CN102959015B - 可固化的有机聚硅氧烷组合物及光学半导体器件 - Google Patents

可固化的有机聚硅氧烷组合物及光学半导体器件 Download PDF

Info

Publication number
CN102959015B
CN102959015B CN201180028772.0A CN201180028772A CN102959015B CN 102959015 B CN102959015 B CN 102959015B CN 201180028772 A CN201180028772 A CN 201180028772A CN 102959015 B CN102959015 B CN 102959015B
Authority
CN
China
Prior art keywords
sio
component
methyl
composition
ingredient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201180028772.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN102959015A (zh
Inventor
吉武诚
山川美惠子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Toray Specialty Materials KK
Original Assignee
Dow Corning Toray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Toray Co Ltd filed Critical Dow Corning Toray Co Ltd
Publication of CN102959015A publication Critical patent/CN102959015A/zh
Application granted granted Critical
Publication of CN102959015B publication Critical patent/CN102959015B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)
CN201180028772.0A 2010-06-29 2011-06-28 可固化的有机聚硅氧烷组合物及光学半导体器件 Active CN102959015B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-147689 2010-06-29
JP2010147689A JP5680889B2 (ja) 2010-06-29 2010-06-29 硬化性オルガノポリシロキサン組成物および光半導体装置
PCT/JP2011/065248 WO2012002561A1 (en) 2010-06-29 2011-06-28 Curable organopolysiloxane composition and optical semiconductor device

Publications (2)

Publication Number Publication Date
CN102959015A CN102959015A (zh) 2013-03-06
CN102959015B true CN102959015B (zh) 2015-02-18

Family

ID=44475009

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180028772.0A Active CN102959015B (zh) 2010-06-29 2011-06-28 可固化的有机聚硅氧烷组合物及光学半导体器件

Country Status (7)

