CN103328688B - 具有改进的选择性的二氧化硅蒸汽蚀刻 - Google Patents

具有改进的选择性的二氧化硅蒸汽蚀刻 Download PDF

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Publication number
CN103328688B
CN103328688B CN201280006276.XA CN201280006276A CN103328688B CN 103328688 B CN103328688 B CN 103328688B CN 201280006276 A CN201280006276 A CN 201280006276A CN 103328688 B CN103328688 B CN 103328688B
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China
Prior art keywords
silicon dioxide
etching
vapor
silicon nitride
sio
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CN201280006276.XA
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English (en)
Chinese (zh)
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CN103328688A (zh
Inventor
安东尼·奥哈拉
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Memsstar Ltd
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Memsstar Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00531—Dry etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00595—Control etch selectivity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • Formation Of Insulating Films (AREA)
CN201280006276.XA 2011-01-24 2012-01-24 具有改进的选择性的二氧化硅蒸汽蚀刻 Active CN103328688B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1101188.9A GB2487716B (en) 2011-01-24 2011-01-24 Vapour Etch of Silicon Dioxide with Improved Selectivity
GB1101188.9 2011-01-24
PCT/GB2012/050144 WO2012101431A1 (en) 2011-01-24 2012-01-24 Vapour etch of silicon dioxide with improved selectivity

Publications (2)

Publication Number Publication Date
CN103328688A CN103328688A (zh) 2013-09-25
CN103328688B true CN103328688B (zh) 2016-03-23

Family

ID=43769521

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280006276.XA Active CN103328688B (zh) 2011-01-24 2012-01-24 具有改进的选择性的二氧化硅蒸汽蚀刻

Country Status (9)

Country Link
US (1) US10354884B2 (https=)
EP (1) EP2668312B8 (https=)
JP (1) JP5864612B2 (https=)
KR (1) KR101863178B1 (https=)
CN (1) CN103328688B (https=)
DK (1) DK2668312T3 (https=)
ES (1) ES2767108T3 (https=)
GB (1) GB2487716B (https=)
WO (1) WO2012101431A1 (https=)

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JP2016025195A (ja) * 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
CN105632918A (zh) * 2014-10-30 2016-06-01 中国科学院微电子研究所 一种FinFet器件源漏外延前自然氧化层的去除方法
CN104316577B (zh) * 2014-10-31 2016-12-07 中国矿业大学 一种基于倒装焊封装的甲烷传感器及其制备方法与应用
JP6530289B2 (ja) * 2015-09-11 2019-06-12 東芝メモリ株式会社 分析前処理装置
WO2017176027A1 (ko) * 2016-04-05 2017-10-12 주식회사 테스 실리콘산화막의 선택적 식각 방법
US10497579B2 (en) * 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
CN108847391B (zh) * 2018-06-01 2021-06-08 北京北方华创微电子装备有限公司 一种非等离子干法刻蚀方法
CN110718459A (zh) * 2018-07-13 2020-01-21 北京北方华创微电子装备有限公司 非等离子体刻蚀方法及刻蚀设备
GB2580858B (en) * 2018-09-07 2021-07-21 Memsstar Ltd A method for detecting defects in thin film layers
EP4056000A4 (en) 2019-11-06 2024-05-29 Ttm Technologies Inc. SYSTEMS AND METHODS FOR REMOVING UNWANTED METAL FROM PRINTED CIRCUIT BOARD VIAS
GB202117751D0 (en) 2019-11-14 2022-01-26 Memsstar Ltd Method of manufacturing a microstructure
CN113785382B (zh) * 2020-04-10 2023-10-27 株式会社日立高新技术 蚀刻方法
JP7312160B2 (ja) * 2020-12-28 2023-07-20 株式会社アルバック エッチング装置及びエッチング方法
US11581242B2 (en) * 2021-01-14 2023-02-14 Tokyo Electron Limited Integrated high efficiency gate on gate cooling
GB2606747B (en) 2021-05-19 2024-11-20 Memsstar Ltd Method of manufacturing a microstructure
EP4219391A1 (de) 2022-01-28 2023-08-02 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Durchkontaktierung zum betreiben eines mems-bauteiles in einer hermetischen kavität
GB2629555A (en) 2023-01-25 2024-11-06 Memsstar Ltd Method of manufacturing a microstructure
US20250246437A1 (en) * 2024-01-26 2025-07-31 Tokyo Electron Limited Selective etching in semiconductor devices

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WO2008015434A1 (en) * 2006-08-02 2008-02-07 Point 35 Microstructures Limited Method of etching a sacrificial silicon oxide layer

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WO2008015434A1 (en) * 2006-08-02 2008-02-07 Point 35 Microstructures Limited Method of etching a sacrificial silicon oxide layer

Also Published As

Publication number Publication date
DK2668312T3 (da) 2020-02-17
ES2767108T3 (es) 2020-06-16
WO2012101431A1 (en) 2012-08-02
GB2487716A (en) 2012-08-08
GB201101188D0 (en) 2011-03-09
KR101863178B1 (ko) 2018-05-31
JP5864612B2 (ja) 2016-02-17
CN103328688A (zh) 2013-09-25
EP2668312B8 (en) 2019-12-25
US10354884B2 (en) 2019-07-16
EP2668312A1 (en) 2013-12-04
EP2668312B1 (en) 2019-11-20
JP2014504805A (ja) 2014-02-24
US20140017901A1 (en) 2014-01-16
KR20140039163A (ko) 2014-04-01
GB2487716B (en) 2015-06-03

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