CN105206714A - GaN-based LED epitaxy structure and preparation method thereof - Google Patents
GaN-based LED epitaxy structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 50
- 238000000407 epitaxy Methods 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 45
- 230000008569 process Effects 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims description 27
- 238000005036 potential barrier Methods 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 abstract 2
- 230000008859 change Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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Abstract
The invention provides a GaN-based LED epitaxy structure and a preparation method thereof. The method comprises the following steps: providing a growth substrate, and growing a nucleating layer on the growth substrate; growing an undoped GaN layer on the nucleating layer under a condition of linear-gradient growth pressure or a condition of the growth pressure with linear gradient and pressure maintaining being combined; growing an N-type GaN layer on the undoped GaN layer; growing an InGaN/ GaN superlattice quantum well structure on the N-type GaN layer; growing an InGaN/ GaN multi-quantum-well luminescent layer structure on the InGaN/ GaN superlattice quantum well structure; growing an AlGaN layer, a low-temperature P-type layer and a P-type electron blocking layer on the InGaN/ GaN multi-quantum-well luminescent layer structure in sequence; and growing a P-type GaN layer on the P-type electron blocking layer. Warpage degree of the epitaxy structure in the growing process can be changed by adjusting the growth pressure conditions; and the method is large in amplitude in adjusting the warpage degree, so that it is convenient to find an appropriate warpage degree to enable the epitaxy structure to be well matched with a carrier disc when growing the multi-quantum-well luminescent layer structure, and wavelength uniformity of the single epitaxy structure is effectively improved.
Description
Technical field
The invention belongs to semiconductor light emitting field, particularly relate to a kind of GaN base LED epitaxial structure and preparation method thereof.
Background technology
GaN base LED range of application is more and more wider, and also more and more higher at manufacture process entails to LED epitaxy technique, its epitaxial structures monolithic wavelength uniformity is exactly a very important aspect.When the wavelength uniformity of epitaxial structure and its growth Multiple Quantum Well, the surface temperature uniformity of epitaxial structure is closely bound up, and epitaxial structure surface temperature is relevant with the exposure level of load plate, difference due to epitaxial loayer GaN and growth substrates sapphire lattice constant and thermal coefficient of expansion causes epitaxial structure can there is warpage in various degree in growth course, if the bad of epitaxial structure warpage coupling when load plate and growth Multiple Quantum Well has very large impact to wavelength uniformity.
In prior art, a kind of method is that GaN base LED extension has good coupling mainly through the thickness and Al component adjusting resilient coating to change epitaxial structure and load plate when stress makes growth Multiple Quantum Well, another method is make epitaxial structure when itself and growth Multiple Quantum Well have good coupling by the design of load plate, above two kinds of methods well can improve the problem of epitaxial structure wavelength uniformity, but along with PSS growth substrates (graphic sapphire growth substrates) is to the trend development of large bottom width and high depth, the warpage of epitaxial structure is increasing, more and more limited by the Adjustment effect of resilient coating, the design of load plate generally needs the time comparatively of a specified duration in addition, and the technological level of load plate producer also has certain restriction simultaneously.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of GaN base LED epitaxial structure and preparation method thereof, for solving in prior art because the trend of PSS growth substrates to large bottom width and high depth finds, the warpage of epitaxial structure is increasing, the effect of being mated with load plate by resilient coating adjustment Multiple Quantum Well is more and more limited, and the design of load plate is consuming time comparatively of a specified duration, and technological level also has the problem of a definite limitation.
For achieving the above object and other relevant objects, the invention provides a kind of preparation method of GaN base LED epitaxial structure, described preparation method at least comprises the following steps:
Growth substrates is provided, described growth substrates grows into stratum nucleare;
On described nucleating layer, unadulterated GaN layer is grown under the growth pressure condition of linear gradient or under the growth pressure condition that combines with pressurize of linear gradient;
Described unadulterated GaN layer grows N-type GaN layer;
Growing InGaN/GaN superlattice quantum well structure in described N-type GaN layer;
Growing InGaN/GaN multiple quantum well light emitting Rotating fields in described InGaN/GaN superlattice quantum well structure;
Described InGaN/GaN multiple quantum well light emitting Rotating fields grows AlGaN layer, low temperature P-type layer and P-type electron barrier layer successively;
Growth P-type GaN layer in described P-type electron barrier layer.
As a kind of preferred version of the preparation method of GaN base LED epitaxial structure of the present invention, described growth substrates is Sapphire Substrate, GaN substrate, silicon substrate or silicon carbide substrates.
As a kind of preferred version of the preparation method of GaN base LED epitaxial structure of the present invention, the growth temperature of described nucleating layer is 450 DEG C ~ 650 DEG C; The thickness of described nucleating layer is 15nm ~ 50nm.
As a kind of preferred version of the preparation method of GaN base LED epitaxial structure of the present invention, grow in the process of described unadulterated GaN layer, growth pressure by the first pressure to the second pressure linear gradient.
As a kind of preferred version of the preparation method of GaN base LED epitaxial structure of the present invention, the process growing described unadulterated GaN layer comprises the first pressure maintaining period, and described first pressure maintaining period is for keeping described first pressure, described second pressure or the 3rd pressure between described first pressure and described second pressure.
As a kind of preferred version of the preparation method of GaN base LED epitaxial structure of the present invention, grow in the process of described unadulterated GaN layer and also comprise the second pressure maintaining period, described second pressure maintaining period is for keeping the first pressure, described second pressure or described 3rd pressure, and described second pressure maintaining period keeps different pressure from described first pressure maintaining period.
As a kind of preferred version of the preparation method of GaN base LED epitaxial structure of the present invention, grow in the process of described unadulterated GaN layer and also comprise the 3rd pressure maintaining period, described 3rd pressure maintaining period is for keeping described first pressure, described second pressure or described 3rd pressure, and described 3rd pressure maintaining period keeps different pressure respectively from described first pressure maintaining period and described second pressure maintaining period.
As a kind of preferred version of the preparation method of GaN base LED epitaxial structure of the present invention, described first pressure and described second pressure are positioned within the pressure limit of 50torr ~ 650torr; Described first pressure is greater than described second pressure, and the pressure differential of described first pressure and described second pressure is 50torr ~ 600torr.
As a kind of preferred version of the preparation method of GaN base LED epitaxial structure of the present invention, described first pressure and described second pressure are positioned within the pressure limit of 50torr ~ 650torr; Described first pressure is less than described second pressure, and the pressure differential of described first pressure and described second pressure is 50torr ~ 600torr.
As a kind of preferred version of the preparation method of GaN base LED epitaxial structure of the present invention, the growth temperature of described unadulterated GaN layer is 900 DEG C ~ 1200 DEG C, and the thickness of described unadulterated GaN layer is 1.5 μm ~ 4.5 μm.
As a kind of preferred version of the preparation method of GaN base LED epitaxial structure of the present invention, the growth temperature of described N-type GaN layer is 1000 DEG C ~ 1200 DEG C, and the thickness of described N-type GaN layer is 1.5 μm ~ 4.5 μm; Doped chemical in described N-type GaN layer is the doping content of Si, Si is 1e18cm
-3~ 3e19cm
-3.
As a kind of preferred version of the preparation method of GaN base LED epitaxial structure of the present invention, the growth temperature of described InGaN/GaN superlattice quantum well structure is 700 DEG C ~ 900 DEG C; The cycle logarithm of described InGaN/GaN superlattice quantum well structure is 3 ~ 30; In InGaN potential well, the molar content of In component is 1% ~ 5%; The thickness of InGaN potential well is the thickness of 1nm ~ 4nm, GaN potential barrier is 1nm ~ 9nm.
As a kind of preferred version of the preparation method of GaN base LED epitaxial structure of the present invention, the growth temperature of described InGaN/GaN multiple quantum well light emitting Rotating fields is 700 DEG C ~ 900 DEG C; The cycle logarithm of described InGaN/GaN multiple quantum well light emitting Rotating fields is 5 ~ 18; In InGaN potential well, the molar content of In component is 15% ~ 20%; The thickness of InGaN potential well is the thickness of 2nm ~ 4nm, GaN potential barrier is 3nm ~ 15nm.
As a kind of preferred version of the preparation method of GaN base LED epitaxial structure of the present invention, in described AlGaN layer, the molar content of Al component is 2% ~ 20%, and the thickness range of described AlGaN layer is 20nm ~ 35nm; Described P-type electron barrier layer is P type AlGaN, P type AlInGaN or P type AlGaN/GaN superlattice structure; The thickness range of described P-type electron barrier layer is 30nm ~ 80nm, and the doped chemical in described P-type electron barrier layer is the doping content scope of Mg, Mg is 5e18cm
-3~ 3.5e19cm
-3.
As a kind of preferred version of the preparation method of GaN base LED epitaxial structure of the present invention, the thickness of described P type GaN layer is 30nm ~ 150nm; Doped chemical in described P type GaN layer is the doping content of Mg, Mg is 5e18cm
-3~ 1e20cm
-3.
The present invention also provides a kind of GaN base LED epitaxial structure, and described GaN base LED epitaxial structure comprises from the bottom to top successively: nucleating layer, unadulterated GaN layer, N-type GaN layer, InGaN/GaN superlattice quantum well structure, InGaN/GaN multiple quantum well light emitting Rotating fields, AlGaN layer, low temperature P-type layer, P-type electron barrier layer and P type GaN layer.
As mentioned above, GaN base LED epitaxial structure of the present invention and preparation method thereof, there is following beneficial effect: in the process of the unadulterated GaN layer of growth, the angularity of growth course epitaxial structures can be changed by adjustment growth pressure condition, the amplitude of the method adjustment angularity is larger, being convenient to find suitable angularity to make epitaxial structure when growing multiple quantum well light emitting Rotating fields and load plate can well mate, effectively improving the wavelength uniformity of monolithic epitaxial structure.
Accompanying drawing explanation
Fig. 1 is shown as the flow chart of the preparation method of GaN base LED epitaxial structure of the present invention.
Fig. 2 is shown as the structural representation that in the preparation method of GaN base LED epitaxial structure of the present invention, S1 step presents.
Fig. 3 is shown as the structural representation that in the preparation method of GaN base LED epitaxial structure of the present invention, S2 step presents.
Fig. 4 is shown as the structural representation that in the preparation method of GaN base LED epitaxial structure of the present invention, S3 step presents.
Fig. 5 is shown as the structural representation that in the preparation method of GaN base LED epitaxial structure of the present invention, S4 step presents.
Fig. 6 is shown as the structural representation that in the preparation method of GaN base LED epitaxial structure of the present invention, S5 step presents.
Fig. 7 is shown as the structural representation that in the preparation method of GaN base LED epitaxial structure of the present invention, S6 step presents.
Fig. 8 is shown as the structural representation that in the preparation method of GaN base LED epitaxial structure of the present invention, S7 step presents.
Element numbers explanation
1 growth substrates
2 nucleating layers
3 unadulterated GaN layer
4N type GaN layer
5InGaN/GaN superlattice quantum well structure
6InGaN/GaN multiple quantum well light emitting Rotating fields
7AlGaN layer
8 low temperature P-type layer
9P type electronic barrier layer
10P type GaN layer
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 to Fig. 8 it should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, though only show the assembly relevant with the present invention in diagram but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Refer to Fig. 1, the invention provides a kind of preparation method of GaN base LED epitaxial structure, described preparation method comprises step:
S1: provide growth substrates, described growth substrates grows into stratum nucleare;
S2: grow unadulterated GaN layer under the growth pressure condition of linear gradient or under the growth pressure condition that combines with pressurize of linear gradient on described nucleating layer;
S3: grow N-type GaN layer in described unadulterated GaN layer;
S4: growing InGaN/GaN superlattice quantum well structure in described N-type GaN layer;
S5: growing InGaN/GaN multiple quantum well light emitting Rotating fields in described InGaN/GaN superlattice quantum well structure;
S6: grow AlGaN layer, low temperature P-type layer and P-type electron barrier layer successively on described InGaN/GaN multiple quantum well light emitting Rotating fields;
S7: growth P-type GaN layer in described P-type electron barrier layer.
In step sl, refer to the S1 step in Fig. 1 and Fig. 2, growth substrates 1 is provided, described growth substrates 1 grows into stratum nucleare 2.
Exemplarily, described growth substrates 1 can be but be not limited only to the Sapphire Substrate of applicable GaN and semiconductor epitaxial Material growth thereof, GaN substrate, silicon substrate or silicon carbide substrates.
Exemplarily, the growth temperature of described nucleating layer 2 is 450 DEG C ~ 650 DEG C; The growth thickness of described nucleating layer 2 is 15nm ~ 50nm.
In step s 2, refer to the S2 step in Fig. 1 and Fig. 3, under the growth pressure condition of linear gradient or under the growth pressure condition that combines with pressurize of linear gradient, on described nucleating layer 2, grow unadulterated GaN layer 3.
Exemplarily, under the growth pressure condition of linear gradient, on described nucleating layer 2, unadulterated GaN layer 3 is grown.Concrete, grow in the process of described unadulterated GaN layer 3, growth pressure can by the first pressure to the second pressure linear gradient, wherein, described first pressure can be greater than described second pressure, also can be less than described second pressure, namely growth pressure can by high pressure to low pressure gradual change, also can by low pressure to high-pressure gradual change.
It should be noted that, in the process of the described unadulterated GaN layer 3 of growth, described growth pressure can comprise one by the process of the first pressure to the second pressure linear gradient, also one or more elder generation can be comprised by the first pressure to the second pressure linear gradient, then again by the process of the second pressure to the first pressure linear gradient.
Exemplarily, on described nucleating layer 2, grow unadulterated GaN layer 3 under the growth pressure condition combined with pressurize in linear gradient and comprise following multiple situation:
Concrete, the process growing described unadulterated GaN layer 3 comprises the first pressure maintaining period, described first pressure maintaining period may be used for keeping described first pressure, also may be used for keeping described second pressure, can also be used for remaining in the 3rd pressure between described first pressure and described second pressure.Namely after first can keeping described first pressure certain hour, then by described first pressure to described second pressure linear gradient; Also can first by described first pressure to described second pressure linear gradient, after reaching described second pressure, keep described second pressure certain hour; Can also first by described first pressure to described 3rd pressure linear gradient, after reaching described 3rd pressure, after keeping described 3rd pressure certain hour, then by described 3rd pressure to described second pressure linear gradient.Wherein, described first pressure can be greater than described second pressure, also can be less than described second pressure; Described 3rd pressure can for being positioned at the arbitrary pressure between described first pressure and described second pressure, and preferably, in the present embodiment, described 3rd pressure is be positioned at the pressure in the middle of described first pressure and described second pressure.
It should be noted that, in the process of the described unadulterated GaN layer 3 of growth, described growth pressure can comprise one first remain on the first pressure certain hour after, then by the process of the first pressure to the second pressure linear gradient; Also can comprise one or more first remain on the first pressure certain hour after, then by the first pressure to the second pressure linear gradient, then again by the process of the second pressure to the first pressure linear gradient; An elder generation can also be comprised by described first pressure to described second pressure linear gradient, after reaching described second pressure, keep the process of described second pressure certain hour; One or more elder generation can also be comprised by described first pressure to described second pressure linear gradient, after reaching described second pressure, after keeping described second pressure certain hour, then by the process of described second pressure to described first pressure linear gradient; An elder generation can also be comprised by described first pressure to described 3rd pressure linear gradient, after reaching described 3rd pressure, after keeping described 3rd pressure certain hour, then by described 3rd pressure to described second pressure linear gradient; One or more elder generation can also be comprised by described first pressure to described 3rd pressure linear gradient, after reaching described 3rd pressure, after keeping described 3rd pressure certain hour, again by described 3rd pressure to described second pressure linear gradient, then again by the process of described second pressure to described first pressure linear gradient.
Concrete, grow in the process of described unadulterated GaN layer 3 and also comprise the second pressure maintaining period, described second pressure maintaining period is for keeping the first pressure, described second pressure or described 3rd pressure, and described second pressure maintaining period keeps different pressure from described first pressure maintaining period.Namely, after first can keeping described first pressure certain hour, then by described first pressure to described second pressure linear gradient, after reaching described second pressure, described second pressure certain hour is kept; Also after first can keeping described first pressure certain hour, again by described first pressure to described 3rd pressure linear gradient, after reaching described 3rd pressure, after keeping described 3rd pressure certain hour, then by described 3rd pressure to described second pressure linear gradient; Can also first by described first pressure to described 3rd pressure linear gradient, after reaching described 3rd pressure, after keeping described 3rd pressure certain hour, then by described 3rd pressure to described second pressure linear gradient, after reaching described second pressure, keep described second pressure certain hour.Wherein, described first pressure can be greater than described second pressure, also can be less than described second pressure; Described 3rd pressure can for being positioned at the arbitrary pressure between described first pressure and described second pressure, and preferably, in the present embodiment, described 3rd pressure is be positioned at the pressure in the middle of described first pressure and described second pressure.
It should be noted that, in the process of the described unadulterated GaN layer 3 of growth, described growth pressure can comprise one first keep described first pressure certain hour after, again by described first pressure to described second pressure linear gradient, after reaching described second pressure, keep the process of described second pressure certain hour; Also can comprise one or more first keep described first pressure certain hour after, again by described first pressure to described second pressure linear gradient, after reaching described second pressure, after keeping described second pressure certain hour, then there is described second pressure to the process of described first pressure linear gradient; Can also comprise one first keep described first pressure certain hour after, again by described first pressure to described 3rd pressure linear gradient, after reaching described 3rd pressure, after keeping described 3rd pressure certain hour, then by the process of described 3rd pressure to described second pressure linear gradient; Can also comprise one or more first keep described first pressure certain hour after, again by described first pressure to described 3rd pressure linear gradient, after reaching described 3rd pressure, after keeping described 3rd pressure certain hour, again by described 3rd pressure to described second pressure linear gradient, after reaching described second pressure, then by the process of described second pressure to described first pressure linear gradient; An elder generation can also be comprised by described first pressure to described 3rd pressure linear gradient, after reaching described 3rd pressure, after keeping described 3rd pressure certain hour, again by described 3rd pressure to described second pressure linear gradient, after reaching described second pressure, keep the process of described second pressure certain hour; One or more elder generation can also be comprised by described first pressure to described 3rd pressure linear gradient, after reaching described 3rd pressure, after keeping described 3rd pressure certain hour, again by described 3rd pressure to described second pressure linear gradient, after reaching described second pressure, after keeping described second pressure certain hour, then by the process of described second pressure to described first pressure linear gradient.
Concrete, the 3rd pressure maintaining period is also comprised in the process of long described unadulterated GaN layer 3, described 3rd pressure maintaining period is for keeping described first pressure, described second pressure or described 3rd pressure, and described 3rd pressure maintaining period keeps different pressure respectively from described first pressure maintaining period and described second pressure maintaining period.Namely after first keeping described first pressure certain hour, by described first pressure to described 3rd pressure linear gradient, after reaching described 3rd pressure, after keeping described 3rd pressure certain hour, again by described 3rd pressure to described second pressure linear gradient, after reaching described second pressure, keep described second pressure certain hour.Wherein, described first pressure can be greater than described second pressure, also can be less than described second pressure; Described 3rd pressure can for being positioned at the arbitrary pressure between described first pressure and described second pressure, and preferably, in the present embodiment, described 3rd pressure is be positioned at the pressure in the middle of described first pressure and described second pressure.
It should be noted that, in the process of the described unadulterated GaN layer 3 of growth, described growth pressure can comprise one first keep described first pressure certain hour after, by described first pressure to described 3rd pressure linear gradient, after reaching described 3rd pressure, after keeping described 3rd pressure certain hour, then by described 3rd pressure to described second pressure linear gradient, after reaching described second pressure, keep the process of described second pressure certain hour, also can comprise one or more first keep described first pressure certain hour after, by described first pressure to described 3rd pressure linear gradient, after reaching described 3rd pressure, after keeping described 3rd pressure certain hour, again by described 3rd pressure to described second pressure linear gradient, after reaching described second pressure, after keeping described second pressure certain hour, then by the process of described second pressure to described first pressure linear gradient, can also comprise one or more first keep described first pressure certain hour after, by described first pressure to described 3rd pressure linear gradient, after reaching described 3rd pressure, after keeping described 3rd pressure certain hour, again by described 3rd pressure to described second pressure linear gradient, after reaching described second pressure, after keeping described second pressure certain hour, again by described second pressure to described 3rd pressure linear gradient, after reaching described 3rd pressure, after keeping described 3rd pressure certain hour, again by the process of described 3rd pressure to described first pressure linear gradient.
What needs further illustrated is, the dwell time of described first pressure maintaining period, described second pressure maintaining period and described 3rd pressure maintaining period can be equal, also can not wait, preferably, in the present embodiment, the dwell time of described first pressure maintaining period, described second pressure maintaining period and described 3rd pressure maintaining period is equal.
Exemplarily, the size of described first pressure and described second pressure can need to set according to actual process, preferably, in the present embodiment, described first pressure and described second pressure are positioned within the pressure limit of 50torr ~ 650torr, and the pressure differential of described first pressure and described second pressure is 50torr ~ 600torr.
Exemplarily, the growth temperature of described unadulterated GaN layer 3 is 900 DEG C ~ 1200 DEG C; The growth thickness of described unadulterated GaN layer 3 is 1.5 μm ~ 4.5 μm.
In step s3, refer to the S3 step in Fig. 1 and Fig. 4, described unadulterated GaN layer 3 grows N-type GaN layer 4.
Exemplarily, the growth temperature of described N-type GaN layer 4 is 900 DEG C ~ 1200 DEG C; The growth thickness of described N-type GaN layer 4 is 1.5 μm ~ 4.5 μm.
Doped chemical in described N-type GaN layer 4 is the doping content of Si, Si is 1e18cm
-3~ 3e19cm
-3.
In step s 4 which, refer to the S4 step in Fig. 1 and Fig. 5, growing InGaN/GaN superlattice quantum well structure 5 in described N-type GaN layer 4.
Exemplarily, described InGaN/GaN superlattice quantum well structure 5 is alternately made up of InGaN potential well and GaN potential barrier, a described InGaN potential well and a described GaN potential barrier form one-period pair, and internal at same period, described GaN potential barrier is positioned on described InGaN potential well; Preferably, in the present embodiment, described InGaN/GaN superlattice quantum well structure 5 comprises 3 ~ 30 described cycles pair.
Exemplarily, the growth temperature of described InGaN/GaN superlattice quantum well structure 5 is 700 DEG C ~ 900 DEG C; The thickness of described InGaN potential well is 1nm ~ 4nm, and the thickness of described GaN potential barrier is 1nm ~ 9nm; In described InGaN potential well, the molar content of In component is 1% ~ 5%.
In step s 5, refer to the S5 step in Fig. 1 and Fig. 6, growing InGaN/GaN multiple quantum well light emitting Rotating fields 6 in described InGaN/GaN superlattice quantum well structure 5.
Exemplarily, described InGaN/GaN multiple quantum well light emitting Rotating fields 6 is alternately made up of InGaN potential well and GaN potential barrier, a described InGaN potential well and a described GaN potential barrier form one-period pair, and internal at same period, described GaN potential barrier is positioned on described InGaN potential well; Preferably, in the present embodiment, described InGaN/GaN multiple quantum well light emitting Rotating fields 6 comprises 5 ~ 18 described cycles pair.
Exemplarily, the growth temperature of described InGaN/GaN multiple quantum well light emitting Rotating fields 6 is 700 DEG C ~ 900 DEG C; The thickness of described InGaN potential well is 2nm ~ 4nm, and the thickness of described GaN potential barrier is 3nm ~ 15nm; In described InGaN potential well, the molar content of In component is 15% ~ 20%.
In step s 6, refer to the S6 step in Fig. 1 and Fig. 7, described InGaN/GaN multiple quantum well light emitting Rotating fields 6 grows AlGaN layer 7, low temperature P-type layer 8 and P-type electron barrier layer 9 successively.
Exemplarily, the growth temperature of described AlGaN layer 7 is 850 DEG C ~ 900 DEG C; In described AlGaN layer 7, the constituent content of Al is 2% ~ 20%; The thickness of described AlGaN layer 7 is 20nm ~ 35nm.
Exemplarily, described low temperature P-type layer 8 is low temperature P type AlInGaN layer, and the growth temperature of described low temperature P-type layer 7 is 700 DEG C ~ 800 DEG C.
Exemplarily, described P-type electron barrier layer 9 can be but be not limited only to P type AlGaN layer, P type AlInGaN layer or P type AlGaN/GaN superlattice structure; The growth temperature of described P-type electron barrier layer 9 is 900 DEG C ~ 950 DEG C; The thickness of described P-type electron barrier layer 9 is 30nm ~ 80nm; Doped chemical in described P-type electron barrier layer 9 is the doping content of Mg, Mg is 5e18cm
-3~ 3.5e19cm
-3.
In the step s 7, refer to the S7 step in Fig. 1 and Fig. 8, growth P-type GaN layer 10 in described P-type electron barrier layer 9.
Exemplarily, the growth temperature of described P type GaN layer 10 is 950 DEG C ~ 1000 DEG C; The thickness of described P type GaN layer 10 is 30nm ~ 150nm; Doped chemical in described P-type electron barrier layer 10 is the doping content of Mg, Mg is 5e18cm
-1~ 1e20cm
-1.
Please continue to refer to Fig. 8, the present invention also provides a kind of GaN base LED epitaxial structure, described GaN base LED epitaxial structure comprises from the bottom to top successively: nucleation, 2, unadulterated GaN layer 3, N-type GaN layer 4, InGaN/GaN superlattice quantum well structure 5, InGaN/GaN multiple quantum well light emitting Rotating fields 6, AlGaN layer 7, low temperature P-type layer 8, P-type electron barrier layer 9 and P type GaN layer 10.
Exemplarily, described growth substrates 1 can be but be not limited only to the Sapphire Substrate of applicable GaN and semiconductor epitaxial Material growth thereof, GaN substrate, silicon substrate or silicon carbide substrates.
Exemplarily, the growth thickness of described nucleating layer 2 is 15nm ~ 50nm.
Exemplarily, described unadulterated GaN layer 3 is under the growth pressure condition of gradual change or gradual change forms with growing on described nucleating layer 2 under the stable growth pressure condition combined.The growth thickness of described unadulterated GaN layer 3 is 1.5 μm ~ 4.5 μm.
Exemplarily, the growth thickness of described N-type GaN layer 4 is 1.5 μm ~ 4.5 μm.Doped chemical in described N-type GaN layer 4 is the doping content of Si, Si is 1e18cm
-3~ 3e19cm
-3.
Exemplarily, described InGaN/GaN superlattice quantum well structure 5 is alternately made up of InGaN potential well and GaN potential barrier, a described InGaN potential well and a described GaN potential barrier form one-period pair, and internal at same period, described GaN potential barrier is positioned on described InGaN potential well; Preferably, in the present embodiment, described InGaN/GaN superlattice quantum well structure 5 comprises 3 ~ 30 described cycles pair.The thickness of described InGaN potential well is 1nm ~ 4nm, and the thickness of described GaN potential barrier is 1nm ~ 9nm; In described InGaN potential well, the molar content of In component is 1% ~ 5%.
Exemplarily, described InGaN/GaN multiple quantum well light emitting Rotating fields 6 is alternately made up of InGaN potential well and GaN potential barrier, a described InGaN potential well and a described GaN potential barrier form one-period pair, and internal at same period, described GaN potential barrier is positioned on described InGaN potential well; Preferably, in the present embodiment, described InGaN/GaN multiple quantum well light emitting Rotating fields 6 comprises 5 ~ 18 described cycles pair.The thickness of described InGaN potential well is 2nm ~ 4nm, and the thickness of described GaN potential barrier is 3nm ~ 15nm; In described InGaN potential well, the molar content of In component is 15% ~ 20%.
Exemplarily, in described AlGaN layer 7, the constituent content of Al is 2% ~ 20%; The thickness of described AlGaN layer 7 is 20nm ~ 35nm.Exemplarily, described low temperature P-type layer 8 is low temperature P type AlInGaN layer.Described P-type electron barrier layer 9 can be but be not limited only to P type AlGaN layer, P type AlInGaN layer or P type AlGaN/GaN superlattice structure; The thickness of described P-type electron barrier layer 9 is 30nm ~ 80nm; Doped chemical in described P-type electron barrier layer 9 is the doping content of Mg, Mg is 5e18cm
-3~ 3.5e19cm
-3.
Exemplarily, the thickness of described P type GaN layer 10 is 30nm ~ 150nm; Doped chemical in described P-type electron barrier layer 10 is the doping content of Mg, Mg is 5e18cm
-1~ 1e20cm
-1.
In sum, the invention provides a kind of GaN base LED epitaxial structure and preparation method thereof, in the process of the unadulterated GaN layer of growth, the angularity of growth course epitaxial structures can be changed by adjustment growth pressure condition, the amplitude of the method adjustment angularity is larger, being convenient to find suitable angularity to make epitaxial structure when growing multiple quantum well light emitting Rotating fields and load plate can well mate, effectively improving the wavelength uniformity of monolithic epitaxial structure.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (16)
1. a preparation method for GaN base LED epitaxial structure, is characterized in that, described preparation method comprises:
Growth substrates is provided, described growth substrates grows into stratum nucleare;
On described nucleating layer, unadulterated GaN layer is grown under the growth pressure condition of linear gradient or under the growth pressure condition that combines with pressurize of linear gradient;
Described unadulterated GaN layer grows N-type GaN layer;
Growing InGaN/GaN superlattice quantum well structure in described N-type GaN layer;
Growing InGaN/GaN multiple quantum well light emitting Rotating fields in described InGaN/GaN superlattice quantum well structure;
Described InGaN/GaN multiple quantum well light emitting Rotating fields grows AlGaN layer, low temperature P-type layer and P-type electron barrier layer successively;
Growth P-type GaN layer in described P-type electron barrier layer.
2. the preparation method of GaN base LED epitaxial structure according to claim 1, is characterized in that: described growth substrates is Sapphire Substrate, GaN substrate, silicon substrate or silicon carbide substrates.
3. the preparation method of GaN base LED epitaxial structure according to claim 1, is characterized in that: the growth temperature of described nucleating layer is 450 DEG C ~ 650 DEG C; The thickness of described nucleating layer is 15nm ~ 50nm.
4. the preparation method of GaN base LED epitaxial structure according to claim 1, is characterized in that: grow in the process of described unadulterated GaN layer, growth pressure by the first pressure to the second pressure linear gradient.
5. the preparation method of GaN base LED epitaxial structure according to claim 4, it is characterized in that: the process growing described unadulterated GaN layer comprises the first pressure maintaining period, described first pressure maintaining period is for keeping described first pressure, described second pressure or the 3rd pressure between described first pressure and described second pressure.
6. the preparation method of GaN base LED epitaxial structure according to claim 5, it is characterized in that: grow in the process of described unadulterated GaN layer and also comprise the second pressure maintaining period, described second pressure maintaining period is for keeping the first pressure, described second pressure or described 3rd pressure, and described second pressure maintaining period keeps different pressure from described first pressure maintaining period.
7. the preparation method of GaN base LED epitaxial structure according to claim 6, it is characterized in that: grow in the process of described unadulterated GaN layer and also comprise the 3rd pressure maintaining period, described 3rd pressure maintaining period is for keeping described first pressure, described second pressure or described 3rd pressure, and described 3rd pressure maintaining period keeps different pressure respectively from described first pressure maintaining period and described second pressure maintaining period.
8. according to the preparation method of the GaN base LED epitaxial structure described in any one of claim 5 to 7, it is characterized in that: described first pressure and described second pressure are positioned within the pressure limit of 50torr ~ 650torr; Described first pressure is greater than described second pressure, and the pressure differential of described first pressure and described second pressure is 50torr ~ 600torr.
9. according to the preparation method of the GaN base LED epitaxial structure described in any one of claim 5 to 7, it is characterized in that: described first pressure and described second pressure are positioned within the pressure limit of 50torr ~ 650torr; Described first pressure is less than described second pressure, and the pressure differential of described first pressure and described second pressure is 50torr ~ 600torr.
10. the preparation method of GaN base LED epitaxial structure according to claim 1, is characterized in that: the growth temperature of described unadulterated GaN layer is 900 DEG C ~ 1200 DEG C, and the thickness of described unadulterated GaN layer is 1.5 μm ~ 4.5 μm.
The preparation method of 11. GaN base LED epitaxial structure according to claim 1, is characterized in that: the growth temperature of described N-type GaN layer is 1000 DEG C ~ 1200 DEG C, and the thickness of described N-type GaN layer is 1.5 μm ~ 4.5 μm; Doped chemical in described N-type GaN layer is the doping content of Si, Si is 1e18cm
-3~ 3e19cm
-3.
The preparation method of 12. GaN base LED epitaxial structure according to claim 1, is characterized in that: the growth temperature of described InGaN/GaN superlattice quantum well structure is 700 DEG C ~ 900 DEG C; The cycle logarithm of described InGaN/GaN superlattice quantum well structure is 3 ~ 30; In InGaN potential well, the molar content of In component is 1% ~ 5%; The thickness of InGaN potential well is the thickness of 1nm ~ 4nm, GaN potential barrier is 1nm ~ 9nm.
The preparation method of 13. GaN base LED epitaxial structure according to claim 1, is characterized in that: the growth temperature of described InGaN/GaN multiple quantum well light emitting Rotating fields is 700 DEG C ~ 900 DEG C; The cycle logarithm of described InGaN/GaN multiple quantum well light emitting Rotating fields is 5 ~ 18; In InGaN potential well, the molar content of In component is 15% ~ 20%; The thickness of InGaN potential well is the thickness of 2nm ~ 4nm, GaN potential barrier is 3nm ~ 15nm.
The preparation method of 14. GaN base LED epitaxial structure according to claim 1, is characterized in that: in described AlGaN layer, the molar content of Al component is 2% ~ 20%, and the thickness range of described AlGaN layer is 20nm ~ 35nm; Described P-type electron barrier layer is P type AlGaN, P type AlInGaN or P type AlGaN/GaN superlattice structure; The thickness range of described P-type electron barrier layer is 30nm ~ 80nm, and the doped chemical in described P-type electron barrier layer is the doping content scope of Mg, Mg is 5e18cm
-3~ 3.5e19cm
-3.
The preparation method of 15. GaN base LED epitaxial structure according to claim 1, is characterized in that: the thickness of described P type GaN layer is 30nm ~ 150nm; Doped chemical in described P type GaN layer is the doping content of Mg, Mg is 5e18cm
-3~ 1e20cm
-3.
The GaN base LED epitaxial structure that the preparation method of 16. 1 kinds of GaN base LED epitaxial structure according to any one of claim 1 to 15 obtains, it is characterized in that, described GaN base LED epitaxial structure comprises from the bottom to top successively: nucleating layer, unadulterated GaN layer, N-type GaN layer, InGaN/GaN superlattice quantum well structure, InGaN/GaN multiple quantum well light emitting Rotating fields, AlGaN layer, low temperature P-type layer, P-type electron barrier layer and P type GaN layer.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108470805A (en) * | 2018-03-29 | 2018-08-31 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
| CN109065675A (en) * | 2018-06-22 | 2018-12-21 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and its growing method |
| CN112670381A (en) * | 2020-12-23 | 2021-04-16 | 武汉大学 | Light emitting diode with surface non-periodic grating pattern and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020020341A1 (en) * | 2000-08-04 | 2002-02-21 | The Regents Of The University Of California | Method of controlling stress in gallium nitride films deposited on substrates |
| CN104465902A (en) * | 2014-12-12 | 2015-03-25 | 天津三安光电有限公司 | Manufacturing method for light-emitting diode structure |
| CN104617194A (en) * | 2015-02-03 | 2015-05-13 | 映瑞光电科技(上海)有限公司 | Preparation method of GaN-based LED epitaxial structure |
-
2015
- 2015-09-01 CN CN201510551284.8A patent/CN105206714A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020020341A1 (en) * | 2000-08-04 | 2002-02-21 | The Regents Of The University Of California | Method of controlling stress in gallium nitride films deposited on substrates |
| CN104465902A (en) * | 2014-12-12 | 2015-03-25 | 天津三安光电有限公司 | Manufacturing method for light-emitting diode structure |
| CN104617194A (en) * | 2015-02-03 | 2015-05-13 | 映瑞光电科技(上海)有限公司 | Preparation method of GaN-based LED epitaxial structure |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108470805A (en) * | 2018-03-29 | 2018-08-31 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
| CN108470805B (en) * | 2018-03-29 | 2019-10-08 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
| CN109065675A (en) * | 2018-06-22 | 2018-12-21 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and its growing method |
| CN112670381A (en) * | 2020-12-23 | 2021-04-16 | 武汉大学 | Light emitting diode with surface non-periodic grating pattern and preparation method thereof |
| CN112670381B (en) * | 2020-12-23 | 2023-02-28 | 武汉大学 | Light emitting diode with surface non-periodic grating pattern and preparation method thereof |
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