CN109065675A - A kind of gallium nitride based LED epitaxial slice and its growing method - Google Patents

A kind of gallium nitride based LED epitaxial slice and its growing method Download PDF

Info

Publication number
CN109065675A
CN109065675A CN201810650541.7A CN201810650541A CN109065675A CN 109065675 A CN109065675 A CN 109065675A CN 201810650541 A CN201810650541 A CN 201810650541A CN 109065675 A CN109065675 A CN 109065675A
Authority
CN
China
Prior art keywords
layer
type
gallium nitride
low temperature
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810650541.7A
Other languages
Chinese (zh)
Other versions
CN109065675B (en
Inventor
程丁
韦春余
周飚
胡加辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HC Semitek Zhejiang Co Ltd
Original Assignee
HC Semitek Zhejiang Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HC Semitek Zhejiang Co Ltd filed Critical HC Semitek Zhejiang Co Ltd
Priority to CN201810650541.7A priority Critical patent/CN109065675B/en
Publication of CN109065675A publication Critical patent/CN109065675A/en
Application granted granted Critical
Publication of CN109065675B publication Critical patent/CN109065675B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure

Abstract

The invention discloses a kind of gallium nitride based LED epitaxial slice and its growing methods, belong to technical field of semiconductors.The gallium nitride based LED epitaxial slice includes substrate, buffer layer, N-type layer, active layer, low temperature P-type layer, electronic barrier layer and high temperature P-type layer, the buffer layer, the N-type layer, the active layer, the low temperature P-type layer, the electronic barrier layer and the high temperature P-type layer stack gradually over the substrate, the material of the low temperature P-type layer uses the aluminium gallium nitride alloy of p-type doping, and the material of the electronic barrier layer uses the aluminium indium gallium nitrogen layer of p-type doping.The present invention is by being changed to the aluminium gallium nitride alloy that p-type is adulterated for the material of low temperature P-type layer, potential barrier using aluminium component is higher, the barrier height of low temperature P-type layer is promoted, the material of electronic barrier layer is changed to the aluminium indium gallium nitrogen layer of p-type doping simultaneously, potential barrier using indium component is lower, the barrier height of electronic barrier layer is reduced, the luminous efficiency of LED is finally improved.

Description

A kind of gallium nitride based LED epitaxial slice and its growing method
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its growth Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous Subcomponent.Gallium nitride (GaN) has good thermal conductivity, while having the good characteristics such as high temperature resistant, acid and alkali-resistance, high rigidity, It is widely used in the light emitting diode of various wave bands.The core component of gallium nitride based light emitting diode is chip, and chip includes outer Prolong piece and the electrode that extension on piece is set.
Existing gallium nitride based LED epitaxial slice includes substrate, buffer layer, n type semiconductor layer, active layer and p-type Semiconductor layer, buffer layer, n type semiconductor layer, active layer and p type semiconductor layer stack gradually on substrate.P type semiconductor layer is used In providing the hole for carrying out recombination luminescence, n type semiconductor layer is used to provide the electronics for carrying out recombination luminescence, and active layer is for carrying out The radiation recombination of electrons and holes shines, and substrate is used to provide growing surface for epitaxial material；The material of substrate generally selects indigo plant Jewel, the material of n type semiconductor layer are the gallium nitride of n-type doping, and sapphire and gallium nitride are dissimilar materials, are existed between the two Biggish lattice mismatch, buffer layer are used to alleviate the lattice mismatch between substrate and n type semiconductor layer.
The electron amount that N-type semiconductor provides is much larger than the number of cavities of p type semiconductor layer, in addition the volume of electronics is far small Volume in hole causes the electron amount injected in active layer much larger than number of cavities.In order to avoid n type semiconductor layer offer Electron transfer into p type semiconductor layer with hole carry out non-radiative recombination, it will usually between active layer and p type semiconductor layer Electronic barrier layer is set, electronics is stopped to transit to p type semiconductor layer from active layer.
The material of active layer mainly selects InGaN, and the material of electronic barrier layer generally selects aluminium gallium nitride alloy, aluminium nitride The growth temperature of gallium is higher, and the phosphide atom in active layer can be made to parse, influence the recombination luminescence of electrons and holes in active layer. It, can also be in active layer and electronic barrier layer in order to avoid the high growth temperature of electronic barrier layer causes the phosphide atom in active layer to parse Between be arranged low temperature P-type layer, prevent the high temperature of electronic barrier layer from influencing active layer.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The material of low temperature P-type layer generally selects as p type semiconductor layer, i.e. the gallium nitride of p-type doping, therefore low temperature P Type layer can also provide the hole for carrying out recombination luminescence.When the electron transition that n type semiconductor layer provides is into low temperature P-type layer, Non-radiative recombination can be carried out with the hole in low temperature P-type layer, influence the luminous efficiency of the radiation recombination of electrons and holes, cause The luminous efficiency of LED is lower.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and its growing method, it is able to solve existing There is technology electronics to be easy to transit in low temperature P-type layer carry out non-radiative recombination with hole, cause the luminous efficiency of LED lower Problem.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride base hairs Optical diode epitaxial wafer includes substrate, buffer layer, N-type layer, active layer, low temperature P-type layer, electronic barrier layer and high temperature P-type layer, institute State buffer layer, the N-type layer, the active layer, the low temperature P type layer, the electronic barrier layer and the high temperature P-type layer according to Secondary to be layered on the substrate, the material of the low temperature P type layer uses the aluminium gallium nitride alloy of p-type doping, the electronic barrier layer Material uses the aluminium indium gallium nitrogen layer of p-type doping.
Optionally, the molar content of aluminium component is less than aluminium component in the electronic barrier layer and rubs in the low temperature P-type layer That content.
Preferably, the molar content of aluminium component is 0.05~0.1 in the low temperature P-type layer.
Preferably, the molar content of aluminium component is 0.1~0.5 in the electronic barrier layer.
Optionally, the molar content of indium component is 0.05~0.3 in the electronic barrier layer.
Optionally, the doping concentration of P-type dopant is higher than p-type doping in the high temperature P-type layer in the low temperature P-type layer The doping concentration of agent.
Preferably, the doping concentration of P-type dopant is 10 in the low temperature P-type layer20/cm3~1021/cm3。
Optionally, the doping concentration of P-type dopant is adulterated lower than P type in the high temperature P-type layer in the electronic barrier layer The doping concentration of agent.
Preferably, the doping concentration of P-type dopant is 10 in the electronic barrier layer17/cm3~1018/cm3。
On the other hand, the embodiment of the invention provides a kind of growing method of gallium nitride based LED epitaxial slice, institutes Stating growing method includes:
One substrate is provided；
Successively grown buffer layer, N-type layer, active layer, low temperature P-type layer, electronic barrier layer and high temperature p-type over the substrate Layer；
Wherein, the material of the low temperature P-type layer uses the aluminium gallium nitride alloy of p-type doping, and the material of the electronic barrier layer is adopted The aluminium indium gallium nitrogen layer adulterated with p-type.
Technical solution provided in an embodiment of the present invention has the benefit that
By the way that the material of low temperature P-type layer to be changed to the aluminium gallium nitride alloy of p-type doping, the potential barrier using aluminium component is higher, will be low The barrier height of warm P-type layer is promoted, it is possible to prevente effectively from the electron transition that provides of n type semiconductor layer into low temperature P-type layer with it is low Hole in warm P-type layer carries out non-radiative recombination, and then the non-radiative recombination of electrons and holes is avoided to influence electrons and holes Radiation recombination shines, and improves the luminous efficiency of LED.And low temperature P-type layer still uses p-type to adulterate, and can also provide injection The luminous hole of radiation recombination is carried out in active layer with electronics, increases and carries out the luminous hole of radiation recombination in active layer with electronics Quantity increases the recombination luminescence efficiency of electrons and holes in active layer, further improves the luminous efficiency of LED.Electronics simultaneously The material on barrier layer is changed to the aluminium indium gallium nitrogen layer of p-type doping, and the potential barrier using indium component is lower, and the potential barrier of electronic barrier layer is high Degree reduces, and active layer is injected in the hole for avoiding the potential barrier between active layer and p type semiconductor layer too high and influencing high temperature P type layer In with electronics carry out radiation recombination shine, to avoid causing negatively influencing to the luminous efficiency of LED, be equivalent to and improve LED's Luminous efficiency.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other Attached drawing.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is a kind of process of the growing method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention Formula is described in further detail.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, Fig. 1 provides for the embodiment of the present invention Gallium nitride based LED epitaxial slice structural schematic diagram, referring to Fig. 1, which includes Substrate 10, buffer layer 20, N-type layer 30, active layer 40, low temperature P-type layer 50, electronic barrier layer 60 and high temperature P-type layer 70, buffer layer 20, N-type layer 30, active layer 40, low temperature P-type layer 50, electronic barrier layer 60 and high temperature P-type layer 70 are sequentially laminated on substrate 10.
In the present embodiment, the material of low temperature P-type layer 50 uses the aluminium gallium nitride alloy of p-type doping, the material of electronic barrier layer 60 The aluminium indium gallium nitrogen layer that material is adulterated using p-type.
The embodiment of the present invention utilizes the gesture of aluminium component by the way that the material of low temperature P-type layer is changed to the aluminium gallium nitride alloy that p-type is adulterated It builds higher, the barrier height of low temperature P-type layer is promoted, it is possible to prevente effectively from the electron transition that provides of n type semiconductor layer is to low temperature P Non-radiative recombination is carried out with the hole in low temperature P-type layer in type layer, and then the non-radiative recombination of electrons and holes is avoided to influence electricity The radiation recombination in son and hole shines, and improves the luminous efficiency of LED.And low temperature P-type layer still uses p-type to adulterate, and it can also The luminous hole of radiation recombination is carried out in injection active layer with electronics to provide, increases in active layer and carries out radiation recombination with electronics Luminous number of cavities increases the recombination luminescence efficiency of electrons and holes in active layer, further improves the luminous effect of LED Rate.The material of electronic barrier layer is changed to the aluminium indium gallium nitrogen layer of p-type doping simultaneously, and the potential barrier using indium component is lower, and electronics is hindered The barrier height of barrier reduces, and avoids the potential barrier between active layer and p type semiconductor layer too high and influences the hole of high temperature P-type layer It injects in active layer and shines with electronics progress radiation recombination, to avoid causing negatively influencing to the luminous efficiency of LED, be equivalent to Improve the luminous efficiency of LED.
Optionally, the molar content of aluminium component can be less than aluminium component in electronic barrier layer 60 and rub in low temperature P-type layer 50 That content.
Molar content by limiting aluminium component in low temperature P-type layer is less than the molar content of aluminium component in electronic barrier layer, So that the barrier height of low temperature P-type layer is lower than the barrier height of electronic barrier layer, low temperature P-type layer and electronic barrier layer cooperation, it can Effectively to stop electron transition to carry out non-radiative recombination with hole into high temperature P-type layer, while being also beneficial to the sky of high temperature P-type layer Cave is injected in active layer to shine with electronics progress radiation recombination.
Preferably, the molar content of aluminium component can be 0.05~0.1, such as 0.08 in low temperature P-type layer 50.
It, may be due to aluminium component in low temperature P-type layer if the molar content of aluminium component is less than 0.05 in low temperature P-type layer Molar content is too small and electron transfer can not effectively be stopped to carry out non-radiative recombination with hole into low temperature P-type layer, influences LED's Luminous efficiency；If the molar content of aluminium component is greater than 0.1 in low temperature P-type layer, may be due to aluminium component in low temperature P-type layer Molar content is too big and causes certain obstruction to shining in hole injection active layer with electronics progress radiation recombination, influences LED Luminous efficiency.
Preferably, the molar content of aluminium component can be 0.1~0.5, such as 0.3 in electronic barrier layer 60.
It, may be due to aluminium component in electronic barrier layer if the molar content of aluminium component is less than 0.1 in electronic barrier layer Molar content it is too small and can not effectively stop electron transition into high temperature P-type layer with hole carry out non-radiative recombination, influence LED Luminous efficiency；If the molar content of aluminium component is greater than 0.5 in electronic barrier layer, may be due to aluminium group in electronic barrier layer The molar content divided is too big and causes certain obstruction to shining in hole injection active layer with electronics progress radiation recombination, influence The luminous efficiency of LED.
Optionally, the molar content of indium component can be 0.05~0.3, such as 0.15 in electronic barrier layer 60.
It, may be due to indium component in electronic barrier layer if the molar content of indium component is less than 0.05 in electronic barrier layer Molar content it is too small and the barrier height of electronic barrier layer can not be effectively reduced, cause the potential barrier of electronic barrier layer higher, shadow It rings in the hole injection active layer of high temperature P-type layer and shines with electronics progress radiation recombination, the luminous efficiency of LED is caused to reduce；Such as The molar content of indium component is greater than 0.3 in fruit electronic barrier layer, then may be due to the molar content of indium component in electronic barrier layer It is too high and cause the potential barrier of electronic barrier layer too low, it can not effectively stop electron transition to carry out into high temperature P-type layer with hole non- Radiation recombination influences the luminous efficiency of LED.
Optionally, the doping concentration of P-type dopant can be higher than p-type doping in high temperature P-type layer 70 in low temperature P-type layer 50 The doping concentration of agent.
Doping concentration by limiting P-type dopant in low temperature P-type layer is higher than the doping of P-type dopant in high temperature P-type layer Concentration is conducive to more multi-hole and is injected in active layer, improves the hole concentration in active layer, and then improve the luminous efficiency of LED.
Preferably, the doping concentration of P-type dopant can be 10 in low temperature P-type layer 5020/cm3~1021/cm3, such as 5* 1020/cm3。
If the doping concentration of P-type dopant is lower than 10 in low temperature P-type layer20/cm3, then may be due to P in low temperature P type layer The doping concentration of type dopant it is too low and lead to not inject sufficient amount of hole into active layer and electronics radiate it is multiple It closes and shines, influence the luminous efficiency of LED；If the doping concentration of P-type dopant is higher than 10 in low temperature P-type layer21/cm3, then may Cause impurity in low temperature P-type layer too many since the doping concentration of P-type dopant in low temperature P-type layer is too high, it is second-rate, it is right The luminous efficiency of LED causes negatively influencing.
Optionally, the doping concentration of P-type dopant can be lower than p-type doping in high temperature P-type layer 70 in electronic barrier layer 60 The doping concentration of agent.
By doping of the doping concentration lower than P-type dopant in high temperature P-type layer for limiting P-type dopant in electronic barrier layer Concentration is conducive to shine in the hole injection active layer in high temperature P-type layer with electronics progress radiation recombination, improves shining for LED Efficiency.
Preferably, the doping concentration of P-type dopant can be 10 in electronic barrier layer 6017/cm3~1018/cm3。
