RU2625664C2 - Устройство для осуществления процесса плазмохимического осаждения из паровой фазы - Google Patents

Устройство для осуществления процесса плазмохимического осаждения из паровой фазы Download PDF

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RU2625664C2
RU2625664C2 RU2012143706A RU2012143706A RU2625664C2 RU 2625664 C2 RU2625664 C2 RU 2625664C2 RU 2012143706 A RU2012143706 A RU 2012143706A RU 2012143706 A RU2012143706 A RU 2012143706A RU 2625664 C2 RU2625664 C2 RU 2625664C2
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cavity
resonator
axis
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RU2012143706A
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Russian (ru)
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RU2012143706A (ru
Inventor
Стрален Матхёс Якобус Николас ван
Игорь Милисевик
Йоханнес Антон Хартсёйкер
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Драка Комтек Б.В.
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
    • C03B37/01815—Reactant deposition burners or deposition heating means
    • C03B37/01823—Plasma deposition burners or heating means
    • C03B37/0183—Plasma deposition burners or heating means for plasma within a tube substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H01J37/32256—Tuning means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
RU2012143706A 2011-11-17 2012-10-12 Устройство для осуществления процесса плазмохимического осаждения из паровой фазы RU2625664C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2007809 2011-11-17
NL2007809A NL2007809C2 (en) 2011-11-17 2011-11-17 An apparatus for performing a plasma chemical vapour deposition process.

Publications (2)

Publication Number Publication Date
RU2012143706A RU2012143706A (ru) 2014-04-20
RU2625664C2 true RU2625664C2 (ru) 2017-07-18

Family

ID=47191584

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2012143706A RU2625664C2 (ru) 2011-11-17 2012-10-12 Устройство для осуществления процесса плазмохимического осаждения из паровой фазы

Country Status (9)

Country Link
US (1) US9376753B2 (enExample)
EP (1) EP2594660B1 (enExample)
JP (1) JP6227240B2 (enExample)
CN (1) CN103122455B (enExample)
BR (1) BR102012029201A2 (enExample)
DK (1) DK2594660T3 (enExample)
NL (1) NL2007809C2 (enExample)
PL (1) PL2594660T3 (enExample)
RU (1) RU2625664C2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105244251B (zh) * 2015-11-03 2017-11-17 长飞光纤光缆股份有限公司 一种大功率等离子体微波谐振腔
NL2017575B1 (en) 2016-10-04 2018-04-13 Draka Comteq Bv A method and an apparatus for performing a plasma chemical vapour deposition process and a method
CN106987827B (zh) * 2017-04-14 2019-03-29 太原理工大学 等离子体化学气相沉积微波谐振腔及装置
CN110459853A (zh) * 2019-08-21 2019-11-15 上海至纯洁净系统科技股份有限公司 一种适用于pcvd工艺的分体式易调谐微波谐振腔
NL2028245B1 (en) * 2021-05-19 2022-12-05 Draka Comteq Bv A plasma chemical vapor deposition apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198224B1 (en) * 1996-01-05 2001-03-06 Ralf Spitzl Microwave plasma generator with the short cross-sectional side of the resonator parallel to the chamber axis
US6260510B1 (en) * 1997-12-31 2001-07-17 Plasma Optical Fibre B.V. PCVD apparatus and method of manufacturing an optical fiber, a preform rod and a jacket tube as well as the optical fiber manufactured therewith
EP1867610A1 (en) * 2006-06-16 2007-12-19 Draka comteq B.V. Apparatus for carrying out a plasma chemical vapour deposition (PCVD) process and method for manufacturing an optical fibre
RU2366758C2 (ru) * 2003-12-30 2009-09-10 Драка Файбр Текнолоджи Б.В. Устройство для плазменного химического осаждения из газовой фазы и способ изготовления заготовки
US20090266487A1 (en) * 2005-11-25 2009-10-29 Tokyo Electron Limited Microwave introduction device

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US4125389A (en) 1977-02-10 1978-11-14 Northern Telecom Limited Method for manufacturing an optical fibre with plasma activated deposition in a tube
JPS62290054A (ja) * 1986-06-09 1987-12-16 Mitsubishi Electric Corp マイクロ波によるガスのイオン化方法およびイオン源装置
JPH02107778A (ja) * 1988-10-18 1990-04-19 Canon Inc 偏波制御マイクロ波プラズマ処理装置
JPH03193880A (ja) * 1989-08-03 1991-08-23 Mikakutou Seimitsu Kogaku Kenkyusho:Kk 高圧力下でのマイクロ波プラズマｃｖｄによる高速成膜方法及びその装置
JPH06140186A (ja) * 1992-10-22 1994-05-20 Mitsubishi Heavy Ind Ltd プラズマ製造方法
US6715441B2 (en) 1997-12-31 2004-04-06 Plasma Optical Fibre B.V. PCVD apparatus and a method of manufacturing an optical fiber, a preform rod and a jacket tube as well as the optical fiber manufactured therewith
DE19847848C1 (de) * 1998-10-16 2000-05-11 R3 T Gmbh Rapid Reactive Radic Vorrichtung und Erzeugung angeregter/ionisierter Teilchen in einem Plasma
JP3625197B2 (ja) * 2001-01-18 2005-03-02 東京エレクトロン株式会社 プラズマ装置およびプラズマ生成方法
US6951798B2 (en) * 2001-06-08 2005-10-04 Wisconsin Alumni Research Foundation Method of bonding a stack of layers by electromagnetic induction heating
JP4782984B2 (ja) * 2001-12-04 2011-09-28 ドゥラカ ファイバー テクノロジー ベー ヴェー プラズマキャビティ内に電磁マイクロ波放射を適用する装置を用いたプラズマ処理装置及び方法
US20030152700A1 (en) * 2002-02-11 2003-08-14 Board Of Trustees Operating Michigan State University Process for synthesizing uniform nanocrystalline films
KR100861412B1 (ko) 2006-06-13 2008-10-07 조영상 다결정 실리콘 잉곳 제조장치
FR2903622B1 (fr) 2006-07-17 2008-10-03 Sidel Participations Dispositif pour le depot d'un revetement sur une face interne d'un recipient
NL1033783C2 (nl) 2007-05-01 2008-11-06 Draka Comteq Bv Inrichting voor het uitvoeren van een plasma chemische dampdepositie alsmede werkwijze ter vervaardiging van een optische voorvorm.
US20120186747A1 (en) * 2011-01-26 2012-07-26 Obama Shinji Plasma processing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198224B1 (en) * 1996-01-05 2001-03-06 Ralf Spitzl Microwave plasma generator with the short cross-sectional side of the resonator parallel to the chamber axis
US6260510B1 (en) * 1997-12-31 2001-07-17 Plasma Optical Fibre B.V. PCVD apparatus and method of manufacturing an optical fiber, a preform rod and a jacket tube as well as the optical fiber manufactured therewith
RU2366758C2 (ru) * 2003-12-30 2009-09-10 Драка Файбр Текнолоджи Б.В. Устройство для плазменного химического осаждения из газовой фазы и способ изготовления заготовки
US20090266487A1 (en) * 2005-11-25 2009-10-29 Tokyo Electron Limited Microwave introduction device
EP1867610A1 (en) * 2006-06-16 2007-12-19 Draka comteq B.V. Apparatus for carrying out a plasma chemical vapour deposition (PCVD) process and method for manufacturing an optical fibre

Also Published As

Publication number Publication date
JP2013108179A (ja) 2013-06-06
CN103122455B (zh) 2017-05-24
US20130125817A1 (en) 2013-05-23
BR102012029201A2 (pt) 2018-02-27
JP6227240B2 (ja) 2017-11-08
RU2012143706A (ru) 2014-04-20
US9376753B2 (en) 2016-06-28
EP2594660A1 (en) 2013-05-22
DK2594660T3 (da) 2020-09-07
PL2594660T3 (pl) 2020-11-16
CN103122455A (zh) 2013-05-29
EP2594660B1 (en) 2020-06-17
NL2007809C2 (en) 2013-05-21

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