CN103426769B - 半导体器件制造方法 - Google Patents
半导体器件制造方法 Download PDFInfo
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- CN103426769B CN103426769B CN201210168214.0A CN201210168214A CN103426769B CN 103426769 B CN103426769 B CN 103426769B CN 201210168214 A CN201210168214 A CN 201210168214A CN 103426769 B CN103426769 B CN 103426769B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 77
- 238000009792 diffusion process Methods 0.000 claims abstract description 52
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims abstract description 15
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000002347 injection Methods 0.000 claims abstract description 12
- 239000007924 injection Substances 0.000 claims abstract description 12
- 230000004888 barrier function Effects 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 14
- 229910052796 boron Inorganic materials 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- -1 phosphonium ion Chemical class 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 18
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 abstract description 6
- 239000003575 carbonaceous material Substances 0.000 abstract description 3
- 238000000407 epitaxy Methods 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000002513 implantation Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002244 LaAlO3 Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004899 motility Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (16)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210168214.0A CN103426769B (zh) | 2012-05-25 | 2012-05-25 | 半导体器件制造方法 |
US13/580,962 US8716090B2 (en) | 2012-05-25 | 2012-06-12 | Semiconductor device manufacturing method |
PCT/CN2012/000803 WO2013173944A1 (zh) | 2012-05-25 | 2012-06-12 | 半导体器件制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210168214.0A CN103426769B (zh) | 2012-05-25 | 2012-05-25 | 半导体器件制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN103426769A CN103426769A (zh) | 2013-12-04 |
CN103426769B true CN103426769B (zh) | 2016-08-03 |
Family
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Application Number | Title | Priority Date | Filing Date |
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CN201210168214.0A Active CN103426769B (zh) | 2012-05-25 | 2012-05-25 | 半导体器件制造方法 |
Country Status (2)
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CN (1) | CN103426769B (zh) |
WO (1) | WO2013173944A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104752212B (zh) * | 2013-12-30 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | 晶体管的形成方法 |
CN104979291A (zh) * | 2014-04-10 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN105374684A (zh) * | 2014-08-30 | 2016-03-02 | 中芯国际集成电路制造(上海)有限公司 | Pmos结构及其形成方法 |
CN106158634A (zh) * | 2015-03-30 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
CN109087859B (zh) * | 2017-06-13 | 2022-02-08 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN110047908B (zh) * | 2018-01-16 | 2023-02-17 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
CN110047754A (zh) * | 2018-01-16 | 2019-07-23 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
CN109473469A (zh) * | 2018-10-29 | 2019-03-15 | 上海华力集成电路制造有限公司 | Nmos管及其制造方法 |
CN115863396B (zh) * | 2023-01-29 | 2023-05-12 | 合肥晶合集成电路股份有限公司 | 一种半导体器件及其制作方法 |
CN116646402B (zh) * | 2023-07-21 | 2023-10-17 | 合肥晶合集成电路股份有限公司 | 一种半导体器件及其制造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101542699A (zh) * | 2007-01-09 | 2009-09-23 | 索尼株式会社 | 半导体器件和制造半导体器件的方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7485536B2 (en) * | 2005-12-30 | 2009-02-03 | Intel Corporation | Abrupt junction formation by atomic layer epitaxy of in situ delta doped dopant diffusion barriers |
US7989901B2 (en) * | 2007-04-27 | 2011-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS devices with improved source/drain regions with SiGe |
US7927989B2 (en) * | 2007-07-27 | 2011-04-19 | Freescale Semiconductor, Inc. | Method for forming a transistor having gate dielectric protection and structure |
US7838887B2 (en) * | 2008-04-30 | 2010-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain carbon implant and RTA anneal, pre-SiGe deposition |
CN102437118B (zh) * | 2010-09-29 | 2015-07-15 | 联华电子股份有限公司 | 具有金属栅极的晶体管的制作方法 |
-
2012
- 2012-05-25 CN CN201210168214.0A patent/CN103426769B/zh active Active
- 2012-06-12 WO PCT/CN2012/000803 patent/WO2013173944A1/zh active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101542699A (zh) * | 2007-01-09 | 2009-09-23 | 索尼株式会社 | 半导体器件和制造半导体器件的方法 |
Also Published As
Publication number | Publication date |
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WO2013173944A1 (zh) | 2013-11-28 |
CN103426769A (zh) | 2013-12-04 |
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