CN102741979A - 微机电半导体器件传感器 - Google Patents
微机电半导体器件传感器 Download PDFInfo
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- CN102741979A CN102741979A CN2011800058596A CN201180005859A CN102741979A CN 102741979 A CN102741979 A CN 102741979A CN 2011800058596 A CN2011800058596 A CN 2011800058596A CN 201180005859 A CN201180005859 A CN 201180005859A CN 102741979 A CN102741979 A CN 102741979A
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Images
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
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- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
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- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
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- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
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- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Geometry (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (2)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10150405 | 2010-01-11 | ||
EP10150405.8 | 2010-01-11 | ||
PCT/EP2011/050213 WO2011083162A2 (de) | 2010-01-11 | 2011-01-10 | Mikroelektromechanisches halbleiterbauelement |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102741979A true CN102741979A (zh) | 2012-10-17 |
CN102741979B CN102741979B (zh) | 2015-07-29 |
Family
ID=44305870
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011800058613A Pending CN102741674A (zh) | 2010-01-11 | 2011-01-10 | 微机电半导体器件及其制造方法 |
CN201180005859.6A Active CN102741979B (zh) | 2010-01-11 | 2011-01-10 | 微机电半导体器件传感器 |
CN201180005860.9A Active CN102742012B (zh) | 2010-01-11 | 2011-01-10 | 半导体传感器部件 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011800058613A Pending CN102741674A (zh) | 2010-01-11 | 2011-01-10 | 微机电半导体器件及其制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180005860.9A Active CN102742012B (zh) | 2010-01-11 | 2011-01-10 | 半导体传感器部件 |
Country Status (4)
Country | Link |
---|---|
US (7) | US8975671B2 (zh) |
EP (5) | EP2523895B1 (zh) |
CN (3) | CN102741674A (zh) |
WO (5) | WO2011083160A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106164636A (zh) * | 2014-02-01 | 2016-11-23 | 埃斯梅斯公司 | 用于监测并且调节流体流量的芯片器件及其制造方法 |
CN108467005A (zh) * | 2017-02-09 | 2018-08-31 | 英飞凌科技股份有限公司 | 半导体装置和用于形成半导体装置的方法 |
CN109791084A (zh) * | 2016-09-27 | 2019-05-21 | 罗斯蒙特公司 | 高过压能力硅片压力传感器 |
Families Citing this family (49)
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EP2523895B1 (de) | 2010-01-11 | 2014-06-04 | ELMOS Semiconductor AG | Mikroelektromechanisches halbleiterbauelement |
DE102011081002B4 (de) | 2011-08-16 | 2020-01-16 | Robert Bosch Gmbh | Herstellungsverfahren für ein mikromechanisches Bauteil |
DE102011112935B4 (de) * | 2011-09-13 | 2015-02-12 | Micronas Gmbh | Kraftsensor |
FR2982023B1 (fr) * | 2011-10-26 | 2015-03-06 | Auxitrol Sa | Structure micromecanique a membrane deformable et a protection contre de fortes deformations |
US9021887B2 (en) | 2011-12-19 | 2015-05-05 | Infineon Technologies Ag | Micromechanical semiconductor sensing device |
US9184138B2 (en) * | 2011-12-29 | 2015-11-10 | Stmicroelectronics (Grenoble 2) Sas | Semiconductor integrated device with mechanically decoupled active area and related manufacturing process |
US8590389B2 (en) * | 2012-02-10 | 2013-11-26 | Metrodyne Microsystems Corporation, R.O.C. | MEMS pressure sensor device and manufacturing method thereof |
US20130334531A1 (en) * | 2012-06-15 | 2013-12-19 | Franz Jost | Systems and methods for measuring temperature and current in integrated circuit devices |
WO2014098567A1 (en) * | 2012-12-21 | 2014-06-26 | Mimos Berhad | A pressure sensor |
FR3000841A1 (fr) | 2013-01-09 | 2014-07-11 | St Microelectronics Rousset | Procede de realisation d'un dispositif metallique loge dans un logement ferme au sein d'un circuit integre, et circuit integre correspondant |
US9176018B2 (en) * | 2013-02-22 | 2015-11-03 | Bin Qi | Micromachined ultra-miniature piezoresistive pressure sensor and method of fabrication of the same |
US9156676B2 (en) * | 2013-04-09 | 2015-10-13 | Honeywell International Inc. | Sensor with isolated diaphragm |
DE102014006037A1 (de) | 2013-04-29 | 2014-10-30 | Elmos Semiconductor Ag | MEMS Sensor für schwierige Umgebungen und Medien |
TWI514938B (zh) * | 2013-12-26 | 2015-12-21 | Ind Tech Res Inst | 撓性電子模組 |
US9941472B2 (en) | 2014-03-10 | 2018-04-10 | International Business Machines Corporation | Piezoelectronic device with novel force amplification |
