FR2822817B1 - Procede de fabrication d'une structure a membrane micro-usinee - Google Patents
Procede de fabrication d'une structure a membrane micro-usineeInfo
- Publication number
- FR2822817B1 FR2822817B1 FR0104174A FR0104174A FR2822817B1 FR 2822817 B1 FR2822817 B1 FR 2822817B1 FR 0104174 A FR0104174 A FR 0104174A FR 0104174 A FR0104174 A FR 0104174A FR 2822817 B1 FR2822817 B1 FR 2822817B1
- Authority
- FR
- France
- Prior art keywords
- membrane structure
- manufacturing micro
- factory
- factory membrane
- micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0045—Diaphragm associated with a buried cavity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0047—Diaphragm with non uniform thickness, e.g. with grooves, bosses or continuously varying thickness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0315—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/019—Bonding or gluing multiple substrate layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0104174A FR2822817B1 (fr) | 2001-03-28 | 2001-03-28 | Procede de fabrication d'une structure a membrane micro-usinee |
PCT/FR2002/001040 WO2002076881A1 (fr) | 2001-03-28 | 2002-03-26 | Procede de fabrication d'une structure a membrane micro-usinee |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0104174A FR2822817B1 (fr) | 2001-03-28 | 2001-03-28 | Procede de fabrication d'une structure a membrane micro-usinee |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2822817A1 FR2822817A1 (fr) | 2002-10-04 |
FR2822817B1 true FR2822817B1 (fr) | 2003-05-30 |
Family
ID=8861631
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0104174A Expired - Fee Related FR2822817B1 (fr) | 2001-03-28 | 2001-03-28 | Procede de fabrication d'une structure a membrane micro-usinee |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR2822817B1 (fr) |
WO (1) | WO2002076881A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2849017B1 (fr) * | 2002-12-20 | 2005-11-18 | Michel Bruel | Procede de traitement d'une structure pour l'obtention d'un espace interne et structure presentant un espace interne. |
WO2011083161A2 (fr) * | 2010-01-11 | 2011-07-14 | Elmos Semiconductor Ag | Composant semi-conducteur microélectromécanique et son procédé de fabrication |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3300060B2 (ja) * | 1992-10-22 | 2002-07-08 | キヤノン株式会社 | 加速度センサー及びその製造方法 |
FR2715502B1 (fr) * | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Structure présentant des cavités et procédé de réalisation d'une telle structure. |
AU4801297A (en) * | 1996-10-07 | 1998-05-05 | Lucas Novasensor | Silicon at least 5 micron high acute cavity with channel by oxidizing fusion bonding and stop etching |
DE19851055C2 (de) * | 1998-11-05 | 2001-03-01 | Fraunhofer Ges Forschung | Verfahren zur Herstellung von monolithisch integrierten Sensoren |
-
2001
- 2001-03-28 FR FR0104174A patent/FR2822817B1/fr not_active Expired - Fee Related
-
2002
- 2002-03-26 WO PCT/FR2002/001040 patent/WO2002076881A1/fr not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO2002076881A1 (fr) | 2002-10-03 |
FR2822817A1 (fr) | 2002-10-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |