CN103280497B - 用于制造光电子器件的方法以及光电子器件 - Google Patents
用于制造光电子器件的方法以及光电子器件 Download PDFInfo
- Publication number
- CN103280497B CN103280497B CN201310119419.4A CN201310119419A CN103280497B CN 103280497 B CN103280497 B CN 103280497B CN 201310119419 A CN201310119419 A CN 201310119419A CN 103280497 B CN103280497 B CN 103280497B
- Authority
- CN
- China
- Prior art keywords
- layer
- sequence
- layer sequence
- contact
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 239000000872 buffer Substances 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000000034 method Methods 0.000 claims abstract description 46
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 239000004020 conductor Substances 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 8
- 230000008646 thermal stress Effects 0.000 claims description 7
- 230000006798 recombination Effects 0.000 claims description 3
- 238000005215 recombination Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 3
- 238000010168 coupling process Methods 0.000 claims 3
- 238000005859 coupling reaction Methods 0.000 claims 3
- 230000004888 barrier function Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910002601 GaN Inorganic materials 0.000 description 17
- 150000001875 compounds Chemical class 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 230000035882 stress Effects 0.000 description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 10
- 238000003892 spreading Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- -1 nitride compound Chemical class 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- 206010063493 Premature ageing Diseases 0.000 description 1
- 208000032038 Premature aging Diseases 0.000 description 1
- 229910003363 ZnMgO Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
Landscapes
- Led Devices (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008030584A DE102008030584A1 (de) | 2008-06-27 | 2008-06-27 | Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement |
| DE102008030584.7 | 2008-06-27 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801239731A Division CN102067343B (zh) | 2008-06-27 | 2009-06-09 | 用于制造光电子器件的方法以及光电子器件 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103280497A CN103280497A (zh) | 2013-09-04 |
| CN103280497B true CN103280497B (zh) | 2016-08-03 |
Family
ID=41211955
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310119419.4A Active CN103280497B (zh) | 2008-06-27 | 2009-06-09 | 用于制造光电子器件的方法以及光电子器件 |
| CN2009801239731A Active CN102067343B (zh) | 2008-06-27 | 2009-06-09 | 用于制造光电子器件的方法以及光电子器件 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801239731A Active CN102067343B (zh) | 2008-06-27 | 2009-06-09 | 用于制造光电子器件的方法以及光电子器件 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8283191B2 (enExample) |
| EP (1) | EP2289115B1 (enExample) |
| JP (1) | JP5520942B2 (enExample) |
| KR (1) | KR101629984B1 (enExample) |
| CN (2) | CN103280497B (enExample) |
| DE (1) | DE102008030584A1 (enExample) |
| TW (1) | TWI390773B (enExample) |
| WO (1) | WO2009155897A1 (enExample) |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8471288B2 (en) * | 2009-09-15 | 2013-06-25 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layer |
| KR101039999B1 (ko) * | 2010-02-08 | 2011-06-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR100986560B1 (ko) * | 2010-02-11 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
| DE102010025320B4 (de) | 2010-06-28 | 2021-11-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
| KR101252032B1 (ko) | 2010-07-08 | 2013-04-10 | 삼성전자주식회사 | 반도체 발광소자 및 이의 제조방법 |
| KR101761385B1 (ko) | 2010-07-12 | 2017-08-04 | 엘지이노텍 주식회사 | 발광 소자 |
| KR101692410B1 (ko) * | 2010-07-26 | 2017-01-03 | 삼성전자 주식회사 | 발광소자 및 그 제조방법 |
| DE102010033137A1 (de) * | 2010-08-03 | 2012-02-09 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
