CN102800678A - 场边次位线反或nor快闪阵列以及其制造工艺方法 - Google Patents
场边次位线反或nor快闪阵列以及其制造工艺方法 Download PDFInfo
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- CN102800678A CN102800678A CN2012101594120A CN201210159412A CN102800678A CN 102800678 A CN102800678 A CN 102800678A CN 2012101594120 A CN2012101594120 A CN 2012101594120A CN 201210159412 A CN201210159412 A CN 201210159412A CN 102800678 A CN102800678 A CN 102800678A
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (31)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/113,886 | 2011-05-23 | ||
US13/113,886 US8415721B2 (en) | 2011-05-23 | 2011-05-23 | Field side sub-bitline nor flash array and method of fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102800678A true CN102800678A (zh) | 2012-11-28 |
CN102800678B CN102800678B (zh) | 2014-12-10 |
Family
ID=47199739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210159412.0A Expired - Fee Related CN102800678B (zh) | 2011-05-23 | 2012-05-21 | 场边次位线反或nor快闪阵列以及其制造工艺方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8415721B2 (zh) |
KR (1) | KR101393133B1 (zh) |
CN (1) | CN102800678B (zh) |
TW (1) | TWI457936B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107359164A (zh) * | 2016-05-04 | 2017-11-17 | 旺宏电子股份有限公司 | 存储器结构及其制造方法 |
CN107945823A (zh) * | 2016-10-12 | 2018-04-20 | 中天鸿骏半导体(北京)有限公司 | 非易失性存储器装置、其程序化方法及其数据读取方法 |
CN111223511A (zh) * | 2019-12-30 | 2020-06-02 | 深圳市芯天下技术有限公司 | 一种存储器及其存储单元 |
CN113496896A (zh) * | 2020-04-08 | 2021-10-12 | 北方集成电路技术创新中心(北京)有限公司 | 半导体结构及其形成方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8254173B2 (en) | 2010-08-31 | 2012-08-28 | Micron Technology, Inc. | NAND memory constructions |
US8415721B2 (en) * | 2011-05-23 | 2013-04-09 | Flashsilicon Incorporation | Field side sub-bitline nor flash array and method of fabricating the same |
US9048137B2 (en) * | 2012-02-17 | 2015-06-02 | Flashsilicon Incorporation | Scalable gate logic non-volatile memory cells and arrays |
US8879323B2 (en) | 2012-11-21 | 2014-11-04 | Flashsilicon Incorporation | Interconnection matrix using semiconductor non-volatile memory |
TWI469272B (zh) * | 2012-12-20 | 2015-01-11 | Winbond Electronics Corp | Nand快閃記憶體之鑲嵌結構的製造方法 |
US8988104B2 (en) | 2013-02-27 | 2015-03-24 | Flashsilicon Incorporation | Multiple-time configurable non-volatile look-up-table |
US9570456B1 (en) | 2015-07-22 | 2017-02-14 | United Microelectronics Corp. | Semiconductor integrated device including capacitor and memory cell and method of forming the same |
US11120884B2 (en) | 2015-09-30 | 2021-09-14 | Sunrise Memory Corporation | Implementing logic function and generating analog signals using NOR memory strings |
US10692874B2 (en) * | 2017-06-20 | 2020-06-23 | Sunrise Memory Corporation | 3-dimensional NOR string arrays in segmented stacks |
WO2021159028A1 (en) | 2020-02-07 | 2021-08-12 | Sunrise Memory Corporation | High capacity memory circuit with low effective latency |
CN112201291B (zh) * | 2020-09-11 | 2021-08-17 | 中天弘宇集成电路有限责任公司 | Nor闪存电路及数据写入方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1401140A (zh) * | 2000-08-14 | 2003-03-05 | 矩阵半导体公司 | 密集阵列和电荷存储器件及其制造方法 |
CN101452937A (zh) * | 2007-11-30 | 2009-06-10 | 上海华虹Nec电子有限公司 | 一次可编程非挥发性存储器芯片单元及其制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3370563B2 (ja) | 1997-07-09 | 2003-01-27 | シャープ株式会社 | 不揮発性半導体記憶装置の駆動方法 |
US6072720A (en) * | 1998-12-04 | 2000-06-06 | Gatefield Corporation | Nonvolatile reprogrammable interconnect cell with programmable buried bitline |
JP3694422B2 (ja) | 1999-06-21 | 2005-09-14 | シャープ株式会社 | ロウデコーダ回路 |
US6275414B1 (en) * | 2000-05-16 | 2001-08-14 | Advanced Micro Devices, Inc. | Uniform bitline strapping of a non-volatile memory cell |
US6380576B1 (en) * | 2000-08-31 | 2002-04-30 | Micron Technology, Inc. | Selective polysilicon stud growth |
TW519715B (en) * | 2002-01-16 | 2003-02-01 | Macronix Int Co Ltd | Testing device and method of mask ROM |
US6853587B2 (en) * | 2002-06-21 | 2005-02-08 | Micron Technology, Inc. | Vertical NROM having a storage density of 1 bit per 1F2 |
US6894915B2 (en) * | 2002-11-15 | 2005-05-17 | Micron Technology, Inc. | Method to prevent bit line capacitive coupling |
JP2008205187A (ja) | 2007-02-20 | 2008-09-04 | Sharp Corp | 不揮発性半導体記憶装置および不揮発性半導体記憶装置の製造方法 |
US8415721B2 (en) * | 2011-05-23 | 2013-04-09 | Flashsilicon Incorporation | Field side sub-bitline nor flash array and method of fabricating the same |
-
2011
- 2011-05-23 US US13/113,886 patent/US8415721B2/en active Active
-
2012
- 2012-05-21 TW TW101117944A patent/TWI457936B/zh not_active IP Right Cessation
- 2012-05-21 CN CN201210159412.0A patent/CN102800678B/zh not_active Expired - Fee Related
- 2012-05-22 KR KR1020120054009A patent/KR101393133B1/ko active IP Right Grant
-
2013
- 2013-02-27 US US13/779,384 patent/US8716138B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1401140A (zh) * | 2000-08-14 | 2003-03-05 | 矩阵半导体公司 | 密集阵列和电荷存储器件及其制造方法 |
CN101179079A (zh) * | 2000-08-14 | 2008-05-14 | 矩阵半导体公司 | 密集阵列和电荷存储器件及其制造方法 |
CN101452937A (zh) * | 2007-11-30 | 2009-06-10 | 上海华虹Nec电子有限公司 | 一次可编程非挥发性存储器芯片单元及其制备方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107359164A (zh) * | 2016-05-04 | 2017-11-17 | 旺宏电子股份有限公司 | 存储器结构及其制造方法 |
CN107359164B (zh) * | 2016-05-04 | 2019-11-29 | 旺宏电子股份有限公司 | 存储器结构及其制造方法 |
CN107945823A (zh) * | 2016-10-12 | 2018-04-20 | 中天鸿骏半导体(北京)有限公司 | 非易失性存储器装置、其程序化方法及其数据读取方法 |
CN111223511A (zh) * | 2019-12-30 | 2020-06-02 | 深圳市芯天下技术有限公司 | 一种存储器及其存储单元 |
CN113496896A (zh) * | 2020-04-08 | 2021-10-12 | 北方集成电路技术创新中心(北京)有限公司 | 半导体结构及其形成方法 |
CN113496896B (zh) * | 2020-04-08 | 2024-04-16 | 北方集成电路技术创新中心(北京)有限公司 | 半导体结构及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US20130178026A1 (en) | 2013-07-11 |
CN102800678B (zh) | 2014-12-10 |
KR20120130721A (ko) | 2012-12-03 |
TW201248634A (en) | 2012-12-01 |
KR101393133B1 (ko) | 2014-05-08 |
US20120299079A1 (en) | 2012-11-29 |
US8716138B2 (en) | 2014-05-06 |
TWI457936B (zh) | 2014-10-21 |
US8415721B2 (en) | 2013-04-09 |
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Effective date of registration: 20151014 Address after: Beijing City, Chaoyang District Wangjing four district 100102 Building No. 7 East 22 2205-1 room Patentee after: Zhongtian Hongjun Semiconductor Co.,Ltd. Address before: California, USA Patentee before: FlashSilicon Inc. |
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Address after: Room 2205-1, 22 floors, Building 7, Wangjing Dongyuan District 4, Chaoyang District, Beijing 100102 Patentee after: PEGASUS SEMICONDUCTOR (BEIJING) CO.,LTD. Address before: Room 2205-1, 22 floors, Building 7, Wangjing Dongyuan District 4, Chaoyang District, Beijing 100102 Patentee before: Zhongtian Hongjun Semiconductor Co.,Ltd. |
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Address after: 201306 C, 888, west two road, Nanhui new town, Pudong New Area, Shanghai Patentee after: ZHONGTIAN HONGJUN SEMICONDUCTOR (SHANGHAI) Co.,Ltd. Address before: Room 2205-1, 22 floors, Building 7, Wangjing Dongyuan District 4, Chaoyang District, Beijing 100102 Patentee before: PEGASUS SEMICONDUCTOR (BEIJING) CO.,LTD. |
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Effective date of registration: 20191119 Address after: 201203 Room 201 and 202, 2 / F, No. 1 zhangrun building, Lane 61, shengxia Road, China (Shanghai) pilot Free Trade Zone Patentee after: Zhongtian Hongyu integrated circuit Co.,Ltd. Address before: The new town of Pudong New Area Nanhui lake west two road 201306 Shanghai City No. 888 building C Patentee before: ZHONGTIAN HONGJUN SEMICONDUCTOR (SHANGHAI) Co.,Ltd. |
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Effective date of registration: 20220620 Address after: 201306 building C, No. 888, Huanhu West 2nd Road, Lingang New District, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: ZHONGTIAN HONGJUN SEMICONDUCTOR (SHANGHAI) Co.,Ltd. Address before: Room 201 and 202, 2 / F, No.1 zhangrun building, Lane 61, shengxia Road, China (Shanghai) pilot Free Trade Zone, 201203 Patentee before: Zhongtian Hongyu integrated circuit Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141210 |