CN103035649B - 半导体存储装置以及半导体存储元件 - Google Patents
半导体存储装置以及半导体存储元件 Download PDFInfo
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- CN103035649B CN103035649B CN201210367235.5A CN201210367235A CN103035649B CN 103035649 B CN103035649 B CN 103035649B CN 201210367235 A CN201210367235 A CN 201210367235A CN 103035649 B CN103035649 B CN 103035649B
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- semiconductor layer
- semiconductor
- memory component
- floating gate
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 238000003860 storage Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000000694 effects Effects 0.000 claims description 13
- 230000005611 electricity Effects 0.000 claims description 6
- 230000014759 maintenance of location Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
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- 239000000203 mixture Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 238000012544 monitoring process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011218241A JP2013077780A (ja) | 2011-09-30 | 2011-09-30 | 半導体記憶装置及び半導体記憶素子 |
JP2011-218241 | 2011-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103035649A CN103035649A (zh) | 2013-04-10 |
CN103035649B true CN103035649B (zh) | 2016-12-21 |
Family
ID=47991757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210367235.5A Expired - Fee Related CN103035649B (zh) | 2011-09-30 | 2012-09-28 | 半导体存储装置以及半导体存储元件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8823073B2 (zh) |
JP (1) | JP2013077780A (zh) |
KR (1) | KR101942580B1 (zh) |
CN (1) | CN103035649B (zh) |
TW (1) | TWI555094B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6286292B2 (ja) * | 2014-06-20 | 2018-02-28 | 株式会社フローディア | 不揮発性半導体記憶装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6304484B1 (en) * | 1999-12-27 | 2001-10-16 | Hyundai Electronics Industries Co., Ltd. | Multi-bit flash memory cell and programming method using the same |
CN1389927A (zh) * | 2001-05-31 | 2003-01-08 | 株式会社半导体能源研究所 | 半导体器件及电子装置 |
CN101826527A (zh) * | 2008-12-22 | 2010-09-08 | 东部高科股份有限公司 | 半导体器件、制造半导体器件的方法和闪存器件 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1392599A (en) * | 1971-07-28 | 1975-04-30 | Mullard Ltd | Semiconductor memory elements |
JPH05136429A (ja) * | 1991-11-08 | 1993-06-01 | Oki Electric Ind Co Ltd | 半導体記憶装置およびその動作方法 |
US6965142B2 (en) | 1995-03-07 | 2005-11-15 | Impinj, Inc. | Floating-gate semiconductor structures |
JP3691285B2 (ja) * | 1999-04-30 | 2005-09-07 | 旭化成マイクロシステム株式会社 | 不揮発性半導体記憶装置 |
JP3594550B2 (ja) * | 2000-11-27 | 2004-12-02 | シャープ株式会社 | 半導体装置の製造方法 |
US6806117B2 (en) * | 2002-12-09 | 2004-10-19 | Progressant Technologies, Inc. | Methods of testing/stressing a charge trapping device |
DE10352785A1 (de) * | 2003-11-12 | 2005-06-02 | Infineon Technologies Ag | Speichertransistor und Speichereinheit mit asymmetrischem Kanaldotierbereich |
JP4800017B2 (ja) * | 2005-11-25 | 2011-10-26 | エルピーダメモリ株式会社 | 半導体記憶装置 |
US20070246778A1 (en) * | 2006-04-21 | 2007-10-25 | Meng-Chi Liou | Electrostatic discharge panel protection structure |
US8004032B1 (en) * | 2006-05-19 | 2011-08-23 | National Semiconductor Corporation | System and method for providing low voltage high density multi-bit storage flash memory |
JP5476665B2 (ja) * | 2007-04-02 | 2014-04-23 | 株式会社デンソー | 不揮発性半導体記憶装置及びそのデータ書き換え方法 |
US7645662B2 (en) * | 2007-05-03 | 2010-01-12 | Dsm Solutions, Inc. | Transistor providing different threshold voltages and method of fabrication thereof |
US7733700B2 (en) * | 2007-07-18 | 2010-06-08 | Flashsilicon, Inc. | Method and structures for highly efficient hot carrier injection programming for non-volatile memories |
US20090101940A1 (en) * | 2007-10-19 | 2009-04-23 | Barrows Corey K | Dual gate fet structures for flexible gate array design methodologies |
JP2009129981A (ja) * | 2007-11-20 | 2009-06-11 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8218369B2 (en) * | 2010-01-25 | 2012-07-10 | Yield Microelectronics Corp. | Non-volatile memory low voltage and high speed erasure method |
-
2011
- 2011-09-30 JP JP2011218241A patent/JP2013077780A/ja active Pending
-
2012
- 2012-09-24 TW TW101134941A patent/TWI555094B/zh not_active IP Right Cessation
- 2012-09-27 US US13/628,135 patent/US8823073B2/en not_active Expired - Fee Related
- 2012-09-27 KR KR1020120107856A patent/KR101942580B1/ko active IP Right Grant
- 2012-09-28 CN CN201210367235.5A patent/CN103035649B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6304484B1 (en) * | 1999-12-27 | 2001-10-16 | Hyundai Electronics Industries Co., Ltd. | Multi-bit flash memory cell and programming method using the same |
CN1389927A (zh) * | 2001-05-31 | 2003-01-08 | 株式会社半导体能源研究所 | 半导体器件及电子装置 |
CN101826527A (zh) * | 2008-12-22 | 2010-09-08 | 东部高科股份有限公司 | 半导体器件、制造半导体器件的方法和闪存器件 |
Also Published As
Publication number | Publication date |
---|---|
JP2013077780A (ja) | 2013-04-25 |
US8823073B2 (en) | 2014-09-02 |
KR101942580B1 (ko) | 2019-01-25 |
CN103035649A (zh) | 2013-04-10 |
US20130082317A1 (en) | 2013-04-04 |
KR20130035928A (ko) | 2013-04-09 |
TW201334085A (zh) | 2013-08-16 |
TWI555094B (zh) | 2016-10-21 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160304 Address after: Chiba County, Japan Applicant after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba, Chiba, Japan Applicant before: Seiko Instruments Inc. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161221 |