CN103092239B - 恒流电路及基准电压电路 - Google Patents
恒流电路及基准电压电路 Download PDFInfo
- Publication number
- CN103092239B CN103092239B CN201210425405.0A CN201210425405A CN103092239B CN 103092239 B CN103092239 B CN 103092239B CN 201210425405 A CN201210425405 A CN 201210425405A CN 103092239 B CN103092239 B CN 103092239B
- Authority
- CN
- China
- Prior art keywords
- circuit
- enhancement mode
- channel transistor
- current
- constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001629 suppression Effects 0.000 abstract description 6
- 230000000630 rising effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004941 influx Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005945 translocation Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-239421 | 2011-10-31 | ||
JP2011239421A JP2013097551A (ja) | 2011-10-31 | 2011-10-31 | 定電流回路及び基準電圧回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103092239A CN103092239A (zh) | 2013-05-08 |
CN103092239B true CN103092239B (zh) | 2016-10-19 |
Family
ID=48171735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210425405.0A Expired - Fee Related CN103092239B (zh) | 2011-10-31 | 2012-10-30 | 恒流电路及基准电压电路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9000749B2 (zh) |
JP (1) | JP2013097551A (zh) |
KR (1) | KR20130047658A (zh) |
CN (1) | CN103092239B (zh) |
TW (1) | TWI573007B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013097551A (ja) * | 2011-10-31 | 2013-05-20 | Seiko Instruments Inc | 定電流回路及び基準電圧回路 |
WO2015056041A1 (en) * | 2013-10-18 | 2015-04-23 | Freescale Semiconductor, Inc. | Voltage supply circuit with an auxiliary voltage supply unit and method for starting up electronic circuitry |
US11269368B2 (en) * | 2014-02-18 | 2022-03-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Flipped gate voltage reference and method of using |
US10241535B2 (en) | 2014-02-18 | 2019-03-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Flipped gate voltage reference having boxing region and method of using |
US9590504B2 (en) * | 2014-09-30 | 2017-03-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Flipped gate current reference and method of using |
JP2016162216A (ja) * | 2015-03-02 | 2016-09-05 | エスアイアイ・セミコンダクタ株式会社 | 基準電圧回路 |
CN105404351B (zh) * | 2015-12-14 | 2017-09-22 | 上海华虹宏力半导体制造有限公司 | 电流偏置电路 |
US9792979B1 (en) * | 2016-11-30 | 2017-10-17 | Apple Inc. | Process, voltage, and temperature tracking SRAM retention voltage regulator |
CN106909193A (zh) * | 2017-03-16 | 2017-06-30 | 上海华虹宏力半导体制造有限公司 | 参考电压源电路 |
JP6805049B2 (ja) * | 2017-03-31 | 2020-12-23 | エイブリック株式会社 | 基準電圧発生装置 |
US10345846B1 (en) * | 2018-02-22 | 2019-07-09 | Apple Inc. | Reference voltage circuit with flipped-gate transistor |
JP6998850B2 (ja) * | 2018-09-21 | 2022-01-18 | エイブリック株式会社 | 定電流回路 |
CN109274268B (zh) * | 2018-11-06 | 2023-12-22 | 拓尔微电子股份有限公司 | 一种应用于芯片内部的高压转低压电路 |
US10848153B2 (en) | 2018-11-30 | 2020-11-24 | Micron Technology, Inc. | Leakage current reduction in electronic devices |
CN111813173B (zh) * | 2020-07-14 | 2022-08-16 | 广芯微电子(广州)股份有限公司 | 一种偏置电路 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04111008A (ja) * | 1990-08-30 | 1992-04-13 | Oki Electric Ind Co Ltd | 定電流源回路 |
JP2001255950A (ja) * | 2000-03-09 | 2001-09-21 | Asahi Kasei Microsystems Kk | バイアス回路 |
CN1401099A (zh) * | 2000-02-15 | 2003-03-05 | 因芬尼昂技术股份公司 | 电压-电流转换器 |
JP2004013584A (ja) * | 2002-06-07 | 2004-01-15 | Nec Electronics Corp | リファレンス電圧回路 |
JP2004364118A (ja) * | 2003-06-06 | 2004-12-24 | Toko Inc | 出力可変型定電流源回路 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5995621A (ja) * | 1982-11-22 | 1984-06-01 | Toshiba Corp | 基準電圧回路 |
JP2803291B2 (ja) | 1990-02-15 | 1998-09-24 | 日本電気株式会社 | バイアス回路 |
JPH06104672A (ja) * | 1992-09-22 | 1994-04-15 | Mitsubishi Electric Corp | クランプ回路 |
JP2799535B2 (ja) * | 1992-10-16 | 1998-09-17 | 三菱電機株式会社 | 基準電流発生回路 |
JP3304539B2 (ja) * | 1993-08-31 | 2002-07-22 | 富士通株式会社 | 基準電圧発生回路 |
JP3686176B2 (ja) * | 1996-08-06 | 2005-08-24 | 株式会社ルネサステクノロジ | 定電流発生回路及び内部電源電圧発生回路 |
JP2001117654A (ja) * | 1999-10-21 | 2001-04-27 | Nec Kansai Ltd | 基準電圧発生回路 |
JP4402465B2 (ja) * | 2004-01-05 | 2010-01-20 | 株式会社リコー | 電源回路 |
TW200715092A (en) * | 2005-10-06 | 2007-04-16 | Denmos Technology Inc | Current bias circuit and current bias start-up circuit thereof |
JP4761361B2 (ja) * | 2005-11-16 | 2011-08-31 | 学校法人早稲田大学 | リファレンス回路 |
JP5242367B2 (ja) * | 2008-12-24 | 2013-07-24 | セイコーインスツル株式会社 | 基準電圧回路 |
JP2011048601A (ja) * | 2009-08-27 | 2011-03-10 | Renesas Electronics Corp | 基準電流電圧発生回路 |
JP2011150526A (ja) * | 2010-01-21 | 2011-08-04 | Renesas Electronics Corp | 基準電圧発生回路及びそれを用いた集積回路 |
EP2360547B1 (en) * | 2010-02-17 | 2013-04-10 | ams AG | Band gap reference circuit |
JP2013097551A (ja) * | 2011-10-31 | 2013-05-20 | Seiko Instruments Inc | 定電流回路及び基準電圧回路 |
-
2011
- 2011-10-31 JP JP2011239421A patent/JP2013097551A/ja active Pending
-
2012
- 2012-10-16 TW TW101138061A patent/TWI573007B/zh active
- 2012-10-25 US US13/660,408 patent/US9000749B2/en not_active Expired - Fee Related
- 2012-10-30 CN CN201210425405.0A patent/CN103092239B/zh not_active Expired - Fee Related
- 2012-10-30 KR KR1020120121034A patent/KR20130047658A/ko not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04111008A (ja) * | 1990-08-30 | 1992-04-13 | Oki Electric Ind Co Ltd | 定電流源回路 |
CN1401099A (zh) * | 2000-02-15 | 2003-03-05 | 因芬尼昂技术股份公司 | 电压-电流转换器 |
JP2001255950A (ja) * | 2000-03-09 | 2001-09-21 | Asahi Kasei Microsystems Kk | バイアス回路 |
JP2004013584A (ja) * | 2002-06-07 | 2004-01-15 | Nec Electronics Corp | リファレンス電圧回路 |
JP2004364118A (ja) * | 2003-06-06 | 2004-12-24 | Toko Inc | 出力可変型定電流源回路 |
Also Published As
Publication number | Publication date |
---|---|
US20130106394A1 (en) | 2013-05-02 |
KR20130047658A (ko) | 2013-05-08 |
JP2013097551A (ja) | 2013-05-20 |
CN103092239A (zh) | 2013-05-08 |
TWI573007B (zh) | 2017-03-01 |
TW201337501A (zh) | 2013-09-16 |
US9000749B2 (en) | 2015-04-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160331 Address after: Chiba County, Japan Applicant after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba County, Japan Applicant before: Seiko Instruments Inc. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161019 |
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CF01 | Termination of patent right due to non-payment of annual fee |