CN103380400B - 正型感光性组合物及其固化物 - Google Patents

正型感光性组合物及其固化物 Download PDF

Info

Publication number
CN103380400B
CN103380400B CN201280007372.6A CN201280007372A CN103380400B CN 103380400 B CN103380400 B CN 103380400B CN 201280007372 A CN201280007372 A CN 201280007372A CN 103380400 B CN103380400 B CN 103380400B
Authority
CN
China
Prior art keywords
group
general formula
carbon atoms
compound
represented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280007372.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN103380400A (zh
Inventor
竹之内宏美
尾见仁一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adeka Corp
Original Assignee
Asahi Denka Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Denka Kogyo KK filed Critical Asahi Denka Kogyo KK
Publication of CN103380400A publication Critical patent/CN103380400A/zh
Application granted granted Critical
Publication of CN103380400B publication Critical patent/CN103380400B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
    • C07F7/21Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/045Polysiloxanes containing less than 25 silicon atoms
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/12Polysiloxanes containing silicon bound to hydrogen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/38Polysiloxanes modified by chemical after-treatment
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/80Siloxanes having aromatic substituents, e.g. phenyl side groups
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CN201280007372.6A 2011-05-11 2012-04-26 正型感光性组合物及其固化物 Expired - Fee Related CN103380400B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011106297A JP5698070B2 (ja) 2011-05-11 2011-05-11 ポジ型感光性組成物及びその硬化物
JP2011-106297 2011-05-11
PCT/JP2012/061246 WO2012153648A1 (ja) 2011-05-11 2012-04-26 ポジ型感光性組成物及びその硬化物

Publications (2)

Publication Number Publication Date
CN103380400A CN103380400A (zh) 2013-10-30
CN103380400B true CN103380400B (zh) 2016-03-30

Family

ID=47139132

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280007372.6A Expired - Fee Related CN103380400B (zh) 2011-05-11 2012-04-26 正型感光性组合物及其固化物

Country Status (5)

Country Link
JP (1) JP5698070B2 (enExample)
KR (1) KR20140006855A (enExample)
CN (1) CN103380400B (enExample)
TW (1) TWI530761B (enExample)
WO (1) WO2012153648A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6086739B2 (ja) * 2013-01-21 2017-03-01 東京応化工業株式会社 絶縁膜形成用組成物、絶縁膜の製造方法、及び絶縁膜
JP6438259B2 (ja) * 2014-10-01 2018-12-12 旭化成株式会社 オルガノポリシロキサン、オルガノポリシロキサン組成物、オルガノポリシロキサンの製造方法、硬化性樹脂組成物、光半導体用封止材、光半導体用ダイボンド材、及び光半導体パッケージ
CN107075255B (zh) * 2014-10-21 2020-05-22 日产化学工业株式会社 Led用封装材料组合物
JP6484428B2 (ja) 2014-10-31 2019-03-13 東京応化工業株式会社 レジストパターン形成装置およびレジストパターン形成方法
JP2016092120A (ja) * 2014-10-31 2016-05-23 東京応化工業株式会社 レジストパターン形成装置およびレジストパターン形成方法
EP3255494A4 (en) * 2015-02-04 2018-10-10 AZ Electronic Materials (Luxembourg) S.à.r.l. Positive photosensitive siloxane composition, active matrix substrate, display device, and method for producing active matrix substrate
JP6683423B2 (ja) * 2015-02-26 2020-04-22 旭化成株式会社 硬化性樹脂組成物及びその製造方法、並びに、光半導体用封止材、光半導体用ダイボンド材、及び光半導体パッケージ
JP6688003B2 (ja) * 2015-02-26 2020-04-28 旭化成株式会社 硬化性樹脂組成物及びその製造方法、並びに、光半導体用封止材、光半導体用ダイボンド材、及び光半導体パッケージ
JP6518548B2 (ja) 2015-08-10 2019-05-22 東京応化工業株式会社 紫外線照射装置、レジストパターン形成装置、紫外線照射方法及びレジストパターン形成方法
WO2024150635A1 (ja) * 2023-01-10 2024-07-18 富士フイルム株式会社 処理液、処理液収容体
WO2024150630A1 (ja) * 2023-01-10 2024-07-18 富士フイルム株式会社 薬液、薬液収容体、パターン形成方法、電子デバイスの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1782878A (zh) * 2004-11-26 2006-06-07 东丽株式会社 正型感光性硅氧烷组合物、由其形成的固化膜、以及具备固化膜的元件
WO2010047248A1 (ja) * 2008-10-21 2010-04-29 株式会社Adeka ポジ型感光性組成物及び永久レジスト
JP2010138270A (ja) * 2008-12-11 2010-06-24 Kaneka Corp 金属酸化物微粒子含有硬化性樹脂組成物、その硬化物、及び光拡散材
CN101855598A (zh) * 2007-11-13 2010-10-06 株式会社Adeka 正型感光性组合物、正型永久抗蚀膜及正型永久抗蚀膜的制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5338532B2 (ja) * 2009-07-13 2013-11-13 Jnc株式会社 ポジ型感光性組成物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1782878A (zh) * 2004-11-26 2006-06-07 东丽株式会社 正型感光性硅氧烷组合物、由其形成的固化膜、以及具备固化膜的元件
CN101855598A (zh) * 2007-11-13 2010-10-06 株式会社Adeka 正型感光性组合物、正型永久抗蚀膜及正型永久抗蚀膜的制造方法
WO2010047248A1 (ja) * 2008-10-21 2010-04-29 株式会社Adeka ポジ型感光性組成物及び永久レジスト
JP2010138270A (ja) * 2008-12-11 2010-06-24 Kaneka Corp 金属酸化物微粒子含有硬化性樹脂組成物、その硬化物、及び光拡散材