US9251884B2 (en) | 2014-03-24 | 2016-02-02 | International Business Machines Corporation | Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence |
US9663354B2 (en) | 2014-05-14 | 2017-05-30 | Infineon Technologies Ag | Mechanical stress-decoupling in semiconductor device |
CN104034454B (zh) * | 2014-06-13 | 2016-05-25 | 江苏多维科技有限公司 | 一种用于多物理量测量的传感器芯片及其制备方法 |
US9513242B2 (en) | 2014-09-12 | 2016-12-06 | Honeywell International Inc. | Humidity sensor |
CN105527042B (zh) * | 2014-10-15 | 2020-06-05 | 浙江盾安人工环境股份有限公司 | 压力传感器及其制造方法 |
US9263664B1 (en) * | 2014-10-31 | 2016-02-16 | International Business Machines Corporation | Integrating a piezoresistive element in a piezoelectronic transistor |
GB2532806A (en) * | 2014-11-25 | 2016-06-01 | Continental Automotive Systems Us Inc | Piezoresistive pressure sensor device |
EP3256831B1 (en) * | 2015-02-12 | 2019-10-16 | Honeywell International Inc. | Micro mechanical devices with an improved recess or cavity structure |
JP6341190B2 (ja) * | 2015-02-16 | 2018-06-13 | 株式会社デンソー | 半導体装置の製造方法 |
US10677747B2 (en) | 2015-02-17 | 2020-06-09 | Honeywell International Inc. | Humidity sensor |
US10060813B2 (en) | 2015-09-29 | 2018-08-28 | Rosemount Inc. | High over-pressure capable silicon die pressure sensor |
US9719872B2 (en) | 2015-09-29 | 2017-08-01 | Rosemount Inc. | High over-pressure capable silicon die pressure sensor with extended pressure signal output |
JP6300773B2 (ja) * | 2015-10-23 | 2018-03-28 | 三菱電機株式会社 | 半導体圧力センサ |
US9804046B2 (en) * | 2015-10-27 | 2017-10-31 | DunAn Sensing, LLC | Pressure sensor with support structure for non-silicon diaphragm |
US9899527B2 (en) * | 2015-12-31 | 2018-02-20 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with gaps |
EP3211393A1 (en) * | 2016-02-29 | 2017-08-30 | ETH Zürich | Mems device using a released device layer as membrane |
US9964458B2 (en) | 2016-05-12 | 2018-05-08 | Continental Automotive Systems, Inc. | Pressure sensor device with anchors for die shrinkage and high sensitivity |
EP3244201B1 (en) | 2016-05-13 | 2021-10-27 | Honeywell International Inc. | Fet based humidity sensor with barrier layer protecting gate dielectric |
DE102016210384A1 (de) * | 2016-06-13 | 2017-12-14 | Robert Bosch Gmbh | Mikromechanisches Bauteil und Verfahren zum Herstellen eines mikromechanischen Bauteils |
DE102016111836B4 (de) * | 2016-06-28 | 2024-02-15 | Infineon Technologies Ag | Halbleiterbauelemente und Verfahren zum Bilden eines Halbleiterbauelements |
JP6555214B2 (ja) * | 2016-08-25 | 2019-08-07 | 株式会社デンソー | 圧力センサ |
US10203258B2 (en) * | 2016-09-26 | 2019-02-12 | Rosemount Inc. | Pressure sensor diaphragm with overpressure protection |
CN106556386B (zh) * | 2016-11-15 | 2019-11-08 | 东南大学 | 硅基微壳体谐振器及其制备方法 |
IT201700045285A1 (it) * | 2017-04-26 | 2018-10-26 | St Microelectronics Srl | Trasduttore microelettromeccanico basato su trincea e metodo di fabbricazione del trasduttore microelettromeccanico |
DE102017210691A1 (de) * | 2017-06-26 | 2018-12-27 | Robert Bosch Gmbh | Verfahren zur Herstellung von mikromechanischen Sensoren |
US10809621B2 (en) * | 2017-12-21 | 2020-10-20 | Commissariat à l'énergie atomique et aux énergies alternatives | Process for the exposure of a region on one face of an electronic device |
IT201800001092A1 (it) * | 2018-01-16 | 2019-07-16 | St Microelectronics Srl | Sensore di pressione piezoresistivo microelettromeccanico con capacita' di auto-diagnosi e relativo procedimento di fabbricazione |
RU197682U1 (ru) * | 2019-12-27 | 2020-05-21 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский государственный университет" (ТГУ, НИ ТГУ) | Полупроводниковый датчик давления |
US11473991B2 (en) * | 2019-12-29 | 2022-10-18 | Measurement Specialties, Inc. | Low-pressure sensor with stiffening ribs |
DE102020123930B3 (de) | 2020-09-15 | 2021-11-04 | Elmos Semiconductor Se | Verfahren zur ISO 26262 konformen Auswertung eines Drucksensorsignals |
DE102021200720B4 (de) | 2021-01-27 | 2023-08-03 | Infineon Technologies Ag | Transistorbasierter stress-sensor und verfahren zum ermitteln einer gradienten-kompensierten mechanischen spannungskomponente |
US11692895B2 (en) * | 2021-03-30 | 2023-07-04 | Rosemount Aerospace Inc. | Differential pressure sensor |
CN113432777B (zh) * | 2021-05-28 | 2023-02-28 | 歌尔微电子股份有限公司 | Mems压力传感器制造方法及mems压力传感器 |
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CN1190788A (zh) * | 1996-07-31 | 1998-08-19 | Sgs-汤姆森微电子有限公司 | 半导体材料集成微结构及其制造方法 |
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