TW480751B - Semiconductor light emitting diode based on off-cut substrate - Google Patents

Abstract

The present invention relates to the fabrication of a light emitting diode, especially a light emitting diode made of compound semiconductor material. Light is emitted from an active region containing multiple quantum well structure. The active region is sandwiched by the upper and lower InGaAlP layers and upper cladding layer. Light emitting efficiency of the active region is improved by adding light and electron reflection layers. InGaAlP epitaxy layer is grown on a GaAs substrate in an inclined angle 111 A by organometallic vapor phase epitaxy (OMVPE) to improve the quality of the epitaxial layer and the surface planarity of the epitaxy and the light emitting efficiency. An off-cut substrate has the same electrical conductivity as the lower layers that are cladding layers close to the substrate. A light transmitting layer with a second kind of conductivity is on top of the higher cladding layer, which is also served as the current spreading layer to spread current and disperse the emitted light. The light transmitting layer consists of a barrier layer, a lattice gradient layer and a window layer whose energy state is transparent with respect to the incidence light.

Description

5-1 Field of the Invention: Ming Li is concerned with a method of manufacturing light-emitting diodes-a method that can replace traditional techniques = in particular, compound semiconductor materials that have materials to make light-emitting diode stomachs, and "^ f"-radiation efficiency of polar bodies Method 5-2 Background of the Invention: InGaAlP-based alloy is a very important semiconductor material for the process of light-emitting diodes with wavelengths between red and green. In ^ GanAlOuP alloy and GaAs substrate are Lattice match, and there is a direct conversion energy gap from UeV to 2 · 3Eν, in which the molecular composition of A1 is about 0 < x < 0.7. When the composition of M is about X ~ 0 At 7 o'clock, InG.5 (Gai-xAlx) Q.5p has an indirect energy level. When the composition of Ai χ ~ la wins In〇.5 (Ga " Al X) 0.5P has another indirect energy level, about 2 · 3eV. In order to obtain efficient light emission, it is necessary to have a strong carrier light recombination and high-efficiency light-emitting diode. InGaAlp-based light-emitting diodes have a short wavelength, that is, red There is a direct conversion energy gap between the visible spectrum of light and yellow-green light for highlighting In addition, ’I η 〆G a i—χΑ 1 X) 〇 · There is a nearly perfect lattice alignment and the semiconductor substrate of V / III / V / III interface in GaAs

Page 5 480751

ΐ: A characteristic of JJH (charge baiance). This characteristic represents epitaxial growth of dagger atoms, atomic levei, and F, such as accurately controlling the thickness of multiple quantum wells (MuUiple wells, MQWs). And the composition is a good candidate element, so it is a good LED stupid crystal material, which also makes InG 5 (Ga! ΧΑι 丄 5P very attractive in the visible light emitting diode system. Figure 1 shows A conventional light-emitting diode structure. The structure in the figure at least includes a heterostructure (double heterostructure, DH) composed of an inGaA 1P alloy system grown on an η-shaped GaAs substrate 101, and DΗ is made by one researcher. I η 〇 5 (G a BU χΑ 1 X) 〇 5P lower layer cladding layer 102, non-doped active layer I n G. 5 (Ga 丨 —χΑ 1 x) G 5P 1 〇3, a consisting of p-shaped I nq 5 (Ga bXA 1 x) 0.5 P higher cladding layer 104, a p-shaped G a P current diffusion layer 105, upper metal 1 106 and lower metal 1 07 . Figure 1 shows that a light-emitting diode is a p-n junction, and a forward bias is applied to cause holes to be injected from the P-shaped cladding layer 104 and electrons from the η-type cladding layer 102 to the active electrode. Area 1 0 3. Active area 103 emits visible light due to the recombination of electrons and motors in this area. Electrons and motors, like minority carriers, are injected into and across the active region 103 and can be recombined via luminescence or non-luminescence (r ecomb i ne). The emission wavelength of an LED based on I nGaA 1 P can be changed by adjusting the composition of A 1 in the active region (inQ 5 (Gai_xAl χ) ^ 5p) 1 0 3, which is corresponding by a correct energy gap. Luminous wavelength. E.g. "at shorter wavelengths" such as yellow or yellow-green

480751 V. Description of the invention (3) '---, the active layer Inu (Gai_xAlx) G.5P 103 must have more ^ components for light emission. The thickness of the active layer 103 also has its importance, which is usually shorter than the incident carrier diffusion lenghth so that the carriers can recombine. The luminous efficiency of the thicker active layer 103 can be reduced due to low-density carriers. The thickness of the active layer 103 is approximately between 0.3 and 0.5 # m. The active area 103 is an area for carrier injection and recombination to generate light. The material quality of the active area ι03 is very high, and its purpose is to get high-efficiency light emission. Therefore, the active region 103 needs very low background intrinsic (ntrrnsnc) impurities, which will reduce the density of the non-radiative recombination center. The highly doped background of the active area ι03 is mainly caused by a high-density depth trap ((^ 叩 ^ 叩 3) in the active area 103), which will cause non-luminous recombination during the process of light emission. A clean and low impurity reaction chamber is necessary for the growth of the active region. In general, the InQ 5 (Gai x Alx) Q 5p active layer 103 is a non-doped region, which can be P-shaped or _, The impurity density is between 5 氺 1 015 and 1 氺 1 0 17 / cm. On the other hand, the background impurity in the active area i 〇3 increases with the increase in the composition of A 1, which is due to the active Increasing the degree of A in the region 丨 〇3 leads to an increase in impurity concentration. For shorter-wavelength light divergence, the increase in the composition of A 1 in the active region 103 will be accompanied by the internal quantum efficiency of the emitted light. efficiency). As mentioned above, the southern A1 composition in ι03 in the active region will be accompanied by an increase in the depth level (deep 1 eve 1).

480751

The luminous effect is also reduced. 5. Description of the invention (4), and the depth level will cause a non-luminous recombination rate. On-type and P-type cladding layers (120 and 104) Source), and have higher energy muscles and J sources than the active area 103 (this I white, to PP Zhuang, and the carrier and emitted light. These coatings need a good 1 ≫ The main dopant concentration is provided to provide sufficient incident carriers to enter t ECG and suitable to high-efficiency luminescence. The cladding layer InjGa ^ AlDup produces iO3 and reaches to prevent carriers from the active area 1 〇3 reflow to the cladding, & must be thick enough to affect the LED's emission efficiency. As a result, a large amount of radiation but not so much

In the cladding layer, the leakage current is caused by the non-luminous carriers of the overflow carriers. Generally, the light emitting efficiency is generated by the combination of the conventional LED double heterojunction.

Dan I d o u b e I heterostructure (DΗ) will degrade with wavelength _ ″. Text], and clothing minus (above the P-shaped cladding layer 104, there is a current extension.;, ^ Huanji 1 005 for the effective spread of light. The current diffusion layer 105 is a Φ ^? T, (Increase) A semiconductor that can penetrate the light emitted by the active layer to make it penetrate out is equivalent to θ ^ Tian Yu, a window user, and this semiconductor emits light from the active area 103

Sexual. In addition, the current diffusion window layer 105 must have 4 = Marco teeth, effectively the current entering the active area 103 and the cladding layer (102 and 104) are secretive. It also spreads out, so it needs the same doping concentration and thickness. In order to overcome the above-mentioned difficulties, the LED needs to be designed so that light is emitted from the light.

480751 V. Description of the invention (5) Diodes have higher efficiency when emitting. In the present invention, several requests for LEDs based on InGaA 1P will be made to make an efficient light-emitting diode. 5-3 OBJECTS AND SUMMARY OF THE INVENTION An object of the present invention is to provide a method for forming a light emitting diode by using a compound semiconductor material. Another object of the present invention is to provide a method for forming a light emitting diode by using a compound semiconductor material which can replace the light emitting diode in the conventional technology, and improve the radiation efficiency of the light emitting diode. According to the above purpose, the present invention proposes a new material manufacturing method for manufacturing LED design, so that light has higher efficiency when emitted by a light emitting diode. In the present invention, several items of the InGa A 1P of the LED are different from the traditional technology request items Will be proposed for making an efficient light-emitting diode. 5-4 Detailed Description of the Invention: Preferred embodiments of the present invention will be discussed in detail later. The embodiment is used to describe a specific example of using the present invention and is not intended to limit the present invention.

Page 9 480751 V. Description of the invention (6) Scope. The light emitting diode based on InGaA 1P can change the composition of In〇5 (Ga 1 _χΑ 1 X) 〇5P alloy A 1 in the active layer to achieve a correct energy gap corresponding to a specific emission wavelength, and Change the n of the active area. 5 (G a 丨 -XA 1 X) 〇 0.5P also causes the width of the band gap to become smaller, and its structure will tend to be more ordered (or r de e r). In order to achieve the same emitted light wavelength, the A 1 component in the active region needs to have a higher content, but this will cause a high impurity density in the active region and a low radiation efficiency. Ordered structures, for example, the order or composition of atoms in a semiconductor thin film can be caused by the static displacement of the atoms in the local tetragonal deformation of the lattice: after the transformation In the I η 〇5 (G a 1-χΑ 1 X) 〇5P alloy system, I ndium (I η) has a tetrahedral covalent radius larger than Ga or A 1 atoms 9 . Therefore, the difference in tetrahedral covalent radii will produce a clustering of like species. As a result, local deformation shrinkage and dilation of the crystal structure are relatively generated. Judging from the thermal concept of spinodal decomposition, a composition alloy located in the miscibility energy gap of the phase diagram will produce orderly to orderless transitions at a certain transition temperature. The difference between experiment and thermal theory lies in the consideration of the formation of kinetic energy and surface structure order. From our experiments, the I n Q 5 (Ga 丨 -χΑ 1 x) Q 5 P thin film follows the basic theory of spinodal decomposition thermodynamics, and there is a tendency to have a certain degree of sequential structure between the growth temperature of 6 6-7 7 0 degrees.

Page 10 480751 V. Description of the Invention (7). The epitaxial growth of the light-emitting diode at a growth temperature above about 700 degrees is a claim of the present invention. On the other hand, the secondary surface layer of <〇〇1> GaAs re-grown in the direction of <1 10> has a region of variable compression and spreading. Because marriage (Ind i um) has a greater tetrahedral common radius than Ga or A1, the variability of its growth surface (growing surface) is prolonged and pressed. A suitable nodule location (energyfav 〇rab 1 e nucleation site) is very suitable for in, ai or Ga growth. The point implies that 'in addition to the above-mentioned regular and irregular turning temperatures', the formation of a regular structure is related to the surface structure of the substrate. The degree of our experiment can be improved by using GaAs substrates with different cut angles. The regular and irregular turning temperatures decrease because the substrate GaAs cutting angle $ increases. On the surface of the miscut G a A s substrate, the surface reconstruction area that is periodically extended and contracted can be improved and decreased by increasing the miscut angle of the substrate GaAs. From the results above. ^ Increasing the miscut angle of the substrate will significantly reduce the degree of atomic order regularity in I nGaAp. 〇 ΪΪ: At the growth temperature, InG.5 (GaHAlx) G.5P alloy system, 〒 is a factor that reduces the quantum efficiency, so it is necessary to increase the A component in the ϋ52 &amp; 1_χΑΐ x) qj active region to obtain a specific energy level width II. Therefore, In ° .5 (Gai is) The crystals grow on the substrate of 9, and the turning temperature is reduced to less than 700. C. In addition, InQ.5 (Gai-xAl X) with A1 ◦ Quantum in multiple quantum wells

Page 11 480751 V. Description of the invention (8) The efficiency can be improved by increasing the angle of cut of the substrate. The more the bevel cut of the g &amp; As substrate is directed to the <111> A surface, the more cation terminated step edges will be exposed. The entry of adsorbed impurities is through step traps, and is related to the shape of the bonding between the adsorbed impurities on the growth surface and the terminal step. There is a single bond at the edge of the positive step and provides a weaker adsorption site. Therefore, the step trapping efficiency will reduce the adhesion effect of the growing surface as the chamfering angle of the growing surface along <1 1 1> A increases. Therefore, the addition of impurities in the active region (such as silicon or oxygen) will decrease as the &gt; angle increases. These impurities can be used as the deep layer of the light emission area and the center of non-luminous recombination, and affect the emission efficiency of the LED. In the stomach of the present invention, the use of GaAs as the substrate and the oblique cut along the angle <1 1 1> a is equal to or greater than 丄 0 degrees is considered to have better efficiency of the emitted light. In addition, the smoothness and quality of InG a A 1P-based LED films can be improved by growing a beveled substrate G a A s structure. In the past, epitaxial techniques, such as liquid phase epitaxy, were used to modify the surface smoothness of semiconductors.

Liquid Phase Epitaxy (LPE) or gas phase epitaxy (chemical

Vapor Deposition (CVD) to improve the smoothness of the film. In the present invention, the light emitting diode (LED) based on InGaA 1 P and the organic metal vapor phase epitaxy method (OMVPE) is used to grow at an oblique cut (0ff-cut) angle greater than 1 〇 妁 angle on the long substrate GaAs to improve film smoothness. According to our research, the smoothness of the LED structure will increase with the increase of the substrate cut-off angle. This smoothness improvement

480751 V. Description of the invention (9)

For group 3-5 mismatch heterostructures such as GaP, AlGaP, and I n G a A 1 P-based stupid crystal growth is particularly evident on GaA s substrates. These stupid crystal layers such as GaP, A 1 GaP and InGaA 1 P alloys and substrates have mismatched privacy of about 0-3.6% and are related to the composition of the alloy. During the deposition process on non-matching substrates, the initial growth of the film tends to grow crystals on the substrate, such as small islands. The size of these islands increases as the mismatch between the film and the substrate increases. This will lead to the formation of high-density linear differential rows on the film (t h r e a d d i s 1 oc a t i ο η), and increase the surface roughness of the deposited film. These high-density crystal defects and rough film surfaces can be improved by increasing the number of crystal points on the surface, reducing the area of nodule islands, and making a gradient (g r a d i e n t) change in the lattice constant of the unmatched heterostructure. Increasing the number of thin film nodules and reducing the area of the island are another important point in the present invention. GaAs substrates can be applied with a bevel greater than 10. Angle and is inserted into the LED In with an InGaAlP interlayer. 5 (Gai_xAlx) Q 5p The gradient between the worm crystal layer and the window layer is used to achieve this effect. On a substrate of f-cut, the stepped edge of the substrate will increase as the angle of substrate miscut increases. These step edges provide a low energy location to the nodules of the Shen ^^ membrane. Therefore, small island nodules with higher density and smaller area will increase the film quality and reach a smoother level on the miscut substrate. ^ The change of film quality will increase the output efficiency of LED light emission. In addition, the smoothness of the film surface can increase the range of component manufacturing processes, such as light-emitting diodes / poles ^ metal contact manufacturing and packaging, the quality of the film, the efficiency of the light-emitting body, and the range of the process at the time of manufacturing (process window 〇f deviee Improvements in fabrication) are in the claims of the present invention.

480751 V. Description of the invention (ίο) The basic structure of In0.5 (GaB XA 1) 0.5P in the LED is on a GaAs substrate with a cut angle of more than 10 °. Summarizing the above characteristics, the first embodiment of the present invention is shown in a cross-sectional view of a light emitting diode as shown in FIG. X) G 5P is grown on the η-type inclined substrate GaAs 20 8. This device includes at least one η-type GaA s buffer layer 2 0 9 and an η-type AlAs / Al xGa ^ xAs- or In0.5 (Gab XA1 x) G.5P-based distributed Bragg reflector (DBR) 210, an n-type I n 0.5 (G a hAIJuP lower cladding layer) 21 1, a strain ( strain) Undoped Iny (Gabu XA1 x) LyP / In. 〆G a Bu XA 1 x) 〇 5P multiple quantum well (MQW) 2 1 2, a p-type I n G. 5 (Ga i_xA 1 x) Q. 5P Higher layer cladding layer 213, a thin 111 {) 5 (631- / 1? () 0.5? Middle mesas layer 214, one-mouth-type 03 or eight 103 current distribution layer 2 15, a top metal contact 2 1 6 and a bottom metal contact -217 ° Fig. 2 A cross-sectional view of a light emitting diode is similar to Fig. 1 with a conventional double heterostructure, except that Figure 1 InGaA1P-active area 103 is shown in Figure 2 A deformation I ny (G a ″ × Α 1 x) 1 -yP / I η 〇5 (G a 1 _XA 1X) 05P multiple quantum well 212 replaced. A η-type light reflection layer AlAs / AlxGabXAs-, AlAs / In 〇.5 (GabxAlx). 5P or Irio / Gai-xAlx). _? Based on a distributed Bragg reflector (DBR) 210 placed in In0.5 (Gahx A 1 x) g · 5P-The bottom of the LED structure to provide light reflection. In addition, &lt; -I π 0.5 (

Page 14 480751 V. Description of the invention (11)

Gai_xAl x) 0.5P current blocking layer 214, placed in p-type Ino./GahAl x). The cladding layer 213 is in the middle of the p-type GaP, AlGa or AlGaAs window layer 215.

