CN102402237B - 恒流电路 - Google Patents
恒流电路 Download PDFInfo
- Publication number
- CN102402237B CN102402237B CN201110284063.0A CN201110284063A CN102402237B CN 102402237 B CN102402237 B CN 102402237B CN 201110284063 A CN201110284063 A CN 201110284063A CN 102402237 B CN102402237 B CN 102402237B
- Authority
- CN
- China
- Prior art keywords
- conductivity type
- type mos
- transistor
- current
- mos transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920006395 saturated elastomer Polymers 0.000 description 5
- 102220101353 rs61735044 Human genes 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Control Of Electrical Variables (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010205700A JP5706653B2 (ja) | 2010-09-14 | 2010-09-14 | 定電流回路 |
JP2010-205700 | 2010-09-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102402237A CN102402237A (zh) | 2012-04-04 |
CN102402237B true CN102402237B (zh) | 2015-09-02 |
Family
ID=45806092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110284063.0A Expired - Fee Related CN102402237B (zh) | 2010-09-14 | 2011-09-14 | 恒流电路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8542060B2 (zh) |
JP (1) | JP5706653B2 (zh) |
KR (1) | KR101797769B1 (zh) |
CN (1) | CN102402237B (zh) |
TW (1) | TWI512424B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI646658B (zh) * | 2014-05-30 | 2019-01-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
JP2020035307A (ja) * | 2018-08-31 | 2020-03-05 | エイブリック株式会社 | 定電流回路 |
JP6887457B2 (ja) * | 2019-03-01 | 2021-06-16 | 力晶積成電子製造股▲ふん▼有限公司Powerchip Semiconductor Manufacturing Corporation | 基準電圧発生回路及び不揮発性半導体記憶装置 |
JP2020177393A (ja) * | 2019-04-17 | 2020-10-29 | エイブリック株式会社 | 定電流回路及び半導体装置 |
CN110320959B (zh) * | 2019-08-21 | 2020-11-06 | 上海南芯半导体科技有限公司 | 一种用于产生cmos阈值电压vth的电路与方法 |
US20230155498A1 (en) * | 2021-11-16 | 2023-05-18 | Rohm Co., Ltd. | Current source circuit |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2829248A1 (fr) * | 2001-09-03 | 2003-03-07 | St Microelectronics Sa | Generateur de courant pour faible tension d'alimentation |
CN101047336A (zh) * | 2006-03-27 | 2007-10-03 | 精工电子有限公司 | 共射共基电路和半导体装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2799535B2 (ja) * | 1992-10-16 | 1998-09-17 | 三菱電機株式会社 | 基準電流発生回路 |
US5889431A (en) * | 1997-06-26 | 1999-03-30 | The Aerospace Corporation | Current mode transistor circuit method |
JP3500322B2 (ja) * | 1999-04-09 | 2004-02-23 | シャープ株式会社 | 定電流駆動装置および定電流駆動半導体集積回路 |
DE19940382A1 (de) * | 1999-08-25 | 2001-03-08 | Infineon Technologies Ag | Stromquelle für niedrige Betriebsspannungen mit hohem Ausgangswiderstand |
JP2003273654A (ja) * | 2002-03-15 | 2003-09-26 | Seiko Epson Corp | 温度特性補償装置 |
AU2003273348A1 (en) * | 2002-09-19 | 2004-04-08 | Atmel Corporation | Fast dynamic low-voltage current mirror with compensated error |
US7356106B2 (en) * | 2004-09-07 | 2008-04-08 | Agency For Science, Technology And Research | Clock and data recovery circuit |
DE102005040072B9 (de) * | 2005-08-24 | 2012-02-09 | Infineon Technologies Ag | Vorrichtung zum verpolungssicheren Versorgen einer elektronischen Komponente mit einer Zwischenspannung aus einer Versorgungsspannung |
JP5202980B2 (ja) * | 2008-02-13 | 2013-06-05 | セイコーインスツル株式会社 | 定電流回路 |
US8159206B2 (en) * | 2008-06-10 | 2012-04-17 | Analog Devices, Inc. | Voltage reference circuit based on 3-transistor bandgap cell |
US8269478B2 (en) * | 2008-06-10 | 2012-09-18 | Analog Devices, Inc. | Two-terminal voltage regulator with current-balancing current mirror |
JP5242367B2 (ja) * | 2008-12-24 | 2013-07-24 | セイコーインスツル株式会社 | 基準電圧回路 |
JP5237853B2 (ja) * | 2009-02-23 | 2013-07-17 | セイコーインスツル株式会社 | 定電流回路 |
US7999529B2 (en) * | 2009-02-27 | 2011-08-16 | Sandisk 3D Llc | Methods and apparatus for generating voltage references using transistor threshold differences |
JP5533345B2 (ja) * | 2009-12-25 | 2014-06-25 | ミツミ電機株式会社 | 電流源回路及びそれを用いた遅延回路及び発振回路 |
JP2012209762A (ja) * | 2011-03-30 | 2012-10-25 | Hitachi Ltd | レベル生成回路 |
-
2010
- 2010-09-14 JP JP2010205700A patent/JP5706653B2/ja not_active Expired - Fee Related
-
2011
- 2011-08-16 US US13/210,598 patent/US8542060B2/en active Active
- 2011-08-17 TW TW100129376A patent/TWI512424B/zh not_active IP Right Cessation
- 2011-09-05 KR KR1020110089697A patent/KR101797769B1/ko active IP Right Grant
- 2011-09-14 CN CN201110284063.0A patent/CN102402237B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2829248A1 (fr) * | 2001-09-03 | 2003-03-07 | St Microelectronics Sa | Generateur de courant pour faible tension d'alimentation |
CN101047336A (zh) * | 2006-03-27 | 2007-10-03 | 精工电子有限公司 | 共射共基电路和半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
US20120062312A1 (en) | 2012-03-15 |
TWI512424B (zh) | 2015-12-11 |
KR101797769B1 (ko) | 2017-11-14 |
TW201224698A (en) | 2012-06-16 |
US8542060B2 (en) | 2013-09-24 |
JP5706653B2 (ja) | 2015-04-22 |
CN102402237A (zh) | 2012-04-04 |
KR20120028233A (ko) | 2012-03-22 |
JP2012063848A (ja) | 2012-03-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160310 Address after: Chiba County, Japan Patentee after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba, Chiba, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150902 |
|
CF01 | Termination of patent right due to non-payment of annual fee |