CN103531497B - 用于检测晶片上的缺陷的系统和方法 - Google Patents

用于检测晶片上的缺陷的系统和方法 Download PDF

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Publication number
CN103531497B
CN103531497B CN201310410071.4A CN201310410071A CN103531497B CN 103531497 B CN103531497 B CN 103531497B CN 201310410071 A CN201310410071 A CN 201310410071A CN 103531497 B CN103531497 B CN 103531497B
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wafer
view data
defect
image data
additional image
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Chinese (zh)
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CN103531497A (zh
Inventor
L·陈
J·柯克伍德
M·马哈德凡
J·A·史密斯
L·高
J·黄
T·罗
R·沃林福德
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8867—Grading and classifying of flaws using sequentially two or more inspection runs, e.g. coarse and fine, or detecting then analysing
    • G01N2021/887—Grading and classifying of flaws using sequentially two or more inspection runs, e.g. coarse and fine, or detecting then analysing the measurements made in two or more directions, angles, positions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Processing (AREA)
  • Image Analysis (AREA)
CN201310410071.4A 2009-01-26 2010-01-22 用于检测晶片上的缺陷的系统和方法 Active CN103531497B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/359,476 2009-01-26
US12/359,476 US8223327B2 (en) 2009-01-26 2009-01-26 Systems and methods for detecting defects on a wafer
CN2010800056350A CN102292805B (zh) 2009-01-26 2010-01-22 用于检测晶片上的缺陷的系统和方法

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CN103531497A CN103531497A (zh) 2014-01-22
CN103531497B true CN103531497B (zh) 2017-01-11

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CN2010800056350A Active CN102292805B (zh) 2009-01-26 2010-01-22 用于检测晶片上的缺陷的系统和方法

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US (4) US8223327B2 (enExample)
EP (1) EP2389685A4 (enExample)
JP (5) JP5719782B2 (enExample)
KR (2) KR101700319B1 (enExample)
CN (2) CN103531497B (enExample)
IL (4) IL213490A (enExample)
WO (1) WO2010085679A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10509214B2 (en) 2015-12-11 2019-12-17 Soitec Method for detecting defects and associated device

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
WO2010014609A2 (en) 2008-07-28 2010-02-04 Kla-Tencor Corporation Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer
US8169613B1 (en) * 2008-11-21 2012-05-01 Kla-Tencor Corp. Segmented polarizer for optimizing performance of a surface inspection system
US8223327B2 (en) 2009-01-26 2012-07-17 Kla-Tencor Corp. Systems and methods for detecting defects on a wafer
US8605275B2 (en) * 2009-01-26 2013-12-10 Kla-Tencor Corp. Detecting defects on a wafer
US10324046B1 (en) * 2009-06-03 2019-06-18 Kla-Tencor Corp. Methods and systems for monitoring a non-defect related characteristic of a patterned wafer
US9360863B2 (en) * 2010-06-30 2016-06-07 Kla-Tencor Corp. Data perturbation for wafer inspection or metrology setup using a model of a difference
CN102023168B (zh) * 2010-11-08 2013-04-17 北京大学深圳研究生院 半导体晶圆表面的芯片检测方法及系统
KR101908749B1 (ko) 2010-12-16 2018-10-16 케이엘에이-텐코 코포레이션 웨이퍼 검사
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
US9279774B2 (en) * 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
US9239295B2 (en) 2012-04-09 2016-01-19 Kla-Tencor Corp. Variable polarization wafer inspection
CN102768969B (zh) * 2012-07-03 2015-01-07 上海华力微电子有限公司 一种亮场缺陷扫描中的光斑抑制方法
FR2994734B1 (fr) * 2012-08-21 2017-08-25 Fogale Nanotech Dispositif et procede pour faire des mesures dimensionnelles sur des objets multi-couches tels que des wafers.
US9355440B1 (en) 2012-10-10 2016-05-31 Kla-Tencor Corp. Detection of selected defects in relatively noisy inspection data
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9053527B2 (en) * 2013-01-02 2015-06-09 Kla-Tencor Corp. Detecting defects on a wafer
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
KR20140091916A (ko) * 2013-01-14 2014-07-23 삼성디스플레이 주식회사 디스플레이 패널 검사방법
US9092846B2 (en) 2013-02-01 2015-07-28 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific and multi-channel information
US9222895B2 (en) 2013-02-25 2015-12-29 Kla-Tencor Corp. Generalized virtual inspector
US9619876B2 (en) * 2013-03-12 2017-04-11 Kla-Tencor Corp. Detecting defects on wafers based on 2D scatter plots of values determined for output generated using different optics modes
US9008410B2 (en) 2013-03-13 2015-04-14 Kla-Tencor Corporation Single die inspection on a dark field inspection tool
HUE056308T2 (hu) * 2013-03-19 2022-02-28 Hennecke Systems Gmbh Eljárás és rendszer sík félvezetõ tárgyak ellenõrzéséhez
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) * 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
US9747670B2 (en) * 2013-06-26 2017-08-29 Kla-Tencor Corporation Method and system for improving wafer surface inspection sensitivity
US9442077B2 (en) 2013-08-28 2016-09-13 Kla-Tencor Corp. Scratch filter for wafer inspection
JP6295396B2 (ja) * 2013-12-13 2018-03-20 パルステック工業株式会社 光学観察装置、光学観察方法、標本観察画像の画像処理プログラム
US9816939B2 (en) * 2014-07-22 2017-11-14 Kla-Tencor Corp. Virtual inspection systems with multiple modes
US9766187B2 (en) 2014-08-27 2017-09-19 Kla-Tencor Corp. Repeater detection
US9766186B2 (en) 2014-08-27 2017-09-19 Kla-Tencor Corp. Array mode repeater detection
US9582869B2 (en) * 2014-10-19 2017-02-28 Kla-Tencor Corp. Dynamic binning for diversification and defect discovery
US10267746B2 (en) * 2014-10-22 2019-04-23 Kla-Tencor Corp. Automated pattern fidelity measurement plan generation
US9599573B2 (en) * 2014-12-02 2017-03-21 Kla-Tencor Corporation Inspection systems and techniques with enhanced detection
JP2018504577A (ja) * 2014-12-22 2018-02-15 カリフォルニア インスティチュート オブ テクノロジー 厚膜サンプル用落射照明フーリエタイコグラフィ撮像
US9835566B2 (en) * 2015-03-03 2017-12-05 Kla-Tencor Corp. Adaptive nuisance filter
US9747520B2 (en) * 2015-03-16 2017-08-29 Kla-Tencor Corporation Systems and methods for enhancing inspection sensitivity of an inspection tool
CN108475422B (zh) * 2015-08-12 2019-09-06 科磊股份有限公司 在电子束图像中确定缺陷的位置
US10359371B2 (en) 2015-08-24 2019-07-23 Kla-Tencor Corp. Determining one or more characteristics of a pattern of interest on a specimen
JP2017049974A (ja) * 2015-09-04 2017-03-09 キヤノン株式会社 識別器生成装置、良否判定方法、およびプログラム
US10062156B2 (en) * 2016-02-25 2018-08-28 Kla-Tencor Corporation Method and system for detecting defects on a substrate
US9940705B2 (en) * 2016-05-04 2018-04-10 Kla-Tencor Corporation System, method and computer program product for detecting defects in a fabricated target component using consistent modulation for the target and reference components
