KR20140006855A - 포지티브형 감광성 조성물 및 그 경화물 - Google Patents

포지티브형 감광성 조성물 및 그 경화물 Download PDF

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Publication number
KR20140006855A
KR20140006855A KR1020137020225A KR20137020225A KR20140006855A KR 20140006855 A KR20140006855 A KR 20140006855A KR 1020137020225 A KR1020137020225 A KR 1020137020225A KR 20137020225 A KR20137020225 A KR 20137020225A KR 20140006855 A KR20140006855 A KR 20140006855A
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KR
South Korea
Prior art keywords
group
general formula
compound
represented
photosensitive composition
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Ceased
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KR1020137020225A
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English (en)
Korean (ko)
Inventor
히로미 타케노우치
진이치 오미
Original Assignee
가부시키가이샤 아데카
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Application filed by 가부시키가이샤 아데카 filed Critical 가부시키가이샤 아데카
Publication of KR20140006855A publication Critical patent/KR20140006855A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/045—Polysiloxanes containing less than 25 silicon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/38—Polysiloxanes modified by chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020137020225A 2011-05-11 2012-04-26 포지티브형 감광성 조성물 및 그 경화물 Ceased KR20140006855A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011106297A JP5698070B2 (ja) 2011-05-11 2011-05-11 ポジ型感光性組成物及びその硬化物
JPJP-P-2011-106297 2011-05-11
PCT/JP2012/061246 WO2012153648A1 (ja) 2011-05-11 2012-04-26 ポジ型感光性組成物及びその硬化物

Publications (1)

Publication Number Publication Date
KR20140006855A true KR20140006855A (ko) 2014-01-16

Family

ID=47139132

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137020225A Ceased KR20140006855A (ko) 2011-05-11 2012-04-26 포지티브형 감광성 조성물 및 그 경화물

Country Status (5)

Country Link
JP (1) JP5698070B2 (enExample)
KR (1) KR20140006855A (enExample)
CN (1) CN103380400B (enExample)
TW (1) TWI530761B (enExample)
WO (1) WO2012153648A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6086739B2 (ja) * 2013-01-21 2017-03-01 東京応化工業株式会社 絶縁膜形成用組成物、絶縁膜の製造方法、及び絶縁膜
JP6438259B2 (ja) * 2014-10-01 2018-12-12 旭化成株式会社 オルガノポリシロキサン、オルガノポリシロキサン組成物、オルガノポリシロキサンの製造方法、硬化性樹脂組成物、光半導体用封止材、光半導体用ダイボンド材、及び光半導体パッケージ
US10066059B2 (en) * 2014-10-21 2018-09-04 Nissan Chemical Industries, Ltd. Sealing material composition for LED
JP6484428B2 (ja) 2014-10-31 2019-03-13 東京応化工業株式会社 レジストパターン形成装置およびレジストパターン形成方法
JP2016092120A (ja) * 2014-10-31 2016-05-23 東京応化工業株式会社 レジストパターン形成装置およびレジストパターン形成方法
JP6487947B2 (ja) * 2015-02-04 2019-03-20 堺ディスプレイプロダクト株式会社 ポジ型感光性シロキサン組成物、アクティブマトリクス基板、表示装置、及びアクティブマトリクス基板の製造方法
JP6688003B2 (ja) * 2015-02-26 2020-04-28 旭化成株式会社 硬化性樹脂組成物及びその製造方法、並びに、光半導体用封止材、光半導体用ダイボンド材、及び光半導体パッケージ
JP6683423B2 (ja) * 2015-02-26 2020-04-22 旭化成株式会社 硬化性樹脂組成物及びその製造方法、並びに、光半導体用封止材、光半導体用ダイボンド材、及び光半導体パッケージ
JP6518548B2 (ja) 2015-08-10 2019-05-22 東京応化工業株式会社 紫外線照射装置、レジストパターン形成装置、紫外線照射方法及びレジストパターン形成方法
JPWO2024150635A1 (enExample) * 2023-01-10 2024-07-18
KR20250119620A (ko) * 2023-01-10 2025-08-07 후지필름 가부시키가이샤 약액, 약액 수용체, 패턴 형성 방법, 전자 디바이스의 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1662322B1 (en) * 2004-11-26 2017-01-11 Toray Industries, Inc. Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film
WO2009063887A1 (ja) * 2007-11-13 2009-05-22 Adeka Corporation ポジ型感光性組成物、ポジ型永久レジスト及びポジ型永久レジストの製造方法
JP4960330B2 (ja) * 2008-10-21 2012-06-27 株式会社Ａｄｅｋａ ポジ型感光性組成物及び永久レジスト
JP5336161B2 (ja) * 2008-12-11 2013-11-06 株式会社カネカ 金属酸化物微粒子含有硬化性樹脂組成物、その硬化物、及び光拡散材
JP5338532B2 (ja) * 2009-07-13 2013-11-13 Ｊｎｃ株式会社 ポジ型感光性組成物

Also Published As

Publication number Publication date
WO2012153648A1 (ja) 2012-11-15
JP2012237854A (ja) 2012-12-06
TWI530761B (zh) 2016-04-21
CN103380400B (zh) 2016-03-30
JP5698070B2 (ja) 2015-04-08
CN103380400A (zh) 2013-10-30
TW201250390A (en) 2012-12-16

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