CN103201863A - 用于发光器件的岛状载体 - Google Patents

用于发光器件的岛状载体 Download PDF

Info

Publication number
CN103201863A
CN103201863A CN2011800552321A CN201180055232A CN103201863A CN 103201863 A CN103201863 A CN 103201863A CN 2011800552321 A CN2011800552321 A CN 2011800552321A CN 201180055232 A CN201180055232 A CN 201180055232A CN 103201863 A CN103201863 A CN 103201863A
Authority
CN
China
Prior art keywords
tube core
carrier element
led tube
lead frame
conductive area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011800552321A
Other languages
English (en)
Other versions
CN103201863B (zh
Inventor
Q.莫
D.P.J.范德哈格肯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of CN103201863A publication Critical patent/CN103201863A/zh
Application granted granted Critical
Publication of CN103201863B publication Critical patent/CN103201863B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements

Abstract

一种低成本的传导载体元件提供对发光器件(LED)管芯的结构支撑以及到LED管芯的电和热耦合。提供一种引线框，其包括至少一个载体元件，该载体元件被分割以形成LED管芯被附着到其的可辨别传导区域。当载体元件从框分离时，传导区域彼此电隔离。电介质可以放置在载体元件的传导区域之间。

Description

用于发光器件的岛状载体
技术领域
本发明涉及集成电路(IC)制作和组装的领域，并且具体而言涉及发光器件(LED)的制作。
背景技术
随着半导体发光器件(LED)的发光能力持续改善，它们在传统照明应用中的使用持续增长，以成本有效的方式提供可靠持久的产品的竞争压力也持续增长。由于这些器件日益增长的市场，即使LED产品的成本相对低，每个器件节约甚至几分钱都会对利润率具有显著影响。
在减小提供发光器件的单独管芯的尺寸方面，由此在减小材料成本方面持续取得进展，但是处理考虑要求管芯应安装在更大衬底上。也就是说，例如，尽管半导体制造者具有可以拾取和放置可能小至1mmx1mm的单独管芯并且提供连接到每个管芯上的接触的设备，传统上用于印刷电路制作的该设备不适合于放置或连接这种管芯。按照类似方式，发光器件经常被插入可更换项目，并且需要足够大从而被人手握住。
图1A-1B说明用于安装LED管芯110的示例衬底150。衬底150通常为陶瓷，诸如氮化铝(AlN)或氧化铝(Al2O3)，并且管芯110和衬底150的组合典型地称为陶瓷上器件(DoC)。
图1的示例LED管芯110说明使用了四个发光元件116。接触112使得能够将发光元件耦合到外部电源。在此示例中，压力夹122将管芯110保持到衬底150，并且提供到接触112的电耦合。压力夹的使用便于管芯110的更换。
垫片120使得可将衬底安装的LED器件附着到外部电源，并且例如可以用作将器件结合到印刷电路板或类似结构的结合垫片。结合垫片120提供与接触112相同的功能，但是如上文指出，显著更大以便于常见印刷电路板制作设备和技术。
衬底150还用作散逸由发光元件116产生的热量的热沉。
图1C说明可替换布置，其中LED管芯110经由焊料元件122被焊接到衬底150上的垫片120。在此示例实施例中，管芯110中的一个或多个通路115或其它内部路由部件提供到发光元件116的耦合。在图1C的示例中，上接触112也被提供，使得LED管芯可以在图1B或1C的配置中使用。
图1C的示例还说明使用LED管芯被焊接到其的热沉垫片130。此布置将典型地提供LED管芯110和衬底150之间改善的热耦合，但是通常需要位于管芯110的下表面上相应的可焊接热传递接触118。
尽管在陶瓷上放置诸如垫片120、130的导电迹线是一种成熟技术，但是存在制作具有这种垫片120、130的陶瓷衬底涉及的成本，以及由于通常用于提供这些垫片的金属的热系数和陶瓷衬底的热系数之间的失配引起的垫片120、130从衬底分离的某种风险。
发明内容
有利的是提供一种更低成本的发光产品。还有利的是提供一种具有潜在地更高可靠性和/或更长操作寿命的发光产品。还有利的是提供一种制作这种发光产品的成本有效的方法。
这些优点以及其它方面可以通过一种使用低成本传导载体元件的工艺实现，该载体元件提供对LED管芯的结构支撑以及到LED管芯的电和热耦合。提供一种引线框，其包括至少一个载体元件，该载体元件被分割以形成LED管芯被附着到其的可辨别传导区域。当载体元件从框分离时，传导区域被彼此电隔离。电介质可以放置在载体元件的传导区域之间。
附图说明
参考附图更详细地并且通过示例方式解释本发明，在附图中：
图1A-1C说明两个传统陶瓷上管芯(DoC)布置。
图2A-2B说明示例的传导载体上管芯布置。
图3说明包括载体结构的示例引线框，该载体结构包括三个可辨别传导区域。
图4说明用于提供载体基发光器件的示例流程图。
图5说明包括多个载体结构的示例引线框。
图6说明包括多个载体结构的另一示例引线框。
图7A-7C说明示例载体结构。
相同附图标记在各图中始终表示相似或对应的特征或功能。附图被包括用于说明目的并且不是旨在限制本发明的范围。
具体实施方式
在下述说明书中，出于解释而非限制的目的，阐述了诸如具体架构、接口、技术等特定细节，从而提供对本发明的构思的彻底理解。然而本领域技术人员将显见，本发明可以在背离这些特定细节的其它实施例中实践。按照类似方式，此说明书的文本是针对各图中说明的示例性实施例，并且不是旨在将所要求保护的发明限制为超出权利要求中明确包括的限制。出于简化和清楚的原因，省略了对公知器件、电路和方法的详细描述，从而不由于不必要细节而模糊本发明的说明书。
另外在下述说明书中，通常使用的材料和工艺被提到以便于更好和/或更容易理解此处给出的本发明的原理，不过本领域技术人员将认识到本发明的原理不限于这些参考。例如，…。
图2A-2B说明示例的传导载体上管芯布置。在此示例中，LED管芯110安装在导电载体结构210-220上，该载体结构既对管芯110提供结构支撑，也提供到管芯110的电和热耦合。在此示例中载体结构包括两个电导体210和一个热传递导体220。
在此示例实施例中，LED管芯110可以使用传统SMD(表面安装器件)焊料回流技术而焊接到导体210以及导体220。因为导体210是导电的，从外部源到LED管芯110的电耦合可以使用这些导体210的任何可接入的侧面或边缘来实现。按照类似方式，热耦合可以使用导体220的任何可接入的侧面或边缘来实现。
图3说明包括载体结构的示例引线框350，该载体结构包括三个可辨别传导区域，其对应于图2A-2B中的导体210、220。也就是说，引线框350包括位于一种图案中的狭缝或开口355，该图案定义用于耦合到LED管芯110的导体210、220的期望形状和放置。开口355之间的翼片357保持导体210、220被附着到整体框结构。引线框350例如可以是铜片，其足够厚(例如大于0.75mm，优选地1.5mm，取决于尺寸)，从而为图2的发光器件200提供主要结构支撑，不过可以使用其它导电材料。
为了清楚起见，术语'区域'此处被用于指将最终变为用于载体基发光器件(诸如图2A中的器件200)的期望导体的框上区域。因为这些区域和最终导体是相同的元件，在参考框上区域或者器件上导体时将使用相同的附图标记210、220。按照类似方式，因为这些导体210、220的组合形成整体载体结构，该组合将被称为载体结构210-220。
参考图4的流程图而最佳地理解此引线框350的使用。在此示例中，使用示例引线框350和LED管芯110的附图标记来描述图4，不过本领域技术人员将认识到流程不限于此具体示例。
在410，提供具有载体结构210-220的引线框350。在420，将(多个)LED管芯110放置在载体结构210-220上。典型地将一个LED管芯110放置在每个载体结构210-220上，不过可以将多个LED管芯安装在单个载体结构上。
在430，典型地使用SMD焊料回流技术，将LED管芯110附着到载体结构210-220的相应传导区域210、220，不过可以使用将LED管芯110耦合到这些区域210、220的其它手段。例如，如果LED管芯不包括通路115或者经由其底表面的其它耦合手段，可以使用传统引线结合技术将管芯上的接触112引线结合到区域210。
在一些实施例中，LED管芯110本身可以不依赖于机械接触附着到区域220，有可能用热传递膏料或物料增强以确保LED管芯110和区域220之间的高效热耦合。按照类似方式，在一些实施例中，引线框350可以至少在与LED管芯110的接触点处用金镀覆，从而确保LED管芯110和区域210之间的可靠电耦合。
在440，典型地通过锯断将载体结构210-220连接到框350其余部分的翼片357，从框350分离载体结构210-220(具有附着的LED管芯110)，由此制成图2A-2B的发光器件200。
尽管示例框350被说明为形成一个载体结构210-220，本领域技术人员将认识到多个载体结构可以被提供在单个框上，如图5和6的示例框550、650中说明。
示例框550包括图3的示例框350的复制。在此示例中，在框550中提供16个载体结构210-220，每个载体结构210-220具有附着的LED管芯110。
示例框650被设计成最小化当具有附着的LED管芯110的载体结构210-220从框移除时的废料。在此示例中，载体结构210-220交替摆置以减小框650中需要的开口355的数目，并且保持区域210、220被附着到框650的翼片357沿着锯缝660被定位，其中当载体结构210-220从框650分离时该锯缝将产生。在此示例中，将产生16个发光器件(图2中200)，但是框650的尺寸显著小于图5中框550的尺寸。
图7A-7C说明示例载体结构。在这些示例中，相对于管芯110，载体结构210-220的尺寸与图1中衬底150大约相同。为了减小由这些更大结构210-220造成的管芯110上的潜在应力，用电介质材料填充导体210、220之间的空间。以此方式，结构210-220基本上是自支撑的并且在管芯110上放置最小的应力。
可以在LED管芯110附着到载体结构210-220之前或之后，以及在载体结构210-220从框分离之前或之后，或者二者的组合，添加电介质。例如，在图7B中，利用电介质715隔离导体210，并且因此在(在将导体210保持到框的翼片的位置处)导体210从框分离之后，必须已经添加电介质715的至少部分。然而，可以在LED管芯110附着到这些导体之前填充导体210、220之间的空间。
图7C说明导体210可以提供附加功能的事实。在此示例中，导体210包括便于将器件700插入诸如印刷电路板中的孔的相应插座的销形部件710，或者包括允许器件700被更换的插头。
前文纯粹说明本发明的原理。因而将理解，本领域技术人员将能够设计各种布置；尽管没有在此处明确地描述或示出，所述布置实施本发明的原理并且因而在下述权利要求的精神和范围内。
在解释这些权利要求中应当理解：
a)措辞“包括”不排除存在指定权利要求中列出的那些元件或动作以外的元件或动作；
b)元件之前的措辞“一”("a"或"an")并不排除存在多个这种元件；
c)权利要求中的任何附图标记不限制它们的范围；
d)若干“装置”可用同一项目或硬件或软件实现的结构或功能来表示；
e)每个所公开元件可以包括硬件部分(例如包括分立的和集成的电子电路系统)、软件部分(例如计算机编程)及其任何组合；
f)硬件部分可以包括处理器，并且软件部分可以存储在非瞬态计算机可读介质上并且可以配置成致使处理器执行一个或多个所公开元件的一些或全部功能；
g)硬件部分可以包括模拟部分和数字部分之一或二者；
h)除非另外明确地说明，任何所公开的器件或其部分可组合在一起或被分离为另外部分；
i)除非明确指出，否则不意图要求特定的动作顺序序列；以及
j)术语"多个"元件包括两个或更多个所要求保护的元件，并且不暗示元件的任何具体数目范围；也就是说，多个元件可以是少至两个元件，并且可以包括数目不可计量的元件。

