TW201310498A - In-line type heat treatment apparatus - Google Patents
In-line type heat treatment apparatus Download PDFInfo
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- TW201310498A TW201310498A TW101115580A TW101115580A TW201310498A TW 201310498 A TW201310498 A TW 201310498A TW 101115580 A TW101115580 A TW 101115580A TW 101115580 A TW101115580 A TW 101115580A TW 201310498 A TW201310498 A TW 201310498A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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Abstract
Description
本發明係有關於一種可提昇熱處理程序之生產率及可靠性之直列型熱處理裝置。 The present invention relates to an in-line heat treatment apparatus which can improve the productivity and reliability of a heat treatment process.
平板顯示裝置之製造時所使用之退火裝置係為提昇基板上所蒸鍍之膜之特性而使已蒸鍍之膜結晶或相變化之熱處理裝置。 The annealing device used in the manufacture of the flat panel display device is a heat treatment device that crystallizes or phase changes the vapor deposited film by improving the characteristics of the film deposited on the substrate.
平板顯示裝置所使用之半導體層之薄膜電晶體係於玻璃或石英等基板上，使用蒸鍍裝置蒸鍍非晶(Amorphous)矽，並就非晶矽層施予脫氫處理後，注入用於形成通道之砷(Arsenic)、磷(Phosphorus)或硼(Boron)等摻雜物。其次，則實施可使電子移動率較低之非晶矽層對電子移動率較高之結晶質構造之多晶矽層結晶之結晶程序。使非晶矽層對多晶矽層結晶，須對非晶矽層施加熱能。 The thin film electro-crystal system of the semiconductor layer used in the flat panel display device is deposited on a substrate such as glass or quartz by using a vapor deposition device to deposit an amorphous (Amorphous) crucible, and the amorphous germanium layer is subjected to dehydrogenation treatment, and then injected for Dopants such as Arsenic, Phosphorus or Boron are formed in the channel. Next, a crystallization process of a polycrystalline germanium layer crystal structure having a crystal structure having a low electron mobility and a high electron mobility is performed. The amorphous germanium layer is crystallized into the polycrystalline germanium layer, and thermal energy is applied to the amorphous germanium layer.
對非晶矽層加熱之一般方法係將基板置入加熱爐(Furnace)內部，並藉設於加熱爐內部之加熱器等加熱機構對非晶矽層加熱。 The general method of heating the amorphous germanium layer is to place the substrate inside a Furnace and heat the amorphous germanium layer by a heating mechanism such as a heater inside the heating furnace.
一般之熱處理裝置係使用單一加熱爐進行基板之加熱及冷卻之熱處理程序。然而，使用單一加熱爐之熱處理裝置在基板之熱處理時較為耗時，而有生產率不佳之缺點。 A general heat treatment apparatus is a heat treatment process for heating and cooling a substrate using a single heating furnace. However, a heat treatment apparatus using a single heating furnace is time consuming in heat treatment of a substrate, and has a disadvantage of poor productivity.
為解決前述之缺點，已開發使用連續配置有複數加熱 爐，並朝前述各加熱爐依序輸送基板而進行基板之熱處理之直列型熱處理裝置。 In order to solve the aforementioned shortcomings, it has been developed to use a continuous configuration with multiple heating An in-line heat treatment apparatus that heats the substrate by sequentially feeding the substrate to the respective heating furnaces.
習知之直列型熱處理裝置之各加熱爐係使用板狀之加熱器作為用以加熱基板之加熱機構。前述板狀之加熱器難以就各領域分別控制溫度，並如第1圖所示，彼此鄰接之加熱爐11與13、13與15、15與17、17與19之間之溫差形成波峰形態並急劇變化。如此，基板可能受熱震(Thermal Shock)或熱應力(Thermal Stress)而損傷，故有熱處理程序之生產率及可靠性不佳之缺點。 Each of the heating furnaces of the conventional in-line type heat treatment apparatus uses a plate-shaped heater as a heating means for heating the substrate. It is difficult for the above-mentioned plate-shaped heater to individually control the temperature in each field, and as shown in Fig. 1, the temperature difference between the heating furnaces 11 and 13, 13 and 15, 15 and 17, 17 and 19 adjacent to each other forms a peak shape and Change dramatically. As such, the substrate may be damaged by thermal shock or thermal stress, and thus has the disadvantages of poor productivity and reliability of the heat treatment process.
又，習知之直列型熱處理裝置係使用設成可旋轉之滾筒而輸送基板。細節則係於各加熱爐分別設置可旋轉之複數滾筒，基板則直接搭載於前述滾筒上或藉基板托座而搭載於前述滾筒上，旋轉前述滾筒即可輸送前述基板。如此，作用於彼此接觸之前述滾筒與前述基板之間之摩擦力或作用於前述滾筒與前述基板托座之間之摩擦力，將使前述滾筒與前述基板或前述滾筒與前述基板托座摩擦而產生微粒(Particle)。如此，前述微粒可能附著於前述基板上而損傷前述基板，故亦有熱處理程序之生產率及可靠性不佳之缺點。 Further, the conventional in-line type heat treatment apparatus transports a substrate by using a rotatable drum. In the detail, each of the heating furnaces is provided with a plurality of rotatable rollers, and the substrate is directly mounted on the drum or mounted on the drum by a substrate holder, and the substrate can be conveyed by rotating the drum. In this way, the friction between the roller and the substrate that are in contact with each other or the friction between the roller and the substrate holder will cause the roller to rub against the substrate or the roller and the substrate holder. Produce particles. As described above, since the fine particles may adhere to the substrate and damage the substrate, there is a disadvantage that the productivity and reliability of the heat treatment process are not good.
進而，習知之直列型熱處理裝置中，設於各加熱爐之複數之前述滾筒之磨損率個別互異，故長時間使用後，前述各滾筒之直徑將不一致。如此，將使前述各滾筒輸送前述基板之輸送速度不一致，並偏離輸送路徑而輸送前述基板。因此，將在熱處理程序時發生錯誤等，而有熱處理程 序之生產率及可靠性不佳之缺點。 Further, in the conventional in-line heat treatment apparatus, the wear rates of the plurality of rolls provided in each of the heating furnaces are different from each other, and the diameters of the respective drums do not coincide with each other after a long period of use. In this manner, the conveyance speeds of the respective substrates conveyed by the respective rollers are not uniform, and the substrates are conveyed while being displaced from the conveyance path. Therefore, an error or the like will occur during the heat treatment process, and there is a heat treatment process. The disadvantages of poor productivity and reliability.
本發明係為解決上述之習知技術之問題而設計者，本發明之目的則在提供一種可使連續配置之複數加熱爐之溫度呈線形變化，而提昇熱處理程序之生產率及可靠性之直列型熱處理裝置。 The present invention has been made to solve the above problems of the prior art, and an object of the present invention is to provide an in-line type which can increase the temperature of a plurality of furnaces continuously arranged in a linear manner and improve the productivity and reliability of the heat treatment process. Heat treatment device.
本發明之其它目的則在提供一種可上抬基板或基板托座而加以輸送以避免產生微粒(Particle)，而提昇熱處理程序之生產率及可靠性之直列型熱處理裝置。 Another object of the present invention is to provide an in-line heat treatment apparatus which can lift a substrate or a substrate holder and transport it to avoid the generation of particles, thereby improving the productivity and reliability of the heat treatment process.
為達成上述目的，本發明之直列型熱處理裝置包含有：複數加熱爐(Furnace)，係連續配置者，可分別提供基板進行熱處理之空間；輸送機構，設於前述各加熱爐之內部，可輸送前述基板；及，加熱器，分別於前述各加熱爐內部獨立設有複數個，分別獨立受控制並加熱前述基板。 In order to achieve the above object, the in-line type heat treatment apparatus of the present invention comprises: a multiple heating furnace (Furnace), which is a continuous arrangement, which can respectively provide a space for heat treatment of the substrate; and a conveying mechanism which is disposed inside the respective heating furnaces and can be transported The substrate and the heater are separately provided in plurality in each of the heating furnaces, and are independently controlled and heated to the substrate.
又，本發明之直列型熱處理裝置包含有：複數加熱爐(Furnace)，係連續配置者，可分別提供基板進行熱處理之空間；加熱器，分別於前述各加熱爐內部獨立設有複數個，分別獨立受控制並加熱前述基板；及，輸送機構，設於前述各加熱爐之內部，可搭載支持已置入之前述基板，並上抬所搭載之前述基板而輸送至鄰接之其它前述加熱爐。 Further, the in-line type heat treatment apparatus according to the present invention includes: a plurality of heating furnaces (Furnace), which are continuously arranged, and each of which can provide a space for heat treatment of the substrate; the heaters are separately provided in the plurality of furnaces, respectively The substrate is independently controlled and heated; and a transport mechanism is provided inside each of the heating furnaces, and the substrate that supports the substrate is mounted, and the mounted substrate is lifted up and transported to the adjacent heating furnace.
本發明之直列型熱處理裝置於複數之加熱爐分別設有複數之加熱器，複數之加熱器並分別獨立受控制。藉此，各加熱爐之溫度及彼此鄰接之加熱爐間之溫差將沿基板之輸送方向以徐緩之斜率呈線形變化，故基板將不致因熱震或熱應力而受損。因此，具有提昇熱處理程序之生產率及可靠性之效果。 The in-line type heat treatment device of the present invention is provided with a plurality of heaters in a plurality of heating furnaces, and a plurality of heaters are independently controlled. Thereby, the temperature difference between the heating furnaces and the heating furnaces adjacent to each other will change linearly along the conveying direction of the substrate in a gentle slope, so that the substrate will not be damaged by thermal shock or thermal stress. Therefore, it has the effect of improving the productivity and reliability of the heat treatment process.
且，本發明之直列型熱處理裝置係藉輸送機構上抬而輸送基板。藉此，將不發生基板與用於輸送基板之零件之間之摩擦，故可避免因摩擦而產生微粒(Particle)。因此，不致因微粒造成基板受損，故有提昇熱處理程序之生產率及可靠性之效果。 Moreover, the in-line type heat treatment apparatus of the present invention transports the substrate by lifting the transport mechanism. Thereby, the friction between the substrate and the member for transporting the substrate does not occur, so that generation of particles due to friction can be avoided. Therefore, the substrate is not damaged by the particles, so the productivity and reliability of the heat treatment process are improved.
進而，本發明之直列型熱處理裝置中，用於輸送基板之零件不因摩擦而磨損，故可正確地輸送基板。因此，將不致於基板之熱處理時發生錯誤等，而有提昇熱處理程序之生產率及可靠性之效果。 Further, in the in-line heat treatment apparatus of the present invention, since the components for transporting the substrate are not worn by friction, the substrate can be accurately conveyed. Therefore, there is no possibility that an error or the like occurs in the heat treatment of the substrate, and there is an effect of improving the productivity and reliability of the heat treatment process.
第1圖係顯示習知之直列型熱處理裝置之溫度變化者。 Fig. 1 shows the temperature change of a conventional in-line heat treatment apparatus.
第2圖係顯示本發明一實施形態之直列型熱處理裝置之概略構造之正面圖。 Fig. 2 is a front elevational view showing the schematic structure of an in-line heat treatment apparatus according to an embodiment of the present invention.
第3圖係第2圖所示之昇溫部之加熱爐之放大圖。 Fig. 3 is an enlarged view of the heating furnace of the temperature rising portion shown in Fig. 2.
第4圖係第3圖之側面圖。 Figure 4 is a side view of Figure 3.
第5圖係顯示本發明一實施形態之直列型熱處理裝置之溫度變化者。 Fig. 5 is a view showing changes in temperature of an in-line type heat treatment apparatus according to an embodiment of the present invention.
第6圖係第3及4圖所示之輸送機構之立體圖。 Figure 6 is a perspective view of the transport mechanism shown in Figures 3 and 4.
第7圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 7 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第8圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 8 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第9圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 9 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第10圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 10 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第11圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 11 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第12圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 12 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第13圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 13 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第14圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 14 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第15圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 15 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
以下，參照例示可實施本發明之特定實施形態之附圖而詳細說明本發明。以下將充分地詳細說明實施形態，俾熟悉本技術領域之從業人員得以實施本發明。本發明之多種實施形態雖互不相同，但須理解並非必為互斥性質。舉例言之，以下所揭露之特定形狀、特定構造及特定之特性與一實施形態相關，在未逸脫本發明之要旨及範圍之範圍內可藉其它實施形態加以實施。又，分別揭示之實施形態之個別構成要素之位置或配置亦須理解為可在未逸脫本發明之要旨及範圍之範圍內加以變更。故而，後述之詳細說明並非用於限定用途，本發明之範圍在受適當說明後，僅為與其申請專利範圍所主張者均等之全部範圍同時附加之申請專利範圍所限定。附圖所示之實施形態之長度、面積、厚度及形態，亦可能加以誇大顯示以利說明。 Hereinafter, the present invention will be described in detail with reference to the accompanying drawings, which illustrate the preferred embodiments of the invention. The embodiments are described in sufficient detail below to enable those skilled in the art to practice the invention. The various embodiments of the invention are different from each other, but it must be understood that they are not necessarily mutually exclusive. For example, the specific shapes, the specific structures, and the specific features disclosed in the following are intended to be in the form of other embodiments. In addition, the position and arrangement of the individual components of the embodiments are also to be understood as being within the scope and scope of the invention. Therefore, the detailed description is not intended to be limiting, and the scope of the present invention is defined by the scope of the appended claims. The length, area, thickness and configuration of the embodiments shown in the drawings may also be exaggerated for illustrative purposes.
以下，即參照附圖詳細說明本發明一實施形態之直列型熱處理裝置。 Hereinafter, an in-line heat treatment apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
第2圖係顯示本發明一實施形態之直列型熱處理裝置之概略構造之正面圖。 Fig. 2 is a front elevational view showing the schematic structure of an in-line heat treatment apparatus according to an embodiment of the present invention.
如圖所示，本實施形態之直列型熱處理裝置包含裝載部100、昇溫部200、程序部300、冷卻部400、卸載部500，並依序連續配置裝載部100、昇溫部200、程序部300、冷卻部400及卸載部500。 As shown in the figure, the in-line type heat treatment apparatus according to the present embodiment includes a loading unit 100, a temperature rising unit 200, a program unit 300, a cooling unit 400, and an unloading unit 500, and the loading unit 100, the temperature rising unit 200, and the program unit 300 are continuously arranged in this order. The cooling unit 400 and the unloading unit 500.
裝載部100包含加熱爐(Furnace)110，加熱爐110內部則設有可支持基板50並加以輸送至鄰接之昇溫部200之加熱爐210之輸送機構。 The loading unit 100 includes a heating furnace (Furnace) 110. Inside the heating furnace 110, a conveying mechanism capable of supporting the substrate 50 and transporting it to the heating furnace 210 adjacent to the temperature rising unit 200 is provided.
基板50則為前述輸送機構所搭載支持。即，基板50為機械臂(未圖示)所支持，再裝載於裝載部100，而為前述輸送機構所搭載支持。基板50與前述輸送機構之間亦可夾設基板托座(未圖示)。使用前述基板托座時，可在前述基板托座已搭載於前述輸送機構上之狀態下，朝前述基板托座搭載基板50，或在基板50已搭載於前述基板托座上之狀態下，朝前述輸送機構搭載前述基板托座。 The substrate 50 is supported by the above-described transport mechanism. That is, the substrate 50 is supported by a robot arm (not shown), and is mounted on the loading unit 100, and is supported by the transport mechanism. A substrate holder (not shown) may be interposed between the substrate 50 and the transport mechanism. When the substrate holder is used, the substrate 50 may be mounted on the substrate holder in a state where the substrate holder is mounted on the transport mechanism, or the substrate 50 may be mounted on the substrate holder. The substrate holder is mounted on the transport mechanism.
前述輸送機構則留待後述再予說明。 The above-described transport mechanism will be described later.
基板50在裝載部100中經均勻預熱至諸如約150℃左右後，即可加以輸送至昇溫部200。因此，可於加熱爐110設置加熱器(未圖示)。 After the substrate 50 is uniformly preheated to about 150 ° C in the loading portion 100, it can be transported to the temperature rising portion 200. Therefore, a heater (not shown) can be provided in the heating furnace 110.
就昇溫部200則參照第2圖乃至第4圖加以說明。第3圖係第2圖所示之昇溫部之加熱爐之放大圖，第4圖係第3圖之 側面圖。 The temperature rising unit 200 will be described with reference to Figs. 2 to 4 . Fig. 3 is an enlarged view of the heating furnace of the temperature rising portion shown in Fig. 2, and Fig. 4 is a third drawing. side view.
如圖所示，昇溫部200可將基板50加熱至預定溫度，再加以輸送至程序部300。昇溫部200包含溫度可獨立受控制之至少2個加熱爐210、250、270。昇溫部200之加熱爐210、250、270之個數可考量基板50之熱處理溫度而適當加以準備。 As shown in the figure, the temperature rising unit 200 can heat the substrate 50 to a predetermined temperature and then transport it to the program unit 300. The temperature rising unit 200 includes at least two heating furnaces 210, 250, and 270 whose temperature can be independently controlled. The number of the heating furnaces 210, 250, and 270 of the temperature rising unit 200 can be appropriately prepared in consideration of the heat treatment temperature of the substrate 50.
舉例言之，基板50之熱處理溫度若為約600℃，則準備3個昇溫部200之加熱爐210、250、270。因此，宜考量裝載部100之預熱溫度而將第1加熱爐210之溫度維持在150℃左右，並將第2加熱爐250及第3加熱爐270之溫度分別維持在450℃左右及600℃左右。 For example, when the heat treatment temperature of the substrate 50 is about 600 ° C, the heating furnaces 210, 250, and 270 of the three temperature rising portions 200 are prepared. Therefore, it is preferable to maintain the preheating temperature of the loading unit 100 to maintain the temperature of the first heating furnace 210 at about 150 ° C, and to maintain the temperatures of the second heating furnace 250 and the third heating furnace 270 at about 450 ° C and 600 ° C, respectively. about.
基板50即便在低溫時急速提高加熱溫度亦可避免變形，但高溫時急速提高加熱溫度則可能發生變形。因此，宜將昇溫部200之加熱爐210、250、270設成在低溫時急速提高加熱溫度，高溫時則徐緩提高加熱溫度。 The substrate 50 can be prevented from being deformed even if the heating temperature is rapidly increased at a low temperature, but deformation may occur when the heating temperature is rapidly increased at a high temperature. Therefore, it is preferable to set the heating furnaces 210, 250, and 270 of the temperature rising unit 200 to rapidly increase the heating temperature at a low temperature, and to gradually increase the heating temperature at a high temperature.
