TWI530761B - A positive type photosensitive composition and a hardened product thereof - Google Patents

A positive type photosensitive composition and a hardened product thereof Download PDF

Info

Publication number
TWI530761B
TWI530761B TW101116248A TW101116248A TWI530761B TW I530761 B TWI530761 B TW I530761B TW 101116248 A TW101116248 A TW 101116248A TW 101116248 A TW101116248 A TW 101116248A TW I530761 B TWI530761 B TW I530761B
Authority
TW
Taiwan
Prior art keywords
group
carbon atoms
compound
formula
photosensitive composition
Prior art date
Application number
TW101116248A
Other languages
English (en)
Chinese (zh)
Other versions
TW201250390A (en
Inventor
竹之內宏美
尾見仁一
Original Assignee
艾迪科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 艾迪科股份有限公司 filed Critical 艾迪科股份有限公司
Publication of TW201250390A publication Critical patent/TW201250390A/zh
Application granted granted Critical
Publication of TWI530761B publication Critical patent/TWI530761B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/045—Polysiloxanes containing less than 25 silicon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/38—Polysiloxanes modified by chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW101116248A 2011-05-11 2012-05-07 A positive type photosensitive composition and a hardened product thereof TWI530761B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011106297A JP5698070B2 (ja) 2011-05-11 2011-05-11 ポジ型感光性組成物及びその硬化物

Publications (2)

Publication Number Publication Date
TW201250390A TW201250390A (en) 2012-12-16
TWI530761B true TWI530761B (zh) 2016-04-21

Family

ID=47139132

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101116248A TWI530761B (zh) 2011-05-11 2012-05-07 A positive type photosensitive composition and a hardened product thereof

Country Status (5)

Country Link
JP (1) JP5698070B2 (enExample)
KR (1) KR20140006855A (enExample)
CN (1) CN103380400B (enExample)
TW (1) TWI530761B (enExample)
WO (1) WO2012153648A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6086739B2 (ja) * 2013-01-21 2017-03-01 東京応化工業株式会社 絶縁膜形成用組成物、絶縁膜の製造方法、及び絶縁膜
JP6438259B2 (ja) * 2014-10-01 2018-12-12 旭化成株式会社 オルガノポリシロキサン、オルガノポリシロキサン組成物、オルガノポリシロキサンの製造方法、硬化性樹脂組成物、光半導体用封止材、光半導体用ダイボンド材、及び光半導体パッケージ
US10066059B2 (en) * 2014-10-21 2018-09-04 Nissan Chemical Industries, Ltd. Sealing material composition for LED
JP6484428B2 (ja) 2014-10-31 2019-03-13 東京応化工業株式会社 レジストパターン形成装置およびレジストパターン形成方法
JP2016092120A (ja) * 2014-10-31 2016-05-23 東京応化工業株式会社 レジストパターン形成装置およびレジストパターン形成方法
JP6487947B2 (ja) * 2015-02-04 2019-03-20 堺ディスプレイプロダクト株式会社 ポジ型感光性シロキサン組成物、アクティブマトリクス基板、表示装置、及びアクティブマトリクス基板の製造方法
JP6688003B2 (ja) * 2015-02-26 2020-04-28 旭化成株式会社 硬化性樹脂組成物及びその製造方法、並びに、光半導体用封止材、光半導体用ダイボンド材、及び光半導体パッケージ
JP6683423B2 (ja) * 2015-02-26 2020-04-22 旭化成株式会社 硬化性樹脂組成物及びその製造方法、並びに、光半導体用封止材、光半導体用ダイボンド材、及び光半導体パッケージ
JP6518548B2 (ja) 2015-08-10 2019-05-22 東京応化工業株式会社 紫外線照射装置、レジストパターン形成装置、紫外線照射方法及びレジストパターン形成方法
JPWO2024150635A1 (enExample) * 2023-01-10 2024-07-18
KR20250119620A (ko) * 2023-01-10 2025-08-07 후지필름 가부시키가이샤 약액, 약액 수용체, 패턴 형성 방법, 전자 디바이스의 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1662322B1 (en) * 2004-11-26 2017-01-11 Toray Industries, Inc. Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film
WO2009063887A1 (ja) * 2007-11-13 2009-05-22 Adeka Corporation ポジ型感光性組成物、ポジ型永久レジスト及びポジ型永久レジストの製造方法
JP4960330B2 (ja) * 2008-10-21 2012-06-27 株式会社Ａｄｅｋａ ポジ型感光性組成物及び永久レジスト
JP5336161B2 (ja) * 2008-12-11 2013-11-06 株式会社カネカ 金属酸化物微粒子含有硬化性樹脂組成物、その硬化物、及び光拡散材
JP5338532B2 (ja) * 2009-07-13 2013-11-13 Ｊｎｃ株式会社 ポジ型感光性組成物

Also Published As

Publication number Publication date
WO2012153648A1 (ja) 2012-11-15
JP2012237854A (ja) 2012-12-06
CN103380400B (zh) 2016-03-30
JP5698070B2 (ja) 2015-04-08
CN103380400A (zh) 2013-10-30
TW201250390A (en) 2012-12-16
KR20140006855A (ko) 2014-01-16

Similar Documents

Publication Publication Date Title
TWI530761B (zh) A positive type photosensitive composition and a hardened product thereof
TWI437369B (zh) A positive type photosensitive composition and a permanent resist
KR101558442B1 (ko) 포지티브형 감광성 조성물, 포지티브형 영구 레지스트 및 포지티브형 영구 레지스트의 제조 방법
TWI556062B (zh) Positive type photosensitive composition
TW201005009A (en) Polyorganosiloxane, resin composition, and patterning process
CN111148805B (zh) 正型感光性硅氧烷组合物以及使用了其的固化膜
CN108700807A (zh) 正型感光性硅氧烷组合物
JP5479993B2 (ja) ポジ型感光性組成物及び永久レジスト
TW201833191A (zh) 具備保護膜之薄膜電晶體基板及其製造方法
TW201927862A (zh) 聚矽氧烷、包含其而成之組成物、及使用其之硬化膜
CN102566279B (zh) 正型感光性树脂组合物及永久抗蚀剂
TW201934618A (zh) 感光性矽氧烷組成物、及使用其之圖案形成方法
TWI772411B (zh) 正型感光性矽氧烷組成物、及使用其所形成之硬化膜
JP5666266B2 (ja) ポジ型感光性樹脂組成物及び永久レジスト
CN110546566A (zh) 正型感光性硅氧烷组合物以及使用其而形成的固化膜
KR20120056773A (ko) 포지티브형 감광성 수지 조성물 및 영구 레지스트

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees