JP2013108179A - プラズマ化学蒸着を行うための装置 - Google Patents
プラズマ化学蒸着を行うための装置 Download PDFInfo
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- JP2013108179A JP2013108179A JP2012253248A JP2012253248A JP2013108179A JP 2013108179 A JP2013108179 A JP 2013108179A JP 2012253248 A JP2012253248 A JP 2012253248A JP 2012253248 A JP2012253248 A JP 2012253248A JP 2013108179 A JP2013108179 A JP 2013108179A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
- C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
- C03B37/01815—Reactant deposition burners or deposition heating means
- C03B37/01823—Plasma deposition burners or heating means
- C03B37/0183—Plasma deposition burners or heating means for plasma within a tube substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
- H01J37/32256—Tuning means
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】主に円筒状である共鳴体2を備えているプラズマ化学蒸着法を行うための装置であって、該共鳴体は、円筒軸Cに関して実質的に回転対称な形状を有する共鳴空洞5を取り囲む、外側円筒状壁4を備えており、該共鳴体は向き合う円筒軸方向において共鳴空洞の境界を定める複数の側壁部分をさらに備えている該装置において、該装置は、該外側円筒状壁を通って共鳴空洞へと延在している端を有するマイクロ波のガイド3をさらに備えており、かつ円筒方向における共鳴空洞の長さは円筒軸までの半径方向の距離の関数として変化する。
【選択図】図1
Description
Claims (9)
- 主に円筒状である共鳴体を備えている、プラズマ化学蒸着法を行うための装置であって、該共鳴体は、円筒軸に関して実質的に回転対称な形状を有する共鳴空洞を取り囲む外側円筒状壁を備えており、該共鳴体は、向き合う複数の円筒軸方向において共鳴空洞の境界を定める複数の側壁部分をさらに備えている該装置において、該装置は、該外側円筒状壁を通って共鳴空洞内へと延在している端を有するマイクロ波のガイドをさらに備えており、かつ円筒方向における共鳴空洞の長さは円筒軸までの半径方向の距離の関数として変化する、前記装置。
- 該共鳴体が、円筒方向における空洞の側表面を少なくとも部分的に画定する環状要素を含んでいる、請求項1に記載の装置。
- 該共鳴体の円筒軸と実質的に一致する長手方向の軸を有しかつ該空洞の反対方向の側表面に向かって先細りになっている円錐の表面により、該共鳴空洞が円筒方向において少なくとも部分的に境界を定められている、請求項1又は2に記載の装置。
- ある範囲において、円筒軸に関して増加する半径方向の距離の関数として、空洞の円筒長さが増加する、請求項1〜3のいずれか1項に記載の装置。
- アプリケーターが、円筒軸に向かう半径方向において共鳴空洞の境界を定める内側円筒状壁をさらに備えており、かつ該内側円筒状壁が円筒軸の周りにおける円周方向に延在するスリットを有する、請求項1〜4のいずれか1項に記載の装置。
- 該環状要素が、該共鳴体の側壁部分及び/又は内側円筒状壁と一体化されている、請求項1〜5のいずれか1項に記載の装置。
- 該空洞の長手方向の端において、該空洞の側表面が円筒軸に関して実質的に垂直に、好ましくは少なくとも約1mmの長さに沿って延在している、請求項1〜6のいずれか1項に記載の装置。
- 該環状要素が、該内側円筒状壁と該外側円筒状壁との間の半径方向及び側壁部分とスリットのエッジとの間の円筒方向において境界を定められた体積の一部を満たし、該環状要素により満たされた体積部分が約10%〜約95%の範囲である、請求項1〜7のいずれか1項に記載の装置。
- 該マイクロ波ガイドの第二の端へのマイクロ波発生装置のコネクターをさらに備える、請求項1〜8のいずれか1項に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL2007809A NL2007809C2 (en) | 2011-11-17 | 2011-11-17 | An apparatus for performing a plasma chemical vapour deposition process. |
NL2007809 | 2011-11-17 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013108179A true JP2013108179A (ja) | 2013-06-06 |
JP2013108179A5 JP2013108179A5 (ja) | 2016-01-14 |
JP6227240B2 JP6227240B2 (ja) | 2017-11-08 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012253248A Active JP6227240B2 (ja) | 2011-11-17 | 2012-11-19 | プラズマ化学蒸着を行うための装置 |
Country Status (9)
Country | Link |
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US (1) | US9376753B2 (ja) |
EP (1) | EP2594660B1 (ja) |
JP (1) | JP6227240B2 (ja) |
CN (1) | CN103122455B (ja) |
BR (1) | BR102012029201A2 (ja) |
DK (1) | DK2594660T3 (ja) |
NL (1) | NL2007809C2 (ja) |
PL (1) | PL2594660T3 (ja) |
RU (1) | RU2625664C2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105244251B (zh) * | 2015-11-03 | 2017-11-17 | 长飞光纤光缆股份有限公司 | 一种大功率等离子体微波谐振腔 |
NL2017575B1 (en) | 2016-10-04 | 2018-04-13 | Draka Comteq Bv | A method and an apparatus for performing a plasma chemical vapour deposition process and a method |
CN106987827B (zh) * | 2017-04-14 | 2019-03-29 | 太原理工大学 | 等离子体化学气相沉积微波谐振腔及装置 |
CN110459853A (zh) * | 2019-08-21 | 2019-11-15 | 上海至纯洁净系统科技股份有限公司 | 一种适用于pcvd工艺的分体式易调谐微波谐振腔 |
NL2028245B1 (en) * | 2021-05-19 | 2022-12-05 | Draka Comteq Bv | A plasma chemical vapor deposition apparatus |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS62290054A (ja) * | 1986-06-09 | 1987-12-16 | Mitsubishi Electric Corp | マイクロ波によるガスのイオン化方法およびイオン源装置 |
JPH02107778A (ja) * | 1988-10-18 | 1990-04-19 | Canon Inc | 偏波制御マイクロ波プラズマ処理装置 |
JPH06140186A (ja) * | 1992-10-22 | 1994-05-20 | Mitsubishi Heavy Ind Ltd | プラズマ製造方法 |
JP2005539348A (ja) * | 2001-12-04 | 2005-12-22 | ドゥラカ ファイバー テクノロジー ベー ヴェー | プラズマキャビティ内に電磁マイクロ波放射を適用する装置 |
JP2007332460A (ja) * | 2006-06-16 | 2007-12-27 | Draka Comteq Bv | プラズマ化学蒸着(pcvd)プロセスを実行するための装置および光ファイバを製造するための方法 |
JP2008025029A (ja) * | 2006-07-17 | 2008-02-07 | Sidel Participations | 容器の内表面にコーティングを蒸着するための装置 |
Family Cites Families (14)
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US4125389A (en) | 1977-02-10 | 1978-11-14 | Northern Telecom Limited | Method for manufacturing an optical fibre with plasma activated deposition in a tube |
JPH03193880A (ja) * | 1989-08-03 | 1991-08-23 | Mikakutou Seimitsu Kogaku Kenkyusho:Kk | 高圧力下でのマイクロ波プラズマcvdによる高速成膜方法及びその装置 |
DE19600223A1 (de) * | 1996-01-05 | 1997-07-17 | Ralf Dr Dipl Phys Spitzl | Vorrichtung zur Erzeugung von Plasmen mittels Mikrowellen |
EP1060288B1 (en) * | 1997-12-31 | 2003-03-19 | Draka Fibre Technology B.V. | Pcvd apparatus and a method of manufacturing an optical fiber, a preform rod and a jacket tube as well as the optical fiber manufactured therewith |
US6715441B2 (en) | 1997-12-31 | 2004-04-06 | Plasma Optical Fibre B.V. | PCVD apparatus and a method of manufacturing an optical fiber, a preform rod and a jacket tube as well as the optical fiber manufactured therewith |
DE19847848C1 (de) * | 1998-10-16 | 2000-05-11 | R3 T Gmbh Rapid Reactive Radic | Vorrichtung und Erzeugung angeregter/ionisierter Teilchen in einem Plasma |
JP3625197B2 (ja) * | 2001-01-18 | 2005-03-02 | 東京エレクトロン株式会社 | プラズマ装置およびプラズマ生成方法 |
US6951798B2 (en) * | 2001-06-08 | 2005-10-04 | Wisconsin Alumni Research Foundation | Method of bonding a stack of layers by electromagnetic induction heating |
US20030152700A1 (en) * | 2002-02-11 | 2003-08-14 | Board Of Trustees Operating Michigan State University | Process for synthesizing uniform nanocrystalline films |
NL1025155C2 (nl) * | 2003-12-30 | 2005-07-04 | Draka Fibre Technology Bv | Inrichting voor het uitvoeren van PCVD, alsmede werkwijze voor het vervaardigen van een voorvorm. |
JP4852997B2 (ja) * | 2005-11-25 | 2012-01-11 | 東京エレクトロン株式会社 | マイクロ波導入装置及びプラズマ処理装置 |
KR100861412B1 (ko) | 2006-06-13 | 2008-10-07 | 조영상 | 다결정 실리콘 잉곳 제조장치 |
NL1033783C2 (nl) | 2007-05-01 | 2008-11-06 | Draka Comteq Bv | Inrichting voor het uitvoeren van een plasma chemische dampdepositie alsmede werkwijze ter vervaardiging van een optische voorvorm. |
US20120186747A1 (en) * | 2011-01-26 | 2012-07-26 | Obama Shinji | Plasma processing apparatus |
-
2011
- 2011-11-17 NL NL2007809A patent/NL2007809C2/en not_active IP Right Cessation
-
2012
- 2012-10-12 RU RU2012143706A patent/RU2625664C2/ru active
- 2012-11-09 US US13/672,706 patent/US9376753B2/en active Active
- 2012-11-14 PL PL12192493T patent/PL2594660T3/pl unknown
- 2012-11-14 DK DK12192493.0T patent/DK2594660T3/da active
- 2012-11-14 EP EP12192493.0A patent/EP2594660B1/en active Active
- 2012-11-14 BR BR102012029201-7A patent/BR102012029201A2/pt not_active Application Discontinuation
- 2012-11-16 CN CN201210480714.8A patent/CN103122455B/zh active Active
- 2012-11-19 JP JP2012253248A patent/JP6227240B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62290054A (ja) * | 1986-06-09 | 1987-12-16 | Mitsubishi Electric Corp | マイクロ波によるガスのイオン化方法およびイオン源装置 |
JPH02107778A (ja) * | 1988-10-18 | 1990-04-19 | Canon Inc | 偏波制御マイクロ波プラズマ処理装置 |
JPH06140186A (ja) * | 1992-10-22 | 1994-05-20 | Mitsubishi Heavy Ind Ltd | プラズマ製造方法 |
JP2005539348A (ja) * | 2001-12-04 | 2005-12-22 | ドゥラカ ファイバー テクノロジー ベー ヴェー | プラズマキャビティ内に電磁マイクロ波放射を適用する装置 |
JP2007332460A (ja) * | 2006-06-16 | 2007-12-27 | Draka Comteq Bv | プラズマ化学蒸着(pcvd)プロセスを実行するための装置および光ファイバを製造するための方法 |
JP2008025029A (ja) * | 2006-07-17 | 2008-02-07 | Sidel Participations | 容器の内表面にコーティングを蒸着するための装置 |
Also Published As
Publication number | Publication date |
---|---|
PL2594660T3 (pl) | 2020-11-16 |
RU2625664C2 (ru) | 2017-07-18 |
JP6227240B2 (ja) | 2017-11-08 |
BR102012029201A2 (pt) | 2018-02-27 |
EP2594660A1 (en) | 2013-05-22 |
CN103122455A (zh) | 2013-05-29 |
US20130125817A1 (en) | 2013-05-23 |
RU2012143706A (ru) | 2014-04-20 |
EP2594660B1 (en) | 2020-06-17 |
DK2594660T3 (da) | 2020-09-07 |
NL2007809C2 (en) | 2013-05-21 |
US9376753B2 (en) | 2016-06-28 |
CN103122455B (zh) | 2017-05-24 |
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