昇溫部200之第1加熱爐210內部設有用於輸送基板50之輸送機構，以及分別獨立設置而用於加熱基板50之管狀之複數加熱器213。 The first heating furnace 210 of the temperature rising unit 200 is provided with a transport mechanism for transporting the substrate 50, and a plurality of tubular heaters 213 that are separately provided for heating the substrate 50.
昇溫部200之第1加熱爐210之構造與第2及第3加熱爐250、270之構造相同或類似。其次，一如前述，設於昇溫部200之第1加熱爐210之加熱器213及前述輸送機構亦可設於裝載部100。 The structure of the first heating furnace 210 of the temperature rising unit 200 is the same as or similar to the structure of the second and third heating furnaces 250 and 270. Next, as described above, the heater 213 and the transport mechanism of the first heating furnace 210 provided in the temperature rising unit 200 may be provided in the loading unit 100.
程序部300包含加熱爐310，可在預定溫度下就自昇溫部200送入之基板50進行熱處理。程序部300之加熱爐310之 構造亦與昇溫部200之加熱爐210之構造相同或類似。 The program unit 300 includes a heating furnace 310 that performs heat treatment on the substrate 50 fed from the temperature rising unit 200 at a predetermined temperature. The heating furnace 310 of the program part 300 The configuration is also the same as or similar to that of the heating furnace 210 of the temperature rising portion 200.
冷卻部400可將自程序部300送入之基板50冷卻至預定溫度，然後加以輸送至卸載部500。冷卻部400包含溫度可獨立受控制之至少2個加熱爐410、430，冷卻部400之加熱爐410、430之個數可考量基板50之熱處理溫度而準備適當數量。冷卻部400之加熱爐410、430之構造亦與昇溫部200之加熱爐210之構造相同或類似。此時，冷卻部400中可備置用於均勻冷卻基板50之多種冷卻機構。 The cooling unit 400 can cool the substrate 50 fed from the program portion 300 to a predetermined temperature, and then transport it to the unloading portion 500. The cooling unit 400 includes at least two heating furnaces 410 and 430 whose temperature can be independently controlled, and the number of the heating furnaces 410 and 430 of the cooling unit 400 can be appropriately measured in consideration of the heat treatment temperature of the substrate 50. The configuration of the heating furnaces 410, 430 of the cooling portion 400 is also the same as or similar to that of the heating furnace 210 of the temperature rising portion 200. At this time, a plurality of cooling mechanisms for uniformly cooling the substrate 50 can be provided in the cooling portion 400.
卸載部500包含加熱爐510，構造與裝載部100相同或類似。為免送入卸載部500之基板50變形，將在均勻冷卻至諸如100℃以下後，加以送至次一製程。此時，卸載部500中可備置為均勻冷卻基板50而可加熱基板50上面之加熱器(未圖示)。送入卸載部500之基板50將藉前述機械臂等而送出至外部。 The unloading unit 500 includes a heating furnace 510 having the same or similar configuration as the loading unit 100. In order to avoid deformation of the substrate 50 fed into the unloading portion 500, it will be sent to the next process after being uniformly cooled to, for example, 100 ° C or lower. At this time, the unloading unit 500 can be provided with a heater (not shown) that can uniformly cool the substrate 50 and heat the upper surface of the substrate 50. The substrate 50 fed to the unloading unit 500 is sent to the outside by the aforementioned robot arm or the like.
本實施形態之各加熱爐110、210、250、270、310、410、430、510之溫度在不使基板50受損之程度上存在差異。然而，彼此鄰接之加熱爐110與210、210與250、250與270、270與310、310與410、410與430、430與510之間則存在溫差。而，若彼此鄰接之加熱爐110與210、210與250、250與270、270與310、310與410、410與430、430與510之間之溫差甚大，則可能使基板50受損。 The temperatures of the heating furnaces 110, 210, 250, 270, 310, 410, 430, and 510 of the present embodiment differ in the extent that the substrate 50 is not damaged. However, there is a temperature difference between the heating furnaces 110 and 210, 210 and 250, 250 and 270, 270 and 310, 310 and 410, 410 and 430, 430 and 510 adjacent to each other. However, if the temperature difference between the heating furnaces 110 and 210, 210 and 250, 250 and 270, 270 and 310, 310 and 410, 410 and 430, 430 and 510 adjacent to each other is very large, the substrate 50 may be damaged.
本實施形態之直列型熱處理裝置構成使彼此鄰接之加熱爐110與210、210與250、250與270、270與310、310與410、410與430、430與510之間之溫差以徐緩之斜率呈線形而變 化。 The in-line type heat treatment apparatus of the present embodiment constitutes a gentle slope of the temperature difference between the heating furnaces 110 and 210, 210 and 250, 250 and 270, 270 and 310, 310 and 410, 410 and 430, 430 and 510 adjacent to each other. Linear change Chemical.
以下以昇溫部200之加熱爐210為其例而加以說明。 Hereinafter, the heating furnace 210 of the temperature rising unit 200 will be described as an example.
獨立設於加熱爐210之複數加熱器213可分別獨立受控制。此時，將控制加熱器213以使加熱爐210之溫度在沿基板50之輸送方向漸次上昇之形態下呈線形而變化。 The plurality of heaters 213 independently provided in the heating furnace 210 can be independently controlled. At this time, the heater 213 is controlled such that the temperature of the heating furnace 210 changes linearly in a form in which the temperature of the heating furnace 210 gradually rises in the conveying direction of the substrate 50.
其次，裝載部100之前述加熱器及加熱爐250、270之前述加熱器亦在與加熱爐210之加熱器213相同之形態下受控制。如此，自裝載部100至昇溫部200中，溫度係在沿基板50之輸送方向漸次上昇之形態下呈線形而變化。 Next, the heaters of the heaters and the heating furnaces 250 and 270 of the loading unit 100 are also controlled in the same manner as the heaters 213 of the heating furnace 210. As described above, in the temperature from the mounting unit 100 to the temperature rising unit 200, the temperature changes linearly in a state in which the temperature rises gradually along the transport direction of the substrate 50.
然後，程序部300則分別獨立控制程序部300之前述加熱器，以使基板50之熱處理溫度固定。 Then, the program unit 300 independently controls the heaters of the program unit 300 to fix the heat treatment temperature of the substrate 50.
冷卻部400之前述加熱器及卸載部500之前述加熱器則受控制，以使冷卻部400及卸載部500之溫度在沿基板50之輸送方向而漸次降低之形態下呈線形而變化。 The heater of the heater unit and the unloading unit 500 of the cooling unit 400 is controlled such that the temperature of the cooling unit 400 and the unloading unit 500 changes linearly in a state in which the temperature of the cooling unit 400 and the unloading unit 500 gradually decreases in the conveying direction of the substrate 50.
如此，彼此鄰接之加熱爐110與210、210與250、250與270、270與310、310與410、410與430、430與510之間之溫差將如第5圖所示，以徐緩之斜率呈線形而變化，故可避免基板50因熱震或熱應力而受損。因此，可提昇熱處理製程之生產率及可靠性。 Thus, the temperature difference between the heating furnaces 110 and 210, 210 and 250, 250 and 270, 270 and 310, 310 and 410, 410 and 430, 430 and 510 adjacent to each other will be as shown in Fig. 5, with a gentle slope. The linear shape changes, so that the substrate 50 can be prevented from being damaged by thermal shock or thermal stress. Therefore, the productivity and reliability of the heat treatment process can be improved.
本實施形態之直列型熱處理裝置之前述輸送機構係上抬基板50而加以輸送至鄰接之其它加熱爐。如此，前述輸送機構與前述基板50之間或前述輸送機構與前述基板托座之間將不產生任何摩擦力，故將不產生前述輸送機構與基板50之磨損或前述輸送機構與前述基板托座之磨損所致生 之微粒(Particle)。 In the in-line heat treatment apparatus of the present embodiment, the transport mechanism lifts the substrate 50 and transports it to another adjacent heating furnace. In this way, no frictional force is generated between the transport mechanism and the substrate 50 or between the transport mechanism and the substrate holder, so that the wear of the transport mechanism and the substrate 50 or the transport mechanism and the substrate holder are not generated. Caused by wear and tear Particles.
就前述輸送機構則參照第3、4及6圖加以說明。第6圖係第3及4圖所示之輸送機構之立體圖。 The above-described conveying mechanism will be described with reference to Figs. 3, 4 and 6. Figure 6 is a perspective view of the transport mechanism shown in Figures 3 and 4.
以下，說明前述輸送機構時，係以直接搭載基板50於前述輸送機構上而加以輸送之情形為例而加以說明。 Hereinafter, a case where the transport mechanism is directly transported by directly mounting the substrate 50 on the transport mechanism will be described as an example.
如圖所示，前述輸送機構包含輸送板220與支持構件230。 As shown, the aforementioned transport mechanism includes a transport plate 220 and a support member 230.
輸送板220形成矩形，與基板50之輸送方向平行而配置，並設成可對基板50之輸送方向垂直進行昇降運動，同時與基板50之輸送方向平行而進行前進運動或後退運動。支持構件230則備置有複數個，下端部對輸送板220隔有預定間隔而結合，上端部則可支持基板50。支持構件230並與輸送板220一同進行運動。 The conveying plate 220 is formed in a rectangular shape and arranged in parallel with the conveying direction of the substrate 50, and is provided so as to be vertically movable in the conveying direction of the substrate 50, and to advance or retreat in parallel with the conveying direction of the substrate 50. The support member 230 is provided with a plurality of members, and the lower end portion is coupled to the transport plate 220 with a predetermined interval therebetween, and the upper end portion supports the substrate 50. The support member 230 is moved together with the transport plate 220.
更具體而言，輸送板220包含彼此隔有間隔並與基板50之輸送方向平行而配置之複數第1輸送板221，以及與基板50之輸送方向平行而配置於彼此鄰接之第1輸送板221與第1輸送板221之間之複數第2輸送板225。 More specifically, the transporting plate 220 includes a plurality of first transporting plates 221 that are disposed at a distance from each other and that are parallel to the transporting direction of the substrate 50, and are disposed adjacent to the first transporting plate 221 adjacent to each other in parallel with the transporting direction of the substrate 50. A plurality of second transporting plates 225 are interposed between the first transporting plates 221 and the first transporting plates 221 .
第1輸送板221將上昇→前進→下降→後退，同時輸送基板50，第2輸送板225亦上昇→前進→下降→後退，同時輸送基板50。此時，第1輸送板221與第2輸送板225係獨立進行運動。其次，複數第1輸送板221係彼此進行同一運動，複數第2輸送板225亦彼此進行同一運動。因此，複數第1輸送板221藉連結構件222而彼此連結成一體，複數第2輸送板225亦藉連結構件226而彼此連結成一體。 The first transporting plate 221 is lifted, advanced, descended, and retracted, and the substrate 50 is transported, and the second transporting plate 225 is also raised, moved forward, descended, and retracted, and the substrate 50 is transported. At this time, the first transporting plate 221 and the second transporting plate 225 are independently moved. Next, the plurality of first conveying plates 221 are moved in the same movement, and the plurality of second conveying plates 225 are also moved in the same direction. Therefore, the plurality of first transporting plates 221 are integrally coupled to each other by the connecting member 222, and the plurality of second transporting plates 225 are also integrally coupled to each other by the connecting member 226.
支持構件230包含分別設於第1輸送板221之複數第1支持構件231，以及分別設於第2輸送板225之複數第2支持構件235。其次，第1及第2支持構件231、235分別包含下端部分別與第1及第2輸送板221、225結合之一對第1及第2垂直桿231a、235a、分別一體地形成於第1及第2垂直桿231a、235a之上端部而可搭載支持基板50之第1及第2水平桿231b、235b。 The support member 230 includes a plurality of first support members 231 provided on the first transport plate 221 and a plurality of second support members 235 respectively provided on the second transport plate 225. Then, each of the first and second support members 231 and 235 includes a pair of first and second vertical rods 231a and 235a which are respectively coupled to the first and second conveying plates 221 and 225, and are integrally formed in the first step. The first and second horizontal rods 231b and 235b of the support substrate 50 can be mounted on the upper ends of the second vertical rods 231a and 235a.
第1及第2水平桿231b、235b將接觸基板50，故接觸基板50之第1及第2水平桿231b、235b之面宜形成圓滑面。如此，即可避免因第1及第2水平桿231b、235b而於基板50上產生刮痕。 Since the first and second horizontal rods 231b and 235b are in contact with the substrate 50, it is preferable that the surfaces of the first and second horizontal rods 231b and 235b contacting the substrate 50 form a rounded surface. In this way, scratches on the substrate 50 due to the first and second horizontal bars 231b and 235b can be avoided.