| DE102010044986A1 (de) * | 2010-09-10 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips |
| KR101114191B1 (ko) * | 2010-09-17 | 2012-03-13 | 엘지이노텍 주식회사 | 발광소자 |
| KR101761386B1 (ko) * | 2010-10-06 | 2017-07-25 | 엘지이노텍 주식회사 | 발광 소자 |
| KR101730152B1 (ko) * | 2010-10-06 | 2017-04-25 | 엘지이노텍 주식회사 | 발광 소자 |
| TWI532214B (zh) | 2010-10-12 | 2016-05-01 | Ｌｇ伊諾特股份有限公司 | 發光元件及其封裝 |
| DE102011011140A1 (de) | 2011-02-14 | 2012-08-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
| JP5050109B2 (ja) | 2011-03-14 | 2012-10-17 | 株式会社東芝 | 半導体発光素子 |
| DE102011016302A1 (de) * | 2011-04-07 | 2012-10-11 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| TWI434405B (zh) | 2011-06-07 | 2014-04-11 | 國立交通大學 | 具有積體電路與發光二極體之異質整合結構及其製作方法 |
| KR101880445B1 (ko) * | 2011-07-14 | 2018-07-24 | 엘지이노텍 주식회사 | 발광소자, 발광소자 제조방법, 발광소자 패키지, 및 라이트 유닛 |
| CN103000777B (zh) * | 2011-09-15 | 2018-08-07 | 晶元光电股份有限公司 | 发光元件 |
| KR101827975B1 (ko) | 2011-10-10 | 2018-03-29 | 엘지이노텍 주식회사 | 발광소자 |
| CN103050593A (zh) * | 2011-10-17 | 2013-04-17 | 大连美明外延片科技有限公司 | AlGaInP四元系发光二极管外延片及其生长方法 |
| EP2597687B1 (en) * | 2011-11-23 | 2016-02-03 | Imec | Method for producing a GaN LED device |
| US20150084058A1 (en) * | 2012-03-19 | 2015-03-26 | Koninklijke Philips N.V. | Light emitting device grown on a silicon substrate |
| JP5740350B2 (ja) * | 2012-05-31 | 2015-06-24 | 株式会社東芝 | 半導体発光素子 |
| WO2013182980A1 (en) * | 2012-06-07 | 2013-12-12 | Koninklijke Philips N.V. | Chip scale light emitting device with metal pillars in a molding compound formed at wafer level |
| DE102012105176B4 (de) * | 2012-06-14 | 2021-08-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
| TW201401552A (zh) * | 2012-06-19 | 2014-01-01 | High Power Optoelectronics Inc | 發光二極體的熱應力釋放結構 |
| US8552457B1 (en) * | 2012-08-07 | 2013-10-08 | High Power Opto. Inc. | Thermal stress releasing structure of a light-emitting diode |
| JP5881560B2 (ja) * | 2012-08-30 | 2016-03-09 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
| US9082692B2 (en) * | 2013-01-02 | 2015-07-14 | Micron Technology, Inc. | Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices |
| DE102013103409A1 (de) | 2013-04-05 | 2014-10-09 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und optoelektronisches Modul |
| KR102188495B1 (ko) * | 2014-01-21 | 2020-12-08 | 삼성전자주식회사 | 반도체 발광소자의 제조 방법 |
| JP5788046B2 (ja) * | 2014-04-03 | 2015-09-30 | 株式会社東芝 | 半導体発光素子 |
| KR102163967B1 (ko) * | 2014-04-16 | 2020-10-12 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| CN106165128B (zh) * | 2014-04-07 | 2018-11-09 | Lg 伊诺特有限公司 | 发光元件和照明系统 |
| KR102163956B1 (ko) * | 2014-04-07 | 2020-10-12 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| KR102153125B1 (ko) * | 2014-06-11 | 2020-09-07 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| DE102014108373A1 (de) * | 2014-06-13 | 2015-12-17 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102015105509A1 (de) * | 2015-04-10 | 2016-10-13 | Osram Opto Semiconductors Gmbh | Bauelement und Verfahren zur Herstellung eines Bauelements |
| DE102015111046B9 (de) * | 2015-07-08 | 2022-09-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
| KR102432015B1 (ko) * | 2015-11-09 | 2022-08-12 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 자외선 발광소자 및 발광소자 패키지 |
| CN105470359B (zh) * | 2015-12-31 | 2018-05-08 | 天津三安光电有限公司 | 具有内嵌式电极结构的高功率led结构及其制备方法 |
| DE102017103041B4 (de) | 2017-02-15 | 2023-12-14 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement |
| US11527519B2 (en) | 2017-11-27 | 2022-12-13 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
| US12100696B2 (en) | 2017-11-27 | 2024-09-24 | Seoul Viosys Co., Ltd. | Light emitting diode for display and display apparatus having the same |
