CN103325937B - 带压电体膜的基板、压电体膜元件及其制造方法 - Google Patents
带压电体膜的基板、压电体膜元件及其制造方法 Download PDFInfo
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- CN103325937B CN103325937B CN201310076574.2A CN201310076574A CN103325937B CN 103325937 B CN103325937 B CN 103325937B CN 201310076574 A CN201310076574 A CN 201310076574A CN 103325937 B CN103325937 B CN 103325937B
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- 239000000758 substrate Substances 0.000 title claims abstract description 104
- 238000000034 method Methods 0.000 title claims abstract description 53
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- 230000002093 peripheral effect Effects 0.000 claims abstract description 30
- 230000003746 surface roughness Effects 0.000 claims description 22
- 239000011734 sodium Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000005286 illumination Methods 0.000 claims description 8
- 230000002452 interceptive effect Effects 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims description 4
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical group [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 299
- 230000003287 optical effect Effects 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 24
- 239000013078 crystal Substances 0.000 description 12
- 238000002310 reflectometry Methods 0.000 description 8
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- 239000010409 thin film Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910002370 SrTiO3 Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- CVOFKRWYWCSDMA-UHFFFAOYSA-N 2-chloro-n-(2,6-diethylphenyl)-n-(methoxymethyl)acetamide;2,6-dinitro-n,n-dipropyl-4-(trifluoromethyl)aniline Chemical compound CCC1=CC=CC(CC)=C1N(COC)C(=O)CCl.CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O CVOFKRWYWCSDMA-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910002353 SrRuO3 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000205 computational method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 239000002184 metal Substances 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-066425 | 2012-03-22 | ||
JP2012066425A JP2013197553A (ja) | 2012-03-22 | 2012-03-22 | 圧電体膜付き基板、圧電体膜素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103325937A CN103325937A (zh) | 2013-09-25 |
CN103325937B true CN103325937B (zh) | 2017-03-01 |
Family
ID=49194576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310076574.2A Active CN103325937B (zh) | 2012-03-22 | 2013-03-11 | 带压电体膜的基板、压电体膜元件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9368713B2 (zh) |
JP (1) | JP2013197553A (zh) |
CN (1) | CN103325937B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2736169B1 (en) * | 2012-08-17 | 2016-09-14 | NGK Insulators, Ltd. | Composite substrate, elastic surface wave device, and method for producing composite substrate |
JPWO2014188842A1 (ja) * | 2013-05-21 | 2017-02-23 | 日本碍子株式会社 | 圧電デバイスの製造方法,及び圧電自立基板 |
JP6417849B2 (ja) * | 2014-10-27 | 2018-11-07 | 株式会社村田製作所 | 圧電共振器、及び圧電共振器の製造方法 |
JP6097896B1 (ja) * | 2015-09-15 | 2017-03-15 | 日本碍子株式会社 | 複合基板及び圧電基板の厚み傾向推定方法 |
TWI625516B (zh) * | 2015-09-15 | 2018-06-01 | Ngk Insulators Ltd | 複合基板及壓電基板的厚度傾向推定方法 |
WO2017169470A1 (ja) * | 2016-03-29 | 2017-10-05 | コニカミノルタ株式会社 | インクジェットヘッドおよびインクジェットプリンタ |
US10618285B2 (en) * | 2016-06-17 | 2020-04-14 | Canon Kabushiki Kaisha | Piezoelectric substrate and method of manufacturing the piezoelectric substrate, and liquid ejection head |
JP6790749B2 (ja) * | 2016-11-16 | 2020-11-25 | セイコーエプソン株式会社 | 圧電素子及び圧電素子応用デバイス |
JP7352347B2 (ja) * | 2018-12-07 | 2023-09-28 | 住友化学株式会社 | 圧電積層体、圧電素子および圧電積層体の製造方法 |
JP7320091B2 (ja) * | 2021-02-10 | 2023-08-02 | 住友化学株式会社 | 圧電薄膜付き積層基板、圧電薄膜付き積層基板の製造方法、圧電薄膜素子、スパッタリングターゲット材、およびスパッタリングターゲット材の製造方法 |
CN117084003A (zh) * | 2021-03-30 | 2023-11-17 | 富士胶片株式会社 | 压电元件及压电元件的制造方法 |
EP4318621A4 (en) * | 2021-03-30 | 2024-09-11 | Fujifilm Corp | PIEZOELECTRIC ELEMENT AND METHOD FOR PRODUCING A PIEZOELECTRIC ELEMENT |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1556914A (zh) * | 2001-09-21 | 2004-12-22 | Kmac株式会社 | 利用二维反射计测量多层薄膜的厚度轮廓和折射率分布的装置及其测量方法 |
CN101414656A (zh) * | 2007-10-15 | 2009-04-22 | 日立电线株式会社 | 带有压电薄膜的基板 |
CN101931046A (zh) * | 2009-06-22 | 2010-12-29 | 日立电线株式会社 | 压电性薄膜元件及压电性薄膜元件的制造方法、压电薄膜设备 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06331320A (ja) * | 1993-05-18 | 1994-12-02 | Toshiba Corp | 膜厚測定装置 |
JPH0894648A (ja) * | 1994-09-27 | 1996-04-12 | Nikon Corp | 近接場走査型顕微鏡用プローブ |
JP3534632B2 (ja) * | 1998-12-22 | 2004-06-07 | シャープ株式会社 | 膜厚測定方法 |
JP2006173377A (ja) * | 2004-12-16 | 2006-06-29 | Nikon Corp | 光学部品及び投影露光装置 |
JP4735840B2 (ja) | 2005-12-06 | 2011-07-27 | セイコーエプソン株式会社 | 圧電体積層体、表面弾性波素子、薄膜圧電共振子および圧電アクチュエータ |
JP2008159807A (ja) * | 2006-12-22 | 2008-07-10 | Hitachi Cable Ltd | 圧電薄膜素子及び圧電薄膜素子を用いて製造したアクチュエータとセンサ |
JP5295945B2 (ja) * | 2007-02-20 | 2013-09-18 | 日本碍子株式会社 | 圧電/電歪素子 |
JP2010161330A (ja) * | 2008-12-08 | 2010-07-22 | Hitachi Cable Ltd | 圧電薄膜素子 |
JP2010251726A (ja) * | 2009-03-27 | 2010-11-04 | Ngk Insulators Ltd | 圧電アクチュエータの製造方法 |
-
2012
- 2012-03-22 JP JP2012066425A patent/JP2013197553A/ja active Pending
-
2013
- 2013-03-11 CN CN201310076574.2A patent/CN103325937B/zh active Active
- 2013-03-12 US US13/796,243 patent/US9368713B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1556914A (zh) * | 2001-09-21 | 2004-12-22 | Kmac株式会社 | 利用二维反射计测量多层薄膜的厚度轮廓和折射率分布的装置及其测量方法 |
CN101414656A (zh) * | 2007-10-15 | 2009-04-22 | 日立电线株式会社 | 带有压电薄膜的基板 |
CN101931046A (zh) * | 2009-06-22 | 2010-12-29 | 日立电线株式会社 | 压电性薄膜元件及压电性薄膜元件的制造方法、压电薄膜设备 |
Also Published As
Publication number | Publication date |
---|---|
US20130249354A1 (en) | 2013-09-26 |
JP2013197553A (ja) | 2013-09-30 |
US9368713B2 (en) | 2016-06-14 |
CN103325937A (zh) | 2013-09-25 |
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