If the doping concentration of P-type dopant is lower than 10 in electronic barrier layer17/cm3, then may be due in electronic barrier layer The doping concentration of P-type dopant is too low and influences hole migration into active layer, influences the luminous efficiency of LED；If electronics hinders The doping concentration of P-type dopant is higher than 10 in barrier18/cm3, then may be dense due to the doping of P-type dopant in electronic barrier layer Du Taigao and influence the hole in high temperature P-type layer injection active layer in electronics carry out radiation recombination shine, to the luminous effect of LED Rate causes negatively influencing.
Specifically, the material of substrate 10 can use sapphire.The material of buffer layer 20 can use aluminium nitride (AlN).N The material of type semiconductor layer 30 can use the gallium nitride of n-type doping.Active layer 40 may include multiple Quantum Well and multiple amounts Son is built, and multiple Quantum Well and multiple quantum build alternately laminated setting；The material of Quantum Well can use InGaN (InGaN), The material that quantum is built can use gallium nitride.The material of high temperature P-type layer 70 can be using the gallium nitride of p-type doping.
Specifically, the thickness of buffer layer 20 can be 80nm~150nm, preferably 120nm.The thickness of n type semiconductor layer 30 Degree can be 1.2 μm~6 μm, preferably 3.6 μm；The doping concentration of N type dopant can be 10 in n type semiconductor layer 3018cm-3~1019cm-3, preferably 5*1018cm-3.The thickness of Quantum Well can be 0.5nm~4.5nm, preferably 2.5nm；Quantum is built Thickness can be 7nm~20nm, preferably 13.5nm；The quantity of Quantum Well is identical as the quantity that quantum is built, the number that quantum is built Amount can be 6~12, preferably 9.The thickness of high temperature P-type layer 70 can be 80nm~800nm, preferably 440nm；It is high The doping concentration of P-type dopant can be 10 in warm P-type layer 7019/cm3~1020/cm3, preferably 5*1019cm-3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include undoped gallium nitride 81, Undoped gallium nitride layer 81 is arranged between buffer layer 20 and n type semiconductor layer 30, to alleviate between substrate and n type semiconductor layer Lattice mismatch.
Further, the thickness of undoped gallium nitride layer 81 can be 0.4 μm~4.8 μm, preferably 2.6 μm.
In specific implementation, buffer layer is the gallium nitride of the layer of low-temperature epitaxy on substrate first, therefore also referred to as For low temperature buffer layer.The longitudinal growth for carrying out gallium nitride in low temperature buffer layer again will form multiple mutually independent three-dimensional islands Structure, referred to as three-dimensional nucleating layer；Then gallium nitride is carried out between each three-dimensional island structure on all three-dimensional island structures Cross growth, form two-dimension plane structure, referred to as two-dimentional retrieving layer；It is finally one layer of high growth temperature thicker on two-dimensional growth layer Gallium nitride, referred to as high temperature buffer layer.Three-dimensional nucleating layer, two-dimentional retrieving layer and high temperature buffer layer are referred to as not in the present embodiment Doped gallium nitride layer.
Optionally, as shown in Figure 1, the LED epitaxial slice can also include stress release layer 82, stress release layer 82 are arranged between n type semiconductor layer 30 and active layer 40, to discharge the stress generated in epitaxial process and defect, improve The growth quality of active layer, and then improve the luminous efficiency of LED.
Specifically, stress release layer 82 may include multiple first sublayers and multiple second sublayers, multiple first sublayers and Multiple alternately laminated settings of second sublayer；The material of first sublayer can use InGaN, and the material of the second sublayer can be adopted Use gallium nitride.
Further, the thickness of gallium indium nitride layer can be 1nm~3nm, preferably 2nm；The thickness of gallium nitride layer can be with For 20nm~40nm, preferably 30nm；The quantity of gallium indium nitride layer and the quantity of gallium nitride layer are identical, and the quantity of gallium nitride layer can Think 3~9, preferably 6.
Optionally, as shown in Figure 1, the LED epitaxial slice can also include p-type contact layer 83, P type contact layer 83 It is laid in high temperature P-type layer 70, to form ohm between the electrode or transparent conductive film that are formed in chip fabrication technique Contact.
Specifically, the material of p-type contact layer 83 can be using the InGaN of p-type doping.
Further, the thickness of p-type contact layer 83 can be 5nm~200nm, preferably 102.5nm；P type contact layer 83 The doping concentration of middle P-type dopant can be 1021/cm3~1022/cm3, preferably 6*1021/cm3。
The embodiment of the invention provides a kind of growing methods of gallium nitride based LED epitaxial slice, are suitable for growth figure Gallium nitride based LED epitaxial slice shown in 1.Fig. 2 is gallium nitride based light emitting diode extension provided in an embodiment of the present invention The flow chart of the growing method of piece, referring to fig. 2, which includes:
Step 201: a substrate is provided.
Optionally, which may include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), in hydrogen atmosphere to substrate carry out 6 minutes~ It makes annealing treatment within 10 minutes (preferably 8 minutes)；
Nitrogen treatment is carried out to substrate.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer Long quality.
Step 202: successively grown buffer layer, N-type layer, active layer, low temperature P-type layer, electronic barrier layer and height on substrate Warm P-type layer.
Wherein, the material of low temperature P-type layer uses the aluminium gallium nitride alloy of p-type doping, and the material of electronic barrier layer is adulterated using p-type Aluminium indium gallium nitrogen layer.
The embodiment of the present invention utilizes the gesture of aluminium component by the way that the material of low temperature P-type layer is changed to the aluminium gallium nitride alloy that p-type is adulterated It builds higher, the barrier height of low temperature P-type layer is promoted, it is possible to prevente effectively from the electron transition that provides of n type semiconductor layer is to low temperature P Non-radiative recombination is carried out with the hole in low temperature P-type layer in type layer, and then the non-radiative recombination of electrons and holes is avoided to influence electricity The radiation recombination in son and hole shines, and improves the luminous efficiency of LED.And low temperature P-type layer still uses p-type to adulterate, and it can also The luminous hole of radiation recombination is carried out in injection active layer with electronics to provide, increases in active layer and carries out radiation recombination with electronics Luminous number of cavities increases the recombination luminescence efficiency of electrons and holes in active layer, further improves the luminous effect of LED Rate.The material of electronic barrier layer is changed to the aluminium indium gallium nitrogen layer of p-type doping simultaneously, and the potential barrier using indium component is lower, and electronics is hindered The barrier height of barrier reduces, and avoids the potential barrier between active layer and p type semiconductor layer too high and influences the hole of high temperature P-type layer It injects in active layer and shines with electronics progress radiation recombination, to avoid causing negatively influencing to the luminous efficiency of LED, be equivalent to Improve the luminous efficiency of LED.
Specifically, which may include:
The first step, using physical vapour deposition (PVD) (English: Physical Vapor Deposition, abbreviation: PVD) technology Buffer layer is formed on the substrate；
Second step, controlled at 900 DEG C~1180 DEG C (preferably 1040 DEG C), pressure is 30torr~480torr (preferably 255torr), grows n type semiconductor layer on the buffer layer；
Third step grows active layer on n type semiconductor layer；Wherein, the growth temperature of Quantum Well is 700 DEG C~890 DEG C (preferably 795 DEG C), pressure are 30torr~600torr (preferably 345torr)；Quantum build growth temperature be 800 DEG C~ 980 DEG C (preferably 890 DEG C), pressure is 10torr~580torr (preferably 395torr)；
4th step, controlled at 500 DEG C~800 DEG C (preferably 675 DEG C), pressure is that 50torr~500torr is (excellent It is selected as 300torr), the growing low temperature P-type layer on active layer；
5th step, controlled at 800 DEG C~1050 DEG C (preferably 850 DEG C), pressure is that 30torr~300torr is (excellent It is selected as 250torr), electronic barrier layer is grown in low temperature P-type layer；
6th step, controlled at 750 DEG C~1050 DEG C (preferably 900 DEG C), pressure is that 50torr~450torr is (excellent It is selected as 250torr), high temperature P-type layer is grown on electronic barrier layer.
Optionally, after the first step, which can also include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 400torr~600torr (preferably 500torr), the in-situ annealing carried out 5 minutes~10 minutes (preferably 8 minutes) to buffer layer is handled.
Optionally, before second step, which can also include:
Undoped gallium nitride layer is grown on the buffer layer.
Correspondingly, n type semiconductor layer is grown on undoped gallium nitride layer.
Specifically, undoped gallium nitride layer is grown on the buffer layer, may include:
Controlled at 800 DEG C~1180 DEG C (preferably 990 DEG C), pressure be 120torr~600torr (preferably 360torr), undoped gallium nitride layer is grown on the buffer layer.
Optionally, before third step, which can also include:
The growth stress releasing layer on n type semiconductor layer.
Correspondingly, active layer is grown on stress release layer.
Specifically, the growth stress releasing layer on n type semiconductor layer may include:
Controlled at 550 DEG C~900 DEG C (preferably 755 DEG C), pressure be 50torr~500torr (preferably 400torr), the growth stress releasing layer on n type semiconductor layer.
Optionally, after the 6th step, which can also include:
The growing P-type contact layer in high temperature P-type layer.
Specifically, the growing P-type contact layer in high temperature P-type layer may include:
Controlled at 800 DEG C~1150 DEG C (preferably 975 DEG C), pressure be 50torr~300torr (preferably 175torr), the growing P-type contact layer in high temperature P-type layer.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 500 DEG C~900 DEG C it is (excellent It is selected as 700 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, so The temperature of epitaxial wafer is reduced to room temperature again afterwards.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer.With trimethyl when realization As gallium source, high pure nitrogen is mixed as indium source, trimethyl aluminium as silicon source, N-type as nitrogen source, trimethyl indium for gallium or trimethyl second Miscellaneous dose of selection silane, P-type dopant select two luxuriant magnesium.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.

Claims (10)

1. a kind of gallium nitride based LED epitaxial slice, the gallium nitride based LED epitaxial slice includes substrate, buffering Layer, N-type layer, active layer, low temperature P-type layer, electronic barrier layer and high temperature P-type layer, it is the buffer layer, the N-type layer, described active Layer, the low temperature P-type layer, the electronic barrier layer and the high temperature P-type layer stack gradually over the substrate, and feature exists In the material of the low temperature P-type layer uses the aluminium gallium nitride alloy of p-type doping, and the material of the electronic barrier layer is using p-type doping Aluminium indium gallium nitrogen layer.
2. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that in the low temperature P-type layer The molar content of aluminium component is less than the molar content of aluminium component in the electronic barrier layer.
3. gallium nitride based LED epitaxial slice according to claim 2, which is characterized in that in the low temperature P-type layer The molar content of aluminium component is 0.05~0.1.
4. gallium nitride based LED epitaxial slice according to claim 2, which is characterized in that in the electronic barrier layer The molar content of aluminium component is 0.1~0.5.
5. gallium nitride based LED epitaxial slice according to any one of claims 1 to 4, which is characterized in that the electricity The molar content of indium component is 0.05~0.3 in sub- barrier layer.
6. gallium nitride based LED epitaxial slice according to any one of claims 1 to 4, which is characterized in that described low The doping concentration of P-type dopant is higher than the doping concentration of P-type dopant in the high temperature P-type layer in warm P-type layer.
7. gallium nitride based LED epitaxial slice according to claim 6, which is characterized in that P in the low temperature P-type layer The doping concentration of type dopant is 1020/cm3~1021/cm3。
8. gallium nitride based LED epitaxial slice according to any one of claims 1 to 4, which is characterized in that the electricity Doping concentration of the doping concentration of P-type dopant lower than P-type dopant in the high temperature P-type layer in sub- barrier layer.
9. gallium nitride based LED epitaxial slice according to claim 8, which is characterized in that in the electronic barrier layer The doping concentration of P-type dopant is 1017/cm3~1018/cm3。
10. a kind of growing method of gallium nitride based LED epitaxial slice, which is characterized in that the growing method includes:
One substrate is provided；
Successively grown buffer layer, N-type layer, active layer, low temperature P-type layer, electronic barrier layer and high temperature P-type layer over the substrate；
Wherein, the material of the low temperature P-type layer uses the aluminium gallium nitride alloy of p-type doping, and the material of the electronic barrier layer uses p-type The aluminium indium gallium nitrogen layer of doping.
CN201810650541.7A 2018-06-22 2018-06-22 Gallium nitride-based light emitting diode epitaxial wafer and growth method thereof Active CN109065675B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810650541.7A CN109065675B (en) 2018-06-22 2018-06-22 Gallium nitride-based light emitting diode epitaxial wafer and growth method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810650541.7A CN109065675B (en) 2018-06-22 2018-06-22 Gallium nitride-based light emitting diode epitaxial wafer and growth method thereof

Publications (2)

Publication Number Publication Date
CN109065675A true CN109065675A (en) 2018-12-21
CN109065675B CN109065675B (en) 2020-07-07

Family

ID=64820775

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810650541.7A Active CN109065675B (en) 2018-06-22 2018-06-22 Gallium nitride-based light emitting diode epitaxial wafer and growth method thereof

Country Status (1)

Country Link
CN (1) CN109065675B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113675303A (en) * 2021-08-20 2021-11-19 江西兆驰半导体有限公司 Nitride light-emitting diode epitaxial wafer and preparation method thereof
CN116154059A (en) * 2023-04-04 2023-05-23 江西兆驰半导体有限公司 Gallium nitride light-emitting diode epitaxial structure, LED and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101834248A (en) * 2010-04-21 2010-09-15 中国科学院半导体研究所 Gallium nitride light emitting diode
CN105206714A (en) * 2015-09-01 2015-12-30 映瑞光电科技(上海)有限公司 GaN-based LED epitaxy structure and preparation method thereof
US9590139B1 (en) * 2015-11-09 2017-03-07 PlayNitride Inc. Light emitting module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101834248A (en) * 2010-04-21 2010-09-15 中国科学院半导体研究所 Gallium nitride light emitting diode
CN105206714A (en) * 2015-09-01 2015-12-30 映瑞光电科技(上海)有限公司 GaN-based LED epitaxy structure and preparation method thereof
US9590139B1 (en) * 2015-11-09 2017-03-07 PlayNitride Inc. Light emitting module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113675303A (en) * 2021-08-20 2021-11-19 江西兆驰半导体有限公司 Nitride light-emitting diode epitaxial wafer and preparation method thereof
CN116154059A (en) * 2023-04-04 2023-05-23 江西兆驰半导体有限公司 Gallium nitride light-emitting diode epitaxial structure, LED and preparation method thereof

Also Published As

Publication number Publication date
CN109065675B (en) 2020-07-07

Similar Documents

Publication Publication Date Title
CN103337573B (en) The epitaxial wafer of semiconductor light-emitting-diode and manufacture method thereof
CN109786529A (en) A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN106601882B (en) A kind of epitaxial wafer and its manufacturing method of light emitting diode
CN109103303B (en) Preparation method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer
CN109860358B (en) Gallium nitride-based light emitting diode epitaxial wafer and preparation method thereof
CN109346576A (en) A kind of LED epitaxial slice and preparation method thereof
CN109860359A (en) A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN109192831A (en) A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN109256445A (en) A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN109346568B (en) Light emitting diode epitaxial wafer and preparation method thereof
CN109065682B (en) A kind of LED epitaxial slice and its manufacturing method
CN109065675A (en) A kind of gallium nitride based LED epitaxial slice and its growing method
CN109473516A (en) A kind of gallium nitride based LED epitaxial slice and its growing method
CN109192829A (en) A kind of gallium nitride based LED epitaxial slice and its growing method
CN109273571A (en) A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN109309150A (en) A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN108598224A (en) A kind of production method and its LED epitaxial slice of LED epitaxial slice
TW201232824A (en) Transparent thin film, light emitting device comprising the same, and methods for preparing the same
CN109192826B (en) A kind of LED epitaxial slice and preparation method thereof
CN109087977A (en) A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN109686823A (en) A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN109768136A (en) A kind of LED epitaxial slice and its growing method
CN109473521A (en) A kind of LED epitaxial slice and preparation method thereof
CN109346577A (en) A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN109301038A (en) A kind of gallium nitride based LED epitaxial slice and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant