CN103325937A - 带压电体膜的基板、压电体膜元件及其制造方法 - Google Patents
带压电体膜的基板、压电体膜元件及其制造方法 Download PDFInfo
- Publication number
- CN103325937A CN103325937A CN2013100765742A CN201310076574A CN103325937A CN 103325937 A CN103325937 A CN 103325937A CN 2013100765742 A CN2013100765742 A CN 2013100765742A CN 201310076574 A CN201310076574 A CN 201310076574A CN 103325937 A CN103325937 A CN 103325937A
- Authority
- CN
- China
- Prior art keywords
- piezoelectric body
- body film
- substrate
- film
- reflectance spectrum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 98
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000000034 method Methods 0.000 claims abstract description 43
- 230000002093 peripheral effect Effects 0.000 claims abstract description 25
- 238000000985 reflectance spectrum Methods 0.000 claims description 90
- 238000002310 reflectometry Methods 0.000 claims description 61
- 230000003746 surface roughness Effects 0.000 claims description 23
- 239000011734 sodium Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 7
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 abstract 3
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 304
- 230000003287 optical effect Effects 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 24
- 239000013078 crystal Substances 0.000 description 13
- 238000004626 scanning electron microscopy Methods 0.000 description 12
- 239000011230 binding agent Substances 0.000 description 6
- 238000003556 assay Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000205 computational method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 oxide skin Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-066425 | 2012-03-22 | ||
JP2012066425A JP2013197553A (ja) | 2012-03-22 | 2012-03-22 | 圧電体膜付き基板、圧電体膜素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103325937A true CN103325937A (zh) | 2013-09-25 |
CN103325937B CN103325937B (zh) | 2017-03-01 |
Family
ID=49194576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310076574.2A Active CN103325937B (zh) | 2012-03-22 | 2013-03-11 | 带压电体膜的基板、压电体膜元件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9368713B2 (zh) |
JP (1) | JP2013197553A (zh) |
CN (1) | CN103325937B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108352442A (zh) * | 2015-09-15 | 2018-07-31 | 日本碍子株式会社 | 复合基板及压电基板的厚度趋势推定方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101443015B1 (ko) * | 2012-08-17 | 2014-09-22 | 엔지케이 인슐레이터 엘티디 | 복합 기판, 탄성 표면파 디바이스 및 복합 기판의 제조방법 |
KR20160013518A (ko) * | 2013-05-21 | 2016-02-04 | 엔지케이 인슐레이터 엘티디 | 압전 디바이스의 제조 방법, 압전 디바이스, 및 압전 자립 기판 |
JP6417849B2 (ja) * | 2014-10-27 | 2018-11-07 | 株式会社村田製作所 | 圧電共振器、及び圧電共振器の製造方法 |
JP6097896B1 (ja) * | 2015-09-15 | 2017-03-15 | 日本碍子株式会社 | 複合基板及び圧電基板の厚み傾向推定方法 |
WO2017169470A1 (ja) * | 2016-03-29 | 2017-10-05 | コニカミノルタ株式会社 | インクジェットヘッドおよびインクジェットプリンタ |
US10618285B2 (en) * | 2016-06-17 | 2020-04-14 | Canon Kabushiki Kaisha | Piezoelectric substrate and method of manufacturing the piezoelectric substrate, and liquid ejection head |
JP6790749B2 (ja) * | 2016-11-16 | 2020-11-25 | セイコーエプソン株式会社 | 圧電素子及び圧電素子応用デバイス |
JP7352347B2 (ja) * | 2018-12-07 | 2023-09-28 | 住友化学株式会社 | 圧電積層体、圧電素子および圧電積層体の製造方法 |
JP7320091B2 (ja) * | 2021-02-10 | 2023-08-02 | 住友化学株式会社 | 圧電薄膜付き積層基板、圧電薄膜付き積層基板の製造方法、圧電薄膜素子、スパッタリングターゲット材、およびスパッタリングターゲット材の製造方法 |
CN117084002A (zh) * | 2021-03-30 | 2023-11-17 | 富士胶片株式会社 | 压电元件及压电元件的制造方法 |
WO2022209716A1 (ja) * | 2021-03-30 | 2022-10-06 | 富士フイルム株式会社 | 圧電素子及び圧電素子の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1556914A (zh) * | 2001-09-21 | 2004-12-22 | Kmac株式会社 | 利用二维反射计测量多层薄膜的厚度轮廓和折射率分布的装置及其测量方法 |
CN101414656A (zh) * | 2007-10-15 | 2009-04-22 | 日立电线株式会社 | 带有压电薄膜的基板 |
US20090236944A1 (en) * | 2006-12-22 | 2009-09-24 | Hitachi Cable, Ltd. | Piezoelectric thin film element, and an actuator and a sensor fabricated by using the same |
CN101931046A (zh) * | 2009-06-22 | 2010-12-29 | 日立电线株式会社 | 压电性薄膜元件及压电性薄膜元件的制造方法、压电薄膜设备 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06331320A (ja) * | 1993-05-18 | 1994-12-02 | Toshiba Corp | 膜厚測定装置 |
JPH0894648A (ja) * | 1994-09-27 | 1996-04-12 | Nikon Corp | 近接場走査型顕微鏡用プローブ |
JP3534632B2 (ja) * | 1998-12-22 | 2004-06-07 | シャープ株式会社 | 膜厚測定方法 |
JP2006173377A (ja) * | 2004-12-16 | 2006-06-29 | Nikon Corp | 光学部品及び投影露光装置 |
JP4735840B2 (ja) | 2005-12-06 | 2011-07-27 | セイコーエプソン株式会社 | 圧電体積層体、表面弾性波素子、薄膜圧電共振子および圧電アクチュエータ |
EP2124269B1 (en) * | 2007-02-20 | 2013-05-08 | NGK Insulators, Ltd. | Piezoelectric device |
JP2010161330A (ja) | 2008-12-08 | 2010-07-22 | Hitachi Cable Ltd | 圧電薄膜素子 |
US8375538B2 (en) * | 2009-03-27 | 2013-02-19 | Ngk Insulators, Ltd. | Method for manufacturing piezoelectric actuator |
-
2012
- 2012-03-22 JP JP2012066425A patent/JP2013197553A/ja active Pending
-
2013
- 2013-03-11 CN CN201310076574.2A patent/CN103325937B/zh active Active
- 2013-03-12 US US13/796,243 patent/US9368713B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1556914A (zh) * | 2001-09-21 | 2004-12-22 | Kmac株式会社 | 利用二维反射计测量多层薄膜的厚度轮廓和折射率分布的装置及其测量方法 |
US20090236944A1 (en) * | 2006-12-22 | 2009-09-24 | Hitachi Cable, Ltd. | Piezoelectric thin film element, and an actuator and a sensor fabricated by using the same |
CN101414656A (zh) * | 2007-10-15 | 2009-04-22 | 日立电线株式会社 | 带有压电薄膜的基板 |
CN101931046A (zh) * | 2009-06-22 | 2010-12-29 | 日立电线株式会社 | 压电性薄膜元件及压电性薄膜元件的制造方法、压电薄膜设备 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108352442A (zh) * | 2015-09-15 | 2018-07-31 | 日本碍子株式会社 | 复合基板及压电基板的厚度趋势推定方法 |
CN108352442B (zh) * | 2015-09-15 | 2021-07-20 | 日本碍子株式会社 | 复合基板及压电基板的厚度趋势推定方法 |
Also Published As
Publication number | Publication date |
---|---|
US20130249354A1 (en) | 2013-09-26 |
CN103325937B (zh) | 2017-03-01 |
JP2013197553A (ja) | 2013-09-30 |
US9368713B2 (en) | 2016-06-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103325937A (zh) | 带压电体膜的基板、压电体膜元件及其制造方法 | |
JP5035378B2 (ja) | 圧電薄膜素子及びその製造方法、並びに圧電薄膜デバイス | |
US8058779B2 (en) | Piezoelectric thin film element | |
Hossain et al. | Structural and physical properties of NbO 2 and Nb 2 O 5 thin films prepared by magnetron sputtering | |
US9893266B2 (en) | Piezoelectric film element, and piezoelectric film device including piezoelectric film including alkali niobate-based perovskite structure | |
JP5035374B2 (ja) | 圧電薄膜素子及びそれを備えた圧電薄膜デバイス | |
US8866367B2 (en) | Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making | |
JP5808262B2 (ja) | 圧電体素子及び圧電体デバイス | |
US7911927B2 (en) | Layered Bi compound nanoplate array of such nanoplates, their making methods and devices using them | |
JP5471988B2 (ja) | 圧電体薄膜ウェハの製造方法、圧電体薄膜素子及び圧電体薄膜デバイス、並びに圧電体薄膜ウェハの加工方法 | |
US10312428B2 (en) | Piezoelectric thin film, piezoelectric thin film device, target, and methods for manufacturing piezoelectric thin film and piezoelectric thin film device | |
JP2011233817A (ja) | 圧電体素子、その製造方法、及び圧電体デバイス | |
CN102823007B (zh) | 压电薄膜器件及其制造方法以及压电薄膜装置 | |
JP5403281B2 (ja) | 圧電体薄膜の加工方法 | |
JP2009049355A (ja) | 圧電薄膜素子 | |
JP2010135669A (ja) | 薄膜圧電体付き基板、薄膜圧電体素子、薄膜圧電体デバイスおよび薄膜圧電体付き基板の製造方法 | |
Mavlyanov et al. | Study of the optical properties of lead zirconate–titanate layers obtained by magnetron sputtering | |
US20240114793A1 (en) | Piezoelectric element and actuator | |
WO2011118093A1 (ja) | 圧電薄膜素子及びそれを備えた圧電薄膜デバイス | |
JP2012059909A (ja) | 圧電体薄膜の加工方法 | |
Sinno | ZnO thin-film optimization towards the fabrication of high-frequency ultrasound transducers | |
Bastani | Ferroelectric thin and ultrathin films for MEMS applications | |
WO2021040614A1 (en) | Electromechanical responsive film, stacked arrangement and methods of forming the same | |
Cardoletti et al. | {001}-Textured Nb-Doped Pb (Zr, Ti) O 3 Thin Films on Stainless Steel by Pulsed Laser Deposition | |
Nishida et al. | Investigation of Oxygen vacancies in Micro-patterned PZT Thin Films using Raman spectroscopy |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: HITACHI METALS, LTD. Free format text: FORMER OWNER: HITACHI CABLE CO., LTD. Effective date: 20140324 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140324 Address after: Tokyo, Japan, Japan Applicant after: Hitachi Metals Co., Ltd. Address before: Tokyo, Japan, Japan Applicant before: Hitachi Cable Co., Ltd. |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SCIOCS COMPANY LIMITED Free format text: FORMER OWNER: HITACHI METALS, LTD. Effective date: 20150810 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150810 Address after: Ibaraki Applicant after: Hitachi Cable Address before: Tokyo, Japan, Japan Applicant before: Hitachi Metals Co., Ltd. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160215 Address after: Tokyo, Japan, Japan Applicant after: Sumitomo Chemical Co., Ltd. Address before: Ibaraki Applicant before: Hitachi Cable |
|
GR01 | Patent grant | ||
GR01 | Patent grant |