CN102792470B - 氮化合物半导体发光元件及其制造方法 - Google Patents

氮化合物半导体发光元件及其制造方法 Download PDF

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Publication number
CN102792470B
CN102792470B CN201180013599.7A CN201180013599A CN102792470B CN 102792470 B CN102792470 B CN 102792470B CN 201180013599 A CN201180013599 A CN 201180013599A CN 102792470 B CN102792470 B CN 102792470B
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China
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layer
type
compound semiconductor
nitrogen compound
light
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Expired - Fee Related
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CN201180013599.7A
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English (en)
Chinese (zh)
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CN102792470A (zh
Inventor
月原政志
川崎宏治
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Ushio Denki KK
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Ushio Denki KK
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

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  • Led Devices (AREA)
CN201180013599.7A 2010-04-09 2011-03-17 氮化合物半导体发光元件及其制造方法 Expired - Fee Related CN102792470B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-090003 2010-04-09
JP2010090003A JP5549338B2 (ja) 2010-04-09 2010-04-09 紫外光放射用窒素化合物半導体ｌｅｄおよびその製造方法
PCT/JP2011/056388 WO2011125449A1 (ja) 2010-04-09 2011-03-17 窒素化合物半導体発光素子およびその製造方法

Publications (2)

Publication Number Publication Date
CN102792470A CN102792470A (zh) 2012-11-21
CN102792470B true CN102792470B (zh) 2015-07-29

Family

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CN201180013599.7A Expired - Fee Related CN102792470B (zh) 2010-04-09 2011-03-17 氮化合物半导体发光元件及其制造方法

Country Status (6)

Country Link
US (1) US20130037820A1 (enExample)
EP (1) EP2568512A4 (enExample)
JP (1) JP5549338B2 (enExample)
KR (1) KR101399250B1 (enExample)
CN (1) CN102792470B (enExample)
WO (1) WO2011125449A1 (enExample)

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JP5315513B2 (ja) 2011-07-12 2013-10-16 丸文株式会社 発光素子及びその製造方法
WO2013134432A1 (en) * 2012-03-06 2013-09-12 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
WO2015008776A1 (ja) 2013-07-17 2015-01-22 丸文株式会社 半導体発光素子及び製造方法
JP5861947B2 (ja) * 2014-02-05 2016-02-16 ウシオ電機株式会社 半導体発光素子及びその製造方法
KR101648079B1 (ko) * 2014-03-06 2016-08-12 마루분 가부시키가이샤 심자외 led 및 그 제조 방법
KR20190085170A (ko) * 2014-06-13 2019-07-17 우시오덴키 가부시키가이샤 질화물 반도체 발광 소자
JP2016039326A (ja) * 2014-08-08 2016-03-22 ウシオ電機株式会社 窒化物半導体発光素子
TWI577046B (zh) * 2014-12-23 2017-04-01 錼創科技股份有限公司 半導體發光元件及其製作方法
KR101848034B1 (ko) 2015-01-16 2018-04-11 마루분 가부시키가이샤 심자외 led 및 그 제조 방법
JP5953447B1 (ja) * 2015-02-05 2016-07-20 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP2017050439A (ja) * 2015-09-03 2017-03-09 豊田合成株式会社 紫外発光素子およびその製造方法
KR102056414B1 (ko) 2015-09-03 2020-01-22 마루분 가부시키가이샤 심자외 led 및 그 제조 방법
CN108140695B (zh) 2015-09-17 2021-02-09 晶体公司 包含二维空穴气体的紫外发光器件
CN107534072B (zh) 2016-03-30 2019-04-19 丸文株式会社 深紫外led及其制造方法
AT519500B1 (de) * 2017-01-03 2019-03-15 Univ Linz Lichtemittierendes Halbleiterelement
JP6438542B1 (ja) * 2017-07-27 2018-12-12 日機装株式会社 半導体発光素子
JP7316610B6 (ja) 2018-01-26 2024-02-19 丸文株式会社 深紫外ｌｅｄ及びその製造方法
JP2020021798A (ja) * 2018-07-31 2020-02-06 日機装株式会社 窒化物半導体発光素子及びその製造方法
JP7140978B2 (ja) * 2019-05-27 2022-09-22 日亜化学工業株式会社 窒化物半導体発光素子の製造方法
JP2023184298A (ja) * 2022-06-17 2023-12-28 スタンレー電気株式会社 垂直共振器型発光素子及びその製造方法

Citations (6)

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US20030085409A1 (en) * 2001-11-02 2003-05-08 Yu-Chen Shen Indium gallium nitride separate confinement heterostructure light emitting devices
JP2003309071A (ja) * 2002-04-15 2003-10-31 Mitsubishi Cable Ind Ltd ＧａＮ系半導体結晶基材
CN100382343C (zh) * 2003-10-28 2008-04-16 夏普株式会社 半导体器件的制造
CN101515700A (zh) * 2008-02-22 2009-08-26 住友电气工业株式会社 Iii族氮化物发光器件及制造iii族氮化物基半导体发光器件的方法
US20090251883A1 (en) * 2008-03-13 2009-10-08 Sharp Kabushiki Kaisha Light-emitting device as well as lighting apparatus and display apparatus using the same
US20100059734A1 (en) * 2008-09-09 2010-03-11 Kei Kaneko Semiconductor light emitting device and wafer

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JP3439161B2 (ja) * 1999-08-03 2003-08-25 三洋電機株式会社 窒化物系発光素子
JP3614070B2 (ja) 2000-01-17 2005-01-26 日亜化学工業株式会社 窒化物半導体発光ダイオード
JP2003017741A (ja) * 2001-03-21 2003-01-17 Furukawa Electric Co Ltd:The ＧａＮ系発光素子
US7005685B2 (en) * 2002-02-28 2006-02-28 Shiro Sakai Gallium-nitride-based compound semiconductor device
JP2003289156A (ja) * 2002-03-28 2003-10-10 Stanley Electric Co Ltd 窒化ガリウム系半導体結晶の成長方法及び化合物半導体発光素子
GB2407700A (en) * 2003-10-28 2005-05-04 Sharp Kk MBE growth of nitride semiconductor lasers
JP2010258096A (ja) * 2009-04-22 2010-11-11 Panasonic Electric Works Co Ltd 窒化物半導体発光素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030085409A1 (en) * 2001-11-02 2003-05-08 Yu-Chen Shen Indium gallium nitride separate confinement heterostructure light emitting devices
JP2003309071A (ja) * 2002-04-15 2003-10-31 Mitsubishi Cable Ind Ltd ＧａＮ系半導体結晶基材
CN100382343C (zh) * 2003-10-28 2008-04-16 夏普株式会社 半导体器件的制造
CN101515700A (zh) * 2008-02-22 2009-08-26 住友电气工业株式会社 Iii族氮化物发光器件及制造iii族氮化物基半导体发光器件的方法
US20090251883A1 (en) * 2008-03-13 2009-10-08 Sharp Kabushiki Kaisha Light-emitting device as well as lighting apparatus and display apparatus using the same
US20100059734A1 (en) * 2008-09-09 2010-03-11 Kei Kaneko Semiconductor light emitting device and wafer

Also Published As

Publication number Publication date
EP2568512A4 (en) 2015-12-09
US20130037820A1 (en) 2013-02-14
KR101399250B1 (ko) 2014-05-27
WO2011125449A1 (ja) 2011-10-13
JP2011222728A (ja) 2011-11-04
CN102792470A (zh) 2012-11-21
JP5549338B2 (ja) 2014-07-16
EP2568512A1 (en) 2013-03-13
KR20120117892A (ko) 2012-10-24

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