US11010886B2 (en) 2016-05-17 2021-05-18 Kla-Tencor Corporation Systems and methods for automatic correction of drift between inspection and design for massive pattern searching
US10192302B2 (en) * 2016-05-25 2019-01-29 Kla-Tencor Corporation Combined patch and design-based defect detection
US10304177B2 (en) 2016-06-29 2019-05-28 Kla-Tencor Corporation Systems and methods of using z-layer context in logic and hot spot inspection for sensitivity improvement and nuisance suppression
JP6640057B2 (ja) * 2016-09-14 2020-02-05 株式会社日立ハイテクノロジーズ 電子顕微鏡装置及びそれを用いた傾斜ホールの測定方法
US10115040B2 (en) 2016-09-14 2018-10-30 Kla-Tencor Corporation Convolutional neural network-based mode selection and defect classification for image fusion
US10739275B2 (en) * 2016-09-15 2020-08-11 Kla-Tencor Corporation Simultaneous multi-directional laser wafer inspection
JP6924261B2 (ja) * 2016-10-20 2021-08-25 ケーエルエー コーポレイション パターニングされたウェハの特性評価のためのハイブリッド計量
WO2018176370A1 (zh) * 2017-03-31 2018-10-04 深圳配天智能技术研究院有限公司 一种视觉检测系统及方法
US10957033B2 (en) * 2017-07-10 2021-03-23 Kla-Tencor Corporation Repeater defect detection
US10620135B2 (en) * 2017-07-19 2020-04-14 Kla-Tencor Corp. Identifying a source of nuisance defects on a wafer
US10699926B2 (en) * 2017-08-30 2020-06-30 Kla-Tencor Corp. Identifying nuisances and defects of interest in defects detected on a wafer
US10964016B2 (en) * 2018-03-13 2021-03-30 Kla-Tencor Corporation Combining simulation and optical microscopy to determine inspection mode
JP6708695B2 (ja) * 2018-04-20 2020-06-10 ファナック株式会社 検査装置
CN108827971A (zh) * 2018-04-26 2018-11-16 深圳市创科自动化控制技术有限公司 一种表面缺陷检测方法
CN110658196B (zh) * 2018-06-29 2022-07-08 上海微电子装备（集团）股份有限公司 一种缺陷检测装置及缺陷检测方法
CN109065468B (zh) * 2018-09-12 2020-12-04 上海华力微电子有限公司 缺陷过滤系统及过滤方法和计算机存储介质
KR102175286B1 (ko) * 2018-10-11 2020-11-06 라온피플 주식회사 결함 검출 장치 및 방법
WO2020078660A1 (en) * 2018-10-19 2020-04-23 Asml Netherlands B.V. System and method for aligning electron beams in multi-beam inspection apparatus
US10801968B2 (en) * 2018-10-26 2020-10-13 Kla-Tencor Corporation Algorithm selector based on image frames
CN109545700B (zh) * 2018-11-30 2020-07-31 上海华力微电子有限公司 晶圆缺陷扫描方法
US11010885B2 (en) * 2018-12-18 2021-05-18 Kla Corporation Optical-mode selection for multi-mode semiconductor inspection
US11138722B2 (en) * 2018-12-21 2021-10-05 Kla-Tencor Corporation Differential imaging for single-path optical wafer inspection
CN111344554A (zh) * 2018-12-26 2020-06-26 合刃科技（深圳）有限公司 外观缺陷检测方法及装置
US11815470B2 (en) * 2019-01-17 2023-11-14 Applied Materials Israel, Ltd. Multi-perspective wafer analysis
US10902582B2 (en) 2019-01-17 2021-01-26 Applied Materials Israel, Ltd. Computerized system and method for obtaining information about a region of an object
JP7299728B2 (ja) * 2019-03-22 2023-06-28 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
US11114324B2 (en) * 2019-04-10 2021-09-07 KLA Corp. Defect candidate generation for inspection
CN110132996A (zh) * 2019-06-06 2019-08-16 德淮半导体有限公司 缺陷检测装置及其检测方法
CN110412035A (zh) * 2019-06-13 2019-11-05 合刃科技（武汉）有限公司 一种高反光材料表面检测方法及系统
CN110441315B (zh) * 2019-08-02 2022-08-05 英特尔产品（成都）有限公司 电子部件测试设备和方法
US11255748B2 (en) 2019-08-15 2022-02-22 Pratt & Whitney Canada Corp. Methods and systems for measurement of components
US11410292B2 (en) 2019-09-27 2022-08-09 Kla Corporation Equi-probability defect detection
US11557031B2 (en) 2019-11-21 2023-01-17 Kla Corporation Integrated multi-tool reticle inspection
US11803119B2 (en) 2019-12-31 2023-10-31 Asml Holding N.V. Contaminant detection metrology system, lithographic apparatus, and methods thereof
CN111272773B (zh) * 2019-12-31 2021-10-29 浙江大学 一种半导体晶圆表面缺陷的快速超高分辨检测系统
US11035803B1 (en) 2020-02-26 2021-06-15 Applied Materials Israel Ltd. Multi-perspective examination of a specimen
US11949448B2 (en) 2020-03-02 2024-04-02 Nec Corporation Submarine optical communication system and communication method
CN111693546A (zh) * 2020-06-16 2020-09-22 湖南大学 缺陷检测系统、方法及图像采集系统
US11710227B2 (en) * 2020-06-19 2023-07-25 Kla Corporation Design-to-wafer image correlation by combining information from multiple collection channels
WO2022051551A1 (en) * 2020-09-02 2022-03-10 Applied Materials Israel Ltd. Multi-perspective wafer analysis
US11798828B2 (en) * 2020-09-04 2023-10-24 Kla Corporation Binning-enhanced defect detection method for three-dimensional wafer structures
US11748871B2 (en) 2020-09-28 2023-09-05 KLA Corp. Alignment of a specimen for inspection and other processes
CN112240887A (zh) * 2020-12-14 2021-01-19 惠州高视科技有限公司 电池外观缺陷检测系统和方法
US12163970B2 (en) 2022-05-13 2024-12-10 Rtx Corporation System and method for inspecting a component for anomalous regions
US12222659B2 (en) 2023-01-18 2025-02-11 Applied Materials, Inc. Metrology system for packaging applications
JP2024136596A (ja) * 2023-03-24 2024-10-04 株式会社Ｊｖｃケンウッド 測距装置および測距方法
KR102738978B1 (ko) * 2023-12-27 2024-12-05 율촌화학 주식회사 Led와 레이저를 활용한 검사 장치 및 그 제어 방법

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202633A (ja) * 1983-04-30 1984-11-16 Mitsubishi Electric Corp パタ−ン検査装置
JPH068789B2 (ja) * 1984-12-07 1994-02-02 株式会社日立製作所 ウエハ検査装置
JP2665785B2 (ja) * 1988-12-07 1997-10-22 東京エレクトロン株式会社 検査装置
US20040057044A1 (en) 1994-12-08 2004-03-25 Mehrdad Nikoonahad Scanning system for inspecting anamolies on surfaces
JPH11237344A (ja) * 1998-02-19 1999-08-31 Hitachi Ltd 欠陥検査方法およびその装置
US6256093B1 (en) 1998-06-25 2001-07-03 Applied Materials, Inc. On-the-fly automatic defect classification for substrates using signal attributes
US6366352B1 (en) 1999-06-10 2002-04-02 Applied Materials, Inc. Optical inspection method and apparatus utilizing a variable angle design
US6268093B1 (en) 1999-10-13 2001-07-31 Applied Materials, Inc. Method for reticle inspection using aerial imaging
JP2001168158A (ja) 1999-12-03 2001-06-22 Nec Corp 光学的パターン検査装置
JP2001235428A (ja) 2000-02-23 2001-08-31 Nikon Corp 外観検査装置
JP4418078B2 (ja) * 2000-04-03 2010-02-17 株式会社トプコン 表面検査装置
JP4649051B2 (ja) * 2001-03-21 2011-03-09 オリンパス株式会社 検査画面の表示方法及び基板検査システム
JP2002303586A (ja) 2001-04-03 2002-10-18 Hitachi Ltd 欠陥検査方法及び欠陥検査装置
JP2002365027A (ja) * 2001-06-07 2002-12-18 Japan Science & Technology Corp 表面観察装置
US6781687B2 (en) 2002-09-26 2004-08-24 Orbotech Ltd. Illumination and image acquisition system
JP4489777B2 (ja) * 2003-06-10 2010-06-23 ケーエルエー−テンコール コーポレイション マルチチャネルデータのグラフィック表現を用いて基板の表面において生じる欠陥を分類するための方法及びシステム
JP4523310B2 (ja) 2003-08-25 2010-08-11 株式会社日立国際電気 異物識別方法及び異物識別装置
WO2005073807A1 (en) 2004-01-29 2005-08-11 Kla-Tencor Technologies Corporation Computer-implemented methods for detecting defects in reticle design data
RU2305320C2 (ru) 2004-07-02 2007-08-27 Алексей Александрович Бендицкий Способ формирования матричного изображения объекта
JP2006220644A (ja) 2005-01-14 2006-08-24 Hitachi High-Technologies Corp パターン検査方法及びその装置
JP4625716B2 (ja) * 2005-05-23 2011-02-02 株式会社日立ハイテクノロジーズ 欠陥検査装置及び欠陥検査方法
CN101258387A (zh) 2005-07-05 2008-09-03 马特森技术公司 确定半导体晶片的光学属性的方法与系统
WO2007012821A1 (en) * 2005-07-27 2007-02-01 Ingenia Technology Limited Verification of the signature of an article created from signals obtained from scatter of coherent optical radiation from the surface of the article
JP4778755B2 (ja) * 2005-09-09 2011-09-21 株式会社日立ハイテクノロジーズ 欠陥検査方法及びこれを用いた装置
US7659975B1 (en) 2005-09-21 2010-02-09 Kla-Tencor Technologies Corp. Methods and systems for inspection of a wafer or setting up an inspection process
US7554656B2 (en) * 2005-10-06 2009-06-30 Kla-Tencor Technologies Corp. Methods and systems for inspection of a wafer
US7747062B2 (en) * 2005-11-09 2010-06-29 Kla-Tencor Technologies Corp. Methods, defect review tools, and systems for locating a defect in a defect review process
US8041103B2 (en) * 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
JP4723362B2 (ja) 2005-11-29 2011-07-13 株式会社日立ハイテクノロジーズ 光学式検査装置及びその方法
EP1982160A4 (en) 2006-02-09 2016-02-17 Kla Tencor Tech Corp METHOD AND SYSTEMS FOR DETERMINING A WAFER FEATURE
US7589869B2 (en) * 2006-04-28 2009-09-15 Electro Scientific Industries, Inc. Adjusting image quality using multi-wavelength light
JP4939843B2 (ja) * 2006-06-07 2012-05-30 株式会社日立ハイテクノロジーズ 欠陥検査方法及びその装置
JP5132982B2 (ja) * 2007-05-02 2013-01-30 株式会社日立ハイテクノロジーズ パターン欠陥検査装置および方法
US8126255B2 (en) * 2007-09-20 2012-02-28 Kla-Tencor Corp. Systems and methods for creating persistent data for a wafer and for using persistent data for inspection-related functions
JP4573308B2 (ja) 2008-04-03 2010-11-04 芝浦メカトロニクス株式会社 表面検査装置及び方法
US8223327B2 (en) * 2009-01-26 2012-07-17 Kla-Tencor Corp. Systems and methods for detecting defects on a wafer
JP2011053085A (ja) 2009-09-02 2011-03-17 Sumco Corp ウェーハ表面のｌｐｄ検出方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10509214B2 (en) 2015-12-11 2019-12-17 Soitec Method for detecting defects and associated device

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