CN103503123A - In-line heat treatment device - Google Patents
In-line heat treatment device Download PDFInfo
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- CN103503123A CN103503123A CN201280020758.0A CN201280020758A CN103503123A CN 103503123 A CN103503123 A CN 103503123A CN 201280020758 A CN201280020758 A CN 201280020758A CN 103503123 A CN103503123 A CN 103503123A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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Abstract
Disclosed is an in-line heat treatment device. The in-line heat treatment device according to the present invention has a plurality of heaters which are respectively installed in a plurality of furnaces, wherein each of the plurality of the heaters is controlled independently. Thus, since the temperature of each furnace and the temperature difference between mutually neighboring furnaces linearly change by forming a slow grade along the transferring direction of a substrate, there are no concerns regarding damage which may be caused by thermal shocks or thermal stress. Furthermore, the in-line heat treatment device according to the present invention enables the substrate to be lifted up when being transferred such that there is no friction between the substrate and components for transferring the substrate. Thus, since the generation of particles caused by the friction is prevented, there is no damage to the substrate due to the particles. In addition, the in-line treatment device according to the present invention prevents the components for transferring the substrate from being worn out by friction, thereby precisely transferring the substrate. Therefore, there are no errors during a heat treatment process for the substrate. Consequently, according to the present invention, productivity and reliability of the heat treatment process for the substrate are improved.
Description
Technical field
The present invention relates to a kind of tandem annealing device that can improve productivity ratio and the reliability of Technology for Heating Processing.
Background technology
The annealing device used while manufacturing panel display apparatus is for the characteristic of improving the film deposited on substrate, deposited film to be carried out the annealing device of crystallization or phase change.
The thin-film transistor as semiconductor layer for panel display apparatus, utilize precipitation equipment deposited amorphous (Amorphous) silicon on the substrates such as glass or quartz, and, after amorphous silicon layer is carried out to the dehydrogenation processing, inject the alloys such as arsenic (Arsenic), phosphorus (Phosphorus) or boron (Boron) that are used to form passage.Then, implement crystallization process, the polysilicon layer that the amorphous silicon layer crystallization that will have low electron mobility of take is crystal structure with high electron mobility.In order to be polysilicon layer by the amorphous silicon layer crystallization, need to apply heat energy to amorphous silicon layer.
Heat the common method of amorphous silicon layer, substrate is put into to the inside of heating furnace (Furnace), utilize the heater meanses such as heater that are arranged on inside heating furnace to heat amorphous silicon layer.
Usually, annealing device utilizes a heating furnace to carry out the Technology for Heating Processing of heating and cooling substrate.Yet, utilize the annealing device of a heating furnace to come heated substrates to take for a long time, thereby have the shortcoming that reduces productivity ratio.
In order to make up shortcoming as above, application configures a plurality of heating furnaces continuously and substrate is transplanted on respectively successively to the tandem annealing device that carries out processing substrate in described heating furnace.
In each heating furnace of existing tandem annealing device, as the heating arrangements for heated substrates, use tabular heater.Described tabular heater is difficult to by the Region control temperature, so as shown in Figure 1, and heating furnace 11,13 adjacent one another are; 13,15; 15,17; 17, the temperature difference between 19 sharply changes in peak state.Like this, because thermal shock (Thermal Shock) or thermal stress (Thermal Stress) substrate likely are damaged, thereby there are the productivity ratio that reduces Technology for Heating Processing and the shortcoming of reliability.
In addition, the roller that the utilization of existing tandem annealing device rotatably arranges is transferred substrate.Specifically, a plurality of rollers rotatably are set respectively in each heating furnace, and substrate directly carries on described roller, or take substrate holder and carry on described roller as carrier, if described substrate is transferred in the rotation of described roller.Like this, due to the frictional force acted between the described roller contacting with each other and described substrate or the frictional force that acts between described roller and described substrate holder, described roller and described substrate or described roller and described substrate holder are scratched and produce particulate (Particle).Its result, described particulate may be attached on described substrate and damage described substrate, and this also reduces productivity ratio and the reliability of Technology for Heating Processing.
In addition, in existing tandem annealing device, the wear rate that is arranged on a plurality of described rollers in each heating furnace is different respectively, so the diameter generation deviation of described each roller while using for a long time.Like this, the screen that described each roller is transferred described substrate produces deviation, thereby described substrate breaks away from the handover path when being transferred.Error etc., occur and reduce the productivity ratio of Technology for Heating Processing and the shortcoming of reliability in its result while having Technology for Heating Processing.
