CN103155148B - 用于高电压引脚esd保护的双向背对背堆叠scr、制造方法和设计结构 - Google Patents
用于高电压引脚esd保护的双向背对背堆叠scr、制造方法和设计结构 Download PDFInfo
- Publication number
- CN103155148B CN103155148B CN201180048091.0A CN201180048091A CN103155148B CN 103155148 B CN103155148 B CN 103155148B CN 201180048091 A CN201180048091 A CN 201180048091A CN 103155148 B CN103155148 B CN 103155148B
- Authority
- CN
- China
- Prior art keywords
- trap
- district
- scr
- diode
- symmetric double
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000008520 organization Effects 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000002955 isolation Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 21
- 238000010276 construction Methods 0.000 claims description 18
- 239000012212 insulator Substances 0.000 claims description 15
- 238000012360 testing method Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 238000013461 design Methods 0.000 description 37
- 102100034088 40S ribosomal protein S4, X isoform Human genes 0.000 description 25
- 101000732165 Homo sapiens 40S ribosomal protein S4, X isoform Proteins 0.000 description 25
- 230000008569 process Effects 0.000 description 20
- 238000012938 design process Methods 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000011960 computer-aided design Methods 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011469 building brick Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000012432 intermediate storage Methods 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000547 structure data Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/898,013 | 2010-10-05 | ||
| US12/898,013 US8503140B2 (en) | 2010-10-05 | 2010-10-05 | Bi-directional back-to-back stacked SCR for high-voltage pin ESD protection, methods of manufacture and design structures |
| PCT/US2011/051500 WO2012047464A1 (en) | 2010-10-05 | 2011-09-14 | Bi-directional back-to-back stacked scr for high-voltage pin esd protection, methods of manufacture and design structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103155148A CN103155148A (zh) | 2013-06-12 |
| CN103155148B true CN103155148B (zh) | 2015-11-11 |
Family
ID=45889054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180048091.0A Active CN103155148B (zh) | 2010-10-05 | 2011-09-14 | 用于高电压引脚esd保护的双向背对背堆叠scr、制造方法和设计结构 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8503140B2 (ja) |
| JP (1) | JP5775593B2 (ja) |
| CN (1) | CN103155148B (ja) |
| DE (1) | DE112011102518B4 (ja) |
| GB (1) | GB2497704A (ja) |
| TW (1) | TW201241927A (ja) |
| WO (1) | WO2012047464A1 (ja) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8946766B2 (en) * | 2013-02-27 | 2015-02-03 | International Business Machines Corporation | Bi-directional silicon controlled rectifier structure |
| US9240471B2 (en) | 2013-08-28 | 2016-01-19 | Globalfoundries Inc. | SCR with fin body regions for ESD protection |
| US20150229102A1 (en) * | 2014-02-13 | 2015-08-13 | Texas Instruments Incorporated | Method and apparatus for disabling a laser |
| KR102219516B1 (ko) | 2014-04-10 | 2021-02-25 | 삼성디스플레이 주식회사 | 표시 기판 |
| US9601480B2 (en) | 2014-08-21 | 2017-03-21 | Apple Inc. | Single junction bi-directional electrostatic discharge (ESD) protection circuit |
| US10026712B2 (en) * | 2014-12-02 | 2018-07-17 | Texas Instruments Incorporated | ESD protection circuit with stacked ESD cells having parallel active shunt |
| KR102374203B1 (ko) | 2015-08-31 | 2022-03-15 | 삼성전자주식회사 | 정전기 방전 보호 장치 및 이를 포함하는 전자 장치 |
| US10381340B2 (en) * | 2016-01-26 | 2019-08-13 | Nxp B.V. | Electrostatic discharge protection with integrated diode |
| US10079227B2 (en) | 2016-02-26 | 2018-09-18 | Texas Instruments Incorporated | Apparatus for rectified RC trigger of back-to-back MOS-SCR ESD protection |
| US10608431B2 (en) | 2017-10-26 | 2020-03-31 | Analog Devices, Inc. | Silicon controlled rectifier dynamic triggering and shutdown via control signal amplification |
| US10468513B1 (en) | 2018-08-30 | 2019-11-05 | Amazing Microelectronic Corp. | Bidirectional silicon-controlled rectifier |
| US11342323B2 (en) | 2019-05-30 | 2022-05-24 | Analog Devices, Inc. | High voltage tolerant circuit architecture for applications subject to electrical overstress fault conditions |
| CN110379806B (zh) * | 2019-07-17 | 2024-04-16 | 中国振华集团永光电子有限公司（国营第八七三厂） | 一种双向esd二极管及其制作方法 |
| US11362203B2 (en) | 2019-09-26 | 2022-06-14 | Analog Devices, Inc. | Electrical overstress protection for electronic systems subject to electromagnetic compatibility fault conditions |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5663860A (en) * | 1996-06-28 | 1997-09-02 | Harris Corporation | High voltage protection circuits |
| US5856214A (en) * | 1996-03-04 | 1999-01-05 | Winbond Electronics Corp. | Method of fabricating a low voltage zener-triggered SCR for ESD protection in integrated circuits |
| CN101728820A (zh) * | 2008-10-27 | 2010-06-09 | 台湾积体电路制造股份有限公司 | 用于触发双重scr esd保护的电源箝位电路和方法 |
| CN101752369A (zh) * | 2008-11-28 | 2010-06-23 | 索尼株式会社 | 半导体集成电路 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH437538A (de) * | 1965-12-22 | 1967-06-15 | Bbc Brown Boveri & Cie | Steuerbares Halbleiterelement |
| US5500546A (en) * | 1994-09-16 | 1996-03-19 | Texas Instruments Incorporated | ESD protection circuits using Zener diodes |
| JP2850801B2 (ja) * | 1995-07-28 | 1999-01-27 | 日本電気株式会社 | 半導体素子 |
| US5903415A (en) | 1997-12-11 | 1999-05-11 | International Business Machines Corporation | AP pinned spin valve sensor with pinning layer reset and ESD protection |
| US6011681A (en) | 1998-08-26 | 2000-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Whole-chip ESD protection for CMOS ICs using bi-directional SCRs |
| US6501630B1 (en) | 1999-12-17 | 2002-12-31 | Koninklijke Philips Electronics N.V. | Bi-directional ESD diode structure |
| GB0006350D0 (en) | 2000-03-17 | 2000-05-03 | Penny & Giles Controls Ltd | Joystick controller |
| US6594132B1 (en) | 2000-05-17 | 2003-07-15 | Sarnoff Corporation | Stacked silicon controlled rectifiers for ESD protection |
| US6580591B2 (en) | 2000-12-21 | 2003-06-17 | Intersil Americas, Inc. | Switched electrostatic discharge ring for integrated circuits with multiple power inputs |
| DE10126800B4 (de) | 2001-06-01 | 2010-07-01 | Infineon Technologies Ag | Verfahren und Vorrichtung zum Testen der ESD-Festigkeit eines Halbleiter-Bauelements |
| US6936896B2 (en) * | 2001-12-21 | 2005-08-30 | Freescale Semiconductor, Inc. | Semiconductor apparatus |
| NO316796B1 (no) | 2002-03-01 | 2004-05-10 | Idex Asa | Sensormodul for maling av strukturer i en overflate, saerlig en fingeroverflate |
| US6784029B1 (en) | 2002-04-12 | 2004-08-31 | National Semiconductor Corporation | Bi-directional ESD protection structure for BiCMOS technology |
| US6838707B2 (en) | 2002-05-06 | 2005-01-04 | Industrial Technology Research Institute | Bi-directional silicon controlled rectifier for electrostatic discharge protection |
| US7179691B1 (en) | 2002-07-29 | 2007-02-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for four direction low capacitance ESD protection |
| US7342282B2 (en) | 2004-09-10 | 2008-03-11 | Altera Corporation | Compact SCR device and method for integrated circuits |
| US6909149B2 (en) * | 2003-04-16 | 2005-06-21 | Sarnoff Corporation | Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies |
| US7541889B2 (en) | 2003-06-26 | 2009-06-02 | Intel Corporation | Pulse coupling apparatus, systems, and methods |
| US7394638B2 (en) | 2003-12-26 | 2008-07-01 | Stmicroelectronics Pvt. Ltd. | System and method for a whole-chip electrostatic discharge protection that is independent of relative supply rail voltages and supply sequencing |
| US7098509B2 (en) | 2004-01-02 | 2006-08-29 | Semiconductor Components Industries, L.L.C. | High energy ESD structure and method |
| JP2005197462A (ja) * | 2004-01-07 | 2005-07-21 | Toshiba Corp | 半導体装置及びその製造方法 |
| TWI258838B (en) | 2004-04-23 | 2006-07-21 | Nec Electronics Corp | Electrostatic protection device |
| US8890248B2 (en) | 2004-08-26 | 2014-11-18 | Texas Instruments Incorporation | Bi-directional ESD protection circuit |
| US7414287B2 (en) | 2005-02-21 | 2008-08-19 | Texas Instruments Incorporated | System and method for making a LDMOS device with electrostatic discharge protection |
| US7643258B2 (en) | 2005-05-31 | 2010-01-05 | Macronix International Co., Ltd. | Methods and apparatus for electrostatic discharge protection in a semiconductor circuit |
| US7427787B2 (en) * | 2005-07-08 | 2008-09-23 | Texas Instruments Incorporated | Guardringed SCR ESD protection |
| US7394133B1 (en) | 2005-08-31 | 2008-07-01 | National Semiconductor Corporation | Dual direction ESD clamp based on snapback NMOS cell with embedded SCR |
| KR100642651B1 (ko) * | 2005-09-26 | 2006-11-10 | 삼성전자주식회사 | 정전기 방전용 실리콘 제어 정류기 |
| US7639464B1 (en) | 2006-03-15 | 2009-12-29 | National Semiconductor Corporation | High holding voltage dual direction ESD clamp |
| US7538997B2 (en) * | 2006-05-31 | 2009-05-26 | Alpha & Omega Semiconductor, Ltd. | Circuit configurations to reduce snapback of a transient voltage suppressor |
| US8169751B2 (en) | 2006-06-27 | 2012-05-01 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetoresistive sensor having a structure for activating and deactivating electrostatic discharge prevention circuitry |
| US7619262B2 (en) | 2006-11-16 | 2009-11-17 | Delphi Technologies, Inc. | Method and device for electrostatic discharge protection |
| US8347019B2 (en) * | 2007-01-26 | 2013-01-01 | International Business Machines Corporation | Structure for hardware assisted bus state transition circuit using content addressable memories |
| JP5076725B2 (ja) | 2007-08-13 | 2012-11-21 | 富士電機株式会社 | 絶縁トランスおよび電力変換装置 |
| US7663190B2 (en) | 2007-10-08 | 2010-02-16 | Intersil Americas Inc. | Tunable voltage isolation ground to ground ESD clamp |
| US7773356B2 (en) | 2008-03-19 | 2010-08-10 | Fairchild Korea Semiconductor Ltd | Stacked SCR with high holding voltage |
| US7932582B2 (en) | 2008-06-18 | 2011-04-26 | National Semiconductor Corporation | Compact dual direction BJT clamps |
| US8039868B2 (en) | 2008-12-23 | 2011-10-18 | International Business Machines Corporation | Structure and method for an electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure |
-
2010
- 2010-10-05 US US12/898,013 patent/US8503140B2/en not_active Expired - Fee Related
-
2011
- 2011-09-14 DE DE112011102518.1T patent/DE112011102518B4/de active Active
- 2011-09-14 CN CN201180048091.0A patent/CN103155148B/zh active Active
- 2011-09-14 JP JP2013532816A patent/JP5775593B2/ja not_active Expired - Fee Related
- 2011-09-14 GB GB1306287.2A patent/GB2497704A/en not_active Withdrawn
- 2011-09-14 WO PCT/US2011/051500 patent/WO2012047464A1/en active Application Filing
- 2011-10-05 TW TW100136066A patent/TW201241927A/zh unknown
-
2013
- 2013-02-08 US US13/762,948 patent/US8760831B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5856214A (en) * | 1996-03-04 | 1999-01-05 | Winbond Electronics Corp. | Method of fabricating a low voltage zener-triggered SCR for ESD protection in integrated circuits |
| US5663860A (en) * | 1996-06-28 | 1997-09-02 | Harris Corporation | High voltage protection circuits |
| CN101728820A (zh) * | 2008-10-27 | 2010-06-09 | 台湾积体电路制造股份有限公司 | 用于触发双重scr esd保护的电源箝位电路和方法 |
| CN101752369A (zh) * | 2008-11-28 | 2010-06-23 | 索尼株式会社 | 半导体集成电路 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012047464A1 (en) | 2012-04-12 |
| US20120080717A1 (en) | 2012-04-05 |
| DE112011102518T5 (de) | 2013-09-26 |
| DE112011102518B4 (de) | 2018-09-06 |
| TW201241927A (en) | 2012-10-16 |
| GB201306287D0 (en) | 2013-05-22 |
| JP5775593B2 (ja) | 2015-09-09 |
| CN103155148A (zh) | 2013-06-12 |
| US8760831B2 (en) | 2014-06-24 |
| GB2497704A (en) | 2013-06-19 |
| US8503140B2 (en) | 2013-08-06 |
| JP2013545283A (ja) | 2013-12-19 |
| US20130161687A1 (en) | 2013-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103155148B (zh) | 用于高电压引脚esd保护的双向背对背堆叠scr、制造方法和设计结构 | |
| US9236374B2 (en) | Fin contacted electrostatic discharge (ESD) devices with improved heat distribution | |
| JP5746138B2 (ja) | Ｅｓｄ構造体、ｅｓｄ構造体を備える装置、及び、ｅｓｄ構造体の形成方法 | |
| CN103548140B (zh) | 具有多个阈值电压和有源阱偏置能力的cmos绝缘体上极薄硅的改进型结构 | |
| CN101393916B (zh) | 形成高电容二极管的方法及其结构 | |
| US8592263B2 (en) | FinFET diode with increased junction area | |
| CN104282770B (zh) | 具有整体深沟槽电容器的硅控整流器 | |
| KR20100073966A (ko) | 정전 방전(ｅｓｄ) 실리콘 제어 정류기(ｓｃｒ) 구조물을 위한 설계 구조물 및 방법 | |
| CN103199121A (zh) | 去耦电容器及其制造方法 | |
| CN101764137A (zh) | 带边沿工程设计的Vt偏移器件、结构及其方法 | |
| CN105655325A (zh) | 静电放电保护电路、结构及其制造方法 | |
| CN106229314A (zh) | 静电放电保护器件及其制造方法 | |
| CN107004667A (zh) | 具有内置电阻式存储器的电可重配置中介体 | |
| US20100321842A1 (en) | Electrostatic Discharge Structures and Methods of Manufacture | |
| CN103378160B (zh) | 与鳍式场效应晶体管技术兼容的器件结构 | |
| CN103378010A (zh) | 具有集成二极管的二极管触发可控硅整流器 | |
| CN103907191A (zh) | 具有应力增强的可调触发电压的可控硅整流器 | |
| KR20130135385A (ko) | 다이-레벨 정전기 방전(ｅｓｄ) 보호를 위한 전압 스위칭가능한 유전체 | |
| US10163892B2 (en) | Silicon controlled rectifiers (SCR), methods of manufacture and design structures | |
| CN104253157B (zh) | 薄本体开关晶体管 | |
| US9236449B2 (en) | High voltage laterally diffused metal oxide semiconductor | |
| CN103339630B (zh) | 具有非对称结构的绝缘体上半导体器件 | |
| CN111341770B (zh) | 一种低触发电压的esd保护结构、集成电路及设备 | |
| CN115810583A (zh) | 集成电路与其制造方法 | |
| CN113690297A (zh) | 氮化物器件及其制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |