CN103122455B - 用于执行等离子体化学气相沉积过程的装置 - Google Patents

用于执行等离子体化学气相沉积过程的装置 Download PDF

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Publication number
CN103122455B
CN103122455B CN201210480714.8A CN201210480714A CN103122455B CN 103122455 B CN103122455 B CN 103122455B CN 201210480714 A CN201210480714 A CN 201210480714A CN 103122455 B CN103122455 B CN 103122455B
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cavity
resonator
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English (en)
Chinese (zh)
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CN103122455A (zh
Inventor
M·J·N·范斯特拉伦
I·米利塞维克
J·A·哈特苏伊克
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Nokia Inc
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Nokia Inc
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
    • C03B37/01815—Reactant deposition burners or deposition heating means
    • C03B37/01823—Plasma deposition burners or heating means
    • C03B37/0183—Plasma deposition burners or heating means for plasma within a tube substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H01J37/32256—Tuning means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
CN201210480714.8A 2011-11-17 2012-11-16 用于执行等离子体化学气相沉积过程的装置 Active CN103122455B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2007809 2011-11-17
NL2007809A NL2007809C2 (en) 2011-11-17 2011-11-17 An apparatus for performing a plasma chemical vapour deposition process.

Publications (2)

Publication Number Publication Date
CN103122455A CN103122455A (zh) 2013-05-29
CN103122455B true CN103122455B (zh) 2017-05-24

Family

ID=47191584

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Application Number Title Priority Date Filing Date
CN201210480714.8A Active CN103122455B (zh) 2011-11-17 2012-11-16 用于执行等离子体化学气相沉积过程的装置

Country Status (9)

Country Link
US (1) US9376753B2 (enExample)
EP (1) EP2594660B1 (enExample)
JP (1) JP6227240B2 (enExample)
CN (1) CN103122455B (enExample)
BR (1) BR102012029201A2 (enExample)
DK (1) DK2594660T3 (enExample)
NL (1) NL2007809C2 (enExample)
PL (1) PL2594660T3 (enExample)
RU (1) RU2625664C2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105244251B (zh) * 2015-11-03 2017-11-17 长飞光纤光缆股份有限公司 一种大功率等离子体微波谐振腔
NL2017575B1 (en) 2016-10-04 2018-04-13 Draka Comteq Bv A method and an apparatus for performing a plasma chemical vapour deposition process and a method
CN106987827B (zh) * 2017-04-14 2019-03-29 太原理工大学 等离子体化学气相沉积微波谐振腔及装置
CN110459853A (zh) * 2019-08-21 2019-11-15 上海至纯洁净系统科技股份有限公司 一种适用于pcvd工艺的分体式易调谐微波谐振腔
NL2028245B1 (en) * 2021-05-19 2022-12-05 Draka Comteq Bv A plasma chemical vapor deposition apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037666A (en) * 1989-08-03 1991-08-06 Uha Mikakuto Precision Engineering Research Institute Co., Ltd. High-speed film forming method by microwave plasma chemical vapor deposition (CVD) under high pressure
US20040095074A1 (en) * 2001-01-18 2004-05-20 Nobuo Ishii Plasma device and plasma generating method
CN101089223A (zh) * 2006-06-16 2007-12-19 德雷卡通信技术公司 执行等离子化学气相沉积工艺的设备和制造光纤的方法
US20080226840A1 (en) * 2002-02-11 2008-09-18 Board Of Trustees Of Michigan State University Process for synthesizing uniform nanocrystalline films
CN101298664A (zh) * 2007-05-01 2008-11-05 德雷卡通信技术公司 执行等离子体化学气相沉积的装置和制造光学预制件的方法

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US4125389A (en) 1977-02-10 1978-11-14 Northern Telecom Limited Method for manufacturing an optical fibre with plasma activated deposition in a tube
JPS62290054A (ja) * 1986-06-09 1987-12-16 Mitsubishi Electric Corp マイクロ波によるガスのイオン化方法およびイオン源装置
JPH02107778A (ja) * 1988-10-18 1990-04-19 Canon Inc 偏波制御マイクロ波プラズマ処理装置
JPH06140186A (ja) * 1992-10-22 1994-05-20 Mitsubishi Heavy Ind Ltd プラズマ製造方法
DE19600223A1 (de) * 1996-01-05 1997-07-17 Ralf Dr Dipl Phys Spitzl Vorrichtung zur Erzeugung von Plasmen mittels Mikrowellen
JP4326146B2 (ja) * 1997-12-31 2009-09-02 プラズマ オプティカル ファイバー ベスローテン フェンノートシャップ Ｐｃｖｄ装置及び光ファイバ、プレフォームロッド及びジャケットチューブを製造する方法並びにこれにより製造される光ファイバ
US6715441B2 (en) 1997-12-31 2004-04-06 Plasma Optical Fibre B.V. PCVD apparatus and a method of manufacturing an optical fiber, a preform rod and a jacket tube as well as the optical fiber manufactured therewith
DE19847848C1 (de) * 1998-10-16 2000-05-11 R3 T Gmbh Rapid Reactive Radic Vorrichtung und Erzeugung angeregter/ionisierter Teilchen in einem Plasma
US6951798B2 (en) * 2001-06-08 2005-10-04 Wisconsin Alumni Research Foundation Method of bonding a stack of layers by electromagnetic induction heating
JP4782984B2 (ja) * 2001-12-04 2011-09-28 ドゥラカ ファイバー テクノロジー ベー ヴェー プラズマキャビティ内に電磁マイクロ波放射を適用する装置を用いたプラズマ処理装置及び方法
NL1025155C2 (nl) * 2003-12-30 2005-07-04 Draka Fibre Technology Bv Inrichting voor het uitvoeren van PCVD, alsmede werkwijze voor het vervaardigen van een voorvorm.
JP4852997B2 (ja) * 2005-11-25 2012-01-11 東京エレクトロン株式会社 マイクロ波導入装置及びプラズマ処理装置
KR100861412B1 (ko) 2006-06-13 2008-10-07 조영상 다결정 실리콘 잉곳 제조장치
FR2903622B1 (fr) 2006-07-17 2008-10-03 Sidel Participations Dispositif pour le depot d'un revetement sur une face interne d'un recipient
US20120186747A1 (en) * 2011-01-26 2012-07-26 Obama Shinji Plasma processing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037666A (en) * 1989-08-03 1991-08-06 Uha Mikakuto Precision Engineering Research Institute Co., Ltd. High-speed film forming method by microwave plasma chemical vapor deposition (CVD) under high pressure
US20040095074A1 (en) * 2001-01-18 2004-05-20 Nobuo Ishii Plasma device and plasma generating method
US20080226840A1 (en) * 2002-02-11 2008-09-18 Board Of Trustees Of Michigan State University Process for synthesizing uniform nanocrystalline films
CN101089223A (zh) * 2006-06-16 2007-12-19 德雷卡通信技术公司 执行等离子化学气相沉积工艺的设备和制造光纤的方法
CN101298664A (zh) * 2007-05-01 2008-11-05 德雷卡通信技术公司 执行等离子体化学气相沉积的装置和制造光学预制件的方法

Also Published As

Publication number Publication date
JP2013108179A (ja) 2013-06-06
US20130125817A1 (en) 2013-05-23
BR102012029201A2 (pt) 2018-02-27
JP6227240B2 (ja) 2017-11-08
RU2625664C2 (ru) 2017-07-18
RU2012143706A (ru) 2014-04-20
US9376753B2 (en) 2016-06-28
EP2594660A1 (en) 2013-05-22
DK2594660T3 (da) 2020-09-07
PL2594660T3 (pl) 2020-11-16
CN103122455A (zh) 2013-05-29
EP2594660B1 (en) 2020-06-17
NL2007809C2 (en) 2013-05-21

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