Summary of the invention
Technical problem to be solved
The present invention is the problem in order to solve prior art as above and proposing, the object of the invention is to, thereby a kind of tandem annealing device that makes continuously the temperature generation linear change of a plurality of heating furnaces of configuration can improve productivity ratio and the reliability of Technology for Heating Processing is provided.
Another object of the present invention is to, provide a kind of and transferred to avoid producing particulate (Particle) by lifting substrate or substrate holder, thereby can improve the tandem annealing device of productivity ratio and the reliability of Technology for Heating Processing.
The method of dealing with problems
The tandem annealing device related to for the present invention who realizes described purpose comprises: a plurality of heating furnaces (Furnace), and configuration, provide respectively the space that substrate is heat-treated continuously; Transfer mechanism, be arranged on the inside of each described heating furnace, for transferring described substrate; And heater, in the inside of each described heating furnace, a plurality of described heaters being set respectively independently, it is controlled respectively independently, for heating described substrate.
In addition, the tandem annealing device the present invention relates to comprises: a plurality of heating furnaces (Furnace), and configuration continuously, and the space that substrate is heat-treated is provided respectively; Heater, respectively the internal independence of described each heating furnace a plurality of described heaters are set, be controlled independently respectively, for heating described substrate; And transfer mechanism, be arranged on the inside of described each heating furnace, carry the described substrate that supporting is put into, lift the described substrate carried and be transplanted in another adjacent described heating furnace.
The invention effect
The tandem annealing device the present invention relates to is respectively arranged with a plurality of heaters in a plurality of heating furnaces, and controls independently a plurality of heaters.Therefore, the temperature difference between the temperature of each heating furnace and heating furnace adjacent one another are, along the transfer direction of substrate with the linear change of gradient generation slowly, thereby do not deposit the risk that thermal shock or thermal stress cause substrate damage.Therefore, there is the productivity ratio of raising Technology for Heating Processing and the effect of reliability.
In addition, the tandem annealing device the present invention relates to, substrate is lifted handover by transfer mechanism.Its result, substrate and for not rubbing between the assembly of transferring substrate, thus can prevent from producing particulate (Particle) because of friction.Therefore, the substrate damage that does not exist particulate to cause, have the productivity ratio that can improve Technology for Heating Processing and the effect of reliability.
In addition, the tandem annealing device the present invention relates to, can not wear and tear because of friction for the assembly of transferring substrate, thereby can transfer exactly substrate.Therefore, error etc. can not occur during the heat treatment substrate, have the productivity ratio that can improve Technology for Heating Processing and the effect of reliability.
The accompanying drawing explanation
Fig. 1 is the schematic diagram of the variations in temperature of existing tandem annealing device.
Fig. 2 is the front view of the schematic configuration of the tandem annealing device that relates to of one embodiment of the invention.
Fig. 3 is the enlarged drawing of the heating furnace of the intensification unit shown in Fig. 2.
Fig. 4 is the end view of Fig. 3.
Fig. 5 is the schematic diagram of the variations in temperature of the tandem annealing device that relates to of one embodiment of the invention.
Fig. 6 is the stereogram of the transfer mechanism shown in Fig. 3 and Fig. 4.
Fig. 7 to Figure 15 is the stereogram of the action of the transfer mechanism shown in Fig. 6.
Embodiment
Below, with reference to accompanying drawing with can implement specific embodiments of the invention and describe the present invention in detail.In order to enable those skilled in the art to abundant enforcement, describe these embodiment in detail.Be interpreted as, various embodiment of the present invention differ from one another, but mutually do not repel.For example, concrete shape, concrete structure and the characteristic of the embodiment that put down in writing here, without departing from the spirit and scope of the present invention, also can be realized by other embodiment.In addition, it will be appreciated that for, position or the configuration of the indivedual inscapes in disclosed embodiment separately, also can changed without departing from the spirit and scope of the present invention.Therefore, the meaning of detailed description described later indefinite, explain in precise term, and the content that protection scope of the present invention is only put down in writing with claims is as the criterion, and comprises all scopes that the content advocated with its claim is equal to.For simplicity, also likely show turgidly length, area, thickness and the form of embodiment shown in the drawings.
Below, the tandem annealing device that the embodiment that present invention will be described in detail with reference to the accompanying relates to.
Fig. 2 is the front view that the schematic configuration of the tandem annealing device that one embodiment of the invention relate to is shown.
As shown in the figure, the tandem annealing device that the present embodiment relates to comprises loading unit 100, intensification unit 200, technique unit 300, cooling unit 400 and unloading unit 500, according to the order of loading unit 100, intensification unit 200, technique unit 300, cooling unit 400 and unloading unit 500, configures continuously.
Loading unit 100 comprises heating furnace (Furnace) 110, in the inside of heating furnace 110, is provided with transfer mechanism, and this transfer mechanism supporting substrates 50 also is transferred to the heating furnace 210 of adjacent intensification unit 200.
About described transfer mechanism, narration later.
With reference to Fig. 2 to Fig. 4, intensification unit 200 is described.Fig. 3 is the enlarged drawing of the heating furnace of the intensification unit shown in Fig. 2, and Fig. 4 is the end view of Fig. 3.
As shown in the figure, intensification unit 200 is heated to substrate 50 to be transplanted on technique unit 300 after set point of temperature.Intensification unit 200 comprises at least two heating furnaces 210,250,270 that can independently control temperature.The quantity of the heating furnace 210,250,270 of intensification unit 200, consider the temperature of heat treatment substrate 50 and suitably select.
For example, if when the heat treatment temperature of substrate 50 is about 600 ℃, the heating furnace 210,250,270 of three intensification unit 200 is set.And, the temperature of first heating furnace 210, the preheat temperature of consideration loading unit 100, preferably keep 150 ℃ of left and right, and the temperature of second heating furnace 250 and the 3rd heating furnace 270 keeps respectively 450 ℃ of left and right and 600 ℃ of left and right.
Also can prevent distortion even substrate 50 improves fast heating-up temperature when low temperature, likely be out of shape but improve fast heating-up temperature when high temperature.Therefore, preferably, the heating furnace 210,250,270 of intensification unit 200 is set as, and improves fast heating-up temperature when low temperature, and improve gradually heating-up temperature when high temperature.
Inside at first heating furnace 210 of intensification unit 200 is provided with, and for transferring the transfer mechanism of substrate 50, and a plurality of difference arranges independently and for the heater 213 of the tubulose of heated substrates 50.
The structure of first heating furnace 210 of intensification unit 200 is identical or similar with the structure of second and the 3rd heating furnace 250,270.And as mentioned above, the heater 213 arranged in first heating furnace 210 of intensification unit 200 and described transfer mechanism also can arrange at loading unit 100.
The substrate 50 that cooling unit 400 will move to from technique unit 300 is transplanted on unloading unit 500 after being cooled to set point of temperature.Cooling unit 400 comprises at least two heating furnaces 410,430 that can independently control temperature, and the quantity of the heating furnace 410,430 of cooling unit 400 is considered the temperature of heat treatment substrate 50 and suitably selected.The structure of the heating furnace 410,430 of cooling unit 400 is also identical or similar with the structure of the heating furnace 210 of intensification unit 200.Now, at cooling unit 400, can be provided with for the various cooling bodies of cooling base 50 equably.
Unloading unit 500 comprises heating furnace 510, and is configured to identical or similar with loading unit 100.In order to prevent from being transplanted on substrate 50 distortion of unloading unit 500, after being cooled to equably for example below 100 ℃, be transplanted on next technique.Now, can be provided with the heater (not shown) of upper surface that can heated substrates 50 at unloading unit 500, with heated substrates 50 equably.The substrate 50 that is transplanted on unloading unit 500 is discharged to outside by described robotic arm etc.
, there is the not difference of wounded substrate 50 degree in the temperature of each heating furnace 110,210,250,270,310,410,420,510 that the present embodiment relates to.And, heating furnace 110,210 adjacent one another are; 210,250; 250,270; 270,310; 310,410; 410,420; 420, there is temperature difference between 510.Yet, if heating furnace adjacent one another are 110,210; 210,250; 250,270; 270,310; 310,410; 410,420; 420, the temperature difference between 510 sharply changes, and has the impaired risk of substrate 50.
The tandem annealing device that the present embodiment relates to is configured to, heating furnace 110,210 adjacent one another are; 210,250; 250,270; 270,310; 310,410; 410,420; 420, the temperature difference between 510 is with the linear change of gradient generation slowly.
The heating furnace 210 of intensification unit 200 of take describes as example.
A plurality of heaters 213 that independently are arranged in heating furnace 210 are independently controlled respectively.Now, heater 213 is controlled as, the mode linear change that makes the temperature of heating furnace 210 increase gradually with the transfer direction along substrate 50.
And the described heater of the described heater of loading unit 100 and heating furnace 250,270 is also controlled with heater 213 same form of heating furnace 210.Like this, from loading unit 100 to intensification unit 200, the form linear change that temperature rises gradually along the transfer direction of substrate 50.
And, at technique unit 300, the described heater of technique unit 300 is independent control respectively, makes the heat treatment temperature of substrate 50 constant.
The described heater of cooling unit 400 and the described heater of unloading unit 500 are controlled as, the form generation linear change that makes cooling unit 400 and unloading unit 500 temperature descend gradually along the transfer direction of substrate 50.
Like this, as shown in Figure 5, heating furnace 110,210 adjacent one another are; 210,250; 250,270); 270,310; 310,410; 410,420; 420, the temperature difference between 510 is with the linear change of gradient generation slowly, thereby prevents that substrate 50 from damaging because of thermal shock or thermal stress.Therefore, improve productivity ratio and the reliability of Technology for Heating Processing.
The described transfer mechanism of the tandem annealing device that the present embodiment relates to, lift substrate 50 be transplanted in another adjacent heating furnace.Like this, between described transfer mechanism and described substrate 50, or can not produce any frictional force between described transfer mechanism and described substrate holder, so described transfer mechanism and substrate 50 can not produce the particulate (Particle) that the wearing and tearing of wearing and tearing or described transfer mechanism and described substrate holder cause.
With reference to Fig. 3, Fig. 4 and Fig. 6, described transfer mechanism is described.Fig. 6 is the stereogram of transfer mechanism shown in Fig. 3 and Fig. 4.
Below, the mode that the direct lift-launch of substrate 50 of take is transferred on described transfer mechanism is described transfer mechanism as example illustrates.
As shown in the figure, described transfer mechanism comprises take-off plate 220 and supporting member 230.
Take-off plate 220 forms square, configures abreast with the transfer direction of substrate 50, and is arranged to, and when can vertically carry out elevating movement with the transfer direction of substrate 50, can carry out abreast forward travel or setback with the transfer direction of substrate 50.Be provided with a plurality of supporting members 230, its bottom is across prescribed distance and take-off plate 220 combinations, at upper end supporting substrates 50.Supporting member 230 together moves with take-off plate 220.
More particularly, take-off plate 220 comprises: a plurality of the first take-off plate 221 configure with the transfer direction with substrate 50 abreast across spacing each other; A plurality of the second take-off plate 225, and the transfer direction of substrate 50 is configured between the first take-off plate 221 and the first take-off plate 221 adjacent one another are abreast.
The first take-off plate 221 risen → advanced → decline → setback and transfer substrate 50, the second take-off plate 225 and also risen → advance → decline → setback and transfer substrate 50.Now, the first take-off plate 221 and the second take-off plate 225 self-movements.And a plurality of the first take-off plate 221 are carried out same movement, a plurality of the second take-off plate 225 are carried out same movement.For this reason, a plurality of the first take-off plate 221 are linked into an integrated entity by connecting elements 222, and a plurality of the second take-off plate 225 are linked into an integrated entity by connecting elements 226.
Supporting member 230 has: a plurality of the first supporting members 231 are separately positioned on the first take-off plate 221; A plurality of the second supporting members 235, be separately positioned on the second take-off plate 225.And the first and second supporting members 231,235 have respectively: a pair of the first and second vertical rod 231a, 235a, its bottom is incorporated into respectively the first and second take-off plate 221,225; The first and second horizon bar 231b, 235b, form with the upper end of the first and second vertical rod 231a, 235a respectively, for carrying and supporting substrates 50.
Because substrate 50 contacts with the first and second horizon bar 231b, 235b, so preferably at the face of the first and second horizon bar 231b, the 235b that contact with substrate 50, implement rounding.Like this, prevent that substrate 50 from scratching because of the first and second horizon bar 231b, 235b.
And the first and second supporting members 231,235, between heater adjacent one another are 213 and heater 213, carry out forward travel or setback in the spacing between heater adjacent one another are 213 and heater 213.
At the unaccounted Reference numeral 241,243,245 and 247 shown in Fig. 3 and Fig. 4, are cylinders.Cylinder 241,243 is respectively used to make the first and second take-off plate 221,225 to carry out elevating movement, and cylinder 245,247 is respectively used to make the first and second take-off plate 221,225 to carry out forward travel or setback.Now, the bottom contact of cylinder 241,243 is supported on the bottom surface of heating furnace 210, thereby difference lifting the first and second take-off plate 221,225 when making cylinder 241,243 together carry out forward travel or setback with the first and second take-off plate 221,225 respectively, the bottom contact of cylinder 245,247 is supported on the side of heating furnace 210, thereby makes respectively the first and second take-off plate 221,225 carry out forward travel or setback when making cylinder 245,247 together carry out elevating movement with the first and second take-off plate 221,225 respectively.
The motion of the first and second take-off plate 221,225, the various forms such as conveyer belt, chain or the crank enforcement that can utilize motor and transmit motor power.
With reference to Fig. 6, Fig. 7 to Figure 15, the take-off plate 220 of the described transfer mechanism that the present embodiment relates to and the action of supporting member 230 are described.Fig. 7 to Figure 15 is the stereogram that the action of the transfer mechanism shown in Fig. 6 is shown.
By as shown in Figure 6, the first and second take-off plate 221,225 are positioned at identical height, and substrate 50 carries the state be supported on the first and second supporting members 231,235 and is assumed to initial condition.
Under the state shown in Fig. 6, transfer substrate 50 if want, at first operate cylinder 241(with reference to Fig. 3 and Fig. 4) make the first take-off plate 221 increase.Like this, as shown in Figure 7, the first supporting member 231 is along with the first take-off plate 221 rises, thereby the substrate 50 supported by the first supporting member 231 also rises.
Then, operation cylinder 245(is with reference to Fig. 3) the first take-off plate 221 is advanced, as shown in Figure 8, substrate 50 also advance and to the right direction transferred.Now, the distance that the first take-off plate 221 is advanced certainly than heater 213(adjacent one another are with reference to Fig. 3) and heater 213 between spacing short.
Under the state shown in Fig. 8, operation cylinder 241 makes the first take-off plate 221 drop to bottom dead centre, and as shown in Figure 9, substrate 50 is carried and is supported on the second supporting member 235 simultaneously under the state of the first supporting member 231 supportings.If substrate 50 is mounted on the second supporting member 235, operate cylinder 243(with reference to Fig. 3), as shown in figure 10, make the second take-off plate 225 increase.
Now, as shown in figure 10, if the second take-off plate 225 rises little by little, substrate 50 only, by the second supporting member 235 supportings, operates cylinder 245 the first take-off plate 221 is retreated.Then, make the second take-off plate 225 rise to top dead-centre.Like this, in the state shown in Figure 11.
As shown in figure 10, the reason that first makes the second take-off plate 225 increase under the state that substrate 50 is supported by the first and second supporting members 231,235 simultaneously is to rub each other in order to prevent substrate 50 and the first supporting member 231 and substrate 50 and the second supporting member 235.That is,, if under the state that substrate 50 is supported by the first and second supporting members 231,235, the first take-off plate 221 retreats simultaneously, between substrate 50 and the first supporting member 231 and between substrate 50 and the second supporting member 235, produce frictional force.In order to prevent frictional force, first make after the second take-off plate 225 rises, after the first take-off plate 221 is retreated.
Under the state shown in Figure 11, if operation cylinder 247(is with reference to Fig. 3) the second take-off plate 225 is advanced, as shown in figure 12, substrate 50 also advance and to the right direction transferred.Now, the distance that the second take-off plate 225 is advanced is certainly short than the spacing between heater adjacent one another are 213 and heater 213.
Under the state shown in Figure 12, if operation cylinder 243 makes the second take-off plate 225 drop to bottom dead centre, as shown in figure 13, substrate 50 is carried and is supported on the first supporting member 231 simultaneously under the state of the second supporting member 235 supportings.If substrate 50 is equipped on the first supporting member 231, operate cylinder 241, as shown in figure 14, make the first take-off plate 221 increase.
As shown in figure 14, if the first take-off plate 221 rises little by little, and substrate 50 operates cylinder 247 the second take-off plate 225 is retreated only by the first supporting member 231 supportings.Then, make the first take-off plate 221 rise to top dead-centre.Like this, in the state shown in Figure 15.The state of Figure 15 is identical with the state of Fig. 7.
As shown in figure 14, the reason that first makes the first take-off plate 221 increase under the state that substrate 50 is supported by the first and second supporting members 231,235 simultaneously is, as mentioned above, be in order to prevent that substrate 50 and the first supporting member 231 and substrate 50 and the second supporting member 235 from rubbing each other.
Under the state shown in Figure 15, if the operation cylinder 241 the first take-off plate 221 is advanced, as shown in Figure 8, substrate 50 also advance and to the right direction transferred.
As mentioned above, by the first take-off plate 221 and the second take-off plate 225 with interactive form continuous motion, thereby transfer substrate 50.
Certainly, bottom surface is heated the bottom surface supporting of stove 210 and makes respectively the cylinder 241,243 of the first and second take-off plate 221,225 liftings also with the first and second take-off plate 221,225, together advance or retreat, and the side support that bottom surface is heated stove 210 is advanced by the first and second take-off plate 221,225 and the cylinder 245,247 that retreats also together rises with the first and second take-off plate 221,225.
At heating furnace adjacent one another are 110,210; 210,250; 250,270; 270,310; 310,410; 410,430; While 430, between 510, transferring substrate 50, be separately positioned on heating furnace adjacent one another are 110,210; 210,250; 250,270; 270,310; 310,410; 410,430; 430, described the first take-off plate in 510 is carried out identical motion, and described the second take-off plate is carried out identical motion.
The tandem annealing device that the present embodiment relates to, substrate 50 and between the assembly of transferring substrate 50 without the friction, thereby not only can prevent particulate, prevent for transferring the component wear of substrate 50.Therefore, improve productivity ratio and the reliability of Technology for Heating Processing.
The accompanying drawing of embodiments of the invention as above has omitted concrete outline line and has briefly showed, in order to easily understand and belong to technological thought of the present invention.In addition, described embodiment can not be as the standard that limits technological thought of the present invention, just as for understanding the reference item of the technical scheme that claim of the present invention comprises.
Claims (10)
1. a tandem annealing device, is characterized in that, comprising:
A plurality of heating furnaces (Furnace), configuration, provide respectively the space that substrate is heat-treated continuously;
Transfer mechanism, be arranged on the inside of described each heating furnace, for transferring described substrate; And
Heater, be provided with respectively a plurality of described heaters independently in the inside of each described heating furnace, and it is controlled respectively independently, for heating described substrate.
2. tandem annealing device according to claim 1, is characterized in that,
Temperature difference between the temperature of each described heating furnace and described heating furnace adjacent one another are, along the transfer direction generation linear change of described substrate.
3. tandem annealing device according to claim 2, is characterized in that,
Described heater forms tubulose.
4. a tandem annealing device, is characterized in that, comprising:
A plurality of heating furnaces (Furnace), configuration, provide respectively the space that substrate is heat-treated continuously;
Heater, be provided with respectively a plurality of described heaters independently in the inside of described each heating furnace, and it is controlled respectively independently, for heating described substrate; And
Transfer mechanism, be arranged on the inside of each described heating furnace, the described substrate be put into for carrying supporting, and lift the described base plate transfer that carried in another adjacent described heating furnace.
5. tandem annealing device according to claim 4, is characterized in that, described transfer mechanism comprises:
Take-off plate, when can vertically carry out elevating movement with the transfer direction with described substrate, can carry out forward travel or setback abreast with the transfer direction with described substrate; And
A plurality of supporting members, the one side is combined with described take-off plate, and opposite side supports described substrate, and together moves with described take-off plate.
6. tandem annealing device according to claim 5, is characterized in that,
Described take-off plate comprises: a plurality of the first take-off plate, each other across the spacing configuration, and risen → advance simultaneously → decline → setback; A plurality of the second take-off plate, be configured between described the first take-off plate and described the first take-off plate adjacent one another are, and risen → advance simultaneously → decline → setback;
Described the first take-off plate and described the second take-off plate are moved independently,
Described supporting member comprises: a plurality of the first supporting members are separately positioned on described the first take-off plate; A plurality of the second supporting members, be separately positioned on described the second take-off plate.
7. tandem annealing device according to claim 6, is characterized in that,
Described the first supporting member has: a pair of the first vertical rod, and the one end is incorporated on described the first take-off plate; And first horizon bar, with the other end of described the first vertical rod, form, for supporting described substrate,
Described the second supporting member has: a pair of the second vertical rod, and the one end is incorporated on described the second take-off plate; And second horizon bar, with the other end of described the second vertical rod, form, for supporting described substrate.
8. tandem annealing device according to claim 7, is characterized in that,
Described the first and second horizon bars and position described substrate contacts are subjected to rounding and process.
9. tandem annealing device according to claim 8, is characterized in that,
Described heater forms tubulose, across spacing, is configured to intersect with the transfer direction of described substrate each other,
Described the first and second supporting members, between described heater and described heater adjacent one another are, carry out forward travel or setback in described heater adjacent one another are and the interval between described heater.
10. tandem annealing device according to claim 9, is characterized in that,
While from arbitrary described heating furnace adjacent one another are to another described heating furnace, transferring described substrate, described the first take-off plate that is arranged on described the first take-off plate in arbitrary described heating furnace and is arranged in another described heating furnace is carried out identical motion, and described the second take-off plate be arranged in arbitrary described heating furnace is carried out identical motion with described the second take-off plate be arranged in another described heating furnace.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2011-0041935 | 2011-05-03 | ||
| KR1020110041935A KR20120124192A (en) | 2011-05-03 | 2011-05-03 | In-line type heat treatment apparatus and method for controlling temperature of the same |
| KR10-2011-0050943 | 2011-05-27 | ||
| KR1020110050943A KR101258629B1 (en) | 2011-05-27 | 2011-05-27 | In-line type heat treatment apparatus and method for transporting substrate of the same |
| PCT/KR2012/003408 WO2012150798A2 (en) | 2011-05-03 | 2012-05-02 | In-line heat treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103503123A true CN103503123A (en) | 2014-01-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280020758.0A Pending CN103503123A (en) | 2011-05-03 | 2012-05-02 | In-line heat treatment device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2014519187A (en) |
| CN (1) | CN103503123A (en) |
| TW (1) | TW201310498A (en) |
| WO (1) | WO2012150798A2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256841A (en) * | 2017-05-31 | 2017-10-17 | 武汉华星光电技术有限公司 | Rapid thermal annealing machine |
| CN107887308A (en) * | 2017-12-01 | 2018-04-06 | 合肥芯欣智能科技有限公司 | Full-automatic multi-functional processing equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1461726A (en) * | 2002-05-30 | 2003-12-17 | 东京毅力科创株式会社 | Fragile sheel transporting device and fragile sheet processing |
| US20080308039A1 (en) * | 2007-06-18 | 2008-12-18 | Chang-Suk Oh | Apparatus for processing a substrate |
| CN100479117C (en) * | 2004-05-12 | 2009-04-15 | 微传科技有限公司 | System for heat treatment of semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3663674B2 (en) * | 1995-05-15 | 2005-06-22 | 日本電池株式会社 | UV treatment equipment |
| JP3202929B2 (en) * | 1996-09-13 | 2001-08-27 | 東京エレクトロン株式会社 | Processing system |
| KR101015596B1 (en) * | 2005-02-28 | 2011-02-17 | 주식회사 비아트론 | Apparatus for Heat Treatment of Semiconductor Thin Film |
-
2012
- 2012-05-02 CN CN201280020758.0A patent/CN103503123A/en active Pending
- 2012-05-02 WO PCT/KR2012/003408 patent/WO2012150798A2/en active Application Filing
- 2012-05-02 TW TW101115580A patent/TW201310498A/en unknown
- 2012-05-02 JP JP2014509242A patent/JP2014519187A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1461726A (en) * | 2002-05-30 | 2003-12-17 | 东京毅力科创株式会社 | Fragile sheel transporting device and fragile sheet processing |
| CN100479117C (en) * | 2004-05-12 | 2009-04-15 | 微传科技有限公司 | System for heat treatment of semiconductor device |
| US20080308039A1 (en) * | 2007-06-18 | 2008-12-18 | Chang-Suk Oh | Apparatus for processing a substrate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256841A (en) * | 2017-05-31 | 2017-10-17 | 武汉华星光电技术有限公司 | Rapid thermal annealing machine |
| CN107256841B (en) * | 2017-05-31 | 2020-07-03 | 武汉华星光电技术有限公司 | Quick thermal annealing machine |
| CN107887308A (en) * | 2017-12-01 | 2018-04-06 | 合肥芯欣智能科技有限公司 | Full-automatic multi-functional processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014519187A (en) | 2014-08-07 |
| WO2012150798A3 (en) | 2013-03-21 |
| WO2012150798A2 (en) | 2012-11-08 |
| TW201310498A (en) | 2013-03-01 |
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