BR102012029201A2 - Aparelho para realizar um processo de deposição de vapor químico por plasma. - Google Patents
Aparelho para realizar um processo de deposição de vapor químico por plasma. Download PDFInfo
- Publication number
- BR102012029201A2 BR102012029201A2 BR102012029201-7A BR102012029201A BR102012029201A2 BR 102012029201 A2 BR102012029201 A2 BR 102012029201A2 BR 102012029201 A BR102012029201 A BR 102012029201A BR 102012029201 A2 BR102012029201 A2 BR 102012029201A2
- Authority
- BR
- Brazil
- Prior art keywords
- cylindrical
- cavity
- resonator
- resonant cavity
- cylindrical axis
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000005229 chemical vapour deposition Methods 0.000 title abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims 1
- 238000005019 vapor deposition process Methods 0.000 abstract 1
- 230000021615 conjugation Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
- C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
- C03B37/01815—Reactant deposition burners or deposition heating means
- C03B37/01823—Plasma deposition burners or heating means
- C03B37/0183—Plasma deposition burners or heating means for plasma within a tube substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
- H01J37/32256—Tuning means
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2007809 | 2011-11-17 | ||
| NL2007809A NL2007809C2 (en) | 2011-11-17 | 2011-11-17 | An apparatus for performing a plasma chemical vapour deposition process. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR102012029201A2 true BR102012029201A2 (pt) | 2018-02-27 |
Family
ID=47191584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR102012029201-7A BR102012029201A2 (pt) | 2011-11-17 | 2012-11-14 | Aparelho para realizar um processo de deposição de vapor químico por plasma. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9376753B2 (enExample) |
| EP (1) | EP2594660B1 (enExample) |
| JP (1) | JP6227240B2 (enExample) |
| CN (1) | CN103122455B (enExample) |
| BR (1) | BR102012029201A2 (enExample) |
| DK (1) | DK2594660T3 (enExample) |
| NL (1) | NL2007809C2 (enExample) |
| PL (1) | PL2594660T3 (enExample) |
| RU (1) | RU2625664C2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105244251B (zh) * | 2015-11-03 | 2017-11-17 | 长飞光纤光缆股份有限公司 | 一种大功率等离子体微波谐振腔 |
| NL2017575B1 (en) | 2016-10-04 | 2018-04-13 | Draka Comteq Bv | A method and an apparatus for performing a plasma chemical vapour deposition process and a method |
| CN106987827B (zh) * | 2017-04-14 | 2019-03-29 | 太原理工大学 | 等离子体化学气相沉积微波谐振腔及装置 |
| CN110459853A (zh) * | 2019-08-21 | 2019-11-15 | 上海至纯洁净系统科技股份有限公司 | 一种适用于pcvd工艺的分体式易调谐微波谐振腔 |
| NL2028245B1 (en) * | 2021-05-19 | 2022-12-05 | Draka Comteq Bv | A plasma chemical vapor deposition apparatus |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4125389A (en) | 1977-02-10 | 1978-11-14 | Northern Telecom Limited | Method for manufacturing an optical fibre with plasma activated deposition in a tube |
| JPS62290054A (ja) * | 1986-06-09 | 1987-12-16 | Mitsubishi Electric Corp | マイクロ波によるガスのイオン化方法およびイオン源装置 |
| JPH02107778A (ja) * | 1988-10-18 | 1990-04-19 | Canon Inc | 偏波制御マイクロ波プラズマ処理装置 |
| JPH03193880A (ja) * | 1989-08-03 | 1991-08-23 | Mikakutou Seimitsu Kogaku Kenkyusho:Kk | 高圧力下でのマイクロ波プラズマcvdによる高速成膜方法及びその装置 |
| JPH06140186A (ja) * | 1992-10-22 | 1994-05-20 | Mitsubishi Heavy Ind Ltd | プラズマ製造方法 |
| DE19600223A1 (de) * | 1996-01-05 | 1997-07-17 | Ralf Dr Dipl Phys Spitzl | Vorrichtung zur Erzeugung von Plasmen mittels Mikrowellen |
| JP4326146B2 (ja) * | 1997-12-31 | 2009-09-02 | プラズマ オプティカル ファイバー ベスローテン フェンノートシャップ | Pcvd装置及び光ファイバ、プレフォームロッド及びジャケットチューブを製造する方法並びにこれにより製造される光ファイバ |
| US6715441B2 (en) | 1997-12-31 | 2004-04-06 | Plasma Optical Fibre B.V. | PCVD apparatus and a method of manufacturing an optical fiber, a preform rod and a jacket tube as well as the optical fiber manufactured therewith |
| DE19847848C1 (de) * | 1998-10-16 | 2000-05-11 | R3 T Gmbh Rapid Reactive Radic | Vorrichtung und Erzeugung angeregter/ionisierter Teilchen in einem Plasma |
| JP3625197B2 (ja) * | 2001-01-18 | 2005-03-02 | 東京エレクトロン株式会社 | プラズマ装置およびプラズマ生成方法 |
| US6951798B2 (en) * | 2001-06-08 | 2005-10-04 | Wisconsin Alumni Research Foundation | Method of bonding a stack of layers by electromagnetic induction heating |
| JP4782984B2 (ja) * | 2001-12-04 | 2011-09-28 | ドゥラカ ファイバー テクノロジー ベー ヴェー | プラズマキャビティ内に電磁マイクロ波放射を適用する装置を用いたプラズマ処理装置及び方法 |
| US20030152700A1 (en) * | 2002-02-11 | 2003-08-14 | Board Of Trustees Operating Michigan State University | Process for synthesizing uniform nanocrystalline films |
| NL1025155C2 (nl) * | 2003-12-30 | 2005-07-04 | Draka Fibre Technology Bv | Inrichting voor het uitvoeren van PCVD, alsmede werkwijze voor het vervaardigen van een voorvorm. |
| JP4852997B2 (ja) * | 2005-11-25 | 2012-01-11 | 東京エレクトロン株式会社 | マイクロ波導入装置及びプラズマ処理装置 |
| KR100861412B1 (ko) | 2006-06-13 | 2008-10-07 | 조영상 | 다결정 실리콘 잉곳 제조장치 |
| NL1032015C2 (nl) * | 2006-06-16 | 2008-01-08 | Draka Comteq Bv | Inrichting voor het uitvoeren van een plasma chemische dampdepositie (PCVD) en werkwijze ter vervaardiging van een optische vezel. |
| FR2903622B1 (fr) | 2006-07-17 | 2008-10-03 | Sidel Participations | Dispositif pour le depot d'un revetement sur une face interne d'un recipient |
| NL1033783C2 (nl) | 2007-05-01 | 2008-11-06 | Draka Comteq Bv | Inrichting voor het uitvoeren van een plasma chemische dampdepositie alsmede werkwijze ter vervaardiging van een optische voorvorm. |
| US20120186747A1 (en) * | 2011-01-26 | 2012-07-26 | Obama Shinji | Plasma processing apparatus |
-
2011
- 2011-11-17 NL NL2007809A patent/NL2007809C2/en not_active IP Right Cessation
-
2012
- 2012-10-12 RU RU2012143706A patent/RU2625664C2/ru active
- 2012-11-09 US US13/672,706 patent/US9376753B2/en active Active
- 2012-11-14 DK DK12192493.0T patent/DK2594660T3/da active
- 2012-11-14 EP EP12192493.0A patent/EP2594660B1/en active Active
- 2012-11-14 PL PL12192493T patent/PL2594660T3/pl unknown
- 2012-11-14 BR BR102012029201-7A patent/BR102012029201A2/pt not_active Application Discontinuation
- 2012-11-16 CN CN201210480714.8A patent/CN103122455B/zh active Active
- 2012-11-19 JP JP2012253248A patent/JP6227240B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013108179A (ja) | 2013-06-06 |
| CN103122455B (zh) | 2017-05-24 |
| US20130125817A1 (en) | 2013-05-23 |
| JP6227240B2 (ja) | 2017-11-08 |
| RU2625664C2 (ru) | 2017-07-18 |
| RU2012143706A (ru) | 2014-04-20 |
| US9376753B2 (en) | 2016-06-28 |
| EP2594660A1 (en) | 2013-05-22 |
| DK2594660T3 (da) | 2020-09-07 |
| PL2594660T3 (pl) | 2020-11-16 |
| CN103122455A (zh) | 2013-05-29 |
| EP2594660B1 (en) | 2020-06-17 |
| NL2007809C2 (en) | 2013-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| BR102012029201A2 (pt) | Aparelho para realizar um processo de deposição de vapor químico por plasma. | |
| KR101763277B1 (ko) | 플라즈마 발생용 안테나 및 이를 구비하는 플라즈마 처리 장치 | |
| KR101229843B1 (ko) | 플라즈마 처리 장치 | |
| JP6076337B2 (ja) | プラズマチャンバのための伝送線rfアプリケータ | |
| US6401653B1 (en) | Microwave plasma generator | |
| CN106128911A (zh) | 一种用于行波管的矩形慢波线 | |
| JPH08148911A (ja) | 導波管同軸変換器及び導波管整合回路 | |
| JP6931461B2 (ja) | プラズマ発生用のアンテナ、それを備えるプラズマ処理装置及びアンテナ構造 | |
| US5006825A (en) | Coaxial line coupler with fluid cooled inner conductor | |
| US10594014B2 (en) | Connection structure of high-frequency transmission line | |
| CN108389766A (zh) | 一种微带周期曲折线慢波结构 | |
| KR20180064490A (ko) | 동축 애플리케이터로 플라즈마를 생성하기 위한 기초 장치 | |
| US20150013907A1 (en) | Microwave plasma processing apparatus, slot antenna, and semiconductor device | |
| EP3598852B1 (en) | High-frequency coupler | |
| JP4967107B2 (ja) | マイクロ波導入器、プラズマ発生装置及びプラズマ処理装置 | |
| JP3790216B2 (ja) | プラズマ発生装置 | |
| JP5273759B1 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
| US20190301813A1 (en) | Sleeve-type heat conducting structure | |
| JP2013175480A (ja) | プラズマ処理装置およびプラズマ処理方法 | |
| US2766432A (en) | Wave guide transition | |
| KR102901467B1 (ko) | 안테나 및 플라즈마 처리 장치 | |
| JP7360934B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
| KR101310753B1 (ko) | 유도 안테나 | |
| JP2024125687A (ja) | プラズマ発生装置およびプラズマ処理装置 | |
| CN107134657B (zh) | 一种周期分布的共焦波导介质陶瓷环微波吸收装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B03A | Publication of a patent application or of a certificate of addition of invention [chapter 3.1 patent gazette] | ||
| B25G | Requested change of headquarter approved |
Owner name: DRAKA COMTEQ, B.V (NL) |
|
| B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
| B06T | Formal requirements before examination [chapter 6.20 patent gazette] | ||
| B11E | Dismissal acc. art. 34 of ipl - requirements for examination incomplete | ||
| B11T | Dismissal of application maintained [chapter 11.20 patent gazette] |