| US10892297B2 (en) | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode (LED) stack for a display |
| US11282981B2 (en) | 2017-11-27 | 2022-03-22 | Seoul Viosys Co., Ltd. | Passivation covered light emitting unit stack |
| US10892296B2 (en) * | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
| US10748881B2 (en) | 2017-12-05 | 2020-08-18 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| US10886327B2 (en) | 2017-12-14 | 2021-01-05 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
| US11552057B2 (en) | 2017-12-20 | 2023-01-10 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
| US11522006B2 (en) | 2017-12-21 | 2022-12-06 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
| US11552061B2 (en) | 2017-12-22 | 2023-01-10 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| US11114499B2 (en) | 2018-01-02 | 2021-09-07 | Seoul Viosys Co., Ltd. | Display device having light emitting stacked structure |
| US10784240B2 (en) | 2018-01-03 | 2020-09-22 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| DE102019106521A1 (de) * | 2019-03-14 | 2020-09-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Aufwachsstruktur für ein Strahlung emittierendes Halbleiterbauelement und Strahlung emittierendes Halbleiterbauelement |
| US11296266B2 (en) * | 2019-11-26 | 2022-04-05 | Facebook Technologies, Llc | LED array having transparent substrate with conductive layer for enhanced current spread |
| EP4419949A1 (en) * | 2022-12-30 | 2024-08-28 | Shanghai United Imaging Healthcare Co., Ltd. | Photon-counting detectors for detecting radiation rays |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101027795A (zh) * | 2004-09-27 | 2007-08-29 | 松下电器产业株式会社 | 半导体发光元件及其制造方法和安装方法、发光器件 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6121638A (en) * | 1995-09-12 | 2000-09-19 | Kabushiki Kaisha Toshiba | Multi-layer structured nitride-based semiconductor devices |
| US5763941A (en) * | 1995-10-24 | 1998-06-09 | Tessera, Inc. | Connection component with releasable leads |
| EP2169733B1 (de) * | 1997-09-29 | 2017-07-19 | OSRAM Opto Semiconductors GmbH | Halbleiterlichtquelle |
| US6465744B2 (en) * | 1998-03-27 | 2002-10-15 | Tessera, Inc. | Graded metallic leads for connection to microelectronic elements |
| DE10020464A1 (de) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis |
| US6878563B2 (en) * | 2000-04-26 | 2005-04-12 | Osram Gmbh | Radiation-emitting semiconductor element and method for producing the same |
| US20020017652A1 (en) | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
| DE10147886B4 (de) * | 2001-09-28 | 2006-07-13 | Osram Opto Semiconductors Gmbh | Lumineszenzdiode mit vergrabenem Kontakt und Herstellungsverfahren |
| US6828596B2 (en) * | 2002-06-13 | 2004-12-07 | Lumileds Lighting U.S., Llc | Contacting scheme for large and small area semiconductor light emitting flip chip devices |
| US7115896B2 (en) | 2002-12-04 | 2006-10-03 | Emcore Corporation | Semiconductor structures for gallium nitride-based devices |
| US7230292B2 (en) * | 2003-08-05 | 2007-06-12 | Micron Technology, Inc. | Stud electrode and process for making same |
| TWI317180B (en) * | 2004-02-20 | 2009-11-11 | Osram Opto Semiconductors Gmbh | Optoelectronic component, device with several optoelectronic components and method to produce an optoelectronic component |
| US20050205883A1 (en) * | 2004-03-19 | 2005-09-22 | Wierer Jonathan J Jr | Photonic crystal light emitting device |
| DE102005016592A1 (de) * | 2004-04-14 | 2005-11-24 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
| JP4826703B2 (ja) * | 2004-09-29 | 2011-11-30 | サンケン電気株式会社 | 半導体素子の形成に使用するための板状基体 |
| US20060124956A1 (en) * | 2004-12-13 | 2006-06-15 | Hui Peng | Quasi group III-nitride substrates and methods of mass production of the same |
| US7413918B2 (en) * | 2005-01-11 | 2008-08-19 | Semileds Corporation | Method of making a light emitting diode |
| CN100372137C (zh) | 2005-05-27 | 2008-02-27 | 晶能光电（江西）有限公司 | 具有上下电极结构的铟镓铝氮发光器件及其制造方法 |
| US9406505B2 (en) * | 2006-02-23 | 2016-08-02 | Allos Semiconductors Gmbh | Nitride semiconductor component and process for its production |
| DE102006008929A1 (de) * | 2006-02-23 | 2007-08-30 | Azzurro Semiconductors Ag | Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung |
| EP1883141B1 (de) * | 2006-07-27 | 2017-05-24 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht |
| DE102006046237A1 (de) * | 2006-07-27 | 2008-01-31 | Osram Opto Semiconductors Gmbh | Halbleiter-Schichtstruktur mit Übergitter |
| DE102006043400A1 (de) * | 2006-09-15 | 2008-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| US7697584B2 (en) * | 2006-10-02 | 2010-04-13 | Philips Lumileds Lighting Company, Llc | Light emitting device including arrayed emitters defined by a photonic crystal |
-
2008
- 2008-06-27 DE DE102008030584A patent/DE102008030584A1/de not_active Withdrawn
-
2009
- 2009-06-09 EP EP09768821.2A patent/EP2289115B1/de active Active
- 2009-06-09 KR KR1020117000338A patent/KR101629984B1/ko active Active
- 2009-06-09 CN CN201310119419.4A patent/CN103280497B/zh active Active
- 2009-06-09 CN CN2009801239731A patent/CN102067343B/zh active Active
- 2009-06-09 JP JP2011515085A patent/JP5520942B2/ja active Active
- 2009-06-09 WO PCT/DE2009/000810 patent/WO2009155897A1/de not_active Ceased
- 2009-06-09 US US12/990,243 patent/US8283191B2/en active Active
- 2009-06-25 TW TW098121295A patent/TWI390773B/zh not_active IP Right Cessation
-
2012
- 2012-08-30 US US13/598,896 patent/US8956897B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101027795A (zh) * | 2004-09-27 | 2007-08-29 | 松下电器产业株式会社 | 半导体发光元件及其制造方法和安装方法、发光器件 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110030542A (ko) | 2011-03-23 |
| JP2011525708A (ja) | 2011-09-22 |
| CN103280497A (zh) | 2013-09-04 |
| TWI390773B (zh) | 2013-03-21 |
| KR101629984B1 (ko) | 2016-06-13 |
| CN102067343A (zh) | 2011-05-18 |
| EP2289115A1 (de) | 2011-03-02 |
| US8956897B2 (en) | 2015-02-17 |
| WO2009155897A1 (de) | 2009-12-30 |
| CN102067343B (zh) | 2013-05-08 |
| TW201004000A (en) | 2010-01-16 |
| EP2289115B1 (de) | 2017-08-09 |
| DE102008030584A1 (de) | 2009-12-31 |
| US20120322186A1 (en) | 2012-12-20 |
| US8283191B2 (en) | 2012-10-09 |
| JP5520942B2 (ja) | 2014-06-11 |
| US20110104836A1 (en) | 2011-05-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103280497B (zh) | 用于制造光电子器件的方法以及光电子器件 | |
| US8664682B2 (en) | Semiconductor light emitting device and method of fabricating the same | |
| KR20210006373A (ko) | 다이오드 매트릭스를 갖는 광전자 디바이스를 제조하기 위한 프로세스 | |
| JP2013102240A (ja) | 二重ヘテロ構造の発光領域を有するｉｉｉ族窒化物発光デバイス | |
| JP2008527731A (ja) | オプトエレクトロニクス用基板の作製方法 | |
| KR20100068839A (ko) | 발광 소자의 제조 방법 | |
| JP2012500479A (ja) | 両面不動態化を伴う半導体発光デバイスを製造するための方法 | |
| US8633508B2 (en) | Semiconductor element and a production method therefor | |
| US7772600B2 (en) | Light emitting device having zener diode therein and method of fabricating the same | |
| KR20090076163A (ko) | 질화물 반도체 발광소자 제조방법 및 이에 의해 제조된질화물 반도체 발광소자 | |
| KR101072200B1 (ko) | 발광소자 및 그 제조방법 | |
| CN101601142A (zh) | 半导体芯片和用于制造半导体芯片的方法 | |
| WO2007094613A1 (en) | Semiconductor light emitting device and method for manufacturing thereof | |
| KR101525913B1 (ko) | 수직구조 발광다이오드 및 이의 제조방법 | |
| TW202119649A (zh) | 發光元件及其製造方法 | |
| KR101189163B1 (ko) | 발광 다이오드의 제조방법 | |
| KR101072199B1 (ko) | 발광소자 및 그 제조방법 | |
| KR100730756B1 (ko) | 제너 다이오드를 구비하는 발광소자 및 그것을 제조하는방법 | |
| KR101681573B1 (ko) | 발광소자의 제조방법 | |
| KR100700531B1 (ko) | 발광 다이오드 및 그 제조 방법 | |
| CN116472653A (zh) | 谐振腔发光二极管的制备方法 | |
| KR20120045838A (ko) | 반도체 발광소자용 복합기판 및 이를 이용한 반도체 발광소자의 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |