CN102956654B - 光电转换装置的制造方法 - Google Patents

光电转换装置的制造方法 Download PDF

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Publication number
CN102956654B
CN102956654B CN201210278323.8A CN201210278323A CN102956654B CN 102956654 B CN102956654 B CN 102956654B CN 201210278323 A CN201210278323 A CN 201210278323A CN 102956654 B CN102956654 B CN 102956654B
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China
Prior art keywords
alignment
forming
metal
photoelectric conversion
isolation
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Expired - Fee Related
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CN201210278323.8A
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English (en)
Chinese (zh)
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CN102956654A (zh
Inventor
荒川三喜男
伊藤正孝
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
CN201210278323.8A 2011-08-12 2012-08-07 光电转换装置的制造方法 Expired - Fee Related CN102956654B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-177126 2011-08-12
JP2011177126A JP5950514B2 (ja) 2011-08-12 2011-08-12 光電変換装置の製造方法

Publications (2)

Publication Number Publication Date
CN102956654A CN102956654A (zh) 2013-03-06
CN102956654B true CN102956654B (zh) 2016-10-19

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CN201210278323.8A Expired - Fee Related CN102956654B (zh) 2011-08-12 2012-08-07 光电转换装置的制造方法

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US (1) US9054002B2 (enExample)
JP (1) JP5950514B2 (enExample)
CN (1) CN102956654B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6238558B2 (ja) * 2013-04-26 2017-11-29 キヤノン株式会社 撮像装置、および、撮像システム。
JP6119432B2 (ja) * 2013-05-31 2017-04-26 ソニー株式会社 固体撮像素子、電子機器、および製造方法
US20150062422A1 (en) * 2013-08-27 2015-03-05 Semiconductor Components Industries, Llc Lens alignment in camera modules using phase detection pixels
JP6305028B2 (ja) * 2013-11-22 2018-04-04 キヤノン株式会社 光電変換装置の製造方法および光電変換装置
JP2016001682A (ja) * 2014-06-12 2016-01-07 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP6362478B2 (ja) * 2014-08-27 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
KR102414038B1 (ko) * 2015-09-16 2022-06-30 에스케이하이닉스 주식회사 수직 전송 게이트를 갖는 이미지 센서 및 그 제조방법
US9484373B1 (en) 2015-11-18 2016-11-01 Omnivision Technologies, Inc. Hard mask as contact etch stop layer in image sensors
KR102462912B1 (ko) * 2015-12-04 2022-11-04 에스케이하이닉스 주식회사 수직 전송 게이트를 갖는 이미지 센서
WO2019167551A1 (ja) * 2018-02-28 2019-09-06 パナソニックＩｐマネジメント株式会社 撮像装置
CN210325802U (zh) * 2018-07-18 2020-04-14 索尼半导体解决方案公司 受光元件以及测距模块
KR102593949B1 (ko) * 2018-07-25 2023-10-27 삼성전자주식회사 이미지 센서
KR102523851B1 (ko) * 2018-07-31 2023-04-21 에스케이하이닉스 주식회사 더미 픽셀들을 포함하는 이미지 센싱 장치
KR102615669B1 (ko) * 2018-12-11 2023-12-20 에스케이하이닉스 주식회사 이미지 센싱 장치
WO2021090545A1 (ja) * 2019-11-08 2021-05-14 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3120778B2 (ja) * 1998-04-20 2000-12-25 日本電気株式会社 固体撮像装置およびその検査方法および製造方法
JP2001250931A (ja) * 2000-03-07 2001-09-14 Canon Inc 固体撮像装置およびこれを用いた撮像システム
JP4500434B2 (ja) 2000-11-28 2010-07-14 キヤノン株式会社 撮像装置及び撮像システム、並びに撮像方法
JP4221940B2 (ja) * 2002-03-13 2009-02-12 ソニー株式会社 固体撮像素子及び固体撮像装置並びに撮像システム
JP3722367B2 (ja) 2002-03-19 2005-11-30 ソニー株式会社 固体撮像素子の製造方法
KR100499174B1 (ko) * 2003-06-17 2005-07-01 삼성전자주식회사 이미지 소자
US7295375B2 (en) * 2005-08-02 2007-11-13 International Business Machines Corporation Injection molded microlenses for optical interconnects
KR100791336B1 (ko) * 2006-08-10 2008-01-07 삼성전자주식회사 이미지 센서 제조 방법
JP4598047B2 (ja) * 2007-11-27 2010-12-15 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
US7588993B2 (en) * 2007-12-06 2009-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Alignment for backside illumination sensor
US8183510B2 (en) * 2008-02-12 2012-05-22 Omnivision Technologies, Inc. Image sensor with buried self aligned focusing element
KR20090128899A (ko) * 2008-06-11 2009-12-16 크로스텍 캐피탈, 엘엘씨 후면 조사 이미지 센서 및 그 제조방법
JP5568969B2 (ja) * 2009-11-30 2014-08-13 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器

Also Published As

Publication number Publication date
JP5950514B2 (ja) 2016-07-13
JP2013041940A (ja) 2013-02-28
US9054002B2 (en) 2015-06-09
CN102956654A (zh) 2013-03-06
US20130040415A1 (en) 2013-02-14

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Granted publication date: 20161019