加熱器213形成管狀，彼此隔有間隔而配置成與基板50之輸送方向交錯之形態，而可分別獨立受控制。 The heaters 213 are formed in a tubular shape, and are disposed to be spaced apart from each other in a direction intersecting with the conveying direction of the substrate 50, and can be independently controlled.
其次，第1及第2支持構件231、235位在彼此鄰接之加熱器213與加熱器213之間，並可於彼此鄰接之加熱器213與加熱器213之間之間隔內進行前進運動或後退運動。 Next, the first and second support members 231, 235 are positioned between the heaters 213 and the heaters 213 adjacent to each other, and can be moved forward or backward in the interval between the heaters 213 and the heaters 213 adjacent to each other. motion.
第3及4圖所示之未說明之標號241、243、245及247乃汽缸。汽缸241、243可分別使第1及第2輸送板221、225進行昇降運動，汽缸245、247可分別使第1及第2輸送板221、225進行前進運動或後退運動。此時，汽缸241、243下面為加熱爐210之下面所接觸支持，並分別與第1及第2輸送板221、225一同進行前進運動或後退運動，同時分別使第1及第2輸送板221、225進行昇降，汽缸245、247下面則為加熱爐210之側面所接觸支持，並分別與第1及第2輸送板221、 225一同進行昇降運動，同時分別使第1及第2輸送板221、225進行前進運動或後退運動。 Unillustrated numerals 241, 243, 245, and 247 shown in Figs. 3 and 4 are cylinders. The cylinders 241 and 243 can move the first and second conveying plates 221 and 225 up and down, respectively, and the cylinders 245 and 247 can advance and retreat the first and second conveying plates 221 and 225, respectively. At this time, the cylinders 241 and 243 are supported by the lower surface of the heating furnace 210, and are respectively advanced or retracted together with the first and second conveying plates 221 and 225, and the first and second conveying plates 221 are respectively formed. And 225 are lifted and lowered, and the cylinders 245 and 247 are supported by the side of the heating furnace 210, and are respectively connected to the first and second conveying plates 221, At the same time, the first and second conveying plates 221 and 225 perform the forward movement or the backward movement, respectively.
第1及第2輸送板221、225之運動可使用馬達、傳遞馬達之動力之傳動帶、鏈條或曲柄等而實現為多種形態。 The movement of the first and second conveying plates 221 and 225 can be realized in various forms using a motor, a power transmission belt that transmits a motor, a chain, a crank, or the like.
本實施形態中作為前述輸送機構之輸送板220與支持構件230之動作，則參照第6、7乃至15圖加以說明。第7乃至15圖係顯示第6圖所示之輸送機構之動作之立體圖。 The operation of the transporting plate 220 and the supporting member 230 as the transport mechanism in the present embodiment will be described with reference to Figs. 6, 7 and 15. Fig. 7 through Fig. 15 are perspective views showing the operation of the conveying mechanism shown in Fig. 6.
如第6圖所示，假設初始狀態係第1及第2輸送板221、225位在同一位置上，而第1及第2支持構件231、235上搭載支持有基板50之狀態。 As shown in FIG. 6, it is assumed that the initial state is that the first and second conveying plates 221 and 225 are at the same position, and the first and second supporting members 231 and 235 are mounted on the substrate 50.
第6圖所示之狀態下，欲輸送基板50時，首先，將使汽缸241(參照第3及4圖)動作而使第1輸送板221上昇。如此，則如第7圖所示，第1支持構件231藉第1輸送板221而上昇，故第1支持構件231所支持之基板50亦將上昇。 In the state shown in Fig. 6, when the substrate 50 is to be transported, first, the cylinder 241 (see Figs. 3 and 4) is operated to raise the first transporting plate 221. As described above, as shown in FIG. 7, the first support member 231 rises by the first transporting plate 221, so that the substrate 50 supported by the first supporting member 231 also rises.
其次，使汽缸245(參照第3圖)動作而使第1輸送板221前進，將如第8圖所示，基板50亦將前進而朝右側方向被輸送。此時，第1輸送板221將前進短於彼此鄰接之加熱器213(參照第3圖)與加熱器213之間之間隔之距離，自不待言。 Next, the cylinder 245 (see FIG. 3) is operated to advance the first transporting plate 221, and as shown in FIG. 8, the substrate 50 is also advanced and transported in the right direction. At this time, it is needless to say that the first transporting plate 221 is shorter than the distance between the heaters 213 (see FIG. 3) adjacent to each other and the heater 213.
第8圖所示之狀態下，使汽缸241動作而使第1輸送板221下降至下死點，將如第9圖所示，基板50將在已為第1支持構件231所支持之狀態下同時搭載支持於第2支持構件235上。一旦將基板50搭載於第2支持構件235上，即令汽缸243(參照第3圖)動作而如第10圖所示般使第2輸送板225上昇。 In the state shown in Fig. 8, the cylinder 241 is operated to lower the first transporting plate 221 to the bottom dead center, and as shown in Fig. 9, the substrate 50 will be supported by the first supporting member 231. At the same time, the support is supported on the second support member 235. When the substrate 50 is mounted on the second support member 235, the cylinder 243 (see FIG. 3) is operated, and the second transport plate 225 is raised as shown in FIG.
此時，第2輸送板225將略微上昇，而如第10圖所示，使基板50僅為第2支持構件235所支持，再使汽缸245動作而使第1輸送板221後退。其次，使第2輸送板225上昇至上死點。如此，即呈現第11圖所示之狀態。 At this time, the second transporting plate 225 is slightly raised. As shown in FIG. 10, the substrate 50 is supported only by the second supporting member 235, and the cylinder 245 is operated to retract the first transporting plate 221. Next, the second conveying plate 225 is raised to the top dead center. Thus, the state shown in Fig. 11 is presented.
如第10圖所示，在基板50同時為第1及第2支持構件231、235所支持之狀態下使第2輸送板225先上昇之理由，乃為避免基板50與第1支持構件231、基板50與第2支持構件235彼此摩擦之故。即，在基板50同時為第1及第2支持構件231、235所支持之狀態下使第1輸送板221後退，則基板50與第1支持構件231之間、基板50與第2支持構件235之間將產生摩擦力。為予以避免，而先使第2輸送板225上昇，然後使第1輸送板221後退。 As shown in FIG. 10, the reason why the second transporting plate 225 is raised first while the substrate 50 is supported by the first and second supporting members 231 and 235 is to avoid the substrate 50 and the first supporting member 231, The substrate 50 and the second support member 235 rub against each other. In other words, when the first transport plate 221 is retracted while the substrate 50 is supported by the first and second support members 231 and 235, the substrate 50 and the first support member 231, and the substrate 50 and the second support member 235 are provided. Friction will occur between them. To avoid this, the second transporting plate 225 is first raised, and then the first transporting plate 221 is retracted.
第11圖所示之狀態下，使汽缸247(參照第3圖)動作而使第2輸送板225前進，將如第12圖所示，基板50亦將前進而朝右側方向被輸送。此時，第2輸送板225則前進短於彼此鄰接之加熱器213與加熱器213之間之間隔之距離，自不待言。 In the state shown in Fig. 11, the cylinder 247 (see Fig. 3) is operated to advance the second transporting plate 225, and as shown in Fig. 12, the substrate 50 is also advanced and transported in the right direction. At this time, the second conveying plate 225 advances shorter than the distance between the heater 213 and the heater 213 which are adjacent to each other, and it goes without saying.
第12圖所示之狀態下，使汽缸243動作而使第2輸送板225下降至下死點，將如第13圖所示，基板50將在為第2支持構件235所支持之狀態下同時搭載支持於第1支持構件231上。一旦將基板50搭載於第1支持構件231上，即令汽缸241動作而如第14圖所示般使第1輸送板221上昇。 In the state shown in Fig. 12, the cylinder 243 is operated to lower the second transporting plate 225 to the bottom dead center, and as shown in Fig. 13, the substrate 50 is simultaneously supported by the second supporting member 235. The support is supported on the first support member 231. When the substrate 50 is mounted on the first supporting member 231, the cylinder 241 is operated to raise the first conveying plate 221 as shown in Fig. 14 .
第1輸送板221將略微上昇，而如第14圖所示，使基板50僅為第1支持構件231所支持，再使汽缸247動作而使第2 輸送板225後退。其次，使第1輸送板221上昇至上死點。如此，即呈現第15圖所示之狀態。第15圖之狀態即如第7圖所示之狀態。 The first transporting plate 221 is slightly raised, and as shown in Fig. 14, the substrate 50 is supported only by the first supporting member 231, and the cylinder 247 is operated to make the second The conveying plate 225 is retracted. Next, the first transporting plate 221 is raised to the top dead center. Thus, the state shown in Fig. 15 is presented. The state of Fig. 15 is the state shown in Fig. 7.
如第14圖所示，在基板50同時為第1及第2支持構件231、235所支持之狀態下使第1輸送板221先上昇之理由，一如前述，乃為避免基板50與第1支持構件231、基板50與第2支持構件235彼此摩擦之故。 As shown in Fig. 14, the reason why the first transporting plate 221 is raised first while the substrate 50 is supported by the first and second supporting members 231 and 235 is as follows, to avoid the substrate 50 and the first The support member 231, the substrate 50, and the second support member 235 rub against each other.
第15圖所示之狀態下，使汽缸241動作而使第1輸送板221前進，將如第8圖所示，基板50亦將前進而朝右側方向被輸送。 In the state shown in Fig. 15, the cylinder 241 is operated to advance the first transporting plate 221, and as shown in Fig. 8, the substrate 50 is also advanced and transported in the right direction.
一如前述，第1輸送板221與第2輸送板225係在交替形態下連續進行運動，而輸送基板50。 As described above, the first transporting plate 221 and the second transporting plate 225 are continuously moved in an alternate configuration to transport the substrate 50.
下面為加熱爐210之下面所支持而可分別使第1及第2輸送板221、225進行昇降之汽缸241、243亦與第1及第2輸送板221、225一同前進及後退，自不待言，下面為加熱爐210之側面所支持而可使第1及第2輸送板221、225前進及後退之汽缸245、247亦與第1及第2輸送板221、225一同上昇，亦不待言。 The cylinders 241 and 243 which are respectively supported by the lower surface of the heating furnace 210 and which can lift and lower the first and second conveying plates 221 and 225 are also advanced and retracted together with the first and second conveying plates 221 and 225, and it is self-evident. It is needless to say that the cylinders 245 and 247 which are supported by the side faces of the heating furnace 210 to advance and retreat the first and second conveying plates 221 and 225 are also raised together with the first and second conveying plates 221 and 225.
在彼此鄰接之加熱爐110與210、210與250、250與270、270與310、310與410、410與430、430與510之間輸送基板50時，分別設於彼此鄰接之加熱爐110與210、210與250、250與270、270與310、310與410、410與430、430與510之前述第1輸送板將進行同一運動，前述第2輸送板亦進行同一運動。 When the substrates 50 are transported between the heating furnaces 110 and 210, 210 and 250, 250 and 270, 270 and 310, 310 and 410, 410 and 430, 430 and 510 adjacent to each other, they are respectively disposed adjacent to the heating furnace 110 and 210, 210 and 250, 250 and 270, 270 and 310, 310 and 410, 410 and 430, 430 and 510, the first transporting plate will perform the same motion, and the second transporting plate will also perform the same motion.
本實施形態之直列型熱處理裝置在基板50與用於輸送基板50之零件之間不發生摩擦，故不僅可避免產生微粒，並可避免輸送基板50之零件之磨損。因此，可提昇熱處理程序之生產率及可靠性。 The in-line type heat treatment apparatus of the present embodiment does not cause friction between the substrate 50 and the member for transporting the substrate 50, so that not only the generation of particles but also the wear of the parts of the substrate 50 can be avoided. Therefore, the productivity and reliability of the heat treatment process can be improved.
以上所說明之本發明之實施形態之相關圖示已省略詳細輪廓線，並概略顯示屬於本發明之技術思想之部分以利理解。且，上述之實施形態並非用於限定本發明之技術思想之標準，純屬用於說明本發明之申請專利範圍所包含之技術內容之參考性內容。 The related drawings of the embodiments of the present invention described above have been omitted from the detailed outlines, and the parts of the technical idea of the present invention are schematically shown for the sake of understanding. Further, the above-described embodiments are not intended to limit the technical scope of the present invention, and are purely for the purpose of explaining the technical contents included in the technical scope of the present invention.
50‧‧‧基板 50‧‧‧Substrate
100‧‧‧裝載部 100‧‧‧Loading Department
110‧‧‧加熱爐 110‧‧‧heating furnace
200‧‧‧昇溫部 200‧‧‧The Ministry of Heating
210‧‧‧第1加熱爐 210‧‧‧1st heating furnace
213‧‧‧加熱器 213‧‧‧heater
220‧‧‧輸送板 220‧‧‧Transportation board
221‧‧‧第1輸送板 221‧‧‧1st conveying plate
222‧‧‧連結構件 222‧‧‧Connected components
225‧‧‧第2輸送板 225‧‧‧2nd conveying plate
226‧‧‧連結構件 226‧‧‧Connected components
230‧‧‧支持構件 230‧‧‧Support components
231‧‧‧第1支持構件 231‧‧‧1st support member
231a、235a‧‧‧第1及第2垂直桿 231a, 235a‧‧‧1st and 2nd vertical poles
231b、235b‧‧‧第1及第2水平桿 231b, 235b‧‧‧1st and 2nd horizontal poles
235‧‧‧第2支持構件 235‧‧‧2nd support member
241、243、245、247‧‧‧汽缸 241, 243, 245, 247‧ ‧ cylinders
250‧‧‧第2加熱爐 250‧‧‧2nd heating furnace
270‧‧‧第3加熱爐 270‧‧‧3rd heating furnace
300‧‧‧程序部 300‧‧‧Program Department
310‧‧‧加熱爐 310‧‧‧heating furnace
400‧‧‧冷卻部 400‧‧‧Department of Cooling
410、430‧‧‧加熱爐 410, 430‧‧‧ heating furnace
500‧‧‧卸載部 500‧‧‧Unloading Department
510‧‧‧加熱爐 510‧‧‧heating furnace
第1圖係顯示習知之直列型熱處理裝置之溫度變化者。 Fig. 1 shows the temperature change of a conventional in-line heat treatment apparatus.
第2圖係顯示本發明一實施形態之直列型熱處理裝置之概略構造之正面圖。 Fig. 2 is a front elevational view showing the schematic structure of an in-line heat treatment apparatus according to an embodiment of the present invention.
第3圖係第2圖所示之昇溫部之加熱爐之放大圖。 Fig. 3 is an enlarged view of the heating furnace of the temperature rising portion shown in Fig. 2.
第4圖係第3圖之側面圖。 Figure 4 is a side view of Figure 3.
第5圖係顯示本發明一實施形態之直列型熱處理裝置之溫度變化者。 Fig. 5 is a view showing changes in temperature of an in-line type heat treatment apparatus according to an embodiment of the present invention.
第6圖係第3及4圖所示之輸送機構之立體圖。 Figure 6 is a perspective view of the transport mechanism shown in Figures 3 and 4.
第7圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 7 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第8圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 8 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第9圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 9 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第10圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 10 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第11圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 11 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第12圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 12 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第13圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 13 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第14圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 14 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
第15圖係顯示第6圖所示之輸送機構之動作之立體圖。 Fig. 15 is a perspective view showing the operation of the conveying mechanism shown in Fig. 6.
50‧‧‧基板 50‧‧‧Substrate
100‧‧‧裝載部 100‧‧‧Loading Department
110‧‧‧加熱爐 110‧‧‧heating furnace
200‧‧‧昇溫部 200‧‧‧The Ministry of Heating
210、250、270‧‧‧加熱爐 210, 250, 270‧ ‧ heating furnace
213‧‧‧加熱器 213‧‧‧heater
221‧‧‧第1輸送板 221‧‧‧1st conveying plate
231a‧‧‧第1垂直桿 231a‧‧‧1st vertical pole
300‧‧‧程序部 300‧‧‧Program Department
310‧‧‧加熱爐 310‧‧‧heating furnace
400‧‧‧冷卻部 400‧‧‧Department of Cooling
410、430‧‧‧加熱爐 410, 430‧‧‧ heating furnace
500‧‧‧卸載部 500‧‧‧Unloading Department
510‧‧‧加熱爐 510‧‧‧heating furnace
Claims (10)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110041935A KR20120124192A (en) | 2011-05-03 | 2011-05-03 | In-line type heat treatment apparatus and method for controlling temperature of the same |
| KR1020110050943A KR101258629B1 (en) | 2011-05-27 | 2011-05-27 | In-line type heat treatment apparatus and method for transporting substrate of the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201310498A true TW201310498A (en) | 2013-03-01 |
Family
ID=47108124
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101115580A TW201310498A (en) | 2011-05-03 | 2012-05-02 | In-line type heat treatment apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2014519187A (en) |
| CN (1) | CN103503123A (en) |
| TW (1) | TW201310498A (en) |
| WO (1) | WO2012150798A2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256841B (en) * | 2017-05-31 | 2020-07-03 | 武汉华星光电技术有限公司 | Quick thermal annealing machine |
| CN107887308A (en) * | 2017-12-01 | 2018-04-06 | 合肥芯欣智能科技有限公司 | Full-automatic multi-functional processing equipment |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3663674B2 (en) * | 1995-05-15 | 2005-06-22 | 日本電池株式会社 | UV treatment equipment |
| JP3202929B2 (en) * | 1996-09-13 | 2001-08-27 | 東京エレクトロン株式会社 | Processing system |
| JP3933524B2 (en) * | 2002-05-30 | 2007-06-20 | 東京エレクトロン株式会社 | Substrate processing equipment |
| KR101015596B1 (en) * | 2005-02-28 | 2011-02-17 | 주식회사 비아트론 | Apparatus for Heat Treatment of Semiconductor Thin Film |
| KR101015597B1 (en) * | 2004-05-12 | 2011-02-17 | 주식회사 비아트론 | Apparatus for Heat Treatment of Semiconductor device |
| KR100897850B1 (en) * | 2007-06-18 | 2009-05-15 | 세메스 주식회사 | Apparatus for processing a substrate |
-
2012
- 2012-05-02 TW TW101115580A patent/TW201310498A/en unknown
- 2012-05-02 WO PCT/KR2012/003408 patent/WO2012150798A2/en active Application Filing
- 2012-05-02 CN CN201280020758.0A patent/CN103503123A/en active Pending
- 2012-05-02 JP JP2014509242A patent/JP2014519187A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014519187A (en) | 2014-08-07 |
| CN103503123A (en) | 2014-01-08 |
| WO2012150798A2 (en) | 2012-11-08 |
| WO2012150798A3 (en) | 2013-03-21 |
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