CN103144024B - 使用高温热处理的300mm硅抛光片制造工艺 - Google Patents
使用高温热处理的300mm硅抛光片制造工艺 Download PDFInfo
- Publication number
- CN103144024B CN103144024B CN201110401693.1A CN201110401693A CN103144024B CN 103144024 B CN103144024 B CN 103144024B CN 201110401693 A CN201110401693 A CN 201110401693A CN 103144024 B CN103144024 B CN 103144024B
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- silicon chip
- heat treatment
- argon gas
- temperature
- temperature heat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Abstract
Description
Claims (4)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110401693.1A CN103144024B (zh) | 2011-12-06 | 2011-12-06 | 使用高温热处理的300mm硅抛光片制造工艺 |
PCT/CN2011/084041 WO2013082831A1 (zh) | 2011-12-06 | 2011-12-15 | 使用高温热处理的300mm硅抛光片制造工艺 |
KR1020147018302A KR101623669B1 (ko) | 2011-12-06 | 2011-12-15 | 고온 열처리를 이용한 300mm 폴리시드 실리콘 웨이퍼 제조 공정 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110401693.1A CN103144024B (zh) | 2011-12-06 | 2011-12-06 | 使用高温热处理的300mm硅抛光片制造工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103144024A CN103144024A (zh) | 2013-06-12 |
CN103144024B true CN103144024B (zh) | 2015-08-12 |
Family
ID=48542487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110401693.1A Active CN103144024B (zh) | 2011-12-06 | 2011-12-06 | 使用高温热处理的300mm硅抛光片制造工艺 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR101623669B1 (zh) |
CN (1) | CN103144024B (zh) |
WO (1) | WO2013082831A1 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103681314B (zh) * | 2013-12-09 | 2018-02-02 | 上海申和热磁电子有限公司 | 改善晶体内部微小杂质析出的热处理工艺 |
CN104952726A (zh) * | 2014-03-26 | 2015-09-30 | 中芯国际集成电路制造(上海)有限公司 | 一种用于无源器件的半导体衬底的制作方法 |
CN105280491A (zh) * | 2015-06-17 | 2016-01-27 | 上海超硅半导体有限公司 | 硅片及制造方法 |
JP6493105B2 (ja) * | 2015-09-04 | 2019-04-03 | 株式会社Sumco | エピタキシャルシリコンウェーハ |
CN106917143A (zh) * | 2015-12-25 | 2017-07-04 | 有研半导体材料有限公司 | 一种改善硅片内部氧沉淀及获得表面洁净区的方法 |
CN107738370A (zh) * | 2017-10-27 | 2018-02-27 | 四川永祥硅材料有限公司 | 一种多晶硅片制备工艺 |
CN109346433B (zh) * | 2018-09-26 | 2020-10-23 | 上海新傲科技股份有限公司 | 半导体衬底的键合方法以及键合后的半导体衬底 |
CN110473774A (zh) * | 2019-08-23 | 2019-11-19 | 大同新成新材料股份有限公司 | 一种芯片硅生产用无尘加工工艺 |
US11695048B2 (en) * | 2020-04-09 | 2023-07-04 | Sumco Corporation | Silicon wafer and manufacturing method of the same |
CN111430236B (zh) * | 2020-05-06 | 2021-05-14 | 合肥晶合集成电路股份有限公司 | 一种晶圆的退火方法 |
CN111785611A (zh) * | 2020-08-07 | 2020-10-16 | 厦门陆远科技有限公司 | 一种薄硅片的制作方法 |
JP7387685B2 (ja) * | 2021-09-17 | 2023-11-28 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、プログラム、および基板処理装置 |
CN116581063A (zh) * | 2023-05-29 | 2023-08-11 | 宁夏中欣晶圆半导体科技有限公司 | 硅片刻蚀工装及硅片刻蚀方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000349264A (ja) | 1998-12-04 | 2000-12-15 | Canon Inc | 半導体ウエハの製造方法、使用方法および利用方法 |
JP2001094079A (ja) * | 1999-09-20 | 2001-04-06 | Komatsu Electronic Metals Co Ltd | 貼り合せsoiウェーハの製造方法 |
JP2005311025A (ja) * | 2004-04-21 | 2005-11-04 | Naoetsu Electronics Co Ltd | シリコンウエーハの製造方法及びそれにより製造されたシリコンウエーハ |
CN1282231C (zh) * | 2004-08-17 | 2006-10-25 | 浙江大学 | 一种直拉硅片的内吸杂工艺 |
CN100338270C (zh) * | 2004-11-05 | 2007-09-19 | 北京有色金属研究总院 | 一种单晶硅抛光片热处理工艺 |
JP2006245301A (ja) * | 2005-03-03 | 2006-09-14 | Toshiba Ceramics Co Ltd | シリコンウェーハの製造方法 |
CN101656193B (zh) * | 2008-08-21 | 2011-09-28 | 北京有色金属研究总院 | 一种硅片加工工艺 |
CN101431021B (zh) * | 2008-12-11 | 2010-09-08 | 上海合晶硅材料有限公司 | 一种薄型硅单晶抛光片加工方法 |
CN101722461A (zh) * | 2009-11-19 | 2010-06-09 | 杭州海纳半导体有限公司 | 一种双抛片的加工方法 |
CN101733697B (zh) * | 2009-12-04 | 2012-01-25 | 北京有色金属研究总院 | 一种硅片抛光方法 |
-
2011
- 2011-12-06 CN CN201110401693.1A patent/CN103144024B/zh active Active
- 2011-12-15 KR KR1020147018302A patent/KR101623669B1/ko active IP Right Grant
- 2011-12-15 WO PCT/CN2011/084041 patent/WO2013082831A1/zh active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR20140100560A (ko) | 2014-08-14 |
CN103144024A (zh) | 2013-06-12 |
WO2013082831A1 (zh) | 2013-06-13 |
KR101623669B1 (ko) | 2016-05-23 |
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Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant before: GRINM Semiconductor Materials Co., Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: GRINM SEMICONDUCTOR MATERIALS CO., LTD. TO: GRINM ADVANCED MATERIALS CO., LTD. |
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Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150611 |
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Effective date of registration: 20150611 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Applicant after: You Yan Semi Materials Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant before: YOUYAN NEW MATERIAL CO., LTD. |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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