Claims (20)

1.一种方法，包括：
提供引线框，该引线框包括至少一个载体元件，该载体元件是传导的并且被分割以形成多个可辨别传导区域，
将至少一个LED管芯放置在该载体元件上，
将该LED管芯上的接触耦合到传导区域，以及
从该引线框分离该载体元件，从而提供每个传导区域彼此电隔离的LED器件。
2.根据权利要求1的方法，包括在可辨别传导区域之间放置电介质材料。
3.根据权利要求1的方法，其中可辨别传导区域包括：热传导区域，其配置成从该LED管芯散逸热量，以及一个或多个电极，其将该LED管芯耦合到外部能量源。
4.根据权利要求1的方法，包括依据与多个可辨别传导区域对应的图案，通过从引线框移除材料而形成引线框。
5.根据权利要求1的方法，其中多个可辨别传导区域包括阳极区域、阴极区域和热传递区域，其中阳极区域和阴极区域被提供以便于分别与LED管芯关联的阳极电极和阴极电极的耦合。
6.根据权利要求1的方法，其中耦合包括回流焊接。
7.根据权利要求1的方法，其中引线框包括铜片。
8.一种发光器件，包括：
多个载体元件，以及
附着到多个载体元件的LED管芯，
其中该载体元件提供：
        用于器件的主要结构支撑，以及
        到LED管芯的电和热耦合。
9.根据权利要求8的发光器件，包括将载体元件彼此分离的电介质材料。
10.根据权利要求8的发光器件，其中载体元件的一个或多个包括销结构，该销结构便于器件插入相应插座。
11.根据权利要求8的发光器件，其中每个载体元件包括铜。
12.根据权利要求8的发光器件，其中每个载体元件的厚度至少为0.75mm。
13.根据权利要求8的发光器件，其中LED管芯利用焊料附着到多个载体元件。
14.根据权利要求8的发光器件，其中LED管芯包括通过LED管芯的顶表面发射光的一个或多个发光元件，并且经由LED管芯的与顶表面相对的底表面上的接触，LED管芯附着到多个载体元件。
15.根据权利要求8的发光器件，其中载体元件的一个或多个经由载体元件的底表面和一个或多个边缘表面而提供到LED管芯的电耦合。
16.一种引线框，包括：
至少一个载体元件，该载体元件是传导的并且被分割以形成多个可辨别传导区域，以及
位于该载体元件上的至少一个LED管芯，其耦合到多个可辨别传导区域。
17.根据权利要求16的引线框，包括位于可辨别传导区域之间的电介质材料。
18.根据权利要求16的引线框，其中引线框是铜片。
19.根据权利要求16的引线框，其中引线框的厚度至少为0.75mm。
20.根据权利要求16的引线框，其中载体元件的一个或多个经由载体元件的底表面和一个或多个边缘表面提供到LED管芯的电耦合。
CN201180055232.1A 2010-11-19 2011-11-14 用于发光器件的岛状载体 Active CN103201863B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US41539510P 2010-11-19 2010-11-19
US61/415395 2010-11-19
US61/415,395 2010-11-19
PCT/IB2011/055063 WO2012066461A1 (en) 2010-11-19 2011-11-14 Islanded carrier for light emitting device

Publications (2)

Publication Number Publication Date
CN103201863A true CN103201863A (zh) 2013-07-10
CN103201863B CN103201863B (zh) 2016-04-13

Family

ID=45496212

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180055232.1A Active CN103201863B (zh) 2010-11-19 2011-11-14 用于发光器件的岛状载体

Country Status (8)

Country Link
US (2) US9172018B2 (zh)
EP (1) EP2641279B1 (zh)
JP (2) JP6297838B2 (zh)
CN (1) CN103201863B (zh)
BR (1) BR112013012333A2 (zh)
RU (2) RU2721101C2 (zh)
TW (3) TWI620350B (zh)
WO (1) WO2012066461A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2641279B1 (en) * 2010-11-19 2017-09-27 Koninklijke Philips N.V. Islanded carrier for light emitting device
US10043960B2 (en) * 2011-11-15 2018-08-07 Cree, Inc. Light emitting diode (LED) packages and related methods
KR101661140B1 (ko) * 2015-06-25 2016-09-29 (주)포인트엔지니어링 금속 및 비금속 접합 기판
US11677059B2 (en) 2017-04-26 2023-06-13 Samsung Electronics Co., Ltd. Light-emitting device package including a lead frame
KR102335216B1 (ko) 2017-04-26 2021-12-03 삼성전자 주식회사 발광소자 패키지

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101529604A (zh) * 2006-10-17 2009-09-09 希爱化成株式会社 上下电极型发光二极管用封装集合体及使用该集合体的发光装置的制造方法
US20100133581A1 (en) * 2008-07-31 2010-06-03 Bridgelux, Inc. Top contact led thermal management
WO2010112298A1 (de) * 2009-04-02 2010-10-07 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393177A (ja) * 1986-10-07 1988-04-23 Nec Corp 発光ダイオ−ド
JPH05129661A (ja) * 1991-10-31 1993-05-25 Iwasaki Electric Co Ltd 発光ダイオードランプ
JPH07117628B2 (ja) * 1992-07-23 1995-12-18 山一電機株式会社 光電気変換器
JP4023698B2 (ja) * 1996-11-15 2007-12-19 シチズン電子株式会社 下面電極付き側面使用電子部品の製造方法
US6335548B1 (en) * 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
JP3217322B2 (ja) * 1999-02-18 2001-10-09 日亜化学工業株式会社 チップ部品型発光素子
US6373078B1 (en) * 1999-09-28 2002-04-16 International Rectifier Corp. Microelectronic relay with upset and downset lead frames
RU2197680C1 (ru) * 2001-09-19 2003-01-27 Открытое акционерное общество "АВТОВАЗ" Светотехнический блок
US20030057421A1 (en) * 2001-09-27 2003-03-27 Tzer-Perng Chen High flux light emitting diode having flip-chip type light emitting diode chip with a transparent substrate
JP2003309293A (ja) * 2002-04-17 2003-10-31 Sony Corp 半導体発光素子パッケージ、表示装置、発光素子の除去方法及び発光素子の検査方法
DE10237084A1 (de) * 2002-08-05 2004-02-19 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektrischen Leiterrahmens und Verfahren zum Herstellen eines oberflächenmontierbaren Halbleiterbauelements
JP3910171B2 (ja) 2003-02-18 2007-04-25 シャープ株式会社 半導体発光装置、その製造方法および電子撮像装置
RU2267188C2 (ru) * 2003-06-23 2005-12-27 Федорова Галина Владимировна Светодиодное полупроводниковое устройство в корпусе для поверхностного монтажа
JP4114557B2 (ja) * 2003-06-25 2008-07-09 松下電工株式会社 発光装置
US6972438B2 (en) * 2003-09-30 2005-12-06 Cree, Inc. Light emitting diode with porous SiC substrate and method for fabricating
KR20050092300A (ko) * 2004-03-15 2005-09-21 삼성전기주식회사 고출력 발광 다이오드 패키지
JP2005302944A (ja) * 2004-04-09 2005-10-27 Tabuchi Electric Co Ltd 発光装置
DE102004029941B3 (de) * 2004-06-21 2005-12-15 Infineon Technologies Ag System zur Auswertung eines Sensorsignals
US7476913B2 (en) 2004-08-10 2009-01-13 Renesas Technology Corp. Light emitting device having a mirror portion
RU2355068C1 (ru) * 2004-12-16 2009-05-10 Сеул Семикондактор Ко., Лтд. Рамка с выводами, имеющая поддерживающее теплоотвод кольцо, способ изготовления корпуса светоизлучающего диода с ее использованием и корпус светоизлучающего диода, изготовленный этим способом
WO2006065007A1 (en) 2004-12-16 2006-06-22 Seoul Semiconductor Co., Ltd. Leadframe having a heat sink supporting ring, fabricating method of a light emitting diodepackage using the same and light emitting diodepackage fabbricated by the method
JPWO2006095834A1 (ja) * 2005-03-09 2008-08-21 旭化成エレクトロニクス株式会社 光デバイス及び光デバイスの製造方法
JP2006261519A (ja) * 2005-03-18 2006-09-28 Sharp Corp 半導体装置及びその製造方法
WO2007018098A1 (ja) * 2005-08-05 2007-02-15 Olympus Medical Systems Corp. 発光ユニット
JP2007073575A (ja) * 2005-09-05 2007-03-22 Matsushita Electric Ind Co Ltd 半導体発光装置
