JP5950514B2 - 光電変換装置の製造方法 - Google Patents

光電変換装置の製造方法 Download PDF

Info

Publication number
JP5950514B2
JP5950514B2 JP2011177126A JP2011177126A JP5950514B2 JP 5950514 B2 JP5950514 B2 JP 5950514B2 JP 2011177126 A JP2011177126 A JP 2011177126A JP 2011177126 A JP2011177126 A JP 2011177126A JP 5950514 B2 JP5950514 B2 JP 5950514B2
Authority
JP
Japan
Prior art keywords
forming
alignment
photoelectric conversion
metal
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011177126A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013041940A (ja
JP2013041940A5 (enExample
Inventor
三喜男 荒川
三喜男 荒川
伊藤　正孝
正孝 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011177126A priority Critical patent/JP5950514B2/ja
Priority to CN201210278323.8A priority patent/CN102956654B/zh
Priority to US13/569,640 priority patent/US9054002B2/en
Publication of JP2013041940A publication Critical patent/JP2013041940A/ja
Publication of JP2013041940A5 publication Critical patent/JP2013041940A5/ja
Application granted granted Critical
Publication of JP5950514B2 publication Critical patent/JP5950514B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP2011177126A 2011-08-12 2011-08-12 光電変換装置の製造方法 Expired - Fee Related JP5950514B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011177126A JP5950514B2 (ja) 2011-08-12 2011-08-12 光電変換装置の製造方法
CN201210278323.8A CN102956654B (zh) 2011-08-12 2012-08-07 光电转换装置的制造方法
US13/569,640 US9054002B2 (en) 2011-08-12 2012-08-08 Method for manufacturing photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011177126A JP5950514B2 (ja) 2011-08-12 2011-08-12 光電変換装置の製造方法

Publications (3)

Publication Number Publication Date
JP2013041940A JP2013041940A (ja) 2013-02-28
JP2013041940A5 JP2013041940A5 (enExample) 2014-09-25
JP5950514B2 true JP5950514B2 (ja) 2016-07-13

Family

ID=47677778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011177126A Expired - Fee Related JP5950514B2 (ja) 2011-08-12 2011-08-12 光電変換装置の製造方法

Country Status (3)

Country Link
US (1) US9054002B2 (enExample)
JP (1) JP5950514B2 (enExample)
CN (1) CN102956654B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6238558B2 (ja) * 2013-04-26 2017-11-29 キヤノン株式会社 撮像装置、および、撮像システム。
JP6119432B2 (ja) * 2013-05-31 2017-04-26 ソニー株式会社 固体撮像素子、電子機器、および製造方法
US20150062422A1 (en) * 2013-08-27 2015-03-05 Semiconductor Components Industries, Llc Lens alignment in camera modules using phase detection pixels
JP6305028B2 (ja) * 2013-11-22 2018-04-04 キヤノン株式会社 光電変換装置の製造方法および光電変換装置
JP2016001682A (ja) * 2014-06-12 2016-01-07 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP6362478B2 (ja) * 2014-08-27 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
KR102414038B1 (ko) * 2015-09-16 2022-06-30 에스케이하이닉스 주식회사 수직 전송 게이트를 갖는 이미지 센서 및 그 제조방법
US9484373B1 (en) 2015-11-18 2016-11-01 Omnivision Technologies, Inc. Hard mask as contact etch stop layer in image sensors
KR102462912B1 (ko) * 2015-12-04 2022-11-04 에스케이하이닉스 주식회사 수직 전송 게이트를 갖는 이미지 센서
WO2019167551A1 (ja) * 2018-02-28 2019-09-06 パナソニックＩｐマネジメント株式会社 撮像装置
CN210325802U (zh) * 2018-07-18 2020-04-14 索尼半导体解决方案公司 受光元件以及测距模块
KR102593949B1 (ko) * 2018-07-25 2023-10-27 삼성전자주식회사 이미지 센서
KR102523851B1 (ko) * 2018-07-31 2023-04-21 에스케이하이닉스 주식회사 더미 픽셀들을 포함하는 이미지 센싱 장치
KR102615669B1 (ko) * 2018-12-11 2023-12-20 에스케이하이닉스 주식회사 이미지 센싱 장치
WO2021090545A1 (ja) * 2019-11-08 2021-05-14 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3120778B2 (ja) * 1998-04-20 2000-12-25 日本電気株式会社 固体撮像装置およびその検査方法および製造方法
JP2001250931A (ja) * 2000-03-07 2001-09-14 Canon Inc 固体撮像装置およびこれを用いた撮像システム
JP4500434B2 (ja) 2000-11-28 2010-07-14 キヤノン株式会社 撮像装置及び撮像システム、並びに撮像方法
JP4221940B2 (ja) * 2002-03-13 2009-02-12 ソニー株式会社 固体撮像素子及び固体撮像装置並びに撮像システム
JP3722367B2 (ja) 2002-03-19 2005-11-30 ソニー株式会社 固体撮像素子の製造方法
KR100499174B1 (ko) * 2003-06-17 2005-07-01 삼성전자주식회사 이미지 소자
US7295375B2 (en) * 2005-08-02 2007-11-13 International Business Machines Corporation Injection molded microlenses for optical interconnects
KR100791336B1 (ko) * 2006-08-10 2008-01-07 삼성전자주식회사 이미지 센서 제조 방법
JP4598047B2 (ja) * 2007-11-27 2010-12-15 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
US7588993B2 (en) * 2007-12-06 2009-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Alignment for backside illumination sensor
US8183510B2 (en) * 2008-02-12 2012-05-22 Omnivision Technologies, Inc. Image sensor with buried self aligned focusing element
KR20090128899A (ko) * 2008-06-11 2009-12-16 크로스텍 캐피탈, 엘엘씨 후면 조사 이미지 센서 및 그 제조방법
JP5568969B2 (ja) * 2009-11-30 2014-08-13 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器

Also Published As

Publication number Publication date
CN102956654B (zh) 2016-10-19
JP2013041940A (ja) 2013-02-28
US9054002B2 (en) 2015-06-09
CN102956654A (zh) 2013-03-06
US20130040415A1 (en) 2013-02-14

Similar Documents

Publication Publication Date Title
JP5950514B2 (ja) 光電変換装置の製造方法
US7648851B2 (en) Method of fabricating backside illuminated image sensor
TWI463645B (zh) 影像感測器中之彩色濾光片陣列對準標記形成
US8736006B1 (en) Backside structure for a BSI image sensor device
US7638852B2 (en) Method of making wafer structure for backside illuminated color image sensor
TWI636557B (zh) Solid-state imaging device, manufacturing method thereof, and electronic device
USRE46836E1 (en) Imaging device and method of manufacturing the same and electronic apparatus
KR20180016699A (ko) 이미지 센서
JP7554698B2 (ja) イメージセンサおよびその形成方法
JP6362478B2 (ja) 半導体装置の製造方法および半導体装置
US20170236854A1 (en) Backside illuminated (bsi) image sensor with a reflector
CN102931204B (zh) 影像检测器阵列的形成方法
KR101010375B1 (ko) 이미지센서 및 그 제조방법
US9312292B2 (en) Back side illumination image sensor and manufacturing method thereof
US8318579B1 (en) Method for fabricating semiconductor device
JP4905760B2 (ja) カラーフィルタの製造方法、カラーフィルタ、固体撮像素子の製造方法およびこれを用いた固体撮像素子
US7883923B2 (en) Method for manufacturing image sensor
US20240120357A1 (en) Image sensor
KR20110072517A (ko) 후면 수광 이미지센서 및 그 제조방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140808

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140808

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150716

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150804

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151005

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160510

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160607

R151 Written notification of patent or utility model registration

Ref document number: 5950514

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

LAPS Cancellation because of no payment of annual fees