CN103681314B - 改善晶体内部微小杂质析出的热处理工艺 - Google Patents
改善晶体内部微小杂质析出的热处理工艺 Download PDFInfo
- Publication number
- CN103681314B CN103681314B CN201310659258.8A CN201310659258A CN103681314B CN 103681314 B CN103681314 B CN 103681314B CN 201310659258 A CN201310659258 A CN 201310659258A CN 103681314 B CN103681314 B CN 103681314B
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- technology
- heating processing
- crystals
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 43
- 238000005516 engineering process Methods 0.000 title claims abstract description 20
- 239000013078 crystal Substances 0.000 title claims abstract description 13
- 239000012535 impurity Substances 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 230000007423 decrease Effects 0.000 claims description 3
- 238000011282 treatment Methods 0.000 claims description 3
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 13
- 230000008569 process Effects 0.000 abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- 238000004904 shortening Methods 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000006911 nucleation Effects 0.000 abstract 1
- 238000010899 nucleation Methods 0.000 abstract 1
- 238000001556 precipitation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310659258.8A CN103681314B (zh) | 2013-12-09 | 2013-12-09 | 改善晶体内部微小杂质析出的热处理工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310659258.8A CN103681314B (zh) | 2013-12-09 | 2013-12-09 | 改善晶体内部微小杂质析出的热处理工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103681314A CN103681314A (zh) | 2014-03-26 |
CN103681314B true CN103681314B (zh) | 2018-02-02 |
Family
ID=50318509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310659258.8A Active CN103681314B (zh) | 2013-12-09 | 2013-12-09 | 改善晶体内部微小杂质析出的热处理工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103681314B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1050792A (zh) * | 1990-08-20 | 1991-04-17 | 河北工学院 | 硅半导体器件用硅片的缺陷控制工艺 |
CN1846017A (zh) * | 2003-07-08 | 2006-10-11 | Memc电子材料有限公司 | 用于制备稳定的理想的氧沉淀硅片的方法 |
CN102168314A (zh) * | 2011-03-23 | 2011-08-31 | 浙江大学 | 直拉硅片的内吸杂工艺 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103144024B (zh) * | 2011-12-06 | 2015-08-12 | 有研半导体材料有限公司 | 使用高温热处理的300mm硅抛光片制造工艺 |
-
2013
- 2013-12-09 CN CN201310659258.8A patent/CN103681314B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1050792A (zh) * | 1990-08-20 | 1991-04-17 | 河北工学院 | 硅半导体器件用硅片的缺陷控制工艺 |
CN1846017A (zh) * | 2003-07-08 | 2006-10-11 | Memc电子材料有限公司 | 用于制备稳定的理想的氧沉淀硅片的方法 |
CN102168314A (zh) * | 2011-03-23 | 2011-08-31 | 浙江大学 | 直拉硅片的内吸杂工艺 |
Also Published As
Publication number | Publication date |
---|---|
CN103681314A (zh) | 2014-03-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104576307B (zh) | 一种消除12英寸单晶硅外延片表面微颗粒团聚的方法 | |
CN103177972B (zh) | 蓝宝石衬底材料的退火工艺 | |
CN102168314B (zh) | 直拉硅片的内吸杂工艺 | |
CN111892059B (zh) | 一种高纯石英砂的制备方法 | |
WO2018076902A1 (zh) | 晶棒的制作方法 | |
CN103681314B (zh) | 改善晶体内部微小杂质析出的热处理工艺 | |
CN109576647A (zh) | 一种超薄滤光片薄膜制备方法 | |
CN107435088A (zh) | 螺栓的热处理工艺 | |
CN103745920A (zh) | 一种半导体工艺中控制晶圆冷却的方法 | |
CN104762656B (zh) | 大直径直拉硅片的一种内吸杂工艺 | |
CN103643220A (zh) | 一种减少低压炉管内杂质颗粒的方法 | |
CN114232095B (zh) | 一种优化碳化硅籽晶表面初期成核的方法 | |
TWI829979B (zh) | 下電極元件、等離子體處理裝置及其工作方法 | |
CN105185691A (zh) | 一种消除首片效应的方法 | |
CN112309815B (zh) | 生产led外延片的mocvd系统维护保养后的恢复方法 | |
CN113436998A (zh) | 一种超临界二氧化碳硅块清洗装置、硅块处理系统及方法 | |
CN101774589A (zh) | 低羟基高纯度水晶粉的制备方法 | |
CN107099761B (zh) | 一种薄壁铝合金零件的热处理方法 | |
CN104190180A (zh) | 气体过滤方法 | |
CN113401872B (zh) | 一种集成电路用盐酸的生产工艺 | |
CN110952145A (zh) | 一种改善锗单晶内应力及内部缺微陷的热处理方法 | |
RU2376675C1 (ru) | Способ первичного отжига для обработки карбид-кремниевой трубы | |
CN112551532B (zh) | 一种连熔高温热态法去除石英粉中杂质的工艺 | |
CN107256828A (zh) | 一种提高三极管k值的磷硅玻璃退火工艺 | |
CN102586886A (zh) | 一种用于去除硅晶片表面氧沉积物的硅晶片退火方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
EXSB | Decision made by sipo to initiate substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191220 Address after: 200444 Building 1, No. 181, Shanlian Road, Baoshan District, Shanghai Patentee after: Shanghai xinxinjingyuan Semiconductor Technology Co., Ltd Address before: 200444 Baoshan District, Baoshan City Industrial Park Road, No., Hill Road, No. 181 Patentee before: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Address before: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee before: Shanghai xinxinjingyuan Semiconductor Technology Co.,Ltd. |