CN109065675A - A kind of gallium nitride based LED epitaxial slice and its growing method - Google Patents
A kind of gallium nitride based LED epitaxial slice and its growing method Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims abstract description 77
- 239000000463 material Substances 0.000 claims abstract description 39
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 37
- 239000004411 aluminium Substances 0.000 claims abstract description 37
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 26
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 14
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 12
- 239000000956 alloy Substances 0.000 claims abstract description 12
- 229910052738 indium Inorganic materials 0.000 claims abstract description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 12
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000002019 doping agent Substances 0.000 claims description 30
- 230000005611 electricity Effects 0.000 claims description 5
- 230000003139 buffering effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 37
- 238000005036 potential barrier Methods 0.000 abstract description 12
- 230000006798 recombination Effects 0.000 description 40
- 238000005215 recombination Methods 0.000 description 40
- 239000000306 component Substances 0.000 description 29
- 230000005855 radiation Effects 0.000 description 21
- 230000003760 hair shine Effects 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000004020 luminiscence type Methods 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slice and its growing methods, belong to technical field of semiconductors.The gallium nitride based LED epitaxial slice includes substrate, buffer layer, N-type layer, active layer, low temperature P-type layer, electronic barrier layer and high temperature P-type layer, the buffer layer, the N-type layer, the active layer, the low temperature P-type layer, the electronic barrier layer and the high temperature P-type layer stack gradually over the substrate, the material of the low temperature P-type layer uses the aluminium gallium nitride alloy of p-type doping, and the material of the electronic barrier layer uses the aluminium indium gallium nitrogen layer of p-type doping.The present invention is by being changed to the aluminium gallium nitride alloy that p-type is adulterated for the material of low temperature P-type layer, potential barrier using aluminium component is higher, the barrier height of low temperature P-type layer is promoted, the material of electronic barrier layer is changed to the aluminium indium gallium nitrogen layer of p-type doping simultaneously, potential barrier using indium component is lower, the barrier height of electronic barrier layer is reduced, the luminous efficiency of LED is finally improved.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its growth
Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.Gallium nitride (GaN) has good thermal conductivity, while having the good characteristics such as high temperature resistant, acid and alkali-resistance, high rigidity,
It is widely used in the light emitting diode of various wave bands.The core component of gallium nitride based light emitting diode is chip, and chip includes outer
Prolong piece and the electrode that extension on piece is set.
Existing gallium nitride based LED epitaxial slice includes substrate, buffer layer, n type semiconductor layer, active layer and p-type
Semiconductor layer, buffer layer, n type semiconductor layer, active layer and p type semiconductor layer stack gradually on substrate.P type semiconductor layer is used
In providing the hole for carrying out recombination luminescence, n type semiconductor layer is used to provide the electronics for carrying out recombination luminescence, and active layer is for carrying out
The radiation recombination of electrons and holes shines, and substrate is used to provide growing surface for epitaxial material;The material of substrate generally selects indigo plant
Jewel, the material of n type semiconductor layer are the gallium nitride of n-type doping, and sapphire and gallium nitride are dissimilar materials, are existed between the two
Biggish lattice mismatch, buffer layer are used to alleviate the lattice mismatch between substrate and n type semiconductor layer.
The electron amount that N-type semiconductor provides is much larger than the number of cavities of p type semiconductor layer, in addition the volume of electronics is far small
Volume in hole causes the electron amount injected in active layer much larger than number of cavities.In order to avoid n type semiconductor layer offer
Electron transfer into p type semiconductor layer with hole carry out non-radiative recombination, it will usually between active layer and p type semiconductor layer
Electronic barrier layer is set, electronics is stopped to transit to p type semiconductor layer from active layer.
The material of active layer mainly selects InGaN, and the material of electronic barrier layer generally selects aluminium gallium nitride alloy, aluminium nitride
The growth temperature of gallium is higher, and the phosphide atom in active layer can be made to parse, influence the recombination luminescence of electrons and holes in active layer.
It, can also be in active layer and electronic barrier layer in order to avoid the high growth temperature of electronic barrier layer causes the phosphide atom in active layer to parse
Between be arranged low temperature P-type layer, prevent the high temperature of electronic barrier layer from influencing active layer.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The material of low temperature P-type layer generally selects as p type semiconductor layer, i.e. the gallium nitride of p-type doping, therefore low temperature P
Type layer can also provide the hole for carrying out recombination luminescence.When the electron transition that n type semiconductor layer provides is into low temperature P-type layer,
Non-radiative recombination can be carried out with the hole in low temperature P-type layer, influence the luminous efficiency of the radiation recombination of electrons and holes, cause
The luminous efficiency of LED is lower.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and its growing method, it is able to solve existing
There is technology electronics to be easy to transit in low temperature P-type layer carry out non-radiative recombination with hole, cause the luminous efficiency of LED lower
Problem.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride base hairs
Optical diode epitaxial wafer includes substrate, buffer layer, N-type layer, active layer, low temperature P-type layer, electronic barrier layer and high temperature P-type layer, institute
State buffer layer, the N-type layer, the active layer, the low temperature P type layer, the electronic barrier layer and the high temperature P-type layer according to
Secondary to be layered on the substrate, the material of the low temperature P type layer uses the aluminium gallium nitride alloy of p-type doping, the electronic barrier layer
Material uses the aluminium indium gallium nitrogen layer of p-type doping.
Optionally, the molar content of aluminium component is less than aluminium component in the electronic barrier layer and rubs in the low temperature P-type layer
That content.
Preferably, the molar content of aluminium component is 0.05~0.1 in the low temperature P-type layer.
Preferably, the molar content of aluminium component is 0.1~0.5 in the electronic barrier layer.
Optionally, the molar content of indium component is 0.05~0.3 in the electronic barrier layer.
Optionally, the doping concentration of P-type dopant is higher than p-type doping in the high temperature P-type layer in the low temperature P-type layer
The doping concentration of agent.
Preferably, the doping concentration of P-type dopant is 10 in the low temperature P-type layer20/cm3~1021/cm3。
Optionally, the doping concentration of P-type dopant is adulterated lower than P type in the high temperature P-type layer in the electronic barrier layer
The doping concentration of agent.
Preferably, the doping concentration of P-type dopant is 10 in the electronic barrier layer17/cm3~1018/cm3。
On the other hand, the embodiment of the invention provides a kind of growing method of gallium nitride based LED epitaxial slice, institutes
Stating growing method includes:
One substrate is provided;
Successively grown buffer layer, N-type layer, active layer, low temperature P-type layer, electronic barrier layer and high temperature p-type over the substrate
Layer;
Wherein, the material of the low temperature P-type layer uses the aluminium gallium nitride alloy of p-type doping, and the material of the electronic barrier layer is adopted
The aluminium indium gallium nitrogen layer adulterated with p-type.
Technical solution provided in an embodiment of the present invention has the benefit that
By the way that the material of low temperature P-type layer to be changed to the aluminium gallium nitride alloy of p-type doping, the potential barrier using aluminium component is higher, will be low
The barrier height of warm P-type layer is promoted, it is possible to prevente effectively from the electron transition that provides of n type semiconductor layer into low temperature P-type layer with it is low
Hole in warm P-type layer carries out non-radiative recombination, and then the non-radiative recombination of electrons and holes is avoided to influence electrons and holes
Radiation recombination shines, and improves the luminous efficiency of LED.And low temperature P-type layer still uses p-type to adulterate, and can also provide injection
The luminous hole of radiation recombination is carried out in active layer with electronics, increases and carries out the luminous hole of radiation recombination in active layer with electronics
Quantity increases the recombination luminescence efficiency of electrons and holes in active layer, further improves the luminous efficiency of LED.Electronics simultaneously
The material on barrier layer is changed to the aluminium indium gallium nitrogen layer of p-type doping, and the potential barrier using indium component is lower, and the potential barrier of electronic barrier layer is high
Degree reduces, and active layer is injected in the hole for avoiding the potential barrier between active layer and p type semiconductor layer too high and influencing high temperature P type layer
In with electronics carry out radiation recombination shine, to avoid causing negatively influencing to the luminous efficiency of LED, be equivalent to and improve LED's
Luminous efficiency.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention;
Fig. 2 is a kind of process of the growing method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, Fig. 1 provides for the embodiment of the present invention
Gallium nitride based LED epitaxial slice structural schematic diagram, referring to Fig. 1, which includes
Substrate 10, buffer layer 20, N-type layer 30, active layer 40, low temperature P-type layer 50, electronic barrier layer 60 and high temperature P-type layer 70, buffer layer
20, N-type layer 30, active layer 40, low temperature P-type layer 50, electronic barrier layer 60 and high temperature P-type layer 70 are sequentially laminated on substrate 10.
