CN113193088A - Infrared light-emitting diode epitaxial wafer and preparation method thereof - Google Patents
Infrared light-emitting diode epitaxial wafer and preparation method thereof Download PDFInfo
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- CN113193088A CN113193088A CN202110258026.6A CN202110258026A CN113193088A CN 113193088 A CN113193088 A CN 113193088A CN 202110258026 A CN202110258026 A CN 202110258026A CN 113193088 A CN113193088 A CN 113193088A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 95
- 230000007480 spreading Effects 0.000 claims abstract description 46
- 238000003892 spreading Methods 0.000 claims abstract description 46
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052799 carbon Inorganic materials 0.000 claims description 19
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 230000007547 defect Effects 0.000 abstract description 20
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 230000000903 blocking effect Effects 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 20
- 230000007704 transition Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
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Abstract
The disclosure provides an infrared light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the field of light-emitting diode manufacturing. After the P-type AlGaAs current spreading layer in the infrared light emitting diode epitaxial wafer is grown, a P-type GaAsP ohmic contact layer is directly grown on the P-type AlGaAs current spreading layer. The lattice mismatch between the P-type GaAsP ohmic contact layer and the P-type AlGaAs current expansion layer is very small, good growth on the P-type AlGaAs current expansion layer can be realized, the defects in the P-type GaAsP ohmic contact layer are less, the current blocking effect is less, and the overall resistance is relatively low. The finally obtained infrared light-emitting diode has small heat generated by the infrared light-emitting diode even if the infrared light-emitting diode is used under the condition of large current, reduces the influence of heating on parts in the infrared light-emitting diode and prolongs the service life of the infrared light-emitting diode.
Description
Technical Field
The disclosure relates to the field of light emitting diode manufacturing, and in particular relates to an infrared light emitting diode epitaxial wafer and a preparation method thereof.
Background
The infrared light emitting diode is an important light source device and is widely applied to remote control, vehicle sensing, closed circuit television and the like, and the infrared light emitting diode epitaxial wafer is a basic structure for preparing the infrared light emitting diode. An infrared light emitting diode epitaxial wafer generally includes a substrate, and an n-type GaInP etch stop layer, an n-type GaAs ohmic contact layer, an n-type AlGaAs current spreading layer, an n-type AlGaAs confinement layer, a light emitting layer, a p-type AlGaAs confinement layer, a p-type AlGaAs current spreading layer, a p-type AlGaInP transition layer, and a p-type GaP ohmic contact layer which are sequentially stacked on the substrate.
Due to the fact that the lattice mismatch degree between the GaP material and the AlGaAs material is large, the effect of the p-type AlGaInP transition layer for relieving the lattice mismatch is small, internal defects of the p-type AlGaInP transition layer and the p-type GaP ohmic contact layer behind the p-type AlGaAs transition layer are more, and the bulk resistance is high. When the infrared light emitting diode with high body resistance is used under the condition of heavy current, larger heat productivity can be generated, the use of some internal parts of the infrared light emitting diode is influenced, and the service life of the infrared light emitting diode is influenced.
Disclosure of Invention
The embodiment of the disclosure provides an infrared light emitting diode epitaxial wafer and a preparation method thereof, which can reduce the internal resistance of a light emitting layer and prolong the service life of an infrared light emitting diode. The technical scheme is as follows:
the embodiment of the disclosure provides an infrared light-emitting diode epitaxial wafer, which comprises a substrate, and an n-type GaInP corrosion stop layer, an n-type GaAs ohmic contact layer, an n-type AlGaAs current expansion layer, an n-type AlGaAs limiting layer, a light-emitting layer, a p-type AlGaAs limiting layer, a p-type AlGaAs current expansion layer and a p-type GaAsP ohmic contact layer which are sequentially stacked on the substrate.
Optionally, the thickness of the p-type GaAsP ohmic contact layer is 55nm to 120 nm.
Optionally, the p-type doping element in the p-type GaAsP ohmic contact layer is carbon.
Optionally, the P-type GaAsP ohmic contact layer comprises a graded sub-layer and a matching sub-layer which are sequentially laminated on the P-type AlGaAs current spreading layer, and the P component in the graded sub-layer rises along the growth direction of the graded sub-layer; the P composition in the matching sublayer is unchanged.
Optionally, the P component in the gradient sublayer is graded from 0.05 to y, where 0.15 ≦ y ≦ 0.3; the P component in the matching sub-layer is greater than or equal to 0.15, and the P component in the matching sub-layer is less than or equal to 0.3.
Optionally, the P-component in the matching sub-layer is equal to the maximum value of the P-component in the graded sub-layer.
Optionally, the thickness of the graded sub-layer and the thickness of the matching sub-layer are respectively 5-20 nm and 50-100 nm.
Optionally, the concentration of the carbon element doped in the graded sub-layer and the concentration of the carbon element doped in the matching sub-layer are respectively 1-3E 18 and 3E 19-5E 20.
The embodiment of the disclosure provides a preparation method of an infrared light-emitting diode epitaxial wafer, which comprises the following steps:
providing a substrate;
growing an n-type GaInP corrosion stop layer on the substrate;
growing an n-type GaAs ohmic contact layer on the n-type GaInP corrosion stop layer;
growing an n-type AlGaAs current expansion layer on the n-type GaAs ohmic contact layer;
growing an n-type AlGaAs confinement layer on the n-type AlGaAs current spreading layer;
growing a light emitting layer on the n-type AlGaAs confinement layer;
growing a p-type AlGaAs confinement layer on the light-emitting layer;
growing a p-type AlGaAs current spreading layer on the p-type AlGaAs confinement layer;
and growing a p-type GaAsP ohmic contact layer on the p-type AlGaAs current expansion layer.
Optionally, the growing a p-type GaAsP ohmic contact layer on the p-type AlGaAs current spreading layer includes:
growing a graded sublayer on the p-type AlGaAs confinement layer;
and growing a matching sub-layer on the gradient sub-layer, wherein the gradient sub-layer and the matching sub-layer are both made of GaAsP, and the growth temperature of the matching sub-layer is lower than that of the gradient sub-layer.
The beneficial effects brought by the technical scheme provided by the embodiment of the disclosure at least comprise:
after the p-type AlGaAs current spreading layer in the infrared light emitting diode epitaxial wafer is grown, a p-type GaAsP ohmic contact layer is directly grown on the p-type AlGaAs current spreading layer. The lattice mismatch between the P-type GaAsP ohmic contact layer and the P-type AlGaAs current expansion layer is very small, good growth on the P-type AlGaAs current expansion layer can be realized, and the defects in the P-type GaAsP ohmic contact layer are less. The P atoms in the P-type GaAsP ohmic contact layer can fill part of vacancy defects due to smaller atomic radius, and the defects in the P-type GaAsP ohmic contact layer are reduced. The reduction of defects can reduce the probability of capturing electrons by the defects, ensure the stable flow of the electrons, and relatively lower the overall bulk resistance. The finally obtained infrared light-emitting diode has small heat generated by the infrared light-emitting diode even if the infrared light-emitting diode is used under the condition of large current, reduces the influence of heating on parts in the infrared light-emitting diode and prolongs the service life of the infrared light-emitting diode.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an infrared light emitting diode epitaxial wafer according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of another infrared light emitting diode epitaxial wafer according to an embodiment of the present disclosure;
fig. 3 is a flowchart of a method for manufacturing an infrared light emitting diode epitaxial wafer according to an embodiment of the present disclosure;
fig. 4 is a flowchart of another method for manufacturing an infrared light emitting diode epitaxial wafer according to an embodiment of the present disclosure.
Detailed Description
To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," "third," and similar terms in the description and claims of the present disclosure are not intended to indicate any order, quantity, or importance, but rather are used to distinguish one element from another. Also, the use of the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprise" or "comprises", and the like, means that the element or item listed before "comprises" or "comprising" covers the element or item listed after "comprising" or "comprises" and its equivalents, and does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", "top", "bottom", and the like are used merely to indicate relative positional relationships, which may also change accordingly when the absolute position of the object being described changes.
Fig. 1 is a schematic structural diagram of an infrared light emitting diode epitaxial wafer according to an embodiment of the present disclosure, and as can be seen from fig. 1, an infrared light emitting diode epitaxial wafer according to an embodiment of the present disclosure includes a substrate 1, and an n-type GaInP corrosion stop layer 2, an n-type GaAs ohmic contact layer 3, an n-type AlGaAs current spreading layer 4, an n-type AlGaAs confinement layer 5, a light emitting layer 6, a p-type AlGaAs confinement layer 7, a p-type AlGaAs current spreading layer 8, and a p-type GaAsP ohmic contact layer 9 sequentially stacked on the substrate 1.
After the P-type AlGaAs current spreading layer 8 in the infrared light emitting diode epitaxial wafer is grown, a P-type GaAsP ohmic contact layer 9 is directly grown on the P-type AlGaAs current spreading layer 8. The lattice mismatch between the P-type GaAsP ohmic contact layer 9 and the P-type AlGaAs current spreading layer 8 is very small, good growth on the P-type AlGaAs current spreading layer 8 can be achieved, and it is ensured that defects in the P-type GaAsP ohmic contact layer 9 are few. The P atoms in the P-type GaAsP ohmic contact layer 9 can fill part of vacancy defects due to small atomic radius, and defects existing in the P-type GaAsP ohmic contact layer 9 are reduced. The reduction of defects can reduce the probability of capturing electrons by the defects, ensure the stable flow of the electrons, and relatively lower the overall bulk resistance. The finally obtained infrared light-emitting diode has small heat generated by the infrared light-emitting diode even if the infrared light-emitting diode is used under the condition of large current, reduces the influence of heating on parts in the infrared light-emitting diode and prolongs the service life of the infrared light-emitting diode.
And the p-type GaAsP ohmic contact layer 9 is used for being in direct contact with the p electrode, the quality of the p-type GaAsP ohmic contact layer 9 is good, good connection between the p electrode and the p-type GaAsP ohmic contact layer 9 can be ensured, the luminous efficiency is ensured, and the unstable connection between the p electrode and the ohmic contact layer caused by the fact that the ohmic contact layer is warped due to excessive defects is reduced. Moreover, the P-type GaAsP ohmic contact layer 9 directly replaces the P-type AlGaInP transition layer and the P-type GaP ohmic contact layer in the prior art, and the cost required for preparing the infrared light emitting diode epitaxial wafer can be reduced to a certain extent. The p-type GaAsP ohmic contact layer 9 itself has a narrow forbidden band width, and can also reduce the bulk resistance to a certain extent.
Optionally, the thickness of the p-type GaAsP ohmic contact layer 9 is 55nm to 120 nm.
When the thickness of the p-type GaAsP ohmic contact layer 9 is within the above range, the obtained p-type GaAsP ohmic contact layer 9 can be guaranteed to have good crystal quality, and the thickness of the p-type GaAsP ohmic contact layer 9 is enough to support the p-type GaAsP ohmic contact layer 9 for preparing a p-electrode. The quality of the p-type GaAsP ohmic contact layer 9 and the preparation effect of the p electrode can be ensured, and meanwhile, the preparation cost of the infrared light-emitting diode epitaxial wafer is reasonably controlled.
Illustratively, the p-type doping element in the p-type GaAsP ohmic contact layer 9 is carbon.
The p-type doping element in the p-type GaAsP ohmic contact layer 9 is carbon, and the crystal quality of the p-type GaAsP ohmic contact layer 9 can be guaranteed. The diffusion capability of carbon atoms is small, so compared with the prior art that Mg is doped in the p-type AlGaInP transition layer and the p-type GaP ohmic contact layer, the situation that Mg atoms which are easy to diffuse are prevented from diffusing to other layers to cause defects of other layers can be avoided. Further ensuring the crystal quality of the finally obtained infrared light-emitting diode.
Referring to fig. 1, the P-type GaAsP ohmic contact layer 9 may include a graded sub-layer 91 and a matching sub-layer 92 sequentially stacked on the P-type AlGaAs current spreading layer 8, a P component in the graded sub-layer 91 is raised along a growth direction of the graded sub-layer 91; the P composition in the matching sublayer 92 is unchanged.
In one implementation manner provided by the present disclosure, the P-type GaAsP ohmic contact layer 9 includes a graded sublayer 91 and a matching sublayer 92 stacked in sequence, and a P component in the graded sublayer 91 rises along a growth direction of the graded sublayer 91; the P composition in the matching sublayer 92 is unchanged. In this structure, the gradual increase of the P component in the graded sublayer 91 can make the lattice constant of the graded sublayer 91 change from being closer to the lattice constant of the P-type AlGaAs current spreading layer 8 to being in a state that the lattice constant of the P-type GaAsP ohmic contact layer 9 is relatively stable, thereby achieving a good transition effect. The P component in the matching sublayer 92 is unchanged, so that the matching sublayer 92 can be guaranteed to have good quality, and good connection between the matching sublayer 92 and the P electrode can be realized.
In one implementation provided by the present disclosure, the P-composition in graded sublayer 91 may increase linearly along the growth direction of graded sublayer 91. A graded sublayer 91 of better quality can be obtained. In other implementations provided by the present disclosure, the P-component in the graded sublayer 91 may also be raised stepwise along the growth direction of the graded sublayer 91. The present disclosure is not so limited.
Alternatively, the P composition in the gradient sublayer 91 is graded from 0.05 to y, where 0.15 ≦ y ≦ 0.3; the P component in the matching sublayer 92 is greater than or equal to 0.15 and the P component in the matching sublayer 92 is less than or equal to 0.3.
When the range of the P component in the graded sublayer 91 is within the above range, the graded sublayer 91 can be ensured to have good quality, and good connection with the P-type AlGaAs current spreading layer 6 can be achieved. When the P components in the graded sublayer 91 and the matching sublayer 92 are both in the range of 0.15 to 0.3, the forbidden bandwidth of the GaAsP material is 1.55 to 1.76ev, the corresponding absorbable wavelength range is 740 to 800nm, the overlapping area of the GaAsP material and infrared light waves is very small, the absorption of the P-type GaAsP ohmic contact layer 9 to infrared light can be greatly reduced, and the luminous efficiency of the finally obtained infrared light-emitting diode is greatly improved.
Optionally, the P composition in matching sublayer 92 is equal to the maximum value of the P composition in graded sublayer 91.
The maximum value of the P component in the matching sublayer 92 is equal to the maximum value of the P component in the graded sublayer 91, so that good contact and transition between the matching sublayer 92 and the graded sublayer 91 can be ensured, possible defects in the P-type GaAsP ohmic contact layer 9 are reduced, and the crystal quality of the finally obtained P-type GaAsP ohmic contact layer 9 is ensured.
Illustratively, the thickness of the graded sub-layer 91 and the thickness of the matching sub-layer 92 are 5 to 20nm and 50 to 100nm, respectively.
When the thickness of the graded sublayer 91 and the thickness of the matching sublayer 92 are within the range, the p-type GaAsP ohmic contact layer 9 with good quality can be obtained, and the crystal quality of the finally obtained infrared light emitting diode is guaranteed.
Optionally, the thickness of the graded sub-layer 91 is 5-20 nm.
The thickness of the gradient sublayer 91 is in the range, good transition from the p-type AlGaAs current expansion layer 8 to the GaAsP material in a stable state can be realized, the quality of the gradient sublayer 91 is good, and the gradient sublayer 91 in the thickness range can also be suitable for the p-type AlGaAs current expansion layer 8 with most of different thicknesses.
Optionally, the matching sub-layer 92 has a thickness of 50nm to 100 nm.
The thickness of the matching sublayer 92 is within this range, the quality of the matching sublayer 92 is good, and good transition and connection with the p-electrode can be achieved.
Illustratively, the concentration of the doped carbon element in the graded sublayer 91 and the concentration of the doped carbon element in the matching sublayer 92 are 1-3E 18 and 3E 19-5E 20, respectively.
When the ratio of the concentration of the carbon element doped in the graded sublayer 91 to the concentration of the carbon element doped in the matching sublayer 92 is within the above range, the graded sublayer 91 can realize a good transition from the p-type AlGaAs current spreading layer 8 to the p-type GaAsP ohmic contact layer, and the quality of the graded sublayer 91 itself is also good. The matching sublayer 92 may also achieve a good connection to the p-electrode. And the carbon elements in the gradient sublayer 91 and the matching sublayer 92 are distributed reasonably, so that good ohmic contact between the p-type ohmic contact layer and the p electrode can be formed, and the normal flow of current cannot be influenced due to too high resistance in the p-type ohmic contact layer.
Optionally, the doping concentration of carbon in the graded sub-layer 91 is 1-3E 18cm-3。
The doping concentration of carbon in the graded sublayer 91 is in the range, the carbon element in the graded sublayer 91 is distributed reasonably, and the quality of the graded sublayer 91 is good.
Optionally, the doping concentration of carbon in the matching sublayer 92 is 3E 19-5E 20cm-3。
The doping concentration of carbon in the matching sublayer 92 is within the range, the quality of the matching sublayer 92 is good, good ohmic contact between the p-type ohmic contact layer and the p electrode can be achieved, and the distribution of carbon elements in the matching sublayer 92 is reasonable.
Fig. 2 is a schematic structural diagram of another infrared light emitting diode epitaxial wafer according to an embodiment of the present disclosure, and referring to fig. 2, the infrared light emitting diode epitaxial wafer may include a substrate 1, and a GaAs buffer layer 10, an n-type GaInP etch stop layer 2, an n-type GaAs ohmic contact layer 3, an n-type AlGaAs current spreading layer 4, an n-type AlGaAs confinement layer 5, a light emitting layer 6, a p-type AlGaAs confinement layer 7, a p-type AlGaAs current spreading layer 8, and a p-type GaAsP ohmic contact layer 9 sequentially stacked on the substrate 1.
The structure of the p-type GaAsP ohmic contact layer 9 in fig. 2 is described in detail in the foregoing, and therefore, will not be described again here.
For ease of understanding, some of the hierarchy in the infrared light emitting diode epitaxial wafer is provided in detail below.
Optionally, the material of the substrate 1 is gallium arsenide. Is convenient for obtaining and preparing.
Illustratively, the GaAs buffer layer 10 may have a thickness of 150 to 300 nm. The obtained infrared light emitting diode epitaxial wafer has good quality.
Alternatively, the thickness of the n-type GaInP etch stop layer 2 may be 150-200 nm. The obtained infrared light emitting diode epitaxial wafer has good quality.
Illustratively, the thickness of the n-type GaAs ohmic contact layer 3 may be 60 to 90 nm. The obtained infrared light emitting diode epitaxial wafer has good quality.
Optionally, the thickness of the n-type AlGaAs current spreading layer 4 is 6-8 um. The obtained infrared light emitting diode epitaxial wafer has good quality.
Optionally, the thickness of the n-type AlGaAs confinement layer 5 is 250 to 350 nm. The obtained infrared light emitting diode epitaxial wafer has good quality.
Alternatively, the light emitting layer 6 includes a plurality of InGaAs well layers 61 and AlGaAs barrier layers 62 alternately grown in cycles.
The number of cycles of the light-emitting layer can be 3-15 pairs, and the number of cycles and the thickness of cycles are determined according to the wavelength, and the thickness is 90-240 nm. The obtained luminescent layer has good quality and good luminous efficiency.
Optionally, the thickness of the p-type AlGaAs confinement layer 7 is 350-450 nm. The obtained infrared light emitting diode epitaxial wafer has good quality.
Illustratively, the thickness of the p-type AlGaAs current spreading layer 8 is 1-3 um. The obtained infrared light emitting diode epitaxial wafer has good quality.
In the structure of the infrared light emitting diode epitaxial wafer in fig. 2, compared with the structure of the infrared light emitting diode shown in fig. 1, the GaAs buffer layer 10 is added between the substrate 1 and the n-type AlGaAs current expansion layer 4, so that lattice mismatch can be relieved, and the quality of the infrared light emitting diode epitaxial wafer can be further improved.
It should be noted that fig. 2 is only an example, and in other implementations provided by the present disclosure, the infrared light emitting diode may have other different hierarchical structures, which is not limited by the present disclosure.
Fig. 3 is a flowchart of a method for manufacturing an infrared light emitting diode epitaxial wafer according to an embodiment of the present disclosure, and referring to fig. 3, the method for manufacturing an infrared light emitting diode epitaxial wafer includes:
s101: a substrate is provided.
S102: and growing an n-type GaInP corrosion stop layer on the substrate.
S103: and growing an n-type GaAs ohmic contact layer on the n-type GaInP corrosion stop layer.
S104: an n-type AlGaAs current spreading layer is grown on the n-type GaAs ohmic contact layer.
S105: an n-type AlGaAs confinement layer is grown on the n-type AlGaAs current spreading layer.
S106: a light emitting layer is grown on the n-type AlGaAs confinement layer.
S107: a p-type AlGaAs confinement layer is grown on the light-emitting layer.
S108: a p-type AlGaAs current spreading layer is grown on the p-type AlGaAs confinement layer.
S109: and growing a p-type GaAsP ohmic contact layer on the p-type AlGaAs current spreading layer.
After the P-type AlGaAs current spreading layer in the infrared light emitting diode epitaxial wafer is grown, a P-type GaAsP ohmic contact layer is directly grown on the P-type AlGaAs current spreading layer. The lattice mismatch between the P-type GaAsP ohmic contact layer and the P-type AlGaAs current expansion layer is very small, good growth on the P-type AlGaAs current expansion layer can be realized, and the defects in the P-type GaAsP ohmic contact layer are less. The P atoms in the P-type GaAsP ohmic contact layer can fill part of vacancy defects due to smaller atomic radius, and the defects in the P-type GaAsP ohmic contact layer are reduced. The reduction of defects can reduce the probability of capturing electrons by the defects, ensure the stable flow of the electrons, and relatively lower the overall bulk resistance. The finally obtained infrared light-emitting diode has small heat generated by the infrared light-emitting diode even if the infrared light-emitting diode is used under the condition of large current, reduces the influence of heating on parts in the infrared light-emitting diode and prolongs the service life of the infrared light-emitting diode.
The structure of the infrared light emitting diode epitaxial wafer after the step S109 is performed can refer to fig. 1.
Fig. 4 is a flowchart of another method for manufacturing an infrared light emitting diode epitaxial wafer according to an embodiment of the present disclosure, and referring to fig. 4, the method for manufacturing an infrared light emitting diode epitaxial wafer includes:
s201: a substrate is provided.
In step S201, the material of the substrate may be gallium arsenide.
S202: a GaAs buffer layer is grown on the substrate.
Optionally, the growth conditions of the GaAs buffer layer include: the growth temperature is 650-670 ℃, the thickness is 150-300 nm, the V/III is 20-30, and the growth rate is 0.5-0.8 nm/s.
S203: and growing an n-type GaInP corrosion stop layer on the GaAs buffer layer.
Optionally, the growth conditions of the n-type GaInP etch stop layer include: the growth temperature is 650-670 ℃, the thickness is 150-200 nm, the V/III is 20-30, the growth rate is 0.4-0.6 nm/s, and the carrier concentration is 5-7 e 18.
S204: and growing an n-type GaAs ohmic contact layer on the n-type GaInP corrosion stop layer.
Illustratively, the n-type GaAs ohmic contact layer growth conditions include: the growth temperature is 650-670 ℃, the thickness is 60-90 nm, the V/III is 20-30, the growth rate is 0.4-0.6 nm/s, and the carrier concentration is 4-6 e 18.
S205: an n-type AlGaAs current spreading layer is grown on the GaAs buffer layer.
Alternatively, the n-type AlGaAs current spreading layer growth conditions include: the growth temperature is 670-680 ℃, the thickness is 6-8 um, the V/III is 40-50, the growth rate is 1.2-1.7nm/s, and the carrier concentration is 1-2 e 18.
S206: an n-type AlGaAs confinement layer is grown on the n-type AlGaAs current spreading layer.
Optionally, the n-type AlGaAs confinement layer growth conditions include: the growth temperature is 670-.
S207: a light emitting layer is formed on the n-type AlGaAs confinement layer.
Optionally, the growth conditions of the light emitting layer include: the growth temperature is 660-670 ℃, the thickness is 150-200 nm, the V/III is 20-30, and the growth rate is 0.4-0.6 nm/s. A light emitting layer with good quality can be obtained.
S208: a p-type AlGaAs confinement layer is grown on the light-emitting layer.
Alternatively, the p-type AlGaAs confinement layer growth conditions include: the growth temperature is 670-680 ℃, the thickness is 350-450 nm, the V/III is 40-50, the growth rate is 1.2-1.7nm/s, and the carrier concentration is 1-2 e 18.
S209: a p-type AlGaAs current spreading layer is grown on the p-type AlGaAs confinement layer.
Illustratively, the growth conditions of the p-type AlGaAs current spreading layer include: the growth temperature is 640-660 ℃, the thickness is 1-3 mu m, the V/III is 20-30, the growth rate is 1.0-1.5 nm/s, and the carrier concentration is 1-2E 18; the Al component is selected according to the wavelength, and is generally selected to be 0.1-0.3. The p-type AlGaAs current spreading layer with better quality can be obtained.
S210: and growing a p-type GaAsP ohmic contact layer on the p-type AlGaAs current spreading layer.
Step S210 may include: growing a gradient sublayer on the p-type AlGaAs current expansion layer; and growing a matching sub-layer on the gradient sub-layer, wherein the gradient sub-layer and the matching sub-layer are both made of GaAsP, and the growth temperature of the matching sub-layer is lower than that of the gradient sub-layer.
The growth temperature of the matching sub-layer is lower than that of the gradual change sub-layer, so that a certain stress can be released, the matching sub-layer with better quality can be obtained on the basis of the gradual change sub-layer, and good connection between the matching sub-layer and the p electrode is ensured.
Illustratively, the growth temperature of the gradual sub-layer is 680-700 degrees, and the growth temperature of the matching sub-layer is 600-620 degrees. The p-type GaAsP ohmic contact layer with better quality can be obtained.
Optionally, AsH can be introduced into the reaction chamber3、PH3And CBr4And sequentially reacting on the p-type AlGaAs current expansion layer to generate a gradient sublayer and a matching sublayer.
Illustratively, the AsH is introduced into the reaction chamber during the growth of the graded sublayer3At a flow rate of 200sccm, PH3The flow rate of (2) is increased linearly from 100 to 400 sccm. A graded sublayer of better quality can be obtained.
Illustratively, the AsH is introduced into the reaction chamber during the growth of the matching sublayer3At a flow rate of 200sccm，PH3The flow rate of (2) is 400 sccm. A matching sublayer of better quality can be obtained.
Although the present disclosure has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure.
Claims (10)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113793885A (en) * | 2021-08-27 | 2021-12-14 | 泉州三安半导体科技有限公司 | Infrared light-emitting diode epitaxial wafer, preparation method thereof and infrared light-emitting diode |
| CN114649453A (en) * | 2022-05-20 | 2022-06-21 | 南昌凯迅光电股份有限公司 | A high-brightness positive yellow-green LED epitaxial wafer and preparation method thereof |
| CN115132889A (en) * | 2022-07-27 | 2022-09-30 | 天津三安光电有限公司 | Light-emitting diodes and light-emitting devices |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113793885A (en) * | 2021-08-27 | 2021-12-14 | 泉州三安半导体科技有限公司 | Infrared light-emitting diode epitaxial wafer, preparation method thereof and infrared light-emitting diode |
| CN113793885B (en) * | 2021-08-27 | 2024-01-09 | 泉州三安半导体科技有限公司 | Infrared light-emitting diode epitaxial wafer, preparation method thereof and infrared light-emitting diode |
| CN114649453A (en) * | 2022-05-20 | 2022-06-21 | 南昌凯迅光电股份有限公司 | A high-brightness positive yellow-green LED epitaxial wafer and preparation method thereof |
| CN115132889A (en) * | 2022-07-27 | 2022-09-30 | 天津三安光电有限公司 | Light-emitting diodes and light-emitting devices |
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