JP6738785B2 - 発光デバイス及びその製造方法 - Google Patents
発光デバイス及びその製造方法 Download PDFInfo
- Publication number
- JP6738785B2 JP6738785B2 JP2017217314A JP2017217314A JP6738785B2 JP 6738785 B2 JP6738785 B2 JP 6738785B2 JP 2017217314 A JP2017217314 A JP 2017217314A JP 2017217314 A JP2017217314 A JP 2017217314A JP 6738785 B2 JP6738785 B2 JP 6738785B2
- Authority
- JP
- Japan
- Prior art keywords
- led
- led die
- conductor
- conductor regions
- die
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title description 7
- 239000004020 conductor Substances 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 13
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 13
- 239000000919 ceramic Substances 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Led Devices (AREA)
Description
Claims (12)
- 少なくとも1つのキャリア素子を含むフレームを供給するステップであって、前記キャリア素子は、互いに電気的に分離された複数の導体領域を有する、ステップと、
少なくとも1つの発光デバイス(LED)ダイのコンタクトを、直接的に前記導体領域に取り付けるステップと、
前記導体領域が、物理的且つ電気的に、前記LEDダイを介する以外に互いに接続されないように、前記キャリア素子を前記フレームから分離するステップと、
を有する方法。 - 前記キャリア素子を前記フレームから分離するステップの後に、前記導体領域間に誘電材料を配置するステップ、を更に有する請求項1記載の方法。
- 前記導体領域は、前記LEDダイからの熱を放散する熱伝導領域と、前記LEDダイを外部エネルギー源に結合する1又は複数の電極とを含む、請求項1記載の方法。
- 前記複数の導体領域に対応するパターンに従って、前記フレームから材料を除去することによって、前記フレームを形成するステップ、を含む請求項1記載の方法。
- 前記複数の導体領域は、アノード領域、カソード領域、及び、熱輸送領域を含み、前記アノード領域及び前記カソード領域は、それぞれ、前記LEDダイに付随するアノード電極及びカソード電極の結合を支援するために設けられる、請求項1記載の方法。
- 前記取り付けるステップは、リフローはんだ付けすることを含む、請求項1記載の方法。
- 発光デバイス(LED)であって、
複数の導体領域と、
前記複数の導体領域にまたがって延在し、前記複数の導体領域の各々に直接的に接着されたLEDダイと、
を有し、
前記導体領域が、前記LEDダイのための構造的支持と、前記LEDダイへの電気的及び熱的な結合とを提供し、前記導体領域は、物理的且つ電気的に、前記LEDダイを介する以外に互いに接続されていない、
LED。 - 前記導体領域の1又は複数は、対応するレセプタクルへの当該LEDの挿入を支援するピン構造を有する、請求項7記載のLED。
- 前記導体領域の各々が銅を有する、請求項7記載のLED。
- 前記導体領域の各々が、少なくとも0.75mmの厚さを有する、請求項7記載のLED。
- 前記LEDダイは、前記複数の導体領域にはんだで接着されている、請求項7記載のLED。
- 前記LEDダイは、前記LEDダイの上面を通じて光を放射する1又は複数の発光素子を有し、前記LEDダイは、前記上面とは反対側の前記LEDダイの底面上のコンタクトを介して、前記複数の導体領域に接着されている、請求項7記載のLED。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41539510P | 2010-11-19 | 2010-11-19 | |
US61/415,395 | 2010-11-19 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013539375A Division JP6297838B2 (ja) | 2010-11-19 | 2011-11-14 | 発光デバイス及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018022930A JP2018022930A (ja) | 2018-02-08 |
JP6738785B2 true JP6738785B2 (ja) | 2020-08-12 |
Family
ID=45496212
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013539375A Active JP6297838B2 (ja) | 2010-11-19 | 2011-11-14 | 発光デバイス及びその製造方法 |
JP2017217314A Active JP6738785B2 (ja) | 2010-11-19 | 2017-11-10 | 発光デバイス及びその製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013539375A Active JP6297838B2 (ja) | 2010-11-19 | 2011-11-14 | 発光デバイス及びその製造方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US9172018B2 (ja) |
EP (1) | EP2641279B1 (ja) |
JP (2) | JP6297838B2 (ja) |
CN (1) | CN103201863B (ja) |
BR (1) | BR112013012333A2 (ja) |
RU (2) | RU2597674C2 (ja) |
TW (3) | TW201242101A (ja) |
WO (1) | WO2012066461A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103201863B (zh) * | 2010-11-19 | 2016-04-13 | 皇家飞利浦电子股份有限公司 | 用于发光器件的岛状载体 |
US10043960B2 (en) * | 2011-11-15 | 2018-08-07 | Cree, Inc. | Light emitting diode (LED) packages and related methods |
KR101661140B1 (ko) * | 2015-06-25 | 2016-09-29 | (주)포인트엔지니어링 | 금속 및 비금속 접합 기판 |
KR102335216B1 (ko) | 2017-04-26 | 2021-12-03 | 삼성전자 주식회사 | 발광소자 패키지 |
US11677059B2 (en) | 2017-04-26 | 2023-06-13 | Samsung Electronics Co., Ltd. | Light-emitting device package including a lead frame |
Family Cites Families (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6393177A (ja) * | 1986-10-07 | 1988-04-23 | Nec Corp | 発光ダイオ−ド |
JPH05129661A (ja) * | 1991-10-31 | 1993-05-25 | Iwasaki Electric Co Ltd | 発光ダイオードランプ |
JPH07117628B2 (ja) * | 1992-07-23 | 1995-12-18 | 山一電機株式会社 | 光電気変換器 |
JP4023698B2 (ja) * | 1996-11-15 | 2007-12-19 | シチズン電子株式会社 | 下面電極付き側面使用電子部品の製造方法 |
US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
JP3217322B2 (ja) * | 1999-02-18 | 2001-10-09 | 日亜化学工業株式会社 | チップ部品型発光素子 |
US6373078B1 (en) * | 1999-09-28 | 2002-04-16 | International Rectifier Corp. | Microelectronic relay with upset and downset lead frames |
RU2197680C1 (ru) * | 2001-09-19 | 2003-01-27 | Открытое акционерное общество "АВТОВАЗ" | Светотехнический блок |
US20030057421A1 (en) * | 2001-09-27 | 2003-03-27 | Tzer-Perng Chen | High flux light emitting diode having flip-chip type light emitting diode chip with a transparent substrate |
JP2003309293A (ja) * | 2002-04-17 | 2003-10-31 | Sony Corp | 半導体発光素子パッケージ、表示装置、発光素子の除去方法及び発光素子の検査方法 |
DE10237084A1 (de) * | 2002-08-05 | 2004-02-19 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines elektrischen Leiterrahmens und Verfahren zum Herstellen eines oberflächenmontierbaren Halbleiterbauelements |
JP3910171B2 (ja) | 2003-02-18 | 2007-04-25 | シャープ株式会社 | 半導体発光装置、その製造方法および電子撮像装置 |
RU2267188C2 (ru) * | 2003-06-23 | 2005-12-27 | Федорова Галина Владимировна | Светодиодное полупроводниковое устройство в корпусе для поверхностного монтажа |
JP4114557B2 (ja) * | 2003-06-25 | 2008-07-09 | 松下電工株式会社 | 発光装置 |
US6972438B2 (en) * | 2003-09-30 | 2005-12-06 | Cree, Inc. | Light emitting diode with porous SiC substrate and method for fabricating |
KR20050092300A (ko) * | 2004-03-15 | 2005-09-21 | 삼성전기주식회사 | 고출력 발광 다이오드 패키지 |
JP2005302944A (ja) * | 2004-04-09 | 2005-10-27 | Tabuchi Electric Co Ltd | 発光装置 |
DE102004029941B3 (de) * | 2004-06-21 | 2005-12-15 | Infineon Technologies Ag | System zur Auswertung eines Sensorsignals |
JP4571139B2 (ja) * | 2004-08-10 | 2010-10-27 | ルネサスエレクトロニクス株式会社 | 発光装置および発光装置の製造方法 |
RU2355068C1 (ru) * | 2004-12-16 | 2009-05-10 | Сеул Семикондактор Ко., Лтд. | Рамка с выводами, имеющая поддерживающее теплоотвод кольцо, способ изготовления корпуса светоизлучающего диода с ее использованием и корпус светоизлучающего диода, изготовленный этим способом |
EP1825524A4 (en) * | 2004-12-16 | 2010-06-16 | Seoul Semiconductor Co Ltd | CONNECTION GRID COMPRISING A THERMAL DISSIPATOR SUPPORT RING, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE HOUSING USING THE SAME, AND LIGHT-EMITTING DIODE HOUSING MADE THEREBY |
US7791014B2 (en) * | 2005-03-09 | 2010-09-07 | Asahi Kasei Emd Corporation | Optical device and a method of manufacturing an optical device having a photoelectric conversion element and an optical adjustment element |
JP2006261519A (ja) * | 2005-03-18 | 2006-09-28 | Sharp Corp | 半導体装置及びその製造方法 |
EP1911389A4 (en) * | 2005-08-05 | 2009-12-16 | Olympus Medical Systems Corp | LIGHT EMITTING UNIT |
JP2007073575A (ja) | 2005-09-05 | 2007-03-22 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
JP4966199B2 (ja) * | 2005-09-20 | 2012-07-04 | ルネサスエレクトロニクス株式会社 | Led光源 |
JP3117281U (ja) * | 2005-09-30 | 2006-01-05 | 鼎元光電科技股▲ふん▼有限公司 | 効率の高いマトリックス発光ダイオード素子 |
JP2007109911A (ja) * | 2005-10-14 | 2007-04-26 | Renesas Technology Corp | 発光ダイオードおよびその製造方法 |
JP2007134376A (ja) * | 2005-11-08 | 2007-05-31 | Akita Denshi Systems:Kk | 発光ダイオード装置及びその製造方法 |
US20070228386A1 (en) * | 2006-03-30 | 2007-10-04 | Jin-Shown Shie | Wire-bonding free packaging structure of light emitted diode |
US20070228686A1 (en) | 2006-03-31 | 2007-10-04 | Hendrickson Usa, L.L.C. | Movable subframe for tractor-trailers |
JP5057707B2 (ja) * | 2006-06-16 | 2012-10-24 | 日亜化学工業株式会社 | 発光装置 |
WO2008047933A1 (en) * | 2006-10-17 | 2008-04-24 | C.I.Kasei Company, Limited | Package assembly for upper/lower electrode light-emitting diodes and light-emitting device manufacturing method using same |
JP2008103401A (ja) * | 2006-10-17 | 2008-05-01 | C I Kasei Co Ltd | 上下電極型発光ダイオード用パッケージおよび上下電極型発光ダイオード用パッケージの製造方法 |
WO2008056813A1 (fr) * | 2006-11-08 | 2008-05-15 | C.I.Kasei Company, Limited | Dispositif électroluminescent et son procédé de fabrication |
JP2008258567A (ja) * | 2006-11-08 | 2008-10-23 | C I Kasei Co Ltd | 発光装置および発光装置の製造方法 |
DE102007036226A1 (de) | 2007-08-02 | 2009-02-05 | Perkinelmer Elcos Gmbh | Anbringungsstruktur für LEDs, LED-Baugruppe, LED-Baugruppensockel, Verfahren zum Ausbilden einer Anbringungsstruktur |
US7652301B2 (en) * | 2007-08-16 | 2010-01-26 | Philips Lumileds Lighting Company, Llc | Optical element coupled to low profile side emitting LED |
KR20100093527A (ko) * | 2007-10-19 | 2010-08-25 | 니혼텅스텐 가부시키가이샤 | Led 패키지 기판 및 그것을 사용한 led 패키지 |
JP4758976B2 (ja) * | 2007-12-03 | 2011-08-31 | 日立ケーブルプレシジョン株式会社 | 半導体発光素子搭載用リードフレーム及びその製造方法並びに発光装置 |
KR100981214B1 (ko) * | 2008-01-28 | 2010-09-10 | 알티전자 주식회사 | 발광다이오드 패키지 |
JP2009224376A (ja) * | 2008-03-13 | 2009-10-01 | Toshiba Discrete Technology Kk | 側面型発光装置及びその製造方法 |
CN101533819B (zh) * | 2008-03-14 | 2013-01-16 | 旭丽电子(广州)有限公司 | 半导体封装构造、应用于半导体封装构造的导线架及导电件 |
US8080827B2 (en) * | 2008-07-31 | 2011-12-20 | Bridgelux, Inc. | Top contact LED thermal management |
TW201019514A (en) * | 2008-09-25 | 2010-05-16 | Denka Agsp Kabushiki Kaisha | A substrate mounted for a light emitting element and a method for manufacturing the substrate |
US8288785B2 (en) * | 2008-12-03 | 2012-10-16 | Seoul Semiconductor Co., Ltd. | Lead frame having light-reflecting layer, light emitting diode having the lead frame, and backlight unit having the light emitting diode |
JP5368809B2 (ja) | 2009-01-19 | 2013-12-18 | ローム株式会社 | Ledモジュールの製造方法およびledモジュール |
JP2010177329A (ja) * | 2009-01-28 | 2010-08-12 | Sharp Corp | 樹脂複合リードフレームとその製造方法、及びその実装体 |
JP2010238833A (ja) * | 2009-03-31 | 2010-10-21 | Panasonic Corp | 光半導体装置用パッケージおよび光半導体装置 |
DE102009015963A1 (de) * | 2009-04-02 | 2010-10-07 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
KR101673913B1 (ko) * | 2009-07-20 | 2016-11-08 | 삼성전자 주식회사 | 발광 패키지 및 그 제조 방법 |
CN102024882A (zh) * | 2009-09-14 | 2011-04-20 | 展晶科技(深圳)有限公司 | 发光二极管装置及其制造方法 |
US8502257B2 (en) * | 2009-11-05 | 2013-08-06 | Visera Technologies Company Limited | Light-emitting diode package |
CN103201863B (zh) * | 2010-11-19 | 2016-04-13 | 皇家飞利浦电子股份有限公司 | 用于发光器件的岛状载体 |
-
2011
- 2011-11-14 CN CN201180055232.1A patent/CN103201863B/zh active Active
- 2011-11-14 EP EP11808937.4A patent/EP2641279B1/en active Active
- 2011-11-14 BR BR112013012333-8A patent/BR112013012333A2/pt active Search and Examination
- 2011-11-14 JP JP2013539375A patent/JP6297838B2/ja active Active
- 2011-11-14 WO PCT/IB2011/055063 patent/WO2012066461A1/en active Application Filing
- 2011-11-14 RU RU2013127670/28A patent/RU2597674C2/ru active
- 2011-11-14 US US13/878,432 patent/US9172018B2/en active Active
- 2011-11-14 RU RU2016133432A patent/RU2721101C2/ru active
- 2011-11-17 TW TW100142112A patent/TW201242101A/zh unknown
- 2011-11-17 TW TW105122937A patent/TWI620350B/zh active
- 2011-11-17 TW TW106142287A patent/TWI689113B/zh active
-
2015
- 2015-10-23 US US14/921,938 patent/US9997686B2/en active Active
-
2017
- 2017-11-10 JP JP2017217314A patent/JP6738785B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
RU2016133432A3 (ja) | 2019-12-05 |
EP2641279A1 (en) | 2013-09-25 |
WO2012066461A1 (en) | 2012-05-24 |
TW201242101A (en) | 2012-10-16 |
TW201813136A (zh) | 2018-04-01 |
US20160043295A1 (en) | 2016-02-11 |
JP6297838B2 (ja) | 2018-03-20 |
RU2597674C2 (ru) | 2016-09-20 |
US9172018B2 (en) | 2015-10-27 |
US9997686B2 (en) | 2018-06-12 |
US20130221386A1 (en) | 2013-08-29 |
TWI620350B (zh) | 2018-04-01 |
BR112013012333A2 (pt) | 2019-03-06 |
RU2721101C2 (ru) | 2020-05-15 |
JP2013543277A (ja) | 2013-11-28 |
CN103201863A (zh) | 2013-07-10 |
TW201639197A (zh) | 2016-11-01 |
RU2016133432A (ru) | 2018-12-10 |
TWI689113B (zh) | 2020-03-21 |
RU2013127670A (ru) | 2014-12-27 |
CN103201863B (zh) | 2016-04-13 |
JP2018022930A (ja) | 2018-02-08 |
EP2641279B1 (en) | 2017-09-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6738785B2 (ja) | 発光デバイス及びその製造方法 | |
US8324722B2 (en) | Packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity | |
KR101035335B1 (ko) | 발광다이오드 패키지 | |
TWI395345B (zh) | 具有低熱阻之發光二極體燈 | |
JP2010034262A (ja) | 発光素子収納用パッケージ | |
JP2010199167A (ja) | 発光素子収納用パッケージならびに発光装置 | |
JP2008218761A (ja) | 発光素子収納用パッケージ | |
AU2008201050B2 (en) | Electronic-component-mounting board | |
KR101115403B1 (ko) | 발광 장치 | |
JP2007096008A (ja) | 発光素子搭載用パッケージ | |
GB2480428A (en) | PCB with metal core having extended heatsink bosses for mounting LEDs | |
JP2010272736A (ja) | 発光装置 | |
KR20140008911A (ko) | 광 모듈 및 그 제조 방법 | |
JP2010034259A (ja) | 発光素子収納用パッケージ | |
EP3131370A1 (en) | Printed circuit board and light-emitting device including same | |
KR101248607B1 (ko) | 열우물을 이용한 방열구조를 가지는 led 어레이 모듈 | |
JP2012134306A (ja) | 発光装置及びそれを用いた照明装置 | |
KR101220940B1 (ko) | 방열 회로 기판 및 그의 제조 방법 | |
JP2015079737A (ja) | 発光モジュール | |
EP3349259A1 (en) | Light emitting device | |
KR20110023402A (ko) | 금속코어기판용 연결소자 및 이를 포함하는 발광장치 | |
KR101233731B1 (ko) | Led 조명 장치 | |
JP2013012531A (ja) | 電子部品搭載用部材および電子装置 | |
US20150243860A1 (en) | Light-emitting device | |
JP2012209348A (ja) | 発光装置及びこれを備えた照明器具 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171113 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180828 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180918 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20181214 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190115 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190702 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190920 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191225 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20191226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20191226 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200602 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200629 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200720 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6738785 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |