CN103426732B - 低温晶圆键合的方法及通过该方法形成的结构 - Google Patents
低温晶圆键合的方法及通过该方法形成的结构 Download PDFInfo
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- CN103426732B CN103426732B CN201210161459.0A CN201210161459A CN103426732B CN 103426732 B CN103426732 B CN 103426732B CN 201210161459 A CN201210161459 A CN 201210161459A CN 103426732 B CN103426732 B CN 103426732B
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Abstract
Description
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CN201210161459.0A CN103426732B (zh) | 2012-05-18 | 2012-05-18 | 低温晶圆键合的方法及通过该方法形成的结构 |
US13/896,593 US8802541B2 (en) | 2012-05-18 | 2013-05-17 | Method for low temperature wafer bonding and bonded structure |
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FR2990054B1 (fr) * | 2012-04-27 | 2014-05-02 | Commissariat Energie Atomique | Procede de collage dans une atmosphere de gaz presentant un coefficient de joule-thomson negatif. |
WO2014113503A1 (en) * | 2013-01-16 | 2014-07-24 | QMAT, Inc. | Techniques for forming optoelectronic devices |
US20150048509A1 (en) * | 2013-08-16 | 2015-02-19 | Globalfoundries Singapore Pte. Ltd. | Cmos compatible wafer bonding layer and process |
CN104051337B (zh) * | 2014-04-24 | 2017-02-15 | 上海珏芯光电科技有限公司 | 立体堆叠集成电路系统芯片封装的制造方法与测试方法 |
JP2016018846A (ja) * | 2014-07-07 | 2016-02-01 | 株式会社東芝 | 半導体パッケージ及び半導体パッケージの製造方法 |
CN105990165B (zh) * | 2015-02-02 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
CN104992910B (zh) * | 2015-06-24 | 2017-07-28 | 武汉新芯集成电路制造有限公司 | 一种金属突刺混合键合方法 |
US9852988B2 (en) * | 2015-12-18 | 2017-12-26 | Invensas Bonding Technologies, Inc. | Increased contact alignment tolerance for direct bonding |
US20190031502A1 (en) * | 2016-02-11 | 2019-01-31 | Agency For Science, Technology And Research | SEAL RING FOR AL-Ge BONDING |
US10204893B2 (en) * | 2016-05-19 | 2019-02-12 | Invensas Bonding Technologies, Inc. | Stacked dies and methods for forming bonded structures |
CN106571334B (zh) * | 2016-10-26 | 2020-11-10 | 上海集成电路研发中心有限公司 | 一种硅片间的混合键合方法 |
CN106449580B (zh) * | 2016-11-30 | 2019-04-26 | 新昌县峰特年智能科技有限公司 | 一种晶圆键合结构 |
US10658313B2 (en) | 2017-12-11 | 2020-05-19 | Invensas Bonding Technologies, Inc. | Selective recess |
US10790262B2 (en) * | 2018-04-11 | 2020-09-29 | Invensas Bonding Technologies, Inc. | Low temperature bonded structures |
US10340249B1 (en) * | 2018-06-25 | 2019-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
CN110875192A (zh) * | 2018-09-04 | 2020-03-10 | 中芯集成电路(宁波)有限公司 | 晶圆级封装方法及封装结构 |
CN110875268A (zh) * | 2018-09-04 | 2020-03-10 | 中芯集成电路(宁波)有限公司 | 晶圆级封装方法及封装结构 |
JP2021535613A (ja) * | 2018-09-04 | 2021-12-16 | 中芯集成電路(寧波)有限公司 | ウェハレベルパッケージ方法及びパッケージ構造 |
US11158573B2 (en) * | 2018-10-22 | 2021-10-26 | Invensas Bonding Technologies, Inc. | Interconnect structures |
KR20210083328A (ko) | 2019-02-11 | 2021-07-06 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 확산 불가능한 전도성 재료로 제조된 본딩 컨택을 갖는 본딩된 반도체 구조 및 이를 형성하기 위한 방법 |
WO2020188719A1 (ja) * | 2019-03-18 | 2020-09-24 | キオクシア株式会社 | 半導体装置およびその製造方法 |
EP3734652A1 (en) * | 2019-05-02 | 2020-11-04 | ams AG | Semiconductor device and method for manufacturing a semiconductor device |
DE102019208399A1 (de) * | 2019-06-07 | 2020-12-10 | Robert Bosch Gmbh | Verfahren zum Verbinden von Wafern und Vorrichtung |
CN110429038A (zh) * | 2019-08-09 | 2019-11-08 | 芯盟科技有限公司 | 半导体结构及其形成方法 |
CN111146141A (zh) * | 2019-12-13 | 2020-05-12 | 中国科学院微电子研究所 | 一种片上单晶材料的制备方法 |
WO2021138792A1 (en) * | 2020-01-07 | 2021-07-15 | Yangtze Memory Technologies Co., Ltd. | Metal-dielectric bonding method and structure |
CN111162041A (zh) * | 2020-01-09 | 2020-05-15 | 长江存储科技有限责任公司 | 半导体结构及其形成方法 |
CN116250074A (zh) * | 2020-09-30 | 2023-06-09 | 华为技术有限公司 | 三维集成电路及其制备方法、电子设备 |
TWI795156B (zh) * | 2021-09-02 | 2023-03-01 | 日商鎧俠股份有限公司 | 半導體裝置及半導體裝置之製造方法 |
CN114735642A (zh) * | 2022-04-24 | 2022-07-12 | 中山大学南昌研究院 | 一种提高金属键合强度的方法 |
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CN102381677A (zh) * | 2010-08-27 | 2012-03-21 | 台湾积体电路制造股份有限公司 | 复合晶片半导体元件及其形成方法 |
CN202855741U (zh) * | 2012-05-18 | 2013-04-03 | 上海丽恒光微电子科技有限公司 | 晶圆与晶圆、晶圆与芯片、芯片与芯片键合的结构 |
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Effective date of registration: 20200426 Address after: 315803 3 buildings, 4 buildings and 5 buildings, 335 Anju Road, Xiaogang street, Beilun District, Ningbo, Zhejiang. Patentee after: China core integrated circuit (Ningbo) Co., Ltd Address before: 710075, arc building, No. 60, West Avenue, new industrial park, hi tech Zone, Shaanxi, Xi'an, 204 Patentee before: Xi'an Yisheng Photoelectric Technology Co., Ltd. |
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