JP2017017302A - 電子素子及び製造方法 - Google Patents
電子素子及び製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 56
- 239000002184 metal Substances 0.000 claims abstract description 199
- 229910052751 metal Inorganic materials 0.000 claims abstract description 199
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 239000000463 material Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 32
- 230000008569 process Effects 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 19
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 230000006378 damage Effects 0.000 claims description 6
- 230000000087 stabilizing effect Effects 0.000 claims description 2
- 238000013461 design Methods 0.000 description 16
- 238000012360 testing method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008054 signal transmission Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 239000007810 chemical reaction solvent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Abstract
【解決手段】 電子素子は、基板;前記基板の上に位置し、前記電子製品と電気的に接続するためのバンプ;及び、前記バンプと前記基板との間に位置し、前記バンプを前記基板に貼り合わせるための少なくとも一つのアンダバンプメタル層を含み、そのうち、前記アンダバンプメタル層には、欠口構造が形成されている。
【選択図】 図1A
Description
基板;
前記基板の上に設置されており、前記電子製品と電気的に接続するためのバンプ;及び
前記バンプと前記基板との間に設置されており、前記バンプを前記基板に貼り合わせるための少なくとも一つのアンダバンプメタル(Under bump metal、UBM)層を含み、
そのうち、前記アンダバンプメタル層には、前記バンプと前記基板との間の耐せん断応力能力を向上させ、前記バンプと前記基板とのカップリング関係を安定化させるための欠口構造が形成されている。
前記基板の上に順に前記アンダバンプメタル層及び前記バンプを設置し;及び、
前記アンダバンプメタル層に対してエッチング処理を行って欠口構造を形成することを含み、
そのうち、前記欠口構造は、前記バンプと前記基板との間の耐せん断応力能力を向上させ、前記バンプと前記基板とのカップリング関係を安定化させるために用いられる。
ステップ502:基板にアンダバンプメタル層及びバンプを順次設置し;
テップ504:アンダバンプメタル層に対してエッチング処理を行って欠口構造を形成し;
ステップ506:エンド。
100、120 基板
102、122 バンプ
104、124、126 アンダバンプメタル層
300、302、304、306、308、310、500、502、504、506 ステップ
31 フォトレジスト層
32 鈍化層
50 製造プロセス
BB バンプ接続底部
基板;
前記基板の上に設置されており、前記電子製品と電気的に接続するためのバンプ;及び
前記バンプと前記基板との間に設置されており、前記バンプを前記基板に貼り合わせるための少なくとも一つのアンダバンプメタル(Under bump metal、UBM)層を含み、
そのうち、前記アンダバンプメタル層には、欠口構造が形成されている。
前記基板の上に順に前記アンダバンプメタル層及び前記バンプを設置し;及び、
前記アンダバンプメタル層に対してエッチング処理を行って欠口構造を形成することを含む。
ステップ502:基板にアンダバンプメタル層及びバンプを順次設置し;
テップ504:アンダバンプメタル層に対してエッチング処理を行って欠口構造を形成し;
ステップ506:エンド。
100、120 基板
102、122 バンプ
104、124、126 アンダバンプメタル層
300、302、304、306、308、310、500、502、504、506 ステップ
31 フォトレジスト層
32 鈍化層
50 製造プロセス
BB バンプ接続底部
a1 第一面積
a2 第二面積
A1 第一凹溝断面積
A2 第二凹溝断面積
C1 拡大図
L1 第一長さ
L2 第二長さ
m 長さ
n 厚み
Claims (12)
- 電子製品のための電子素子であって、
基板;
前記基板の上に設置されており、前記電子製品と電気的に接続するためのバンプ;及ひ
前記バンプと前記基板との間に設置されており、前記バンプを前記基板に貼り合わせるための少なくとも一つのアンダバンプメタル(Under bump metal、UBM)層を含み、
前記アンダバンプメタル層には、前記バンプと前記基板との間の耐せん断応力能力を向上させ、前記バンプと前記基板とのカップリング関係を安定化させるための欠口構造が形成されている、電子素子。 - 請求項1に記載の電子素子であって、
前記バンプの材質が前記アンダバンプメタル層の材質と同じである時に、前記アンダバンプメタル層は、前記バンプの一部を形成し、
前記バンプの材質が前記アンダバンプメタル層の材質と異なる時に、前記バンプ及び前記アンダバンプメタル層は、スタックされて設置されている金属結合体である、電子素子。 - 請求項1に記載電子素子であって、
前記欠口構造は、前記バンプを前記アンダバンプメタル層に貼り合わせる平面に位置し、
前記バンプの断面積は、前記アンダバンプメタル層の断面積よりも大きい、電子素子。 - 請求項1に記載の電子素子であって、
エッチング処理により、前記アンダバンプメタル層に対して構造破壊プロセスを行うことで、前記バンプを前記アンダバンプメタル層に貼り合わせる平面に前記欠口構造を形成している、電子素子。 - 請求項1に記載の電子素子であって、
前記アンダバンプメタルと前記基板との間に設置されている他のアンダバンプメタル層を更に含み、
前記他のアンダバンプメタル層の断面積は、前記アンダバンプメタル層の断面積よりも大きい、電子素子。 - 請求項5に記載の電子素子であって、
前記アンダバンプメタル層及び前記他のアンダバンプメタル層は、スタックされて形成されている階段状構造である、電子素子。 - 電子製品の電子素子のための製造方法であって、
前記電子素子は、基板、バンプ、及び少なくとも一つのアンダバンプメタル(Under bump metal、UBM)層を含み、
前記製造方法は、
前記基板の上に順に前記アンダバンプメタル層及び前記バンプを設置し;及び
前記アンダバンプメタル層に対してエッチング処理を行うことで欠口構造を形成することを含み、
前記欠口構造は、前記バンプと前記基板との間の耐せん断応力能力を向上させ、前記バンプと前記基板とのカップリング関係を安定化させるために用いられる、製造方法。 - 請求項7に記載の製造方法であって、
前記バンプの材質が前記アンダバンプメタル層の材質と同じである時に、前記アンダバンプメタル層は、前記バンプの一部を形成し、
前記バンプの材質が前記アンダバンプメタル層の材質と異なる時に、前記バンプ及び前記アンダバンプメタル層は、スタックされて設置された金属結合体である、製造方法。 - 請求項7に記載の製造方法であって、
前記欠口構造は、前記バンプを前記アンダバンプメタル層に貼り合わせる平面に位置し、
前記バンプの断面積は、前記アンダバンプメタル層の断面積よりも大きい、製造方法。 - 請求項7に記載の製造方法であって、
前記エッチング処理により、前記アンダバンプメタル層に対して構造破壊プロセスを行うことで、前記バンプを前記アンダバンプメタル層に貼り合わせる平面に前記欠口構造を形成する、製造方法。 - 請求項7に記載の製造方法であって、
前記アンダバンプメタルと前記基板との間に他のアンダバンプメタル層を形成することを更に含み、
前記他のアンダバンプメタル層の断面積は、前記アンダバンプメタル層の断面積よりも大きい、製造方法。 - 請求項11に記載の製造方法であって、
前記アンダバンプメタル層及び前記他のアンダバンプメタル層は、スタックされて段階状構造を形成する、製造方法。
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