CN102782966B - 在C‑方向错切小于+/‑15度的m‑平面基底上的半极性III‑氮化物光电子装置 - Google Patents

在C‑方向错切小于+/‑15度的m‑平面基底上的半极性III‑氮化物光电子装置 Download PDF

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CN102782966B
CN102782966B CN201180012048.9A CN201180012048A CN102782966B CN 102782966 B CN102782966 B CN 102782966B CN 201180012048 A CN201180012048 A CN 201180012048A CN 102782966 B CN102782966 B CN 102782966B
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CN102782966A (zh
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P·S·徐
K·M·科尔奈
R·M·法雷尔
D·A·海格尔
H·太田
A·泰亚吉
S·纳卡姆拉
S·P·德恩巴阿斯
J·S·斯派克
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University of California San Diego UCSD
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CN201180012048.9A 2010-03-04 2011-03-04 在C‑方向错切小于+/‑15度的m‑平面基底上的半极性III‑氮化物光电子装置 Active CN102782966B (zh)

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PCT/US2011/027267 WO2011109754A1 (en) 2010-03-04 2011-03-04 Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/-15 degrees in the c-direction

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US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
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US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
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US8634442B1 (en) 2009-04-13 2014-01-21 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
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