CN102751301A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN102751301A CN102751301A CN2012102113274A CN201210211327A CN102751301A CN 102751301 A CN102751301 A CN 102751301A CN 2012102113274 A CN2012102113274 A CN 2012102113274A CN 201210211327 A CN201210211327 A CN 201210211327A CN 102751301 A CN102751301 A CN 102751301A
- Authority
- CN
- China
- Prior art keywords
- semiconductor substrate
- state image
- jut
- image sensor
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 174
- 239000000758 substrate Substances 0.000 claims abstract description 151
- 239000000463 material Substances 0.000 claims abstract description 33
- 239000000853 adhesive Substances 0.000 abstract description 38
- 230000001070 adhesive effect Effects 0.000 abstract description 38
- 239000007787 solid Substances 0.000 description 74
- 238000000034 method Methods 0.000 description 51
- 239000011521 glass Substances 0.000 description 45
- 239000010410 layer Substances 0.000 description 40
- 238000004519 manufacturing process Methods 0.000 description 30
- 229920005989 resin Polymers 0.000 description 30
- 239000011347 resin Substances 0.000 description 30
- 230000008569 process Effects 0.000 description 26
- 238000013459 approach Methods 0.000 description 22
- 238000005520 cutting process Methods 0.000 description 22
- 238000012545 processing Methods 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 239000011810 insulating material Substances 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 239000012634 fragment Substances 0.000 description 11
- 239000010949 copper Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-AKLPVKDBSA-N silicon-31 atom Chemical compound [31Si] XUIMIQQOPSSXEZ-AKLPVKDBSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (1)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006032664A JP4951989B2 (ja) | 2006-02-09 | 2006-02-09 | 半導体装置 |
JP2006-032664 | 2006-02-09 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006100798958A Division CN101017836A (zh) | 2006-02-09 | 2006-05-16 | 半导体器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102751301A true CN102751301A (zh) | 2012-10-24 |
CN102751301B CN102751301B (zh) | 2015-03-25 |
Family
ID=38333094
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210211327.4A Expired - Fee Related CN102751301B (zh) | 2006-02-09 | 2006-05-16 | 半导体器件 |
CNA2006100798958A Pending CN101017836A (zh) | 2006-02-09 | 2006-05-16 | 半导体器件及其制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006100798958A Pending CN101017836A (zh) | 2006-02-09 | 2006-05-16 | 半导体器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7479627B2 (zh) |
JP (1) | JP4951989B2 (zh) |
KR (1) | KR100773843B1 (zh) |
CN (2) | CN102751301B (zh) |
TW (1) | TWI310605B (zh) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008130834A (ja) * | 2006-11-21 | 2008-06-05 | Mitsubishi Electric Corp | 光モジュール |
US20080136012A1 (en) * | 2006-12-08 | 2008-06-12 | Advanced Chip Engineering Technology Inc. | Imagine sensor package and forming method of the same |
US7911018B2 (en) * | 2007-10-30 | 2011-03-22 | Panasonic Corporation | Optical device and method of manufacturing the same |
JP4799543B2 (ja) * | 2007-12-27 | 2011-10-26 | 株式会社東芝 | 半導体パッケージ及びカメラモジュール |
JP4799542B2 (ja) | 2007-12-27 | 2011-10-26 | 株式会社東芝 | 半導体パッケージ |
JP2009283503A (ja) * | 2008-05-19 | 2009-12-03 | Panasonic Corp | 半導体装置及びその製造方法 |
JP5185019B2 (ja) * | 2008-08-25 | 2013-04-17 | パナソニック株式会社 | 半導体装置及びそれを用いた電子機器 |
US7817344B2 (en) * | 2008-08-28 | 2010-10-19 | Honeywell International Inc. | Systems and methods for micromachined cylindrical lenses |
JP2010114320A (ja) * | 2008-11-07 | 2010-05-20 | Panasonic Corp | 半導体装置 |
JP5178569B2 (ja) | 2009-02-13 | 2013-04-10 | 株式会社東芝 | 固体撮像装置 |
US9142586B2 (en) | 2009-02-24 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for backside illuminated image sensor |
JP2010251558A (ja) | 2009-04-16 | 2010-11-04 | Toshiba Corp | 固体撮像装置 |
CN102782862B (zh) * | 2010-02-26 | 2015-08-26 | 精材科技股份有限公司 | 芯片封装体及其制造方法 |
JP2011187754A (ja) * | 2010-03-10 | 2011-09-22 | Toshiba Corp | 固体撮像装置及びその製造方法 |
US20110292271A1 (en) * | 2010-05-27 | 2011-12-01 | Tzy-Ying Lin | Camera module and fabrication method thereof |
US8454789B2 (en) | 2010-11-05 | 2013-06-04 | Raytheon Company | Disposable bond gap control structures |
US8440543B2 (en) * | 2011-09-19 | 2013-05-14 | Teledyne Scientific & Imaging, Llc | Hybrid circuit structure and partial backfill method for improving thermal cycling reliability of same |
CN102431959B (zh) * | 2011-12-05 | 2015-04-22 | 烟台睿创微纳技术有限公司 | 一种半导体mems芯片封装方法及其封装结构 |
JP6214132B2 (ja) * | 2012-02-29 | 2017-10-18 | キヤノン株式会社 | 光電変換装置、撮像システムおよび光電変換装置の製造方法 |
US20140151095A1 (en) * | 2012-12-05 | 2014-06-05 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board and method for manufacturing the same |
JP2015082547A (ja) | 2013-10-22 | 2015-04-27 | セイコーエプソン株式会社 | 回路モジュール及びその製造方法 |
JP2015211131A (ja) * | 2014-04-25 | 2015-11-24 | ミツミ電機株式会社 | 撮像素子ユニット、撮像装置、及びカメラ付携帯端末 |
US10043847B2 (en) * | 2014-08-26 | 2018-08-07 | Gingy Technology Inc. | Image capturing module and electrical apparatus |
JP2016058532A (ja) * | 2014-09-09 | 2016-04-21 | ソニー株式会社 | 固体撮像素子、並びに、電子機器 |
TWI669810B (zh) * | 2014-09-11 | 2019-08-21 | 日商索尼半導體解決方案公司 | Solid-state imaging device, imaging device, electronic device, and semiconductor device |
US20160104669A1 (en) * | 2014-10-08 | 2016-04-14 | Infineon Technologies Ag | Semiconductor structure with improved metallization adhesion and method for manufacturing the same |
CN105551985A (zh) * | 2016-01-21 | 2016-05-04 | 昆山紫芯微电子科技有限公司 | 一种指纹识别模组的封装方法、指纹识别模组 |
US9859180B2 (en) * | 2016-02-17 | 2018-01-02 | Semiconductor Components Industries, Llc | High reliability wafer level semiconductor packaging |
CN106783716B (zh) * | 2016-12-05 | 2020-03-20 | 厦门市三安集成电路有限公司 | 一种降低易碎基底在半导体制程中破片率的方法 |
JP6685254B2 (ja) * | 2017-03-01 | 2020-04-22 | キヤノン株式会社 | 光電変換装置、センサユニットおよび画像形成装置 |
JP6981033B2 (ja) * | 2017-04-19 | 2021-12-15 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
TWI730682B (zh) * | 2019-06-26 | 2021-06-11 | 同欣電子工業股份有限公司 | 晶片封裝結構及其製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002231919A (ja) * | 2001-02-06 | 2002-08-16 | Olympus Optical Co Ltd | 固体撮像装置及びその製造方法 |
JP2003092394A (ja) * | 2001-09-19 | 2003-03-28 | Sony Corp | 固体撮像装置 |
JP2005286028A (ja) * | 2004-03-29 | 2005-10-13 | Sharp Corp | 固体撮像素子パッケージ、半導体パッケージ、カメラモジュール、及び固体撮像素子パッケージの製造方法 |
CN1705133A (zh) * | 2004-06-01 | 2005-12-07 | 夏普株式会社 | 固态摄像装置、半导体晶片及照相机组件 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3166216B2 (ja) | 1991-07-03 | 2001-05-14 | ソニー株式会社 | オンチップレンズ付固体撮像装置およびその製造方法 |
JPH0541506A (ja) | 1991-08-06 | 1993-02-19 | Sony Corp | マイクロレンズ付固体撮像装置 |
JPH06204442A (ja) * | 1993-01-07 | 1994-07-22 | Matsushita Electron Corp | 固体撮像装置およびその製造方法 |
JPH1065047A (ja) | 1996-08-20 | 1998-03-06 | Tokuyama Corp | 半導体素子搭載用パッケージの製造方法 |
DE19952363A1 (de) * | 1999-10-30 | 2001-05-03 | Bosch Gmbh Robert | Optoelektronischer Empfänger |
JP2002158305A (ja) * | 2000-11-21 | 2002-05-31 | Kyocera Corp | 電子部品収納用パッケージ |
JP4614594B2 (ja) * | 2001-08-28 | 2011-01-19 | 京セラ株式会社 | 電子部品収納用パッケージ |
JP3956199B2 (ja) * | 2002-02-20 | 2007-08-08 | シャープ株式会社 | 固体撮像装置の製造方法およびその製造方法において使用するマスク |
JP2004006596A (ja) * | 2002-03-22 | 2004-01-08 | Toyo Tire & Rubber Co Ltd | 樹脂封止用ダム枠材及び電子部品モジュールの製造方法 |
JP4241160B2 (ja) * | 2002-04-22 | 2009-03-18 | 富士フイルム株式会社 | 固体撮像装置の製造方法 |
JP4443865B2 (ja) * | 2002-06-24 | 2010-03-31 | 富士フイルム株式会社 | 固体撮像装置およびその製造方法 |
US6982470B2 (en) * | 2002-11-27 | 2006-01-03 | Seiko Epson Corporation | Semiconductor device, method of manufacturing the same, cover for semiconductor device, and electronic equipment |
JP4018013B2 (ja) | 2003-03-26 | 2007-12-05 | 富士フイルム株式会社 | 固体撮像装置及び固体撮像装置の製造方法 |
JP2004363380A (ja) | 2003-06-05 | 2004-12-24 | Sanyo Electric Co Ltd | 光半導体装置およびその製造方法 |
JP4551638B2 (ja) * | 2003-08-01 | 2010-09-29 | 富士フイルム株式会社 | 固体撮像装置の製造方法 |
TWI231606B (en) | 2003-11-10 | 2005-04-21 | Shih-Hsien Tseng | Image pickup device and a manufacturing method thereof |
JP2005322851A (ja) | 2004-05-11 | 2005-11-17 | Fuji Photo Film Co Ltd | 固体撮像装置 |
JP2006100763A (ja) * | 2004-09-06 | 2006-04-13 | Fuji Photo Film Co Ltd | 固体撮像装置の製造方法及び接合装置 |
KR100687069B1 (ko) * | 2005-01-07 | 2007-02-27 | 삼성전자주식회사 | 보호판이 부착된 이미지 센서 칩과 그의 제조 방법 |
-
2006
- 2006-02-09 JP JP2006032664A patent/JP4951989B2/ja not_active Expired - Fee Related
- 2006-04-24 US US11/408,970 patent/US7479627B2/en not_active Expired - Fee Related
- 2006-04-25 TW TW095114695A patent/TWI310605B/zh not_active IP Right Cessation
- 2006-05-16 CN CN201210211327.4A patent/CN102751301B/zh not_active Expired - Fee Related
- 2006-05-16 CN CNA2006100798958A patent/CN101017836A/zh active Pending
- 2006-05-16 KR KR1020060043796A patent/KR100773843B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002231919A (ja) * | 2001-02-06 | 2002-08-16 | Olympus Optical Co Ltd | 固体撮像装置及びその製造方法 |
JP2003092394A (ja) * | 2001-09-19 | 2003-03-28 | Sony Corp | 固体撮像装置 |
JP2005286028A (ja) * | 2004-03-29 | 2005-10-13 | Sharp Corp | 固体撮像素子パッケージ、半導体パッケージ、カメラモジュール、及び固体撮像素子パッケージの製造方法 |
CN1705133A (zh) * | 2004-06-01 | 2005-12-07 | 夏普株式会社 | 固态摄像装置、半导体晶片及照相机组件 |
Also Published As
Publication number | Publication date |
---|---|
JP2007214360A (ja) | 2007-08-23 |
KR20070081069A (ko) | 2007-08-14 |
CN102751301B (zh) | 2015-03-25 |
KR100773843B1 (ko) | 2007-11-06 |
JP4951989B2 (ja) | 2012-06-13 |
US20070181792A1 (en) | 2007-08-09 |
TWI310605B (en) | 2009-06-01 |
CN101017836A (zh) | 2007-08-15 |
US7479627B2 (en) | 2009-01-20 |
TW200731518A (en) | 2007-08-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102751301B (zh) | 半导体器件 | |
US7268436B2 (en) | Electronic device with cavity and a method for producing the same | |
KR101301646B1 (ko) | 화상 및 광센서 칩 패키지들 | |
US7303400B2 (en) | Package of a semiconductor device with a flexible wiring substrate and method for the same | |
US6930327B2 (en) | Solid-state imaging device and method of manufacturing the same | |
US7923798B2 (en) | Optical device and method for fabricating the same, camera module using optical device, and electronic equipment mounting camera module | |
JP5324890B2 (ja) | カメラモジュールおよびその製造方法 | |
JP5255246B2 (ja) | チップスケールパッケージ、cmosイメージスケールパッケージおよびcmosイメージスケールパッケージの製造方法 | |
JP5427337B2 (ja) | 半導体装置及びその製造方法、カメラモジュール | |
WO2015176601A1 (zh) | 图像传感器结构及其封装方法 | |
US8729698B2 (en) | Method of manufacturing semiconductor device, semiconductor device and multilayer wafer structure | |
US20090053856A1 (en) | Semiconductor device comprising light-emitting element and light-receiving element, and manufacturing method therefor | |
JP2006216935A (ja) | ウェーハレベルのイメージセンサーモジュール及びその製造方法 | |
JP2010040672A (ja) | 半導体装置およびその製造方法 | |
US11569217B2 (en) | Image sensor package and manufacturing method thereof | |
US20230187409A1 (en) | Multi-chip package and manufacturing method thereof | |
US8003426B2 (en) | Method for manufacturing package structure of optical device | |
CN103325803B (zh) | 图像传感器封装方法及结构、图像传感器模组及形成方法 | |
CN102144292A (zh) | 半导体装置以及其制造方法 | |
JPH03155671A (ja) | 固体撮像装置 | |
WO2023002656A1 (ja) | 半導体パッケージ | |
JP2022145018A (ja) | 遠赤外線センサ用パッケージ及びその製造方法、並びに、遠赤外線センサ及びその製造方法 | |
KR100747610B1 (ko) | 이미지 센서 및 이의 제조 방법 | |
KR20030001009A (ko) | 멀티칩 패키지 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SUOSI FUTURE CO., LTD. Free format text: FORMER OWNER: FUJITSU SEMICONDUCTOR CO., LTD. Effective date: 20150519 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150519 Address after: Yokohama City, Kanagawa Prefecture, Japan Patentee after: Co., Ltd. Suo Si future Address before: Yokohama City, Kanagawa Prefecture, Japan Patentee before: Fujitsu Semiconductor Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150325 Termination date: 20170516 |
|
CF01 | Termination of patent right due to non-payment of annual fee |