The L E D structure in FIG. 2 is formed by a layer of approximately 0.2-0.04 / m Shixi doped GaAs buffer layer 209 is grown on Shixi doped slope substrate 208. The G a As buffer layer 209 is used to improve the smoothness and uniformity of the growing surface of the GaAs substrate. Growing the GaAs buffer layer 209 is necessary for the better quality of the LED multi-quantum well 21 2 hetero interface-hetero-interface s thin film. Then ga As buffer layer 209 'a distributed Bragg ref layer , DBR) 2 10 long on the GaAs buffer layer 2 0 9 to provide light reflection. The material of this light reflection layer is selected from the prohibited band height of the energy level and the active region 212.

Composed of similar materials. The choice of materials for this layer requires consideration of lattice matching, differences in energy bands and reflection coefficients, and doping limit of individual reflecting layers. Generally speaking, a period of ten to twenty distributed Bragg reflector (DBR) 210 can increase the external quantum efficiency of emitting light by 1.5 times than that of ordinary LED but When a Bragg reflector (DBR) is not used. Eight people 3 / ^ 1 / 31_ / 3 The wavelength of the reflected wave of the Bragg reflection layer 210; 1 is determined by the thickness of the individual reflection layers, and its functional relationship is as follows: d / 4n, n 疋 reflection of each layer of the Bragg reflection layer 21 0 coefficient. The purpose of the Bragg reflector

Page 15 480751 V. Explanation of the invention (12) The energy gap of the active region 21 must be greater than the energy gap of the active region 21 2 to prevent any light absorption. In addition, the difference between the layer and layer reflection coefficients of each layer in the Bragg reflective layer 2 10 must be as large as possible to obtain a better re-reflective efficiency of the Bragg reflective layer 2 1. However, the Bragg reflecting layer 21 also functions as a current injection transfer layer that requires a high-density (2 * 10 n / cm2) conductive carrier. Due to the intrinsic limit of n-type dopant concentration in the Bragg reflection layer of AlAs-substrate ^ Hmitati), the Bragg reflection layer 210 is restricted to work in a dusty direction and at the same time obtain a reflectance greater than or specifically At 9 0-9 5% efficiency. Generally speaking, the period of the Bragg reflection layer (DBR) 21 based on inGaAip_ is about ten to two: the candidate element of another Bragg reflection layer 21 is ^ f: alloy 'It can be better than A1As / A1GaAs _Bra of the substrate: reflection. · On the second board & said that the sample reaches the matching / Λ conductivity, but ‘it is offset by the controllability of the day-to-day grid matching grown on the GaAs substrate. Used to ::: Sublayer cladding layer In ° .5 (GahA "). 211 is about. · 7 &lt; χ &lt; 1, i and dynamic— = 2 two &quot; The thickness of the type cladding layer 21 1 must be related to the emission wavelength of: two =. To prevent carriers from diffusing from the active area to the ratio of the ions, the length is thick, and the thickness of the coating layer 211 is about 〇Ύ like η-type In. 5 (Gai-x υ · υ · 8 / / m. In the present invention n-type package

Page 16 480751 V. Description of the invention (13) The coating 2 1 1 has a different gradient or stepwise variation in the depth of doping, and the carrier density is about 5 * 10 17 / cm to 1 * 1 0 18 / cm lack of room. In the present invention, the doping of the P-type cladding layer 2 1 3 exhibits a gradient or a step change with depth, and the carrier concentration is approximately 5 * 10 17 / cm to 1 * 10 18 / cm 2. The light output efficiency of LED has a great relationship with the doped concentration of η-type and p-type cladding layers and the profile. The correct I η 0.5 (Gab / 1 X) 〇 5P coating ρ-η type The position of the ρ-η junction in the active region generated by the doping profile is necessary for the effective recombination of electrons and hole luminescence in the active region after current injection. The overflow of any individual injected carriers will cause the generation of non-radiated recombination centers due to the deviation of the position of the ρ-η junction and the diffusion of dopant molecules in the active region, resulting in the efficiency of the emitted light. Reduction. In the present invention, the thickness ratio of the p / type I η 0.5 (Ga i_xA 1 x) Q.5P-cladding layer 2 1 4 with a low / high degree of impurity is about 0.1 to 0.3, In order to ensure accurate carrier recombination, and not cause too much voltage drop or carrier overflow phenomenon in the cladding layer. A good radiation device needs the η-type and p-type cladding layers with a doping density of about 0.75 ~ 1 * 1 0 18 / cm 2 and η-which are closer to the multiple quantum wells, away from the multiple quantum wells. The cladding density of the lower cladding layers is about 0.4 to 0.75 氺 1018 / cm2. Next to 11 type 111 (). 5 (〇81_, 1) () (). 5? Cladding layer 211, a layer of deformed 111/63 Bu / 1 乂 1— / 1110.5 (〇3 卜) ^ 1 (Father) 0.5? (3 1: ^ 1116 (1) multiple quantum well 212 is placed between the η-type and ρ-type cladding layers as the active layer. In the present invention, multiple quantum with InGaAlP as a superlattice Well used to increase

Page 17 480751 V. Description of the invention (14)

2 Efficiency of moving layer and reducing aluminum content in quantum well. In the 1ED, the quantum well, ', port structure will increase the efficiency of the emitted light. A quantum well is formed by a narrow band gap π well lf and a barrier with a higher band gap. As a result, the energies of electrons and holes are quantified (limited) and cannot move freely in the direction of current incidence. However, it can still move on the vertical plane of the incident current and can be recombined. In the multi-quantum well Iny (Gai xA1U / InG 5 (a 1 x) G sp 2 1 2, the conduction band energy level is promoted in the conduction band, and the carriers limited to the valence band promote the valence band energy level. The multi-quantum well structure will shift the effective wavelength of the emitted light to a shorter wavelength. Therefore, the content of the active region 2 1 2 can be greatly reduced. Therefore, for a specific source of emitted light, the Multi-quantum structure will increase the lifetime of non-radiative recombination, and reduce the absorption of light emission. In addition, multi-quantum wells! Η Ga!% Yaiyama-// 111〇.5 (68b / 1/1 丄. 疋 212 of The total thickness is about 50 to 15011111, which is smaller than the thickness of the active region (goo-goo nm) of the heterostructure in Figure 2 for the application of mesh 4. This will cause the active region to increase the carrier density and accelerate the light Recombination. The structure of the multi-quantum well reduces the content of A 丨, and the lifetime of the radiative recombination carrier is also shortened. Therefore, the quantum efficiency of the active region 212 of the multi-quantum LED will increase substantially. The aluminum composition of the alloy in the multi-quantum well 2 1 2 The molecule is between 0 and 0 _ 3, and the corresponding wavelength is between red and green-yellow It is adjusted according to the thickness of the quantum well 21 2 and the number of quantum wells. In the multiple quantum well, a direct energy gap alloy InG5 (Gai_xAlx) G5P is formed. The wavelength of the emitted light of the multiple quantum well 21 2 is greatly different from the thickness of the well. Relevance. When the thickness of a multi-quantum well decreases, one of its electric band quantized carriers will push up the effective sub-band, and the covalent band quantized carriers will bring the effective side energy to

480751 V. Description of invention (15) '一 &quot; · Push down. The quantized band structure of the multi-quantum well 212 is relatively sensitive at well thicknesses ranging from about 1 to 100 nm. As a result, owing to the quantization of the energy level structure, the wavelength of the electron plate hole will be shorter when they are recombined. The general total thickness of InQ.5 (Gai_xAlx) G.5P alloy is about 1 to 1 Onm, and the optimal luminous efficiency period is from 0 to 50. On the other hand, the internal quantum efficiency of light emission is also related to the thickness ratio of well to plug (well / resistance). When the effective carrier recombination generally occurs, the ratio of well to congestion is approximately between 0.75 and 1.25. Lattice strain is also an important consideration in the design of LED multiple quantum wells 21 2. The biaxial strain of the multi-quantum well structure (biaxial s tra i η) can split and degrade the valence band energy level within the quantized band structure. This will affect the optical and electrical properties of the film's band structure and film material. Both compressive and tensile stresses will positively contribute to the luminous efficiency of LEDs. The lattice asymmetric stress acting on the multi-quantum well 2 1 2 is equivalent to the energy level structure and valence band energy level splitting. For compressive biaxial stress, the heavy ho 1 e energy level becomes a ground state, which has a lower effective mass character in the valence band. On top. This compressible stress will strengthen the movement and recombination of carriers on the vertical plane of the incident current, and cause internal quantum efficiency in the quantum well. On the other hand, light holes (1 i ght ho 1 e The biaxial stress' for stretch deformation is a ground state and has a higher effective mass. Although the effective mass in the quantum well is large when subjected to tensile stress, the electron and

Page 19 480751 V. Description of the invention (16) The k-space distribution with a small number of holes, a, M ^ _ 1V (P0r k-space) reduces the spontaneous emission coefficient, and the sample can increase the internal quantum efficiency . Therefore, both compressive and tensile stresses contribute to the rate of light emission in the quantum well. According to our research, when the mismatch with other structures in LED is over 1%, the multi-quantum well 1ny (G ^ -xAl χ) yP-212 will loosen. LED Life

Periodic tests show that if the f.,, X, outer, ancient θ ridge mismatch is not selected at greater than 1%, the device will be easy ^, because of the internal mismatch stress on heterostructures ) Is an inappropriately misplaced source in a multiple quantum well. In the manufacturing and operation of the element, it caused point defects. In order to improve the light output efficiency of the multi-quantum well with GaAs substrate with limited or reduced stress in the light output efficiency, Shen Xian, n㈣ makes the daily mismatch of u between 0.2% and 6%. between. In the present invention +, the optimal LED round-out efficiency can be obtained from the compressive strain of about 0.3 to 0.6% of the crystal mismatch extending along the growth direction. Figure 3 shows an LED multi-quantum well structure. The figure contains at least one DBR. A quaternary compound In0.5 (Gabu XA1 x) Q SP alloy is grown on the n-type inclined substrate G a A s 3 1 8 'The device includes at least a GaAs buffer layer 319, AlAs / Al Ga x As-, AlAs / In 0.5 (Ga x A1x) 0.5P or In 0.5 (Ga x A1x) 0.5 dispersed Bragg reflection layer ( distributed Bragg reflector (DBR) 320 '-n-type inG 5 (Ga and XA1 x) 〇.5P lower cladding layer 321 and a deformed Iny (Ga bXA 1 x) and / I n 〇.5 (Ga and XA 1 χ) 〇_5P multi-quantum well 3 2 2, a Iny (〇31_ / 1,) Bu /-substrate electron reflective layer 3 2 3, a 13 type 111 () 5 (〇3 Bu / 10 ( ). 疋 Higher cladding layer 3 24, a thinner InQ · 〆Ga ^ xAl JG 5p current honeycomb layer

Page 20 480751 V. Description of the invention (17) A top metal contact 3 2 5, a p-type GaP or p-A1GaAs current spreading layer 326 contact 3 2 7 and a bottom metal contact 3 2 8. In FIG. 3, a thin deformable plug layer 325 or multiple electron reflection layers 323 is inserted on the p-shaped cladding layer 3 2 4 to increase the barrier height of the cladding layer. The electron reflection layer 323 is also grown by the MVPE method, which requires very accurate interface ratio, accurate control of layer thickness and composition

. The finely deformed plug layer 3 2 5 has an energy level equal to or greater than that of the cladding layer and is placed in a region close to the active layer 3 2 2 to prevent carriers from overflowing into the cladding layer to improve luminous efficiency. The p-type IriG 5A1G 5p electron reflective layer 3 2 3 is strained. Its position is close to the active region 322, and it has considerable thickness and stress to prevent electron tunneling from the active region 32 2 (1: 11111 ^ 1 丨1 ^) Effect II On the other hand, the supercrystal structure of the electron reflection layer 32 3 is designed to reflect j :, its thickness is about N / 4 deBr0gUe electron wavelength, where N is a p / In: The reflectivity is adjusted by the thickness and period of T in the P-type supercrystal In ° .5 (Gai_xAlx II. In the electron reflection layer well Γ phase =: n ° .5 (Gai-xA ^^

When the light emission efficiency of 32 ° 3 ° \ f2 is also increased. This is due to the reason that electron reflection = shoot // Λ force :. However, this phenomenon has a gradient in the range of the individual electric currents ("-η or (step) is particularly noticeable when the thickness increases.

Page 21 48〇75l V. Description of the invention (18) 323 1110.5 (631- / 1 \) 05? Thickness change (Don't plant 3 (^ 611 * 〇, which represents the reflected energy of different incident high energy electrons from the active area Therefore, if the carrier region p is in a gradient or step-like region and obtains a high electron incident energy, the diversity of the electron reflex sublayer (variety in electron reflector) can be obtained by a gradient change in the thickness of the layer. In the present invention, The electron reflection 3 2 3 contains at least one deformation congestion I η 0.5A 1 0.5P followed by Ino./GahAl x) Q 5P / InQ.5Al G.5P super layer, σ, σ structure layer close to the active layer 322 In order to reflect the overflow carriers from the active layer, the thickness of the Messer layer In〇5 八 １〇_ # is about 20-401111, 111 (). 5 (〇 &amp; 1_ / 1,). 5 //111().5 and 8 (1.). 5? The supercrystalline structure period is about 10-40, In. XGahAl x) G 5p / ln () 5A1 G.5P supercrystalline structure thickness is about 2-5 nm There is a fixed, stepwise, or gradient thickness profile in the I n G. 5 (G abu XA 1 x) G 5p supercrystalline structure layer.

In FIG. 3, the multi-quantum well 32 2 and the electron reflection 323 are a p-type 111. .5 (^ 811 八 1 \) 0.5? -Higher cladding layer 324. Mouth-type 1! 1 (). 5 (631_ / 1 丄 .5 P coating 3 2 4 is used to inject carriers into the active region 3 2 2 and confine the carriers to the active region 3 2 2 111 {). 5 (〇3141〇 {). 丨 The A 1 composition of the cladding layer 3 24 is approximately between 0.7 &lt; X &lt; 1, which is related to the wavelength of the light emitted from the active region 3 2 2 '在 红 ( 6 2 5ηm) to yellow-green (570 nm). The thickness of the p-type cladding layer 324 must be greater than the diffusion length of the injected carriers to prevent the carriers in the active region 322 from entering the cladding layer. In addition, the ρ-type cladding layer 3 24 must be thicker than the η-type cladding layer 3 2 1 because of the diffusivity of the ρ-type doped elements such as Zn or Mg during the growth of ED. A typical p-type M. 5 (Gai xA1 υ

Page 22 480751 V. Description of the invention (19) The thickness of the low cladding layer 3 2 4 is about 0.7 to 1.5 # m. The p-type cladding layer with a gradient change or two-stage doping has a doping concentration in the present invention of between 4 氺 10 17 / cm and 1 氺 1 0 18 / cm. The external light efficiency and the degree of doping of LEDs are related to the degree of doping of the η-type and p-type cladding layers. in. 5 (Gai χ A 1 χ) 〇- 3 2 4 π correct '' η-type and ρ-type cladding layer impurity profile and active region 3 22 ρ-ηπ correct π junction position for effective light emission Sexual recombination is necessary. Any incident carrier overflow will reduce the light efficiency due to the recombination caused by the misalignment of the ρ-η junction and the diffusion factor into the active area (int e r d i f f u s i ο η) nonradiative recombination center. In the present invention, I η 〇 5 (G abu XA 1 x) 〇5P 2 4 ′ with a gradient doped coating layer has a thickness ratio of south / low penetration of about 0. 1 to 0. 3, to ensure that the accurate carrier recombination of the coating does not cause a large voltage drop or carrier overflow. A good light-emitting diode device needs to be far away from the multi-quantum well 32. The n-type and ρ-cladding coatings have a high doping concentration (0.75 to 1018 / cm2) compared with the approach to the multi-quantum well Low n-type and P-type coatings have a low impurity concentration of 3 2 2 (〇4 to 0 · 7 5 氺 1 0 18 / cm. In the case of ρ-type coatings, it is a layer of impurity density. 111..5 ((^ 14] ^) 0.51) intermediate layer 3 2 5 larger than P_-type cladding layer 3 2 4 is used to ensure that the injected carriers can pass through and spread smoothly, and to ensure this intermediate layer High conductivity to spread the current efficiently on a plane perpendicular to its injection direction. The composition of the thin intermediate layer 325A1 (x is between about 0.1 and 0.5) is better than that of P-type I n 5 (G a Bu χΑ 1 X) 0 ·

Page 23 480751 V. Description of the invention (20) The cladding layer 324 should be small and match the lattice of the P-type cladding layer. The intermediate current spreading layer 3 2 5 with a thickness of about 50-100 nm and a higher impurity density than the p-type conductivity layer is a low-resistance channel designed to produce a vertical plane of injected current. Moreover, the intermediate layer 111. .5 (〇31_ / 1〇..5?-3 2 5 has a larger energy gap than the active area 3 2 2 to prevent the light emitted by the active area 3 2 2 from being absorbed. Because this intermediate layer 3 2 5 The thickness is very thin and has a higher impurity density than the p_-type cladding layer 3 24 but lower than the window layer 3 2 6. It can be used as a low-impedance channel for the current g-plug layer in the growth direction and the current incident on the vertical plane in the growth direction .Because the current spreading area has a wide range, the density of the injected current in the element will decrease due to the increase of the spreading panel. This will lead to the improvement of the LED light emission efficiency. This type of P-type cladding layer 3 2 4 and the active area The current spreading effect in 3 2 2 will be determined by the thickness, composition, and degree of impurity of the plug layer. I η 〇.〆Ga ι-χΑ 1X), typically 1110.5 (〇31_, 1) ^ ( ) .5? What is the doping concentration of the intermediate layer? 2-4 times of the type cladding layer 324 is 1-3 * 1 018. The composition of A 1 is about 0.2-0 · 4 in this layer. θ A way to make I ng · 〆G a 卜 × Α 1 X) g. The way in which the light-emitting diode produces the most work is to play at ρ-type I η 0.5 (G a i_xA 1 X) 0.5 P layer 3 2 5 on top plus-reed window layer 326. The concept of using GaP, AlGaP, or AlGaAs as the window layer and the function of dissipating the LED current has been studied in the past literature and has been published in patent cases. G a P or G a A s P has a relatively light-transmittable energy gap for the light emitted by the main and private σ soil * dynamic region 3 2 2 of l e D. In the present invention, the OMVPE method is used to grow the g ^ As; &amp; on an oblique direction <111> angle. The LED structure includes a P-type GaP, AlGaP or AlGaAs window layer 3 2 6. This &amp;

480751 V. Description of the invention (21) Freedom of idea 1 196-In the literature, epitaxial deposition of AiGaAs, GaP or other family semiconductor surfaces is performed by LPE or CVD stupid growth to improve the smoothness of the deposited film. In the present invention, the D-V compounds such as Ga P, A1 xGabXP (x &lt; l) and A1 yGa and yAs (0.5 &lt; y) are grown by the MOVPE method at the LED emission wavelength at 6 50-5 6 In the 5 nm range, they are used as window layers to disperse the injected currents, because they are transparent to the emission wavelength of 6 50-5 65 nm. In addition, the three GaP, AlxGa and χP (χ &lt; 0 · 1) and AlyGa The high doping concentration (capacity) of yAs (0 · 5 &lt; y) is also one of the considerations for selection. They can all be achieved with a heavy doping density (&gt; 2 * 1 0 18 / cm 2). The current spreads. As the incident carrier (degree of penetration) of the window layer increases, the efficiency of the LED also increases. This is because as the doping concentration increases, the degree of doping of the injected carriers in the window layer 3 2 6 along the direction parallel to the surface of each layer also increases. Typical window layer 3 2 6 has an impurity concentration of approximately 3 -8 * 10 18 / cm. However, the window layer 3 2 6 has a degree of impurity higher than 1 * 1 0 iV cm, which causes lattice defects and reduces the life of the LED. In addition, the luminous efficiency is also related to the thickness of the window layer 326. When the thickness of the window layer 3 2 6 increases, the wider the current spreading area and the light emitted from the side of the LED will increase, the output of the LED will also increase. Degree of heavy impermeability (&gt; 1 * 10 18 / cm2) GaP, A 1 xGa BU XP (χ &lt; 〇 · 1) and a 1 yGa &quot; A s (0 · 7 &lt; y) and thickness between 1 0- The window layer between 1 # 5 m is used in the present invention, LEDs with a wavelength of 630 nm and a brightness of 60mcd; a wavelength of 590nm,

LEDs with a brightness of 100mcd; LEDs with a wavelength of 572nm and a brightness of 40mcd. Figure 4 is based on Iny (Ga 丨 —χΑ 1 x) 丨 -yP as a gradient or stepped

Page 25 480751 V. Description of the invention (22) Super-lattice LED element structure light-emitting diode with (0 〇1) lattice constant, the figure contains at least one quaternary compound InG 5 (Gai_xAlx) G 5p alloy The dispersive Bragg reflector (DBR) 431 is grown on the η-type inclined substrate GaAs 4 2 9. The device includes at least an n-type Ga As buffer layer 4 3 0, a dispersive Bragg reflection layer (DBR) 431, an n-type lnG5 (Gai_xAix) Q5Hg ^ &amp; cladding layer 432, and a deformation iny (Gai_xAlx) 1-yp / In () 5 (Gai xAlx) Q sP multi-quantum well 433, a 1117 ((^ 卜 『1 山 ^ substrate electron reflection 434, a 1) type 111〇5 (higher cladding layer 43 5, a thin In.5 (Gai χΑ1χ). ^ 2 f plug, 436, a P-type Iny (Gai_xAl x) 1-yp with a gradient composition change: a superlattice structure 437, a p-type GaP or p-type AlGaP current distribution The layer 4Υ38 is composed of a top metal contact 4 3 9 and a bottom metal contact 4 4 0.), =: two gadolinium—a layer of light extraction layer (Hght extrac1: i〇n layer). t The honeycomb layer 436, said right / contained three layers, from bottom to top, respectively, the current is mainly used to block the dry layer 437 and the window layer 438, the light extraction layer, and make these light ^ the P type below As shown by the light emitted from the 1nGaA1P layer, there is a p-type for more efficient radiation. The overall structure in Figure 4 is a stepwise change of super = y (Ga 1 U (00 D lattice constant gradient or order P-type window). Layer 438 ^ Γ Based on 4 3 7 placed in the middle of the current plugging layer 436 and the changed superlattice 4 3 7 b? Type I ny (ι-χΑ 1 x) i-yP has a gradient composition GaP window layer 438 of η G. 5 (Ga Bu XA 1 x) 〇 5P alloy 4 3 6 and p-type ((^ 4 ^) .. # 合 / 1/1 for the gradient layer ° (^ 1) window layers 438 and 1 〇0.5, and the lattice constants of the GaP / In conforming layer &amp; M differ by about 3.6% η 0 · 5 (Ga Νχα 1 X). The critical thickness of the heterostructure is large.

480751 V. Description of the invention (23) It is about 5-10 nm. In this way, the G a P stupid crystal layer will form an island-like crystal on the I η 0.5 (G a 丨 _XA 1 x) 〇 5P intermediate current plugging layer 4 3 6. When these epitaxial crystal islands are combined, a high-density streak-distorted crystal will be generated on the GaP window layer 43 8 due to the combination of these epitaxial islands, and cause the surface to be rough. These defects deteriorate the quality of the film and the function of the LED element. High-density crystal defects in the window layer can cause light absorption centers, reduce the external efficiency of light, and reduce its lifetime. In addition, these lattice defects will increase the difficulty of the process and packaging such as wire bonding and contact points. Therefore, when manufacturing a heterostructure G a P / I η 〇 5 (G a 1 -XA 1 X) 〇 5P, it is necessary to take care of this. A p-type I ny &lt; ^ 8b / 1} () b / supercrystal 43 with a composition with gradient changes of I η and A 1 is used to adjust the difference in lattice constants between Ga and InGaAlP. As a part of the claim of the present invention, the composition of I η and A 1 (X and y) changes in gradient in I ny (Ga 〖_XA 1 x) 丨 -yP substrate supercrystalline structure 4 3 7, and the thickness is Between 0 and 100 and 300 nm, the growth rate is between about 0.05 and 0.2 m / hour, and there is a high V / III family ratio greater than about 100. 11 ^ (0 &amp; 1_, 1? () 1_ / substrate gradient layer 43 7 remains 2 to 4 times larger than P-type I η 0.5 (Ga 丨 —χΑ 1 x) 〇5P coating layer 4 3 5 Impurity concentration. The above descriptions are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention are It should be included in the scope of patent application described below.

480751 The drawing briefly illustrates the cross-sectional schematic diagram of a conventional light-emitting diode of the first embodiment of the present invention; the cross-sectional schematic diagram of the light-emitting diode of the first embodiment of the present invention; the cross-sectional schematic diagram of the light-emitting diode of the second embodiment of the present invention; A schematic cross-sectional view of a light emitting diode according to a third embodiment of the present invention. Representative symbols of main parts: .101 η-type G a A s substrate 102 η-type InGaAlP cladding layer 103 active layer 104 p-type InGaAlP cladding layer 105 p-type GaP current diffusion layer 1 0 6 top metal contact 1 0 7 bottom layer Metal contact 2 0 8 η-type G a A s beveled substrate 2 0 9 η-type G a A s buffer layer 2 10 η-type dispersed Bragg reflector 211 η-type InGaAlP cladding layer 212 multiple quantum wells 213 p-type InGaAlP Cladding layer 214 p -type I η ◦ 5 (G a 1 -XA 1 X) ◦ 5P current drug plug layer 215 ρ-type GaP, AlGaP, or AlGaAs current diffusion layer

480751 Schematic illustration of 213 p-type InGaAlP cladding layer 214 P -type I η 0.5 (G a _χΑ 1 X) 〇 5P current blocking layer 215 p -type G a P, A 1 G a P, or A 1 G a A s current diffusion layer 216 top metal contact 2 1 7 bottom metal contact 318 η-type G a A s beveled substrate 319 η-type G a A s buffer layer 3 2 0 η-type dispersed Bragg reflector 321 η Type InGaAlP cladding layer 3 2 2 Multi-quantum well 3 2 3 Electron reflection layer 3 2 4 p Type InGaAlP cladding layer 3 2 5 p -type I η 0.5 (Gab XA 1 x) 〇5P current drop to the base layer 3 2 6 p-type G a P, A 1 G a P, or A 1 G a A s current diffusion layer 3 2 7 top metal contact 3 2 8 bottom metal contact 4 2 9 η type G a A s beveled bottom 4 3 0 η-type G a A s buffer layer 4 31 η-type dispersed Bragg reflective layer 4 3 2 η-type InGaAlP cladding layer 4 3 3 multiple quantum wells 434 electron reflection layer 4 3 5 ρ-type InGaAlP cladding layer 4 3 6 ρ-type Ino.JGahAl x) 〇5P current blocking layer

Page 29 480751 Brief description of the diagram 437 p—Iny (Gabu XA 1 x) Bu / lattice gradient layer 438 p-type GaP, AlGaP, or AlGaAs current diffusion layer 4 3 9 Top metal contact 4 4 0 Bottom metal contact

Page 30

Claims (1)

480751 VI. Application patent scope 1. A light emitting diode includes at least: a metal contact base; a first conductive GaAs substrate on the metal contact base, the substrate is inclined along &lt; 1 1 1 &gt; A angle Cut, the chamfered angle is greater than 10. ; A first conductivity type I n G a A 1 P layer is located on the substrate; an active layer is located above the first conductivity type InGaAl P layer, the active layer has no atomic order; a second conductivity type InGaAl P layer Located on the active layer, its electrical property is opposite to that of the first conductive InGaAl P layer; a window layer is located on the second conductive InGaAl P layer; and a metal contact top seat is located on the window layer. 2. For example, the light-emitting diode of item 1 of the patent application scope further includes a GaAs buffer layer between the substrate and the first conductive InGaA1P layer. 3. If the light-emitting diode of item 2 of the patent application scope, the thickness of the buffer layer is between 0.2 and 0.5 // m. 4. If the light-emitting diode of item 1 of the patent application scope further includes a light reflecting layer on the substrate, the impurity concentration of the light reflecting layer is greater than 2 * 1 0 17 / cm 2 5. The light-emitting diode of item 4, the light reflection layer has a reflection wavelength α close to the wavelength of the active region (α -5nm or α Page 31 480751 VI. Patent application scope + 5 n m) and the carrier electrical properties are the same as this substrate. 6. If the light-emitting diode of item 4 of the patent application scope, the light reflecting layer is selected from the group consisting of AlAs / AlxlGa bXlA s-substrate (xl-0.5), I η 0.5 (Ga! _X2A 1 x2) 〇.5P-substrate (x2g 0.1) and the super-lattice structure of the substrate of the tribal group substrate. 7. If the light-emitting diode of item 6 of the patent application, the composition of the aluminum X1 and x2 at the wavelength of the emitted light is greater than 630 nm, xl is less than 0.6 and x2 is greater than 0.1; at the wavelength of the emitted light is greater than 590nm X1 is less than 0.7 and x2 is greater than 0.2; at the wavelength of the emitted light is greater than 570nm, x1 is less than 0.8 and X2 is greater than 0.3. 8. If the light-emitting diode of item 6 of the patent application scope, the light reflecting layer is selected from the group consisting of A 1 As / A 1 xGa 丨 -χΑs-substrate I η 0.5 (Ga B / 1 X) 〇 5P-substrate, and AlAs / In〇5 (Gai-XA 1 x) 〇5P_ group of supercrystalline structure composed of 'the supercrystalline structure of each layer and the difference between the reflection coefficient will not be less than 0. 1 5 . 9. If the light-emitting diode of item 4 of the patent application scope, the lattice mismatch between the light reflecting layer and the substrate is less than 0.3%. 1. If the light-emitting diode of the first range of the patent application, the first conductivity type I n G a A 1 P layer has a doping concentration of 0 · 4 * 1 0 18 / cm to 1 * 1 0 18 / cm between. 1 1. If the light-emitting diode of item 10 in the scope of patent application, the doped profile to Page 32 480751 Six, the scope of the patent application contains a low / high impurity concentration ratio from 0.1 to 0.5 between. 1 2. As the light-emitting diode of item 1 of the patent application scope, the active layer contains at least a strained I ny (Ga bXlA 1 xl) hP / I η 0.5 (Ga bdA 1 x 2) Q.5P multiple quantum 2% 至 0. 6 Well structure, the multiple quantum well structure has an Iny (Gai_xlAl xl)! _ / &Lt; 00 1 &gt; The lattice constant is larger than the lattice constant of the chamfered substrate GaAs &lt; 001〉 0.2% to 0.6 %between. 13. According to the light-emitting diode of item 12 in the scope of the patent application, the thickness ratio between the strained multi-layer sub-well layer and the layer is between 0.75 and 1.2.5. 1 4. The light-emitting diode according to item 1 of the scope of patent application, further comprising an electron reflection layer, which has an I η 0.5A 1 〇5P plug layer on the active layer, the thickness of the plug layer is 20- Between 40 nm. 1 5. According to the light-emitting diode of item 14 in the scope of patent application, the electron reflection layer includes at least In〇5 (Ga 卜 XA 1 x) 〇5P / I η 〇 0.5A 1 〇. 5P supercrystalline structure is inserted in Between the active region and the second InGaAlP layer. 16. If the light-emitting diode according to item 14 of the scope of patent application, the electron reflection layer is selected from a combination of fixed, stepped and gradient-growing layers, and each layer has a thickness of about 2-5 nm. 17. If the light-emitting diode of item 4 of the patent application, the first InGaAlP 480751 6. Scope of patent application There is a gradient change in the layer, and the gradient change profile ranges from 0.4 * 1018 / cm to 1 * 1018 / cm. 1 至 0. 5 之间。 1 8. As claimed in the scope of patent claims No. 17 of the light-emitting diodes, the gradient profile also includes a low / high impurity concentration ratio between 0.1 to 0.5. 19. If the light-emitting diode of item 18 of the scope of patent application, the active region contains at least one strain (strai η) I ny (Ga bXlA 1 xl) by P / I η 0.5 (Ga H2A 1 x2) 〇 .5P multiple quantum wells, the Iny (GaLXlAl xl) 丨 —yP well has a &lt; 001> lattice constant greater than the lattice constant of the chamfered GaAs substrate is about 0.2% to 0.6% between. 20. If the light-emitting diode of item 19 in the scope of the patent application, the thickness ratio between the strained (s tr ain d) multiple quantum well layer and the layer is between about 0.75 and 1.25. 2 1. The light-emitting diode according to item 19 of the scope of patent application, further comprising an electron reflection layer, the electron reflection layer has an I η 0.5A 1 0.5P layer on the active layer, and the thickness of the plug layer About 20 to 40nm. 2 2. If the light-emitting diode according to item 21 of the patent application scope, the electron reflection layer contains at least I η 0.5 (Gab / 1 x) G.5P / I η 0.5A 1 G.5P supercrystal The structure is interposed between the active layer and the second InGaAlP layer. Page 34 480751 VI. Application scope of patent 23. For the light-emitting diode of the scope of application patent No. 21, the electron reflection layer is selected from the group consisting of fixed, step and gradient growth layers, each layer The thickness is between about 2-5nm. 24. As the light-emitting diode of item 21 of the scope of application for patent, the light-emitting diode is grown in a reaction chamber at a temperature of less than 750 ° C using an organometallic vapor phase worm crystal method. 2 5. A light-emitting diode includes at least: a metal contact base; a first conductive GaAs substrate on the metal contact base 'the substrate is obliquely cut along the &lt; 1 1 1 &gt; A angle, the oblique The cutting angle is greater than 10. A light reflecting layer is located on the substrate; the doped concentration of the light reflecting layer is greater than 2 * 1017 / cm2; a first conductivity type InGa A IP layer is located above the light reflection layer, and the first conductivity type InGaAlP layer There is a doping concentration between 0.4 * 10 18 / cm2 and 1 * 10 18 / cm; an active layer is located above the first conductive InGa A 1P layer, and the active layer contains at least a strain I η γ (Ga i_xlA 1 xl) i-yP / I η ◦ 5 (Ga x 2A 1 x2) 0.5 weight sub-well, the In ^ Ga ^ Al xl) x / well has a &lt; 001> lattice constant greater than the oblique cut The lattice constant of the GaAs substrate is between 0.2% and 0.6%; an electron reflection layer has an I η 0.5A 1 〇. Plug layer on the active layer, and the thickness of the Messer layer is about Between 20 and 40 II in; a second conductivity type InGaA1P layer is located on the electron reflection layer, and Page 35 480751 6. Scope of patent application Electrical properties are opposite to the first conductivity type InGaAlP layer; a window layer is located above the second conductivity type InGaAlP layer; and a metal contact top seat is located above the window layer. 2 6. The light-emitting diode according to item 25 of the patent application scope, further comprising a GaAs buffer layer on the substrate and the first I n G a A 1 P layer. 27. If the light emitting diode of item 26 of the patent application scope, the thickness of the buffer layer is between 0.2 and 0.5 // m. 28. If the light-emitting diode of item 25 of the patent application scope, the light reflection layer has a reflection wavelength α close to the wavelength of the active layer / 5 such that (a = / 3 -5nm or a = / 3 + 5nm), Its carrier has the same electrical conductivity as the active layer. 29. If the light-emitting diode of item 25 of the patent application scope, the light reflecting layer is selected from the group consisting of AlAs / AlxlGa xlAs-substrate (xlg 0.5), In 0.5 (Ga x2A 1 x2) 〇 · 5P-Substrate (x 2-0 · 1), and A 1 A s / I η 0.5 (G a bu x2A 1 x2) G. 5P-group of superstructure of the substrate. 30. If the light-emitting diode of item 29 of the patent application scope, the aluminum molecular composition xl and x2, when the wavelength is greater than 630nm, X1 is less than 0.6 and x2 is greater than 0_1; when the wavelength is greater than 590nm, xl is less than 0.7 and X 2 is larger than 0.2; when the wavelength is larger than 570 nm, X 1 is smaller than 0.8 and X 2 is larger than 0.3. 480751 VI. Scope of patent application 31. The light-emitting diode according to item 29 of the scope of patent application, the light reflecting layer is selected from the substrate consisting of AlAs / Al / ahAs-base d, I η 0.5 (G a Bu XA 1 X) ο. 5P-substrate, and AlAs / In〇5 (Gai-xAl x) Q 5P_ group of substrates composed of the supercrystalline structure, the reflection coefficient difference of each layer is not less than 0.1 5. 3 2。 As claimed in the scope of application of the light-emitting diodes 25, the light reflecting layer and the substrate lattice mismatch degree is less than 0.3%. 3 至 3. If the light-emitting diode of the 25th item of the scope of patent application, the doped profile further includes a thickness ratio of low / high doped concentration between 0.1 to 0.5. 34. If the light emitting diode of item 25 of the patent application scope, the strained multi-quantum well thickness ratio is between about 0.75 and 1.25. 35. If the light-emitting diode of item 25 of the patent application scope, the electron reflection layer contains at least 1] 1.5 (631- ^ 1 \). .5? / 111. 5 August 1. .5? A supercrystalline structure is interposed between the active layer and the second InGaAlP layer. 36. If the light-emitting diode of item 25 of the patent application scope, the electron reflection layer at least comprises a fixed, stepped and gradient-varying thickness, and each layer has a thickness of about 2 to 5 nm. 37. If the light-emitting diode of item 25 of the patent application scope, the light-emitting diode Page 37 480751 VI. Scope of patent application 疋 In a reaction chamber (under 70 ° C), an organic metal vapor phase epitaxy method should be used to grow on the substrate. ~ 3 8 · A light-emitting diode includes at least: a metal contact base; a first conductive GaAs substrate on the metal contact base; a buffer layer on the first conductive GaAs substrate; A first conductivity type InGaAlP layer is located on the substrate; an active layer is located above the first conductivity type InGaAlp layer; a second conductivity type InGaAlP layer is located above the active layer, and its electrical property is opposite to that of the first conductivity type InGaAlP layer A light extraction layer is located on the second conductive type InGaAlP layer, the light extraction layer is used to block and spread the light emitted by the second conductive type InGaAlP layer; and a metal contact top seat is located on the second conductive type InGaAlP layer; Above the window level. 39. If the light-emitting diode of item 38 of the patent application scope, the substrate is chamfered along &lt; m> A angle &apos; The chamfered angle is greater than 10. . 40. If the light-emitting diode of item 38 of the scope of the patent application, the light extraction layer includes at least: an electrical base layer on the second I ngaa 1 p layer, and the current blocking layer at least One is the same conductivity as the second conductivity type. 5 (Gai χΑΐχ). 5p layer, the thickness of the current congestion layer is 10% 1Q () nm; Page 38 480751 VI. Patent application scope A gradient layer is located on the current blocking layer to alleviate the difference in lattice constant between the current blocking layer and the layer above it; and a window layer is positioned on the gradient layer as a current distribution Function. 4 1. A light-emitting diode includes at least: a metal contact base; a first conductive GaAs substrate on the metal contact base, the substrate is beveled along an angle &lt; 1 1 1 &gt; A, the bevel cut The angle is greater than 10. A first conductivity type InGaAl P layer is located on the substrate; an active layer is located above the first conductivity type InGaAl P layer; a second conductivity type InGaAl P layer is located above the active layer; A conductive InGaAl P layer is opposite; a light extraction layer is located on the second conductive InGaAl P layer, the light extraction layer is used to block the current in the growth direction and spread light; and a metal contact top seat is located The light extraction layer is above. 4 2. According to the light emitting diode of item 41 in the patent application scope, the light extraction layer includes at least: a current blocking layer on the second InG a A 1P layer, the current blocking layer includes at least one and a second conductive layer Ino./Ga^Al x) G.5P layer of the same type, the thickness of the current blocking layer is 10-100 nm; a gradient layer is located on the current blocking layer to relax the current blocking layer and then Difference in lattice constants of a layer; i — &Gt; f ρτι --_ νϋί—ΙΗ- 480751 VI. Scope of patent application A window layer is located above the gradient layer for the function of current distribution. 4 3. If the light-emitting diode of item 42 of the patent application scope, the current blocking layer includes at least a second conductive 111 (). 5 (〇31_, 1〇 (). 丨 -layer, the second The doped density of the conductive I n G.5 (Ga hA 1 x) G.5P-layer is approximately 2 to 4 times higher than the doped density of the first I n G a A 1 P layer. 4 4. 如The light emitting diode of the scope of application for a patent No. 42, I η 0.5 (Ga i_xA 1 x) 〇5P This molecular conductivity composition of the second conductivity type current plugging layer is between 0.1 to 0.5 4 5. If the light emitting diode of item 42 of the patent application scope, the energy level of the light extraction layer (including the three layers) is higher than that of the active region. 4 6. In the light emitting diode of item 2, the gradient layer has a doping concentration between the window layer and the second conductive congestion layer. 4 7. For the light emitting diode of item 4 in the patent application scope, the window layer There is a stepwise or gradient change in the impurity concentration between 2 * 1 0 18 / cm to 8 * 10 18 / cm. 4 8. If the light-emitting diode of the scope of patent application No. 47 is applied, the window layer Near the window / cladding interface The concentration of impurity doping concentration than away from the window layer / cladding layer interface to low. 480751 VI. Application scope of patent 4 9. For example, the light-emitting diode of item 42 of the scope of patent application, the light-emitting diode is an organic metal vapor phase epitaxy method in a reaction chamber at a temperature lower than the Celsius temperature 7 5 0 Growth. 5 0. A light-emitting diode includes at least: a metal contact base; a first conductive GaAs substrate on the metal contact base, the substrate is obliquely cut along an angle of &lt; 1 1 1 &gt; A, the oblique cut The angle is greater than 10. A light reflecting layer on the substrate; a first conductive InGaAl P layer on the light reflecting layer; an active layer on the first conductive InGaAl P layer, the active layer including at least a strain Iny ( Ga BU χιΑ 1 χι) Bu yP / I η 0.5 (G a ηζΑ 1 X2) 0.5 weight sub-well, the In / Ga ^ Al xl) Bu / well has a &lt; 001> lattice constant greater than the The lattice constant of the beveled GaAs substrate is between 0.2% and 0.6%; an I η γ (G a! _XlA 1 xl) yP electron reflection layer is on the active layer, and the electron reflection layer There is an I n Q. 5A 1 Q. 5P congestion layer, the thickness of the congestion layer is between 20 and 40 nm; a second conductivity type InGaAl P layer is located on the electron reflection layer, and its electrical conductivity is the same as the first conductivity. The InGaAl P layer is opposite; a light extraction layer is located on the second conductive InGaAl P layer, the light extraction layer is used to block the current in the growth direction and spread the light; and a metal contact top seat is located on the Light extraction layer above. Page 41 480751 VI. Application for patent scope 51. For example, the light-emitting diode 50 for the scope of patent application, the light-emitting diode is an organic metal vapor phase stupid method in a reaction chamber at a temperature of less than 7 5 0 Grow at Celsius. 5 2. According to the light emitting diode of claim 50 in the scope of patent application, the light extraction layer includes at least: a current t plug layer on the second I n G a A 1 P layer, and the current pinch The layer includes a 111 (). 5 (〇81_, 1 丄 .5? Layer having the same conductivity as the second conductivity type, and the thickness of the current blocking layer is 10-100 nm; a gradient layer is located above the current blocking layer; and a window The layer is located on the gradient layer. 5 3. As the light-emitting diode of the 50th scope of the patent application, it further includes a light reflecting layer on the substrate, and the impurity concentration of the light reflecting layer is greater than 2 * 1 0 17 / cm 2 05. If the light-emitting diode of the 50th patent application scope, the light reflecting layer has a reflection wavelength α close to the wavelength of the active region / 3 (α -5 nm or a = / 3 +5 nm ) And its electrical property is the same as that of the substrate. 5 5. As the light-emitting diode of the 50th scope of the patent application, the light reflecting layer is selected from the group consisting of AlAs / AlxlGa bXlA s-substrate (X 12 0 · 5), I η 0.5 (Ga x 2A 1 x 2) 0.5? -Substrate &lt; ^ 2-0.1) and one person 3/111 (). 5 (〇31_ ^ 1: (2) 0.5 ? -The bottom of the ethnic group 480751 VI. Scope of patent application Composed of superlattice structure of materials. 56. According to the light-emitting diode of claim 55, the aluminum molecular composition xl and x2, when the wavelength is greater than 630 nm, X 1 is less than 0.6 and X 2 is greater than 0.1; when the wavelength is greater than 590 nm, X 1 is less than 0.7 and X 2 is greater than 0.2; when the wavelength is greater than 570 nm, xl is less than 0.8 and X 2 is greater than 0.3. 57. If the light-emitting diode of item 50 of the scope of patent application, the light reflecting layer is selected from a substrate consisting of A 1 A s / A 1 xGa bXA s -bas ed, I η 0.5 (Ga XA 1 x) 〇5P-substrate and A 1 As / I n G.5 (Ga i_xA 1 x) o.5P- group substrate structure, the reflection coefficient difference of each layer is not less than 0 . 1 5. 58. If the light emitting diode of item 50 in the scope of patent application, the degree of lattice mismatch between the light reflecting layer and the substrate is less than 0.3%. 5 9. If the light-emitting diode of the 50th item of the scope of the patent application, the first InGaA 1 P layer has a gradient change in the doping process, the gradient change profile from 0.4 * 1 0 18 / cm ^ 4 l * 1018 / cm? ^. 60. If the light emitting diode of item 50 in the patent application scope, the light extraction layer includes at least: a current Messer layer on the second InGaAl P layer, the current Messer layer includes a and 111 (). 5 (〇31_, 1》 {). 5? Layer of the second conductivity type, the thickness of the current blocking layer is 10-100nm; Page 43 480751 6. Application scope: a gradient layer is located on the current blocking layer to alleviate the difference in lattice constant between the current blocking layer and the next layer; and a window layer is positioned on the gradient layer as a current distribution. Function. 6 1. If the light-emitting diode of item 60 of the scope of patent application, the current blocking layer includes at least a second conductive 111 {). 5 (〇81_ / 1〇 (). 5? -Layer, the first The doped density of the two-conducting Ino./Ga^Al x) G.5P-layer is approximately 2-4 times higher than that of the first I n G a A 1 P layer. 62. If the light-emitting diode of item 60 of the scope of patent application, the second conductive type current blocking layer has I η 0.5 (Ga i_xA 1 x) 0.5 P. The molecular composition X is between 0 · Between 1 and 0.5. 63. The energy level of the current blocking layer is higher than the energy level of the active region, such as the light emitting diode of item 60 in the scope of patent application. 64. If the light-emitting diode of item 60 of the patent application scope, the gradient layer has a doping concentration between the window layer and the second conductive plug layer. 65. If the light emitting diode of item 60 of the scope of patent application, the window layer has a stepwise or gradient change between 2 * 10 18 / cm to 8 * 10 18 / cm. 6 6. If the light emitting diode of item 60 of the scope of the patent application, the window layer is closer to the window layer / coating layer interface than the impurity concentration ratio of the window layer to the window layer / coating layer. 480751 VI. The scope of patent application The impurity concentration at the interface is low liii page 45