Country Link
US (1) US9012586B2 (enExample)
EP (1) EP2588539B1 (enExample)
JP (1) JP5680889B2 (enExample)
KR (1) KR101722123B1 (enExample)
CN (1) CN102959015B (enExample)
TW (1) TWI512047B (enExample)
WO (1) WO2012002561A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5534977B2 (ja) 2010-06-29 2014-07-02 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および光半導体装置
JP5693063B2 (ja) * 2010-07-01 2015-04-01 積水化学工業株式会社 光半導体装置用封止剤及びそれを用いた光半導体装置
JP5817377B2 (ja) * 2011-09-20 2015-11-18 住友ベークライト株式会社 シリコーンゴム系硬化性組成物、シリコーンゴムの製造方法、シリコーンゴム、成形体および医療用チューブ
JP6057503B2 (ja) * 2011-09-21 2017-01-11 東レ・ダウコーニング株式会社 光半導体素子封止用硬化性シリコーン組成物、樹脂封止光半導体素子の製造方法、および樹脂封止光半導体素子
JP5706357B2 (ja) * 2012-02-24 2015-04-22 富士フイルム株式会社 基板モジュールおよびその製造方法
JP5922463B2 (ja) * 2012-03-30 2016-05-24 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
KR102120623B1 (ko) * 2013-02-22 2020-06-11 듀폰 도레이 스페셜티 머티리얼즈 가부시키가이샤 경화성 실리콘 조성물, 이의 경화물, 및 광반도체 디바이스
JP6467125B2 (ja) * 2013-06-27 2019-02-06 株式会社カネカ 硬化性樹脂組成物、該組成物を硬化させてなる硬化物
WO2015034821A1 (en) * 2013-09-03 2015-03-12 Dow Corning Corporation Additive for a silicone encapsulant
WO2017028008A1 (zh) * 2015-08-14 2017-02-23 烟台德邦先进硅材料有限公司 一种高折射率高韧性的耐硫化led封装硅胶
WO2017068762A1 (en) * 2015-10-19 2017-04-27 Dow Corning Toray Co., Ltd. Active energy ray curable hot melt silicone composition, cured product thereof, and method of producing film
WO2017087351A1 (en) * 2015-11-18 2017-05-26 Dow Corning Corporation Curable silicone composition
WO2017085612A1 (en) * 2015-11-18 2017-05-26 Sabic Global Technologies B.V. An iccp grid anode system that mitigates the failure of positive feeder connections
US10461232B2 (en) 2016-01-15 2019-10-29 Citizen Watch Co., Ltd. Condensation reaction-type die bonding agent, LED light emitting device and method for manufacturing same
JP6573994B2 (ja) * 2016-01-28 2019-09-11 富士フイルム株式会社 音響波プローブ用組成物、これを用いた音響波プローブ用シリコーン樹脂、音響波プローブおよび超音波プローブ、ならびに、音響波測定装置、超音波診断装置、光音響波測定装置および超音波内視鏡
JP6626959B2 (ja) * 2016-03-25 2019-12-25 富士フイルム株式会社 音響波プローブ用組成物、これを用いた音響波プローブ用シリコーン樹脂、音響波プローブおよび超音波プローブ、ならびに、音響波測定装置、超音波診断装置、光音響波測定装置および超音波内視鏡
JP6519531B2 (ja) * 2016-06-03 2019-05-29 信越化学工業株式会社 付加硬化性シリコーン樹脂組成物及び光半導体装置用ダイアタッチ材
CN110072919A (zh) * 2016-12-13 2019-07-30 三菱化学株式会社 聚有机硅氧烷、聚有机硅氧烷组合物及其固化物、以及含有聚有机硅氧烷的电解电容器用电解液及使用其的电解电容器
US11518883B2 (en) 2016-12-30 2022-12-06 Elkem Silicones Shanghai Co., Ltd. Curable silicone compositions
CN110177841A (zh) * 2017-01-16 2019-08-27 株式会社大赛璐 固化性树脂组合物、其固化物及半导体装置
JP6884458B2 (ja) * 2017-02-27 2021-06-09 デュポン・東レ・スペシャルティ・マテリアル株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
TWI762649B (zh) 2017-06-26 2022-05-01 日商杜邦東麗特殊材料股份有限公司 黏晶用固化性矽組合物
RU2696897C1 (ru) 2018-12-18 2019-08-07 Открытое акционерное общество "Хлебпром" Чипсы цельнозерновые и способ их производства
TWI869483B (zh) 2019-12-11 2025-01-11 美商陶氏全球科技公司 快速矽氫化固化組合物
KR20230030637A (ko) 2020-06-30 2023-03-06 다우 도레이 캄파니 리미티드 경화성 실리콘 조성물 및 그의 경화물
JP2023132309A (ja) 2022-03-10 2023-09-22 デュポン・東レ・スペシャルティ・マテリアル株式会社 硬化性シリコーン組成物
CN120380086A (zh) * 2022-12-23 2025-07-25 陶氏东丽株式会社 热熔性固化性有机硅组合物、使用该组合物的层叠体以及半导体装置的制造方法
JP2024095181A (ja) 2022-12-28 2024-07-10 デュポン・東レ・スペシャルティ・マテリアル株式会社 硬化性シリコーン組成物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008114634A1 (ja) * 2007-03-19 2008-09-25 Sanyu Rec Co., Ltd. 発光素子封止用シリコーン樹脂組成物及びこれを用いたポッティング方式による光半導体電子部品の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696210A (en) * 1996-10-09 1997-12-09 Dow Corning Corporation Flowable adhesive
US6124407A (en) * 1998-10-28 2000-09-26 Dow Corning Corporation Silicone composition, method for the preparation thereof, and silicone elastomer
JP4648099B2 (ja) 2005-06-07 2011-03-09 信越化学工業株式会社 ダイボンディング用シリコーン樹脂組成物
JP2007063538A (ja) 2005-08-03 2007-03-15 Shin Etsu Chem Co Ltd 発光ダイオード用付加硬化型シリコーン樹脂組成物
JP4965111B2 (ja) * 2005-11-09 2012-07-04 東レ・ダウコーニング株式会社 硬化性シリコーン組成物
JP2008120843A (ja) 2006-11-08 2008-05-29 Momentive Performance Materials Japan Kk 光透過性シリコーンレジンと光透過性シリコーンレジン組成物および光半導体装置
TWI458780B (zh) * 2007-07-31 2014-11-01 Dow Corning Toray Co Ltd 提供高透明矽酮硬化物之硬化性矽酮組合物
JP5233645B2 (ja) 2008-12-17 2013-07-10 株式会社ニコン 撮像装置および画像処理プログラム
JP5534977B2 (ja) 2010-06-29 2014-07-02 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および光半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008114634A1 (ja) * 2007-03-19 2008-09-25 Sanyu Rec Co., Ltd. 発光素子封止用シリコーン樹脂組成物及びこれを用いたポッティング方式による光半導体電子部品の製造方法

Also Published As

Publication number Publication date
WO2012002561A1 (en) 2012-01-05
US20130161686A1 (en) 2013-06-27
TWI512047B (zh) 2015-12-11
CN102959015A (zh) 2013-03-06
EP2588539A1 (en) 2013-05-08
TW201209101A (en) 2012-03-01
US9012586B2 (en) 2015-04-21
JP5680889B2 (ja) 2015-03-04
KR101722123B1 (ko) 2017-03-31
EP2588539B1 (en) 2014-05-14
KR20130112713A (ko) 2013-10-14
JP2012012433A (ja) 2012-01-19

Similar Documents

Publication Publication Date Title
CN102959015B (zh) 可固化的有机聚硅氧烷组合物及光学半导体器件
CN103003364B (zh) 可固化的有机聚硅氧烷组合物及光学半导体器件
JP5769622B2 (ja) 硬化性オルガノポリシロキサン組成物、光半導体素子封止剤および光半導体装置
CN102131874B (zh) 可固化的有机基聚硅氧烷组合物，光学半导体元件密封剂，和光学半导体器件
KR20160013872A (ko) 반도체 장치 및 반도체 소자 밀봉용 경화성 실리콘 조성물
EP3662006B1 (en) Curable organopolysiloxane composition and optical semiconductor device
EP3587498B1 (en) Curable organopolysiloxane composition and semiconductor device
KR20230133239A (ko) 경화성 실리콘 조성물
TWI801654B (zh) 加成硬化型聚矽氧組成物及半導體裝置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant