CN103187239B - 去除芯片上锡球的方法 - Google Patents

去除芯片上锡球的方法 Download PDF

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CN103187239B
CN103187239B CN201110451503.7A CN201110451503A CN103187239B CN 103187239 B CN103187239 B CN 103187239B CN 201110451503 A CN201110451503 A CN 201110451503A CN 103187239 B CN103187239 B CN 103187239B
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corrosive liquid
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CN103187239A (zh
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王金成
张伟
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CSMC Technologies Corp
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Wuxi CSMC Semiconductor Co Ltd
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Priority to PCT/CN2012/084325 priority patent/WO2013097550A1/zh
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Abstract

本发明提供一种去除芯片上锡球的方法。该方法包括：将其上设置有锡球的芯片放置在腐蚀液中浸泡，其中，所述腐蚀液是通过将浓度为70％的硝酸溶液与去离子水按1∶1的体积比配置而成的；取出所述芯片并使用水进行冲洗；将所述芯片放置在盛放有水的容器中进行超声波震荡清洗。本发明的方法通过使用浓度为70％的硝酸溶液与去离子水按1∶1的体积比配置的腐蚀液，可以完全将芯片表面的锡球去除，并且不会对焊垫产生影响。

Description

去除芯片上锡球的方法
技术领域
本发明涉及半导体制造技术领域，特别涉及一种去除芯片上锡球的方法。
背景技术
集成电路(IC)封装是指把芯片上的电路管脚用导线接引到外部接头处，以便与其它器件连接。封装形式是指安装半导体集成电路芯片用的外壳。它不仅起着安装、固定、密封、保护芯片及增强电热性能等方面的作用，而且还通过芯片上的接点用导线连接到封装外壳的引脚上，这些引脚又通过印刷电路板上的导线与其他器件相连接，从而实现内部芯片与外部电路的连接。
图1为现有技术中IC封装结构的示意图。如图1所示，IC封装结构包括基板101、芯片102、多个锡球103和填充材料104。芯片102设置在基板101的上方，以利用该基板101承载芯片102。锡球103设置在芯片102与基板101之间，以将芯片102粘接固定于基板101上。填充材料104设置在芯片102与基板101之间，并包围锡球103，以减轻基板101和芯片102受热膨胀所产生的应力。
图2是现有技术中IC封装结构的局部放大视图。如图2所示，芯片102上设置有用于与外部器件电连接的焊垫102，在芯片102上未设置有焊垫102的地方覆盖有钝化层202。在钝化层202上还设置有聚合物层203，以在到锡球103制造和芯片装配过程中的起到缓冲作用。锡球103设置在芯片102的焊垫201的上方，并且在锡球103和焊垫201之间还设置有锡球下材料层(UnderBallMaterial，UBM)204。UBM204不仅能够将锡球103粘合到焊垫201上，而且还能够阻挡锡向焊垫201中扩散，此外还能降低锡球103与焊垫201的接触电阻。
在IC封装结构失效无法正常工作时，需要对该IC封装结构进行失效分析，以查找失效原因。为了能够查找出可能存在于锡球103下方的失效点，通常进行失效分析时会将锡球103去除。另外有时进行失效分析的条件比较复杂，需要对芯片102进行重新封装、打金线或铝线，而有锡球103在芯片102上面就无法重新封装，因此需要去除锡球103。现有技术中通常使用王水(硝酸与盐酸的混合溶液)腐蚀去除锡球103，然而，王水与所有金属都发生化学反应，且反应速度很快，因此很容易损伤锡球103下方的焊点201，导致芯片102的电学参数改变。
因此，需要一种去除芯片上锡球的方法，以解决现有技术中存在的问题。
发明内容
在发明内容部分中引入了一系列简化形式的概念，这将在具体实施方式部分中进一步详细说明。本发明的发明内容部分并不意味着要试图限定出所要求保护的技术方案的关键特征和必要技术特征，更不意味着试图确定所要求保护的技术方案的保护范围。
为了解决现有技术中存在的问题，本发明提出了一种去除芯片上锡球的方法，包括：将其上设置有锡球的芯片放置在腐蚀液中浸泡，其中，所述腐蚀液是通过将浓度为70％的硝酸溶液与去离子水按1∶1的体积比配置而成的；取出所述芯片并使用水进行冲洗；将所述芯片放置在盛放有水的容器中进行超声波震荡清洗。
优选地，所述芯片在所述腐蚀液中的浸泡时间为10-15分钟。
优选地，所述冲洗步骤的冲洗时间大于或等于30秒。
优选地，所述超声波震荡清洗的震荡时间大于等于40秒。
优选地，所述震荡时间为1-2分钟。
本发明的方法通过使用浓度为70％的硝酸溶液与去离子水按1∶1的体积比配置的腐蚀液，可以完全将芯片表面的锡球去除，并且不会对焊垫产生影响。
附图说明
本发明的下列附图在此作为本发明的一部分用于理解本发明。附图中示出了本发明的实施例及其描述，用来解释本发明的原理。在附图中，
图1为现有技术中IC封装结构的示意图；
图2是现有技术中IC封装结构的局部放大视图；以及
图3为根据本发明一个实施方式去除芯片上锡球的工艺流程图。
具体实施方式
接下来，将结合附图更加完整地描述本发明，附图中示出了本发明的实施例。但是，本发明能够以不同形式实施，而不应当解释为局限于这里提出的实施例。相反地，提供这些实施例将使公开彻底和完全，并且将本发明的范围完全地传递给本领域技术人员。在附图中，为了清楚，层和区的尺寸以及相对尺寸可能被夸大。自始至终相同附图标记表示相同的元件。
应当明白，当元件或层被称为“在...上”、“与...相邻”、“连接到”或“耦合到”其它元件或层时，其可以直接地在其它元件或层上、与之相邻、连接或耦合到其它元件或层，或者可以存在居间的元件或层。相反，当元件被称为“直接在...上”、“与...直接相邻”、“直接连接到”或“直接耦合到”其它元件或层时，则不存在居间的元件或层。
本发明提供一种去除芯片上锡球的方法。图3为根据本发明一个实施方式去除芯片上锡球的工艺流程图。下面将结合图3对本发明的方法进行详细描述。
执行步骤301，将其上设置有锡球的芯片放置在腐蚀液中浸泡，其中，腐蚀液是通过将浓度为70％的硝酸溶液与去离子水按1∶1的体积比配置而成的。将锡球的芯片放置在上述腐蚀液中，芯片上的UBM204和聚合物层203(参照图2)很容易与该腐蚀液反应，而使得锡球自动脱落。
此外，为了使腐蚀液与锡球下方的UBM和聚合物层充分地与腐蚀液反应，应当尽量延伸浸泡时间，然而，浸泡时间过长可能会导致锡球下方的焊垫(其材料通常为铝)受到损伤，因此，优选地，芯片在腐蚀液中的浸泡时间可以为10-15分钟。
执行步骤302，取出芯片并使用水进行冲洗。
将芯片从腐蚀液中取出，并使用清水进行冲洗，以去除芯片表面的腐蚀液残留。优选地，该冲洗步骤的冲洗时间可以大于或等于30秒。
执行步骤303，将芯片放置在盛放有水的容器中进行超声波震荡清洗。
超声波震荡清洗可以进一步去除芯片表面的腐蚀液残留，并且还能够去除芯片表面脱落下来的锡球、UBM和聚合物。经过该超声波震荡清洗步骤后，芯片表面的锡球能够全部脱落，因此可以进行失效分析和重新装配等等。
优选地，超声波震荡清洗的震荡时间大于等于40秒。为了避免震荡时间过长而影响芯片自身的结构和电学性能，优选地，震荡时间可以为1-2分钟。
本发明的方法通过使用浓度为70％的硝酸溶液与去离子水按1∶1的体积比配置的腐蚀液，可以完全将芯片表面的锡球去除，并且不会对焊垫产生影响。
本发明已经通过上述实施例进行了说明，但应当理解的是，上述实施例只是用于举例和说明的目的，而非意在将本发明限制于所描述的实施例范围内。此外本领域技术人员可以理解的是，本发明并不局限于上述实施例，根据本发明的教导还可以做出更多种的变型和修改，这些变型和修改均落在本发明所要求保护的范围以内。本发明的保护范围由附属的权利要求书及其等效范围所界定。

Claims (5)

1.一种去除芯片上锡球的方法，其特征在于，包括：
将其上设置有锡球的芯片放置在腐蚀液中浸泡，其中，所述腐蚀液是通过将浓度为70％的硝酸溶液与去离子水按1:1的体积比配置而成的，所述芯片上的所述锡球下方的UBM和聚合物层与所述腐蚀液反应，而使得所述锡球自动脱落；
取出所述芯片并使用水进行冲洗；
将所述芯片放置在盛放有水的容器中进行超声波震荡清洗。
2.根据权利要求1所述的方法，其特征在于，所述芯片在所述腐蚀液中的浸泡时间为10-15分钟。
3.根据权利要求1所述的方法，其特征在于，所述冲洗步骤的冲洗时间大于或等于30秒。
4.根据权利要求1所述的方法，其特征在于，所述超声波震荡清洗的震荡时间大于等于40秒。
5.根据权利要求4所述的方法，其特征在于，所述震荡时间为1-2分钟。
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