KR101187943B1 (ko) * 2005-09-20 2012-10-05 르네사스 일렉트로닉스 가부시키가이샤 Ｌｅｄ 광원 및 그 제조 방법
JP3117281U (ja) * 2005-09-30 2006-01-05 鼎元光電科技股▲ふん▼有限公司 効率の高いマトリックス発光ダイオード素子
JP2007109911A (ja) * 2005-10-14 2007-04-26 Renesas Technology Corp 発光ダイオードおよびその製造方法
JP2007134376A (ja) * 2005-11-08 2007-05-31 Akita Denshi Systems:Kk 発光ダイオード装置及びその製造方法
US20070228386A1 (en) * 2006-03-30 2007-10-04 Jin-Shown Shie Wire-bonding free packaging structure of light emitted diode
CA2648321A1 (en) 2006-03-31 2007-11-15 Hendrickson International Corporation Movable subframe for tractor-trailers
JP5057707B2 (ja) * 2006-06-16 2012-10-24 日亜化学工業株式会社 発光装置
WO2008047933A1 (en) * 2006-10-17 2008-04-24 C.I.Kasei Company, Limited Package assembly for upper/lower electrode light-emitting diodes and light-emitting device manufacturing method using same
JP2008258567A (ja) * 2006-11-08 2008-10-23 C I Kasei Co Ltd 発光装置および発光装置の製造方法
US7999277B2 (en) * 2006-11-08 2011-08-16 C. I. Kasei Company, Limited Light emitting device and production method of same
DE102007036226A1 (de) 2007-08-02 2009-02-05 Perkinelmer Elcos Gmbh Anbringungsstruktur für LEDs, LED-Baugruppe, LED-Baugruppensockel, Verfahren zum Ausbilden einer Anbringungsstruktur
US7652301B2 (en) * 2007-08-16 2010-01-26 Philips Lumileds Lighting Company, Llc Optical element coupled to low profile side emitting LED
JPWO2009051178A1 (ja) * 2007-10-19 2011-03-03 日本タングステン株式会社 Ｌｅｄパッケージ基板およびそれを用いたｌｅｄパッケージ
JP4758976B2 (ja) * 2007-12-03 2011-08-31 日立ケーブルプレシジョン株式会社 半導体発光素子搭載用リードフレーム及びその製造方法並びに発光装置
KR100981214B1 (ko) * 2008-01-28 2010-09-10 알티전자 주식회사 발광다이오드 패키지
JP2009224376A (ja) * 2008-03-13 2009-10-01 Toshiba Discrete Technology Kk 側面型発光装置及びその製造方法
CN101533819B (zh) * 2008-03-14 2013-01-16 旭丽电子(广州)有限公司 半导体封装构造、应用于半导体封装构造的导线架及导电件
JPWO2010035788A1 (ja) * 2008-09-25 2012-02-23 電気化学工業株式会社 発光素子搭載用基板及びその製造方法
US8288785B2 (en) * 2008-12-03 2012-10-16 Seoul Semiconductor Co., Ltd. Lead frame having light-reflecting layer, light emitting diode having the lead frame, and backlight unit having the light emitting diode
JP5368809B2 (ja) * 2009-01-19 2013-12-18 ローム株式会社 Ｌｅｄモジュールの製造方法およびｌｅｄモジュール
JP2010177329A (ja) * 2009-01-28 2010-08-12 Sharp Corp 樹脂複合リードフレームとその製造方法、及びその実装体
JP2010238833A (ja) * 2009-03-31 2010-10-21 Panasonic Corp 光半導体装置用パッケージおよび光半導体装置
KR101673913B1 (ko) * 2009-07-20 2016-11-08 삼성전자 주식회사 발광 패키지 및 그 제조 방법
CN102024882A (zh) * 2009-09-14 2011-04-20 展晶科技(深圳)有限公司 发光二极管装置及其制造方法
US8502257B2 (en) * 2009-11-05 2013-08-06 Visera Technologies Company Limited Light-emitting diode package
EP2641279B1 (en) * 2010-11-19 2017-09-27 Koninklijke Philips N.V. Islanded carrier for light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101529604A (zh) * 2006-10-17 2009-09-09 希爱化成株式会社 上下电极型发光二极管用封装集合体及使用该集合体的发光装置的制造方法
US20100133581A1 (en) * 2008-07-31 2010-06-03 Bridgelux, Inc. Top contact led thermal management
WO2010112298A1 (de) * 2009-04-02 2010-10-07 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement

Also Published As

Publication number Publication date
EP2641279A1 (en) 2013-09-25
TWI620350B (zh) 2018-04-01
RU2721101C2 (ru) 2020-05-15
JP2013543277A (ja) 2013-11-28
WO2012066461A1 (en) 2012-05-24
RU2016133432A (ru) 2018-12-10
TW201639197A (zh) 2016-11-01
US9997686B2 (en) 2018-06-12
EP2641279B1 (en) 2017-09-27
JP2018022930A (ja) 2018-02-08
TW201242101A (en) 2012-10-16
RU2016133432A3 (zh) 2019-12-05
RU2013127670A (ru) 2014-12-27
TWI689113B (zh) 2020-03-21
TW201813136A (zh) 2018-04-01
BR112013012333A2 (pt) 2019-03-06
US9172018B2 (en) 2015-10-27
CN103201863B (zh) 2016-04-13
JP6297838B2 (ja) 2018-03-20
RU2597674C2 (ru) 2016-09-20
JP6738785B2 (ja) 2020-08-12
US20130221386A1 (en) 2013-08-29
US20160043295A1 (en) 2016-02-11

Similar Documents

Publication Publication Date Title
US20110248289A1 (en) Light emitting diode package, lighting device and light emitting diode package substrate
JP6738785B2 (ja) 発光デバイス及びその製造方法
CN102313170B (zh) 发光装置以及照明装置
WO2014142396A1 (ko) 방열성능을 향상하고 누설전류를 방지하기 위한 금속회로를 장착한 고광력 ｌｅｄ 광원 구조체
CN110431664A (zh) 将led元件安装在平的载体上
US9203009B2 (en) Electrode module for LED lamp
KR20100117451A (ko) 방열홀을 가지는 인쇄회로기판 및 이를 이용한 ｌｅｄ 조명
KR100937136B1 (ko) 복수의 패키지를 모듈화한 리드프레임을 이용한 발광다이오드 모듈
KR101115403B1 (ko) 발광 장치
KR101476422B1 (ko) 인쇄회로기판 및 그를 이용한 ｌｅｄ 모듈
GB2480428A (en) PCB with metal core having extended heatsink bosses for mounting LEDs
KR20100117448A (ko) 방사형 방열구조를 가지는 인쇄회로기판 및 이를 이용한 ｌｅｄ 조명
EP2712283A1 (en) Light-emitting apparatus and luminaire
KR20150077208A (ko) 반도체 소자 패키지, 이를 포함하는 발광 다이오드 패키지 및 광학 모듈
KR100986214B1 (ko) 개선된 방열 구조를 갖는 연성 인쇄회로기판
CN102751269A (zh) 发光二极管模块封装结构
CN103715189A (zh) 发光装置及照明装置
CN102983244A (zh) Led发光组件以及具有该led发光组件的照明装置
CN103000784A (zh) 具有硬导线或插头的led电路基板及led发光模块
JP2020150097A (ja) 発光装置、発光モジュール及びその製造方法
US20130100654A1 (en) Complementary configuration of mounted light sources
CN109882817A (zh) 铜芯散热发光组件及其制作方法
TWM415425U (en) LED substrate structure

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Eindhoven, Netherlands

Patentee after: KONINKLIJKE PHILIPS N.V.

Address before: Eindhoven, Netherlands

Patentee before: KONINKLIJKE PHILIPS ELECTRONICS N.V.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20200716

Address after: Holland Schiphol

Patentee after: KONINKLIJKE PHILIPS NV

Address before: Eindhoven, Netherlands

Patentee before: KONINKLIJKE PHILIPS N.V.