In the present embodiment, the material of low temperature P-type layer 50 uses the aluminium gallium nitride alloy of p-type doping, the material of electronic barrier layer 60
The aluminium indium gallium nitrogen layer that material is adulterated using p-type.
The embodiment of the present invention utilizes the gesture of aluminium component by the way that the material of low temperature P-type layer is changed to the aluminium gallium nitride alloy that p-type is adulterated
It builds higher, the barrier height of low temperature P-type layer is promoted, it is possible to prevente effectively from the electron transition that provides of n type semiconductor layer is to low temperature P
Non-radiative recombination is carried out with the hole in low temperature P-type layer in type layer, and then the non-radiative recombination of electrons and holes is avoided to influence electricity
The radiation recombination in son and hole shines, and improves the luminous efficiency of LED.And low temperature P-type layer still uses p-type to adulterate, and it can also
The luminous hole of radiation recombination is carried out in injection active layer with electronics to provide, increases in active layer and carries out radiation recombination with electronics
Luminous number of cavities increases the recombination luminescence efficiency of electrons and holes in active layer, further improves the luminous effect of LED
Rate.The material of electronic barrier layer is changed to the aluminium indium gallium nitrogen layer of p-type doping simultaneously, and the potential barrier using indium component is lower, and electronics is hindered
The barrier height of barrier reduces, and avoids the potential barrier between active layer and p type semiconductor layer too high and influences the hole of high temperature P-type layer
It injects in active layer and shines with electronics progress radiation recombination, to avoid causing negatively influencing to the luminous efficiency of LED, be equivalent to
Improve the luminous efficiency of LED.
Optionally, the molar content of aluminium component can be less than aluminium component in electronic barrier layer 60 and rub in low temperature P-type layer 50
That content.
Molar content by limiting aluminium component in low temperature P-type layer is less than the molar content of aluminium component in electronic barrier layer,
So that the barrier height of low temperature P-type layer is lower than the barrier height of electronic barrier layer, low temperature P-type layer and electronic barrier layer cooperation, it can
Effectively to stop electron transition to carry out non-radiative recombination with hole into high temperature P-type layer, while being also beneficial to the sky of high temperature P-type layer
Cave is injected in active layer to shine with electronics progress radiation recombination.
Preferably, the molar content of aluminium component can be 0.05~0.1, such as 0.08 in low temperature P-type layer 50.
It, may be due to aluminium component in low temperature P-type layer if the molar content of aluminium component is less than 0.05 in low temperature P-type layer
Molar content is too small and electron transfer can not effectively be stopped to carry out non-radiative recombination with hole into low temperature P-type layer, influences LED's
Luminous efficiency;If the molar content of aluminium component is greater than 0.1 in low temperature P-type layer, may be due to aluminium component in low temperature P-type layer
Molar content is too big and causes certain obstruction to shining in hole injection active layer with electronics progress radiation recombination, influences LED
Luminous efficiency.
Preferably, the molar content of aluminium component can be 0.1~0.5, such as 0.3 in electronic barrier layer 60.
It, may be due to aluminium component in electronic barrier layer if the molar content of aluminium component is less than 0.1 in electronic barrier layer
Molar content it is too small and can not effectively stop electron transition into high temperature P-type layer with hole carry out non-radiative recombination, influence LED
Luminous efficiency;If the molar content of aluminium component is greater than 0.5 in electronic barrier layer, may be due to aluminium group in electronic barrier layer
The molar content divided is too big and causes certain obstruction to shining in hole injection active layer with electronics progress radiation recombination, influence
The luminous efficiency of LED.
Optionally, the molar content of indium component can be 0.05~0.3, such as 0.15 in electronic barrier layer 60.
It, may be due to indium component in electronic barrier layer if the molar content of indium component is less than 0.05 in electronic barrier layer
Molar content it is too small and the barrier height of electronic barrier layer can not be effectively reduced, cause the potential barrier of electronic barrier layer higher, shadow
It rings in the hole injection active layer of high temperature P-type layer and shines with electronics progress radiation recombination, the luminous efficiency of LED is caused to reduce;Such as
The molar content of indium component is greater than 0.3 in fruit electronic barrier layer, then may be due to the molar content of indium component in electronic barrier layer
It is too high and cause the potential barrier of electronic barrier layer too low, it can not effectively stop electron transition to carry out into high temperature P-type layer with hole non-
Radiation recombination influences the luminous efficiency of LED.
Optionally, the doping concentration of P-type dopant can be higher than p-type doping in high temperature P-type layer 70 in low temperature P-type layer 50
The doping concentration of agent.
Doping concentration by limiting P-type dopant in low temperature P-type layer is higher than the doping of P-type dopant in high temperature P-type layer
Concentration is conducive to more multi-hole and is injected in active layer, improves the hole concentration in active layer, and then improve the luminous efficiency of LED.
Preferably, the doping concentration of P-type dopant can be 10 in low temperature P-type layer 5020/cm3~1021/cm3, such as 5*
1020/cm3。
If the doping concentration of P-type dopant is lower than 10 in low temperature P-type layer20/cm3, then may be due to P in low temperature P type layer
The doping concentration of type dopant it is too low and lead to not inject sufficient amount of hole into active layer and electronics radiate it is multiple
It closes and shines, influence the luminous efficiency of LED;If the doping concentration of P-type dopant is higher than 10 in low temperature P-type layer21/cm3, then may
Cause impurity in low temperature P-type layer too many since the doping concentration of P-type dopant in low temperature P-type layer is too high, it is second-rate, it is right
The luminous efficiency of LED causes negatively influencing.
Optionally, the doping concentration of P-type dopant can be lower than p-type doping in high temperature P-type layer 70 in electronic barrier layer 60
The doping concentration of agent.
By doping of the doping concentration lower than P-type dopant in high temperature P-type layer for limiting P-type dopant in electronic barrier layer
Concentration is conducive to shine in the hole injection active layer in high temperature P-type layer with electronics progress radiation recombination, improves shining for LED
Efficiency.
Preferably, the doping concentration of P-type dopant can be 10 in electronic barrier layer 6017/cm3~1018/cm3。
If the doping concentration of P-type dopant is lower than 10 in electronic barrier layer17/cm3, then may be due in electronic barrier layer
The doping concentration of P-type dopant is too low and influences hole migration into active layer, influences the luminous efficiency of LED;If electronics hinders
The doping concentration of P-type dopant is higher than 10 in barrier18/cm3, then may be dense due to the doping of P-type dopant in electronic barrier layer
Du Taigao and influence the hole in high temperature P-type layer injection active layer in electronics carry out radiation recombination shine, to the luminous effect of LED
Rate causes negatively influencing.
Specifically, the material of substrate 10 can use sapphire.The material of buffer layer 20 can use aluminium nitride (AlN).N
The material of type semiconductor layer 30 can use the gallium nitride of n-type doping.Active layer 40 may include multiple Quantum Well and multiple amounts
Son is built, and multiple Quantum Well and multiple quantum build alternately laminated setting;The material of Quantum Well can use InGaN (InGaN),
The material that quantum is built can use gallium nitride.The material of high temperature P-type layer 70 can be using the gallium nitride of p-type doping.
Specifically, the thickness of buffer layer 20 can be 80nm~150nm, preferably 120nm.The thickness of n type semiconductor layer 30
Degree can be 1.2 μm~6 μm, preferably 3.6 μm;The doping concentration of N type dopant can be 10 in n type semiconductor layer 3018cm-3~1019cm-3, preferably 5*1018cm-3.The thickness of Quantum Well can be 0.5nm~4.5nm, preferably 2.5nm;Quantum is built
Thickness can be 7nm~20nm, preferably 13.5nm;The quantity of Quantum Well is identical as the quantity that quantum is built, the number that quantum is built
Amount can be 6~12, preferably 9.The thickness of high temperature P-type layer 70 can be 80nm~800nm, preferably 440nm;It is high
The doping concentration of P-type dopant can be 10 in warm P-type layer 7019/cm3~1020/cm3, preferably 5*1019cm-3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include undoped gallium nitride 81,
Undoped gallium nitride layer 81 is arranged between buffer layer 20 and n type semiconductor layer 30, to alleviate between substrate and n type semiconductor layer
Lattice mismatch.
Further, the thickness of undoped gallium nitride layer 81 can be 0.4 μm~4.8 μm, preferably 2.6 μm.
In specific implementation, buffer layer is the gallium nitride of the layer of low-temperature epitaxy on substrate first, therefore also referred to as
For low temperature buffer layer.The longitudinal growth for carrying out gallium nitride in low temperature buffer layer again will form multiple mutually independent three-dimensional islands
Structure, referred to as three-dimensional nucleating layer;Then gallium nitride is carried out between each three-dimensional island structure on all three-dimensional island structures
Cross growth, form two-dimension plane structure, referred to as two-dimentional retrieving layer;It is finally one layer of high growth temperature thicker on two-dimensional growth layer
Gallium nitride, referred to as high temperature buffer layer.Three-dimensional nucleating layer, two-dimentional retrieving layer and high temperature buffer layer are referred to as not in the present embodiment
Doped gallium nitride layer.
Optionally, as shown in Figure 1, the LED epitaxial slice can also include stress release layer 82, stress release layer
82 are arranged between n type semiconductor layer 30 and active layer 40, to discharge the stress generated in epitaxial process and defect, improve
The growth quality of active layer, and then improve the luminous efficiency of LED.
Specifically, stress release layer 82 may include multiple first sublayers and multiple second sublayers, multiple first sublayers and
Multiple alternately laminated settings of second sublayer;The material of first sublayer can use InGaN, and the material of the second sublayer can be adopted
Use gallium nitride.
Further, the thickness of gallium indium nitride layer can be 1nm~3nm, preferably 2nm;The thickness of gallium nitride layer can be with
For 20nm~40nm, preferably 30nm;The quantity of gallium indium nitride layer and the quantity of gallium nitride layer are identical, and the quantity of gallium nitride layer can
Think 3~9, preferably 6.
Optionally, as shown in Figure 1, the LED epitaxial slice can also include p-type contact layer 83, P type contact layer 83
It is laid in high temperature P-type layer 70, to form ohm between the electrode or transparent conductive film that are formed in chip fabrication technique
Contact.
Specifically, the material of p-type contact layer 83 can be using the InGaN of p-type doping.
Further, the thickness of p-type contact layer 83 can be 5nm~200nm, preferably 102.5nm;P type contact layer 83
The doping concentration of middle P-type dopant can be 1021/cm3~1022/cm3, preferably 6*1021/cm3。
The embodiment of the invention provides a kind of growing methods of gallium nitride based LED epitaxial slice, are suitable for growth figure
Gallium nitride based LED epitaxial slice shown in 1.Fig. 2 is gallium nitride based light emitting diode extension provided in an embodiment of the present invention
The flow chart of the growing method of piece, referring to fig. 2, which includes:
Step 201: a substrate is provided.
Optionally, which may include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), in hydrogen atmosphere to substrate carry out 6 minutes~
It makes annealing treatment within 10 minutes (preferably 8 minutes);
Nitrogen treatment is carried out to substrate.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer
Long quality.
Step 202: successively grown buffer layer, N-type layer, active layer, low temperature P-type layer, electronic barrier layer and height on substrate
Warm P-type layer.
Wherein, the material of low temperature P-type layer uses the aluminium gallium nitride alloy of p-type doping, and the material of electronic barrier layer is adulterated using p-type
Aluminium indium gallium nitrogen layer.
The embodiment of the present invention utilizes the gesture of aluminium component by the way that the material of low temperature P-type layer is changed to the aluminium gallium nitride alloy that p-type is adulterated
It builds higher, the barrier height of low temperature P-type layer is promoted, it is possible to prevente effectively from the electron transition that provides of n type semiconductor layer is to low temperature P
Non-radiative recombination is carried out with the hole in low temperature P-type layer in type layer, and then the non-radiative recombination of electrons and holes is avoided to influence electricity
The radiation recombination in son and hole shines, and improves the luminous efficiency of LED.And low temperature P-type layer still uses p-type to adulterate, and it can also
The luminous hole of radiation recombination is carried out in injection active layer with electronics to provide, increases in active layer and carries out radiation recombination with electronics
Luminous number of cavities increases the recombination luminescence efficiency of electrons and holes in active layer, further improves the luminous effect of LED
Rate.The material of electronic barrier layer is changed to the aluminium indium gallium nitrogen layer of p-type doping simultaneously, and the potential barrier using indium component is lower, and electronics is hindered
The barrier height of barrier reduces, and avoids the potential barrier between active layer and p type semiconductor layer too high and influences the hole of high temperature P-type layer
It injects in active layer and shines with electronics progress radiation recombination, to avoid causing negatively influencing to the luminous efficiency of LED, be equivalent to
Improve the luminous efficiency of LED.
Specifically, which may include:
The first step, using physical vapour deposition (PVD) (English: Physical Vapor Deposition, abbreviation: PVD) technology
Buffer layer is formed on the substrate;
Second step, controlled at 900 DEG C~1180 DEG C (preferably 1040 DEG C), pressure is 30torr~480torr
(preferably 255torr), grows n type semiconductor layer on the buffer layer;
Third step grows active layer on n type semiconductor layer;Wherein, the growth temperature of Quantum Well is 700 DEG C~890 DEG C
(preferably 795 DEG C), pressure are 30torr~600torr (preferably 345torr);Quantum build growth temperature be 800 DEG C~
980 DEG C (preferably 890 DEG C), pressure is 10torr~580torr (preferably 395torr);
4th step, controlled at 500 DEG C~800 DEG C (preferably 675 DEG C), pressure is that 50torr~500torr is (excellent
It is selected as 300torr), the growing low temperature P-type layer on active layer;
5th step, controlled at 800 DEG C~1050 DEG C (preferably 850 DEG C), pressure is that 30torr~300torr is (excellent
It is selected as 250torr), electronic barrier layer is grown in low temperature P-type layer;
6th step, controlled at 750 DEG C~1050 DEG C (preferably 900 DEG C), pressure is that 50torr~450torr is (excellent
It is selected as 250torr), high temperature P-type layer is grown on electronic barrier layer.
Optionally, after the first step, which can also include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 400torr~600torr (preferably
500torr), the in-situ annealing carried out 5 minutes~10 minutes (preferably 8 minutes) to buffer layer is handled.
Optionally, before second step, which can also include:
Undoped gallium nitride layer is grown on the buffer layer.
Correspondingly, n type semiconductor layer is grown on undoped gallium nitride layer.
Specifically, undoped gallium nitride layer is grown on the buffer layer, may include:
Controlled at 800 DEG C~1180 DEG C (preferably 990 DEG C), pressure be 120torr~600torr (preferably
360torr), undoped gallium nitride layer is grown on the buffer layer.
Optionally, before third step, which can also include:
The growth stress releasing layer on n type semiconductor layer.
Correspondingly, active layer is grown on stress release layer.
Specifically, the growth stress releasing layer on n type semiconductor layer may include:
Controlled at 550 DEG C~900 DEG C (preferably 755 DEG C), pressure be 50torr~500torr (preferably
400torr), the growth stress releasing layer on n type semiconductor layer.
Optionally, after the 6th step, which can also include:
The growing P-type contact layer in high temperature P-type layer.
Specifically, the growing P-type contact layer in high temperature P-type layer may include:
Controlled at 800 DEG C~1150 DEG C (preferably 975 DEG C), pressure be 50torr~300torr (preferably
175torr), the growing P-type contact layer in high temperature P-type layer.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 500 DEG C~900 DEG C it is (excellent
It is selected as 700 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, so
The temperature of epitaxial wafer is reduced to room temperature again afterwards.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer.With trimethyl when realization
As gallium source, high pure nitrogen is mixed as indium source, trimethyl aluminium as silicon source, N-type as nitrogen source, trimethyl indium for gallium or trimethyl second
Miscellaneous dose of selection silane, P-type dopant select two luxuriant magnesium.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of gallium nitride based LED epitaxial slice, the gallium nitride based LED epitaxial slice includes substrate, buffering
Layer, N-type layer, active layer, low temperature P-type layer, electronic barrier layer and high temperature P-type layer, it is the buffer layer, the N-type layer, described active
Layer, the low temperature P-type layer, the electronic barrier layer and the high temperature P-type layer stack gradually over the substrate, and feature exists
In the material of the low temperature P-type layer uses the aluminium gallium nitride alloy of p-type doping, and the material of the electronic barrier layer is using p-type doping
Aluminium indium gallium nitrogen layer.
2. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that in the low temperature P-type layer
The molar content of aluminium component is less than the molar content of aluminium component in the electronic barrier layer.
3. gallium nitride based LED epitaxial slice according to claim 2, which is characterized in that in the low temperature P-type layer
The molar content of aluminium component is 0.05~0.1.
4. gallium nitride based LED epitaxial slice according to claim 2, which is characterized in that in the electronic barrier layer
The molar content of aluminium component is 0.1~0.5.
5. gallium nitride based LED epitaxial slice according to any one of claims 1 to 4, which is characterized in that the electricity
The molar content of indium component is 0.05~0.3 in sub- barrier layer.
6. gallium nitride based LED epitaxial slice according to any one of claims 1 to 4, which is characterized in that described low
The doping concentration of P-type dopant is higher than the doping concentration of P-type dopant in the high temperature P-type layer in warm P-type layer.
7. gallium nitride based LED epitaxial slice according to claim 6, which is characterized in that P in the low temperature P-type layer
The doping concentration of type dopant is 1020/cm3~1021/cm3。
8. gallium nitride based LED epitaxial slice according to any one of claims 1 to 4, which is characterized in that the electricity
Doping concentration of the doping concentration of P-type dopant lower than P-type dopant in the high temperature P-type layer in sub- barrier layer.
9. gallium nitride based LED epitaxial slice according to claim 8, which is characterized in that in the electronic barrier layer
The doping concentration of P-type dopant is 1017/cm3~1018/cm3。
10. a kind of growing method of gallium nitride based LED epitaxial slice, which is characterized in that the growing method includes:
One substrate is provided;
Successively grown buffer layer, N-type layer, active layer, low temperature P-type layer, electronic barrier layer and high temperature P-type layer over the substrate;
Wherein, the material of the low temperature P-type layer uses the aluminium gallium nitride alloy of p-type doping, and the material of the electronic barrier layer uses p-type
The aluminium indium gallium nitrogen layer of doping.
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CN116154059A (en) * | 2023-04-04 | 2023-05-23 | 江西兆驰半导体有限公司 | Gallium nitride light-emitting diode epitaxial structure, LED and preparation method thereof |
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