B2 (ja) 2012-07-05 2013-06-27 チューナブル・ブラッグ・グレーティング、およびそれを用いたチューナブル・レーザ・ダイオード
CN201310268947.6A CN103532009B (zh) 2012-07-05 2013-06-28 可调谐布拉格光栅及使用该光栅的可调谐激光二极管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/542,547 US8861556B2 (en) 2012-07-05 2012-07-05 Tunable Bragg grating and a tunable laser diode using same

Publications (2)

Publication Number Publication Date
US20140010248A1 US20140010248A1 (en) 2014-01-09
US8861556B2 true US8861556B2 (en) 2014-10-14

Family

ID=47048966

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/542,547 Active 2032-11-30 US8861556B2 (en) 2012-07-05 2012-07-05 Tunable Bragg grating and a tunable laser diode using same

Country Status (4)

Country Link
US (1) US8861556B2 (enExample)
EP (1) EP2682794B1 (enExample)
JP (1) JP6093660B2 (enExample)
CN (1) CN103532009B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150355410A1 (en) * 2014-06-09 2015-12-10 Korea Advanced Institute Of Science And Technology Optical grating coupler having wavelength tunable structure
US20210288469A1 (en) * 2018-11-29 2021-09-16 Huawei Technologies Co., Ltd. Two-segment dbr laser and monolithically integrated array light source chip
CN113568097A (zh) * 2020-04-29 2021-10-29 朗美通经营有限责任公司 热控光子结构
US20210344166A1 (en) * 2020-04-29 2021-11-04 Lumentum Operations Llc Thermally-controlled photonic structure
US11211767B2 (en) 2017-05-09 2021-12-28 Huawei Technologies Co., Ltd. Reflector structure for tunable laser and tunable laser
US20220029378A1 (en) * 2020-07-23 2022-01-27 Electronics And Telecommunications Research Institute Optical waveguide device and laser apparatus including the same
US12032267B2 (en) 2019-08-20 2024-07-09 Samsung Electronics Co., Ltd. Light modulating device and electronic apparatus including the same

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2989699B1 (en) * 2013-04-30 2019-12-25 Huawei Technologies Co., Ltd. Tunable laser with high thermal wavelength tuning efficiency
US9509119B2 (en) 2015-01-13 2016-11-29 Futurewei Technologies, Inc. Tunable laser with a cascaded filter and comb reflector
CN105759350A (zh) * 2015-07-03 2016-07-13 苏州峰通光电有限公司 一种有机无机混合集成热光调制型光栅及其制备方法
EP3400635B1 (en) 2016-01-04 2023-06-07 Infinera Corporation Tunable waveguide devices
CN105527730A (zh) * 2016-01-06 2016-04-27 北京大学 一种光学相位调制器
CN107230930A (zh) * 2016-03-23 2017-10-03 华为技术有限公司 一种可调激光器及制备方法
GB2554460A (en) * 2016-09-29 2018-04-04 Oclaro Tech Ltd Waveguide structure
WO2018186471A1 (ja) * 2017-04-06 2018-10-11 国立大学法人横浜国立大学 光偏向デバイス
CN108732667B (zh) * 2017-04-17 2021-01-05 华为技术有限公司 一种超结构光栅和可调谐激光器
CN108879310B (zh) * 2017-05-10 2020-07-28 华为技术有限公司 用于可调激光器的反射镜结构和可调激光器
WO2019116657A1 (ja) * 2017-12-15 2019-06-20 株式会社堀場製作所 半導体レーザ
CN108173116B (zh) * 2018-02-07 2020-01-03 山东大学 一种宽带可调谐Moire光栅激光器及其工作方法
GB2571269B (en) 2018-02-21 2021-07-07 Rockley Photonics Ltd Optoelectronic device
JP7012409B2 (ja) * 2018-03-14 2022-01-28 古河電気工業株式会社 光導波路構造及びその製造方法
CN110376766B (zh) * 2018-04-12 2021-03-30 海思光电子有限公司 一种反射装置及可调谐激光器
EP3565068B1 (en) * 2018-04-30 2021-02-24 FRAUNHOFER-GESELLSCHAFT zur Förderung der angewandten Forschung e.V. Thermally tunable laser and method for fabricating such laser
CN109066291A (zh) * 2018-08-30 2018-12-21 武汉光迅科技股份有限公司 一种半导体芯片及其制作方法
CN109193330B (zh) * 2018-09-14 2020-08-25 中国科学院半导体研究所 光反馈结构及可调谐窄线宽外腔激光器
US11262603B2 (en) 2019-06-13 2022-03-01 Rockley Photonics Limited Multilayer metal stack heater
KR20230015318A (ko) 2020-04-03 2023-01-31 오토모티브 코우얼리션 포 트래픽 세이프티, 인크. 광범위하게 튜닝 가능한 단일 모드 방출 반도체 레이저
CN116111451A (zh) * 2021-11-11 2023-05-12 武汉光迅科技股份有限公司 一种新型结构的热调谐激光器芯片及其制作方法
CN117154531B (zh) * 2022-05-07 2025-11-14 武汉光迅科技股份有限公司 一种新型结构的热调谐激光器芯片及其制作方法
CN117335261B (zh) * 2022-06-27 2025-11-11 武汉光迅科技股份有限公司 一种新型结构的热调谐激光器芯片及其制作方法
WO2024257152A1 (ja) * 2023-06-12 2024-12-19 日本電信電話株式会社 半導体レーザ
CN120749533B (zh) * 2025-09-08 2025-12-02 武汉国科光领半导体科技有限公司 一种可调谐激光器的制备方法及结构

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4885753A (en) 1987-10-09 1989-12-05 Hitachi, Ltd. Semiconductor laser device of variable wavelength type
DE19629916A1 (de) 1995-07-25 1997-01-30 France Telecom Verteilter Bragg-Reflektorlaser mit Tastgitter und breiter Abstimmbarkeit durch Phasenänderung sowie Verwendungsverfahren dieses Lasers
GB2371920A (en) 2001-02-02 2002-08-07 Marconi Caswell Ltd Sampled Gating Distribiuted Reflector Laser
GB2378311A (en) 2001-08-03 2003-02-05 Marconi Caswell Ltd Tunable Laser
EP1478064A1 (en) 2003-05-15 2004-11-17 Electronics and Telecommunications Research Institute Widely tunable sampled-grating distributed feedback laser diode
EP1753104A2 (en) 2005-08-11 2007-02-14 Eudyna Devices Inc. Semiconductor laser
EP1804349A1 (en) 2005-12-27 2007-07-04 Eudyna Devices Inc. Sampled grating laser diode with DFB and DBR incorporating phase shifts
EP1841023A2 (en) 2006-03-30 2007-10-03 Eudyna Devices Inc. Temperature tuning of the wavelength of a laser diode by heating
EP1978612A2 (en) 2007-04-05 2008-10-08 Eudyna Devices Inc. Optical semiconductor device and method of controlling the same
US20090041073A1 (en) 2007-04-13 2009-02-12 Finisar Corporation Dbr laser with improved thermal tuning efficiency
US20090074020A1 (en) 2007-05-14 2009-03-19 Finisar Corporation DBR laser with improved thermal tuning effciency
US20100290736A1 (en) * 2009-03-31 2010-11-18 Sun Microsystems, Inc. Optical device with large thermal impedance
US20110235962A1 (en) 2010-03-24 2011-09-29 Oracle International Corporation Optical device with high thermal tuning efficiency

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0969666A (ja) * 1995-09-01 1997-03-11 Oki Electric Ind Co Ltd 半導体レーザ装置及びその動作方法
JP2007273650A (ja) * 2006-03-30 2007-10-18 Eudyna Devices Inc 光半導体装置

Patent Citations (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4885753A (en) 1987-10-09 1989-12-05 Hitachi, Ltd. Semiconductor laser device of variable wavelength type
DE19629916A1 (de) 1995-07-25 1997-01-30 France Telecom Verteilter Bragg-Reflektorlaser mit Tastgitter und breiter Abstimmbarkeit durch Phasenänderung sowie Verwendungsverfahren dieses Lasers
US5748660A (en) * 1995-07-25 1998-05-05 France Telecom Sample grating distributed bragg reflector laser, very widely matchable by phase variation and process for using this laser
GB2371920A (en) 2001-02-02 2002-08-07 Marconi Caswell Ltd Sampled Gating Distribiuted Reflector Laser
GB2378311A (en) 2001-08-03 2003-02-05 Marconi Caswell Ltd Tunable Laser
US20050053102A1 (en) * 2001-08-03 2005-03-10 Reid Douglas Charles John Tuneable laser
EP1478064A1 (en) 2003-05-15 2004-11-17 Electronics and Telecommunications Research Institute Widely tunable sampled-grating distributed feedback laser diode
US20040228384A1 (en) * 2003-05-15 2004-11-18 Su-Hwan Oh Widely tunable sampled-grating distributed feedback laser diode
EP1753104A2 (en) 2005-08-11 2007-02-14 Eudyna Devices Inc. Semiconductor laser
US20070036188A1 (en) * 2005-08-11 2007-02-15 Eudyna Devices Inc. Semiconductor laser, optical element, laser device, and method of controlling semiconductor laser
EP1804349A1 (en) 2005-12-27 2007-07-04 Eudyna Devices Inc. Sampled grating laser diode with DFB and DBR incorporating phase shifts
US20070263694A1 (en) * 2005-12-27 2007-11-15 Eudyna Devices Inc. Laser device, laser module, semiconductor laser and fabrication method of semiconductor laser
US20070230523A1 (en) * 2006-03-30 2007-10-04 Eudyna Devices Inc. Optical semiconductor device, laser chip and laser module
EP1841023A2 (en) 2006-03-30 2007-10-03 Eudyna Devices Inc. Temperature tuning of the wavelength of a laser diode by heating
EP1978612A2 (en) 2007-04-05 2008-10-08 Eudyna Devices Inc. Optical semiconductor device and method of controlling the same
US20080247707A1 (en) * 2007-04-05 2008-10-09 Eudyna Devices Inc. Optical semiconductor device and method of controlling the same
US20090041073A1 (en) 2007-04-13 2009-02-12 Finisar Corporation Dbr laser with improved thermal tuning efficiency
US20090074020A1 (en) 2007-05-14 2009-03-19 Finisar Corporation DBR laser with improved thermal tuning effciency
US7778295B2 (en) 2007-05-14 2010-08-17 Finisar Corporation DBR laser with improved thermal tuning efficiency
US20100311195A1 (en) * 2007-05-14 2010-12-09 Finisar Corporation DBR Laser with Improved Thermal Tuning Efficiency
US20100290736A1 (en) * 2009-03-31 2010-11-18 Sun Microsystems, Inc. Optical device with large thermal impedance
US7848599B2 (en) 2009-03-31 2010-12-07 Oracle America, Inc. Optical device with large thermal impedance
US8131119B2 (en) 2009-03-31 2012-03-06 Oracle America, Inc. Optical device with large thermal impedance
US20110235962A1 (en) 2010-03-24 2011-09-29 Oracle International Corporation Optical device with high thermal tuning efficiency

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Ishii et al. "Narrow spectral linewidth under wavelength tuning in thermally tunable super-structure grating (SSG) DBR lasers", IEEE Journal of Selected Topics in Quantum Electronics, vol. 1, No. 2 (1995), pp. 401-407.
Search Report for European Application No. 12184980, dated Oct. 10, 2013.

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150355410A1 (en) * 2014-06-09 2015-12-10 Korea Advanced Institute Of Science And Technology Optical grating coupler having wavelength tunable structure
US11211767B2 (en) 2017-05-09 2021-12-28 Huawei Technologies Co., Ltd. Reflector structure for tunable laser and tunable laser
US20210288469A1 (en) * 2018-11-29 2021-09-16 Huawei Technologies Co., Ltd. Two-segment dbr laser and monolithically integrated array light source chip
US12032267B2 (en) 2019-08-20 2024-07-09 Samsung Electronics Co., Ltd. Light modulating device and electronic apparatus including the same
CN113568097A (zh) * 2020-04-29 2021-10-29 朗美通经营有限责任公司 热控光子结构
US20210344166A1 (en) * 2020-04-29 2021-11-04 Lumentum Operations Llc Thermally-controlled photonic structure
US11502480B2 (en) * 2020-04-29 2022-11-15 Lumentum Operations Llc Thermally-controlled photonic structure
CN113568097B (zh) * 2020-04-29 2023-08-22 朗美通经营有限责任公司 热控光子结构
US12142893B2 (en) 2020-04-29 2024-11-12 Lumentum Operations Llc Thermally-controlled photonic structure
US20220029378A1 (en) * 2020-07-23 2022-01-27 Electronics And Telecommunications Research Institute Optical waveguide device and laser apparatus including the same
US12068576B2 (en) * 2020-07-23 2024-08-20 Electronics And Telecommunications Research Institute Optical waveguide device and laser apparatus including the same

Also Published As

Publication number Publication date
JP6093660B2 (ja) 2017-03-08
EP2682794B1 (en) 2018-05-16
US20140010248A1 (en) 2014-01-09
CN103532009B (zh) 2018-05-01
EP2682794A1 (en) 2014-01-08
CN103532009A (zh) 2014-01-22
JP2014017481A (ja) 2014-01-30

Similar Documents

Publication Publication Date Title
US8861556B2 (en) Tunable Bragg grating and a tunable laser diode using same
JP5737777B2 (ja) 波長可変レーザアレイ素子の制御方法および制御装置
EP2849294B1 (en) A Tunable Laser
JP5795126B2 (ja) 半導体レーザ素子、集積型半導体レーザ素子、および、半導体レーザ素子の製造方法
US7180930B2 (en) DFB semiconductor laser device having ununiform arrangement of a diffraction grating
JP2014017481A5 (enExample)
US8638825B2 (en) Wavelength tunable laser diode
CN103858294A (zh) 单片集成的可调谐半导体激光器
US8238388B2 (en) Tunable laser device and a method for producing light of respective selectable wavelengths
JP2003046190A (ja) 半導体レーザ
US7079310B2 (en) Gain-clamped optical amplifier
JP2010212447A (ja) 波長掃引光源
JP2004221321A (ja) 波長可変半導体光装置
JP5899136B2 (ja) 波長可変レーザアレイ素子およびその制御方法
JP2017028231A (ja) 波長可変半導体レーザ
JP4926641B2 (ja) 半導体レーザ
CN110376766B (zh) 一种反射装置及可调谐激光器
JP5103421B2 (ja) 波長掃引光源
JP2010192528A (ja) 半導体光素子とそれを用いた波長掃引光源
JP5303580B2 (ja) 光半導体装置、レーザチップおよびレーザモジュール
WO2023119367A1 (ja) 半導体レーザ
US20070242708A1 (en) Method for Designing a Semiconductor Laser with Intracavity Reflecting Features, Semiconductor Laser Method of Fabrication Thereof
JP5103416B2 (ja) 波長掃引光源
JP2011071563A (ja) 光半導体装置
US20220123526A1 (en) Semiconductor lasers with improved frequency modulation response

Legal Events

Date Code Title Description
AS Assignment

Owner name: JDS UNIPHASE CORPORATION, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LARSON, MICHAEL C.;REEL/FRAME:028495/0972

Effective date: 20120703

STCF Information on status: patent grant

Free format text: PATENTED CASE

AS Assignment

Owner name: LUMENTUM OPERATIONS LLC, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:JDS UNIPHASE CORPORATION;REEL/FRAME:036420/0340

Effective date: 20150731

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

AS Assignment

Owner name: LUMENTUM OPERATIONS LLC, CALIFORNIA

Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE PATENTS LISTED ON PAGE A-A33 PREVIOUSLY RECORDED ON REEL 036420 FRAME 0340. ASSIGNOR(S) HEREBY CONFIRMS THE PATENT NUMBERS 7,868,247 AND 6,476,312 WERE LISTED IN ERROR AND SHOULD BE REMOVED;ASSIGNOR:JDS UNIPHASE CORPORATION;REEL/FRAME:037562/0513

Effective date: 20150731

Owner name: LUMENTUM OPERATIONS LLC, CALIFORNIA

Free format text: CORRECTIVE ASSIGNMENT TO CORRECT INCORRECT PATENTS 7,868,247 AND 6,476,312 ON PAGE A-A33 PREVIOUSLY RECORDED ON REEL 036420 FRAME 0340. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNOR:JDS UNIPHASE CORPORATION;REEL/FRAME:037562/0513

Effective date: 20150731

AS Assignment

Owner name: LUMENTUM OPERATIONS LLC, CALIFORNIA

Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE PATENTS LISTED ON PAGE A-A33 PATENT NUMBERS 7,868,247 AND 6,476,312 WERE LISTED IN ERROR AND SHOULD BE REMOVED. PREVIOUSLY RECORDED ON REEL 036420 FRAME 0340. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNOR:JDS UNIPHASE CORPORATION;REEL/FRAME:037627/0641

Effective date: 20150731

Owner name: LUMENTUM OPERATIONS LLC, CALIFORNIA

Free format text: CORRECTIVE ASSIGNMENT TO CORRECT PATENTS 7,868,247 AND 6,476,312 LISTED ON PAGE A-A33 PREVIOUSLY RECORDED ON REEL 036420 FRAME 0340. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNOR:JDS UNIPHASE CORPORATION;REEL/FRAME:037627/0641

Effective date: 20150731

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551)

Year of fee payment: 4

AS Assignment

Owner name: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT, NEW YORK

Free format text: PATENT SECURITY AGREEMENT;ASSIGNORS:LUMENTUM OPERATIONS LLC;OCLARO FIBER OPTICS, INC.;OCLARO, INC.;REEL/FRAME:047788/0511

Effective date: 20181210

Owner name: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AG

Free format text: PATENT SECURITY AGREEMENT;ASSIGNORS:LUMENTUM OPERATIONS LLC;OCLARO FIBER OPTICS, INC.;OCLARO, INC.;REEL/FRAME:047788/0511

Effective date: 20181210

AS Assignment

Owner name: OCLARO, INC., CALIFORNIA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:DEUTSCHE AG NEW YORK BRANCH;REEL/FRAME:051287/0556

Effective date: 20191212

Owner name: OCLARO FIBER OPTICS, INC., CALIFORNIA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:DEUTSCHE AG NEW YORK BRANCH;REEL/FRAME:051287/0556

Effective date: 20191212

Owner name: LUMENTUM OPERATIONS LLC, CALIFORNIA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:DEUTSCHE AG NEW YORK BRANCH;REEL/FRAME:051287/0556

Effective date: 20191212

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8