CN103050480A - 硅片的背面图形化的工艺方法 - Google Patents
硅片的背面图形化的工艺方法 Download PDFInfo
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- CN103050480A CN103050480A CN2012102892926A CN201210289292A CN103050480A CN 103050480 A CN103050480 A CN 103050480A CN 2012102892926 A CN2012102892926 A CN 2012102892926A CN 201210289292 A CN201210289292 A CN 201210289292A CN 103050480 A CN103050480 A CN 103050480A
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- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
Claims (12)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210289292.6A CN103050480B (zh) | 2012-08-14 | 2012-08-14 | 硅片的背面图形化的工艺方法 |
US13/966,847 US8895404B2 (en) | 2012-08-14 | 2013-08-14 | Method of back-side patterning |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210289292.6A CN103050480B (zh) | 2012-08-14 | 2012-08-14 | 硅片的背面图形化的工艺方法 |
Publications (2)
Publication Number | Publication Date |
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CN103050480A true CN103050480A (zh) | 2013-04-17 |
CN103050480B CN103050480B (zh) | 2015-08-19 |
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Application Number | Title | Priority Date | Filing Date |
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CN201210289292.6A Active CN103050480B (zh) | 2012-08-14 | 2012-08-14 | 硅片的背面图形化的工艺方法 |
Country Status (2)
Country | Link |
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US (1) | US8895404B2 (zh) |
CN (1) | CN103050480B (zh) |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103295893A (zh) * | 2013-05-29 | 2013-09-11 | 华进半导体封装先导技术研发中心有限公司 | 一种晶圆级微组装工艺 |
CN103531510A (zh) * | 2013-10-24 | 2014-01-22 | 华东光电集成器件研究所 | 一种半导体电路p+外延图形的转移对准光刻方法 |
CN104576310A (zh) * | 2013-10-16 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | 应用于半导体背面对准和导通的制作方法 |
CN104576482A (zh) * | 2013-10-17 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | 晶片与晶片之间的对准方法 |
CN104655006A (zh) * | 2013-11-19 | 2015-05-27 | 中芯国际集成电路制造(上海)有限公司 | 晶圆正面的器件图形与背面的背孔对准的检测方法 |
CN104916535A (zh) * | 2014-03-13 | 2015-09-16 | 中芯国际集成电路制造(上海)有限公司 | 一种激光诱导热生长氧化硅的方法 |
CN104934331A (zh) * | 2014-03-18 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | 一种保护晶圆接合焊盘的方法 |
CN104934295A (zh) * | 2014-03-18 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | 一种晶圆正面的保护方法 |
CN105502284A (zh) * | 2015-12-10 | 2016-04-20 | 上海集成电路研发中心有限公司 | 一种晶圆背面对准的工艺集成方法 |
CN105990123A (zh) * | 2015-02-27 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | 晶圆减薄方法 |
CN106206395A (zh) * | 2016-08-01 | 2016-12-07 | 上海华虹宏力半导体制造有限公司 | 改善igbt背面应力的方法 |
CN106653578A (zh) * | 2016-12-05 | 2017-05-10 | 歌尔股份有限公司 | 一种晶圆的加工方法 |
CN106800273A (zh) * | 2015-11-26 | 2017-06-06 | 上海新微技术研发中心有限公司 | 一种在基片背面形成标记的方法 |
CN107452716A (zh) * | 2016-05-25 | 2017-12-08 | 英飞凌科技股份有限公司 | 用于形成半导体器件的方法以及半导体器件 |
CN107546104A (zh) * | 2016-06-28 | 2018-01-05 | 昇阳国际半导体股份有限公司 | 一种晶圆薄化制备工艺 |
CN107777658A (zh) * | 2016-08-27 | 2018-03-09 | 深圳市诺维创科技有限公司 | 一种背面深反应离子蚀刻的方法 |
CN108022836A (zh) * | 2016-10-31 | 2018-05-11 | 中芯国际集成电路制造(上海)有限公司 | 一种多层堆叠晶圆的研磨方法 |
CN109712926A (zh) * | 2017-10-25 | 2019-05-03 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN110767593A (zh) * | 2019-10-14 | 2020-02-07 | 芯盟科技有限公司 | 一种半导体结构及其形成方法 |
CN110854053A (zh) * | 2019-11-19 | 2020-02-28 | 上海华力微电子有限公司 | 键合标记的制备方法、晶圆键合方法、键合标记及半导体器件 |
CN111446164A (zh) * | 2020-03-31 | 2020-07-24 | 绍兴同芯成集成电路有限公司 | 一种边缘缓坡状/阶梯状晶圆的制造方法 |
CN113161293A (zh) * | 2020-12-30 | 2021-07-23 | 上海朕芯微电子科技有限公司 | 新型功率器件及其划片方法、芯片级封装方法和封装结构 |
CN113410175A (zh) * | 2021-06-15 | 2021-09-17 | 西安微电子技术研究所 | 一种tsv导电通孔结构制备方法 |
Families Citing this family (5)
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US10605859B2 (en) | 2016-09-14 | 2020-03-31 | Qualcomm Incorporated | Visible alignment markers/landmarks for CAD-to-silicon backside image alignment |
CN112018082B (zh) * | 2019-05-31 | 2022-06-24 | 芯恩(青岛)集成电路有限公司 | 套刻对准标记的制备方法及其结构 |
CN111446165A (zh) * | 2020-04-16 | 2020-07-24 | 绍兴同芯成集成电路有限公司 | 一种晶圆热处理工艺以及晶圆双面电镀工艺 |
US11694968B2 (en) | 2020-11-13 | 2023-07-04 | Samsung Electronics Co., Ltd | Three dimensional integrated semiconductor architecture having alignment marks provided in a carrier substrate |
CN112786448B (zh) * | 2021-03-15 | 2022-05-31 | 绍兴同芯成集成电路有限公司 | 一种igbt晶圆的加工工艺 |
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US6861186B1 (en) * | 2003-09-25 | 2005-03-01 | International Business Machines Corporation | Method for backside alignment of photo-processes using standard front side alignment tools |
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CN101785085A (zh) * | 2007-06-05 | 2010-07-21 | 旭明光电股份有限公司 | 半导体晶圆组件的处理方法 |
CN101452912A (zh) * | 2007-12-06 | 2009-06-10 | 台湾积体电路制造股份有限公司 | 在背面表面形成对准标记的装置与方法 |
US7859033B2 (en) * | 2008-07-09 | 2010-12-28 | Eastman Kodak Company | Wafer level processing for backside illuminated sensors |
US20100109060A1 (en) * | 2008-11-06 | 2010-05-06 | Omnivision Technologies Inc. | Image sensor with backside photodiode implant |
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Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103295893A (zh) * | 2013-05-29 | 2013-09-11 | 华进半导体封装先导技术研发中心有限公司 | 一种晶圆级微组装工艺 |
CN104576310A (zh) * | 2013-10-16 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | 应用于半导体背面对准和导通的制作方法 |
CN104576310B (zh) * | 2013-10-16 | 2017-08-08 | 上海华虹宏力半导体制造有限公司 | 应用于半导体背面对准和导通的制作方法 |
CN104576482A (zh) * | 2013-10-17 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | 晶片与晶片之间的对准方法 |
CN103531510A (zh) * | 2013-10-24 | 2014-01-22 | 华东光电集成器件研究所 | 一种半导体电路p+外延图形的转移对准光刻方法 |
CN104655006B (zh) * | 2013-11-19 | 2017-09-22 | 中芯国际集成电路制造(上海)有限公司 | 晶圆正面的器件图形与背面的背孔对准的检测方法 |
CN104655006A (zh) * | 2013-11-19 | 2015-05-27 | 中芯国际集成电路制造(上海)有限公司 | 晶圆正面的器件图形与背面的背孔对准的检测方法 |
CN104916535A (zh) * | 2014-03-13 | 2015-09-16 | 中芯国际集成电路制造(上海)有限公司 | 一种激光诱导热生长氧化硅的方法 |
CN104916535B (zh) * | 2014-03-13 | 2018-02-06 | 中芯国际集成电路制造(上海)有限公司 | 一种激光诱导热生长氧化硅的方法 |
CN104934331A (zh) * | 2014-03-18 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | 一种保护晶圆接合焊盘的方法 |
CN104934295A (zh) * | 2014-03-18 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | 一种晶圆正面的保护方法 |
CN105990123A (zh) * | 2015-02-27 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | 晶圆减薄方法 |
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