CN103309169B - 检测装置、曝光装置和制造器件的方法 - Google Patents

检测装置、曝光装置和制造器件的方法 Download PDF

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Publication number
CN103309169B
CN103309169B CN201310062460.2A CN201310062460A CN103309169B CN 103309169 B CN103309169 B CN 103309169B CN 201310062460 A CN201310062460 A CN 201310062460A CN 103309169 B CN103309169 B CN 103309169B
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China
Prior art keywords
mark
wafer
target object
substrate
detecting device
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CN201310062460.2A
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Chinese (zh)
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CN103309169A (zh
Inventor
前田普教
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0608—Height gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
    • G03F9/7057—Gas flow, e.g. for focusing, leveling or gap setting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN201310062460.2A 2012-03-05 2013-02-28 检测装置、曝光装置和制造器件的方法 Active CN103309169B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-048611 2012-03-05
JP2012048611A JP6025346B2 (ja) 2012-03-05 2012-03-05 検出装置、露光装置及びデバイスを製造する方法

Publications (2)

Publication Number Publication Date
CN103309169A CN103309169A (zh) 2013-09-18
CN103309169B true CN103309169B (zh) 2016-03-02

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Country Status (4)

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US (1) US9523927B2 (https=)
JP (1) JP6025346B2 (https=)
KR (1) KR20130101458A (https=)
CN (1) CN103309169B (https=)

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JP6150490B2 (ja) * 2012-10-19 2017-06-21 キヤノン株式会社 検出装置、露光装置、それを用いたデバイスの製造方法
CN104950584B (zh) * 2014-03-25 2018-01-30 上海微电子装备（集团）股份有限公司 成像对准系统
CN107407894B (zh) 2014-12-24 2020-01-24 株式会社尼康 测量装置及测量方法、曝光装置及曝光方法、以及器件制造方法
DE102015209404B4 (de) * 2015-05-22 2018-05-03 Sirona Dental Systems Gmbh Verfahren und Kamera zur dreidimensionalen Vermessung eines dentalen Objekts
JP6552312B2 (ja) * 2015-07-16 2019-07-31 キヤノン株式会社 露光装置、露光方法、およびデバイス製造方法
JP6682263B2 (ja) * 2015-12-25 2020-04-15 キヤノン株式会社 検出装置、露光装置および物品の製造方法
JP6812661B2 (ja) * 2016-05-13 2021-01-13 Toto株式会社 水栓装置
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
JP6541733B2 (ja) * 2017-09-06 2019-07-10 キヤノン株式会社 基板配置方法
KR102120551B1 (ko) * 2018-09-14 2020-06-09 (주)오로스 테크놀로지 오버레이 측정장치
CN109188869B (zh) * 2018-09-29 2020-08-28 宁波市效实中学 一种在不透明基底上制备微结构的方法
JP2020122930A (ja) * 2019-01-31 2020-08-13 キヤノン株式会社 計測装置、露光装置及び物品の製造方法
JP7173891B2 (ja) * 2019-02-14 2022-11-16 キヤノン株式会社 計測装置、露光装置、および物品製造方法
JP7278828B2 (ja) * 2019-03-26 2023-05-22 キヤノン株式会社 成形方法、成形装置、インプリント方法、および物品の製造方法
DE102019206316A1 (de) * 2019-05-03 2020-11-05 Robert Bosch Gmbh Optisches System, insbesondere LiDAR-System, und Fahrzeug
KR102273278B1 (ko) 2019-09-10 2021-07-07 (주)오로스 테크놀로지 오버레이 측정장치
JP7356667B2 (ja) * 2019-10-25 2023-10-05 国立大学法人秋田大学 位置合わせ装置
US11784077B2 (en) 2019-12-18 2023-10-10 Micron Technology, Inc. Wafer overlay marks, overlay measurement systems, and related methods
WO2021133436A1 (en) * 2019-12-26 2021-07-01 Zeng An Andrew Tool architecture for wafer geometry measurement in semiconductor industry
JP7446131B2 (ja) * 2020-03-12 2024-03-08 キヤノン株式会社 検出装置、露光装置および物品製造方法
KR102461662B1 (ko) * 2020-07-02 2022-11-02 (주)오로스 테크놀로지 오버레이 측정장치
JP7536571B2 (ja) * 2020-09-15 2024-08-20 キオクシア株式会社 位置計測装置及び計測方法
CN112908898B (zh) * 2021-01-27 2022-09-02 长鑫存储技术有限公司 控片量测方法及量测装置
TWI804401B (zh) * 2022-07-28 2023-06-01 國立成功大學 光學量測系統

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Also Published As

Publication number Publication date
JP2013187206A (ja) 2013-09-19
CN103309169A (zh) 2013-09-18
US20130230798A1 (en) 2013-09-05
US9523927B2 (en) 2016-12-20
JP6025346B2 (ja) 2016-11-16
KR20130101458A (ko) 2013-09-13

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