Also Published As

Publication number Publication date
TWI530761B (zh) 2016-04-21
JP5698070B2 (ja) 2015-04-08
CN103380400A (zh) 2013-10-30
WO2012153648A1 (ja) 2012-11-15
TW201250390A (en) 2012-12-16
JP2012237854A (ja) 2012-12-06
KR20140006855A (ko) 2014-01-16

Similar Documents

Publication Publication Date Title
CN103380400B (zh) 正型感光性组合物及其固化物
CN102112922B (zh) 正型感光性组合物及永久抗蚀剂
JP5105555B2 (ja) ポジ型感光性組成物、ポジ型永久レジスト及びポジ型永久レジストの製造方法
JP5136777B2 (ja) ポリオルガノシロキサン化合物、これを含む樹脂組成物及びこれらのパターン形成方法
CN103076721A (zh) 正型感光性组合物
JP5479993B2 (ja) ポジ型感光性組成物及び永久レジスト
CN103229103B (zh) 感光性树脂组合物
CN102918460A (zh) 感光性硅氧烷组合物、由其形成的固化膜和具有固化膜的元件
CN108700807A (zh) 正型感光性硅氧烷组合物
CN102566279B (zh) 正型感光性树脂组合物及永久抗蚀剂
JP5666266B2 (ja) ポジ型感光性樹脂組成物及び永久レジスト
JP7624298B2 (ja) 変性シロキサンジイソシアネート化合物、ポリイミド樹脂およびポジ型感光性ポリイミド樹脂組成物
KR20120056773A (ko) 포지티브형 감광성 수지 조성물 및 영구 레지스트
WO2025074731A1 (ja) 分岐状オルガノポリシロキサン、それを含む組成物およびその用途
TW202413493A (zh) 硬化性分支狀有機聚矽氧烷、含有其之高能量線硬化性組成物及其用途
TW202417548A (zh) 共改質分支狀有機聚矽氧烷、含有其之高能量線硬化性組成物及其用途
KR20090113183A (ko) 폴리유기실록산 화합물, 이것을 포함하는 수지 조성물 및 이들의 패턴 형성 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160330

Termination date: 20200426

CF01 Termination of patent right due to non-payment of annual fee