US20130087865A1 - Micro-electromechanical semiconductor component - Google Patents
Micro-electromechanical semiconductor component Download PDFInfo
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- US20130087865A1 US20130087865A1 US13/521,158 US201113521158A US2013087865A1 US 20130087865 A1 US20130087865 A1 US 20130087865A1 US 201113521158 A US201113521158 A US 201113521158A US 2013087865 A1 US2013087865 A1 US 2013087865A1
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- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
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- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/019—Bonding or gluing multiple substrate layers
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Definitions
- the invention relates to a micro-electromechanical semiconductor component which can be used particularly a pressure or acceleration sensor.
- the invention is related to a CMOS-compatible micro-electromechanical semiconductor component with low current consumption, high manufacturing accuracy and high precision.
- the invention generally relates to a micro-electromechanical component with low current consumption, which is compatible with known semiconductor production processes.
- a special embodiment is a micromechanical CMOS pressure sensor with low current consumption.
- MEMS micromechanical structures
- Such structure are produced with the aid of known lithography methods and thus substantially by use of the same manufacturing steps as are known from the manufacturing of integrated circuits.
- a cavity is formed in a semiconductor substrate, which cavity is generated e.g. in a first semiconductor wafer.
- This first semiconductor wafer will then be bonded to a second semiconductor wafer so that the cavity will finally be delimited, on the one hand, laterally by side walls in the first semiconductor wafer and by a bottom wall of this wafer and, on the other hand, by the second semiconductor wafer as a top wall.
- the semiconductor wafer will then be a package of at least two semiconductor wafers which are bonded to each other and which comprise a plurality of layers of semiconductor material (e.g. silicon and respectively polysilicon) and insulating layers (e.g. SiO) arranged therebetween.
- semiconductor material e.g. silicon and respectively polysilicon
- insulating layers e.g. SiO
- Mechanical stresses which act on such a structure and which shall be detected by means of measurement technology, will have an effect on a deformation, particularly deflection, of the top or bottom wall of the cavity in the semiconductor substrate.
- the respective wall should be connected as flexibly as possible to the region of the semiconductor substrate around the cavity.
- a micro-electromechanical semiconductor component comprising
- the depressions can be arranged in a quadratic and respectively quadratically face-centered configuration.
- the depressions and the stiffening braces are each are arranged, and respectively extend, along lines oriented particularly orthogonally relative to each other.
- the stiffening braces are particularly arranged in the form of a grid, wherein the fields which are delimited by the grid bars can generally have any desired shape.
- an arrangement of depressions and stiffening braces has been proven to be suitable which results e.g.
- said at least one measuring element sensitive to mechanical stresses is a resistor, a transistor, and particularly a piezoresistive component.
- a plurality of measuring elements sensitive to mechanical stresses are connected to form a measurement bridge.
- FIG. 17 Example of a placement of four Wheatstone bridges with four Wheatstone bridges as stress-free references according to FIG. 15 on a sensor die with trench structure (For better survey, the voltage references are not illustrated. In principle, for each pair of Wheatstone bridges, there will suffice a third, short-circuited Wheatstone bridge besides the stress-free reference bridge. Thus, 12 Wheatstone bridges would be found on the die).
- FIG. 25 View onto an exemplary membrane geometry with round trench system and non-continuous webs
- FIG. 28 Boss (central membrane reinforcement) with mass reduction by etched support structure 97 .
- FIGS. 29 and 30 are identical to FIGS. 29 and 30.
- FIG. 31 View onto an exemplary membrane geometry with round cavity, round outer edge of the trench system, and rhombic central portion
- FIG. 35 Further exemplary layout of a measurement bridge with common gate.
- FIG. 37 Exemplary layout of a particularly small measurement bridge transistor with four connectors.
- FIG. 39 A further representation of the micro-electromechanical semiconductor component of the invention with mass-reduced boss.
- the invention will be illustrated by way of example of a pressure sensor for detection of low pressures.
- a first essential aspect of the invention resides in the generating of the pressure sensor cavity 4 prior to the processing of the CMOS steps. Thereby, random standard CMOS processes can be performed on the surface. This makes it possible, as a second essential step, to place CMOS transistors on a membrane in such a manner that they will lie in a region of optimal mechanical stress upon deflection of the membrane. This point can be determined by analytic considerations and/or finite element simulations.
- a first exemplary process is represented, by way of essential steps thereof, in FIGS. 1 and 2 . Modifications of this first process will be described further below.
- the basic manufacturing process starts with a first wafer 1 which preferably consists of the same material as a later used second wafer 5 .
- a layer 2 is deposited which serves for later connection.
- this layer will be formed as a SiO 2 layer 2 by oxidation.
- a window will be opened and the later pressure sensor cavity 4 will be etched ( FIG. 1 c ).
- Said etching is preferably performed by a DRIE or plasma etching step because particularly the first one will result in straight walls 3 .
- the upper wafer 5 will likewise be provided with an oxide layer and will be bonded onto the first wafer 1 and be ground ( FIG. 1 d ).
- the bonding process herein is preferably performed in a vacuum. This will lead to a cavity which is not filled with gas, and will prevent a later temperature dependence of the interior pressure in the cavity. By this process, a membrane is generated in the region of cavity 4 , whose thickness is determined by the grinding process.
- these micromechanical structures 6 are e.g. trench structures forming approximately closed rings or quadrangles which are interrupted only by few webs 8 ( FIG. 2 ). In the middle, there is thus generated a central plate 12 —referred to as a boss—which, due to the increased thickness, forms a reinforcement.
- the bottom of the trenches 6 forms a membrane 7 of reduced thickness. This membrane typically takes up substantially less forces. It is important herein that the outer edge of the trench 6 is sufficiently spaced from the wall of the cavity 3 since, otherwise, small adjustment errors in manufacture would have a massive effect on the mechanical stress and thus on the measurement result. This is a substantial innovation. The reproducibility, under the aspect of production technology, of the sensor properties, would otherwise suffer, which would cause increased expenditure for calibration and therefore would entail corresponding costs.
- the pressure on the central plate 12 is dissipated virtually exclusively through mechanical tension via the webs 8 . Consequently, it is reasonable to place onto said webs those components 9 which are sensitive to mechanical stress and are provided to detect this stress. These are connected to the connectors 10 via lines. Thus, by the trenches, the mechanical stress field will be adjusted relative to the stress-sensitive electronic components.
- the cavity can also be etched into the upper wafer. This is correspondingly represented in FIGS. 3 and 4 in steps a to f.
- At least one window will be opened and the later cavity 18 will be etched.
- Said etching is preferably performed by a DRIE etching step because this step will result in straight walls ( FIG. 6 f ). It is of course also possible to etch the cavity 18 into the upper wafer 13 , but this will not be described in greater detail hereunder.
- these micromechanical structures 19 are again e.g. trench structures forming approximately closed rings or quadrangles which are interrupted only by few webs 20 . In the middle, there is thus again generated a central plate 21 which, due to the increased thickness, forms a reinforcement. The bottom of the trenches 19 forms a membrane 25 of reduced thickness. This membrane typically takes up virtually no forces.
- the additional layer 15 and the resultant additional oxide layer 14 make it possible to stop the etching of the trenches 19 with greater precision than in the first method. Thereby, the electromechanical properties can be realized more precisely and with better repetitive accuracy, thus distinctly lowering the calibration costs.
- CMOS or bipolar process stress-sensitive electronic components are produced on the respective surface 11 , 24 and are connected.
- CMOS process preferred use is made of a p-doped substrate.
- piezoelectric resistors can be placed on the webs 20 , 8 and be connected to form a Wheatstone bridge. These, however, have the disadvantage that they first must be brought onto the operating temperature and will consume relatively much electrical energy during measurement. Thus, they are unsuited for energy-autonomous systems. As already described above, the invention also aims at eliminating this problem.
- the transistors of identical design geometries have a similar geometry in their physical realization. This geometry is determined substantially by the design of the polysilicon surface.
- the exemplary reference voltage source consists of the transistors 30 and 29 .
- the transistors 31 , 32 , 33 , 34 again form a Wheatstone bridge which can be sensed at the terminals 28 , 36 . Both are connected as MOS diodes by connection of the gate to the drain.
- the reference voltage of transistor 30 is connected to the gate of transistors 31 and 33 .
- the reference voltage of transistor 29 is connected to the gate of transistors 32 and 34 .
- the drain of transistor 29 is on the potential of terminal 26 . In p-channel transistors, this terminal is typically connected to ground.
- the drain contacts of transistors 32 and 34 are likewise connected to this terminal.
- the transistors are preferably realized with identical geometric dimensions.
- An example of the layout of a local Wheatstone MOS bridge is illustrated in FIG. 14 . If the transistors are arranged as in FIG. 14 , the transistors 31 and 34 are oriented identically. The transistors 23 and 33 are also oriented identically relative to each other but vertically to transistors 31 and 34 .
- FIG. 14 shows an exemplary arrangement.
- the membrane is not provided with a field oxide but only with a full-surfaced, extremely thin gate oxide of a few nm and a suitable passivation. If the application of a field oxide is unavoidable, high symmetry is recommendable so as to keep parasitic effects on all stress-sensitive components at an identical level.
- the passivation can consist of silicon nitride. This has a low hydrogen diffusion coefficient and thus will protect the component against in- and out-diffusion of protons which, particularly in case of a permanently applied voltage and a high operating temperature may cause a drift of the p-resistors and the p-channel transistors. This effect is known as NBTI.
- the membrane of the exemplary pressure sensor is covered only with the gate oxide and the passivation layer, silicon nitride.
- the feed lines on the die will be realized, if possible, not in metal, which has a high thermal expansion coefficient particularly relative to silicon, but in the wafer material and, in case of silicon, as a high-doped layer or as a high-doped polysilicon or, if not possible otherwise, as a high-doped amorphous or polycrystalline silicon.
- the drain and source feed lines of the transistors 26 , 28 , 35 , 36 are realized e.g.
- p+-implants 36 , 35 , 26 , 28 are realized as p+-implants 36 , 35 , 26 , 28 .
- the gates and their feed lines are realized e.g. in polysilicon 33 , 39 , 31 and 32 , 34 , 38 .
- no channel will be formed in this example, which is due to the field threshold. This will be possible only at the edge of the poly gates. For this reason, there is implanted a n+-channel stopper 37 which will interrupt parasitic forces.
- FIG. 15 shows a further variant of the Wheatstone bridge.
- the reference voltage by which the bridge consisting of the transistors 31 , 32 , 33 , 34 is operated is generated from a bridge similar to that one, consisting of transistors 30 , 29 , 55 , 56 .
- the reference bridge will be short-circuited, thus generating the reference voltage 35 by which the transistors 31 , 32 , 33 , 34 of the first bridge are controlled.
- the second bridge will be placed on the substrate as far away as possible from the mechanical tensions but still as close as possible to the first bridge. This serves for keeping the manufacturing variations between the bridges as small as possible.
- the first bridge will be placed at the point of suitable mechanical stress. This is the point where a mechanical stress as high as possible will be generated upon deflection of the exemplary membrane while, however, this stress is still so homogenous that manufacturing variations will not yet be perceived too massively.
- FIG. 16 shows the possible placement of four bridges according to FIG. 12 .
- FIG. 17 shows the placement of bridges and reference bridges according to FIG. 15 .
- three levels of compensation exist. On the first level, the level of the four transistors, the direction of the mechanical stress will be detected. This is performed by comparison between values of transistors arranged mutually vertically.
- these four transistors in their totality 43 will be compared to four further, similarly arranged transistors 58 located close to the first four ones, 43 , but in a mechanically less stressed region, ideally on the neutral fiber.
- the mechanically induced offset of the bridge will be differentiated from that offset which is caused by adjustment errors during manufacture.
- the sensor is symmetric, it is reasonable to install eight further transistors, according to the number of positions on the axis of symmetry. In the example ( FIG. 17 ), these are four pairs of sensors 44 , 57 ; 41 , 60 ; 42 , 59 ; 43 , 58 , each pair consisting of two by four transistors.
- FIG. 34 shows the appertaining circuitry with a reference voltage source consisting of the transistors 108 , 109 .
- the four transistors 104 , 105 , 106 , 107 connected to form a Wheatstone bridge have a common gate 110 , which simplifies the layout.
- the bridge Via the terminals 103 and 102 , the bridge is supplied with voltage. In case of a mechanical distortion of the bridge, an electric voltage will appear at the terminals 111 , 112 .
- FIG. 35 illustrates a further variant of this bridge. If the channel stopper 37 in the middle of the bridge is omitted, this results in a field-plate-like transistor 115 with four terminals ( FIG. 37 ).
- FIG. 33 shows the appertaining circuitry with a reference voltage source consisting of the transistors 108 , 109 .
- the four transistors 104 , 105 , 106 , 107 connected to form a Wheatstone bridge have a common gate 110 , which simplifies the layout.
- the bridge
- the differential amplifier in this example will be brought to the working point by a similarly designed, short-circuited reference differential amplifier.
- the latter and the transistors 61 , 62 , 63 , 64 , 74 are suitably arranged not on the membrane but in a region of the die which is nearly free of mechanical stress. In order to guarantee the congruence of the electrical parameters of the components in the stress-free state, these should nonetheless be placed as close to the other transistors as possible.
- the orientation and the layout of all elements suitably will be realized as closely adjacent as possible and with the same orientation so that particularly also the current-mirror pairs will be well attuned to each other.
- FIGS. 20 to 25 show different embodiments of the trenches and cavities.
- the senor is suspended on webs 94 .
- these are no extensions of the webs 8 on which the boss 12 is fastened. Thereby, mechanical stress will be transmitted to the sensors 9 only indirectly from outside.
- the construction with the aid of a boss will lead to an increased sensitivity to seismic stresses. This sensitivity can be lowered by reducing the boss mass ( FIG. 28 ).
- a suitable support structure will be etched into the boss 97 . There will remain webs which, if suitably selected, will generate a sufficient areal moment of inertia for guaranteeing the mechanical stability.
- the sensor 22 herein will be placed, as above, on a web 20 interrupting the race-track trench 19 .
- FIGS. 29 and 30 show corresponding exemplary shapes. The advantage of such a construction resides in the small opening and thus in the only very small loss of stability in comparison to a sensor wherein the cavity was etched from the rear side.
- the bonding system normally is made of metal having a considerably deviating thermal expansion coefficient. Further, the metal will cause hysteresis effects. Thus, it is reasonable to decouple the bond pads 10 from the rest of the sensors as far as possible. This can be effected by mechanical guard rings in the form of trenches 157 which e.g. will be laid as far as possible around the pads or to-be-protected parts ( FIG. 32 ).
- a handle wafer 16 there is etched a cavity 18 delimited by side walls 18 a and a bottom wall 18 b .
- Said handle wafer 16 is connected, via an oxide layer 17 , to a polysilicon layer 15 which in turn is separated from a device wafer 13 by an oxide layer 14 .
- the device wafer 13 serves as a top wall 18 c delimiting the cavity 18 .
- electronic components e.g.
- piezoresistive transistors or resistors 22 , conduits 24 and terminals 23 were produced by a CMOS process. Then, the mechanical properties of the membrane 25 (i.e. of the flexible top wall 18 c ) above the cavity 18 were altered in a well-aimed manner by etching trenches 19 and maintaining bending webs 20 . In this arrangement, said trenches 19 extend at an inward offset relative to the side walls 18 a and surround a central region 21 of membrane 25 and respectively top wall 18 c . For the time being, there remains, in the center, a region 21 with unchanged thickness (the so-called boss). The latter comprises an increased mass, which is disadvantageous with respect to the seismic sensitivity.
- said boss will be altered by a structuring shape 97 to the effect that the mechanical stability of said central region 21 will not be substantially changed while, however, its mass is considerably reduced.
- This is effected by etching depressions 97 a and maintaining stiffening braces 97 b .
- Said depressions 97 a like the trenches 19 , will be etched from one side into the device wafer 13 by two etching steps. In the first etching step, a trench will be etched into the silicon of the device wafer 13 , wherein the underlying silicon oxide layer 14 can serve as an etching stopper. Then, in a second etching step, the silicon oxide of layer 14 will be etched, wherein the polysilicon layer 15 can serve as an etching stopper.
- the invention is not restricted to the construction and manufacture according to FIG. 39 .
- the micro-electromechanical semiconductor component one can use also structures as illustrated and explained above with reference to FIGS. 1 to 10 .
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Abstract
Description
- The invention relates to a micro-electromechanical semiconductor component which can be used particularly a pressure or acceleration sensor. Particularly, the invention is related to a CMOS-compatible micro-electromechanical semiconductor component with low current consumption, high manufacturing accuracy and high precision.
- The invention generally relates to a micro-electromechanical component with low current consumption, which is compatible with known semiconductor production processes. A special embodiment is a micromechanical CMOS pressure sensor with low current consumption.
- For the realization of pressure or acceleration sensors, it is known to make use of micromechanical structures (so-called MEMS). Such structure are produced with the aid of known lithography methods and thus substantially by use of the same manufacturing steps as are known from the manufacturing of integrated circuits. In the process, a cavity is formed in a semiconductor substrate, which cavity is generated e.g. in a first semiconductor wafer. This first semiconductor wafer will then be bonded to a second semiconductor wafer so that the cavity will finally be delimited, on the one hand, laterally by side walls in the first semiconductor wafer and by a bottom wall of this wafer and, on the other hand, by the second semiconductor wafer as a top wall. The semiconductor wafer will then be a package of at least two semiconductor wafers which are bonded to each other and which comprise a plurality of layers of semiconductor material (e.g. silicon and respectively polysilicon) and insulating layers (e.g. SiO) arranged therebetween. Mechanical stresses which act on such a structure and which shall be detected by means of measurement technology, will have an effect on a deformation, particularly deflection, of the top or bottom wall of the cavity in the semiconductor substrate. The respective wall should be connected as flexibly as possible to the region of the semiconductor substrate around the cavity. For this purpose, it is known to reduce the thickness of the respective wall by trenches which particularly are formed on one side, wherein, between the trenches, bending webs will remain which connect the central region of the wall within the trenches to the region of the semiconductor substrate around the cavity, while the thickness of the top and respectively bottom wall remains constant. Within these bending webs, measuring elements (piezoresistive transistors, resistors or the like) which are sensitive to mechanical stresses, will then be formed in the semiconductor substrate, wherein, for this purpose, use can be made e.g. of a CMOS process.
- Pressure sensors of the above mentioned type have generally proven themselves in the state of the art. However, it is desirable that the seismic sensitivity of the given pressure-sensitive top and respectively bottom wall of the cavity should be as small as possible.
- Thus, it is an object of the invention to provide a micro-electromechanical semiconductor component which is of advantage in the above respect.
- To achieve the above object, there is proposed, according to the invention, a micro-electromechanical semiconductor component comprising
-
- a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall,
- for forming a flexible connection to the region of the semiconductor substrate, the top or bottom wall being provided with trenches around the cavity, said trenches being particularly arranged at an inward offset relative to the side walls of the cavity, at least one bending web being formed between said trenches,
- at least one measuring element that is sensitive to mechanical stresses being formed within at least one of said bending webs.
- In this micro-electromechanical semiconductor component, it is provided, according to the invention,
-
- that, within its central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating said depressions.
- According to the invention, it is thus proposed to alter the central region of the flexible top or bottom wall of the cavity by means of structuring in such a manner that the mass of the top and respectively bottom wall is reduced without changing its mechanical stability; the latter instead remains substantially unchanged. As a result, the seismic sensitivity of the micro-electromechanical semiconductor component is reduced.
- The arrangement and number as well as the shape of said depressions and of the stiffening braces are dictated by the requirement of the unchanged mechanical stability of the flexible top and respectively bottom wall. Thus, for instance, the depressions can be arranged in a quadratic and respectively quadratically face-centered configuration. In other words, it can be provided that the depressions and the stiffening braces are each are arranged, and respectively extend, along lines oriented particularly orthogonally relative to each other. The stiffening braces are particularly arranged in the form of a grid, wherein the fields which are delimited by the grid bars can generally have any desired shape. For instance, an arrangement of depressions and stiffening braces has been proven to be suitable which results e.g. from a (spherical) package having the highest two-dimensional density. However, the invention is not limited to this structure. Each structure which, while having a low weight, generates a high stiffness of the top and respectively bottom wall in the plane of the wall, is suited for the invention.
- According to an advantageous embodiment of the invention, it is further provided that said at least one measuring element sensitive to mechanical stresses is a resistor, a transistor, and particularly a piezoresistive component.
- According to the invention, it is provided that a plurality of measuring elements sensitive to mechanical stresses are connected to form a measurement bridge.
- With the aid of the micro-electromechanical semiconductor component of the invention, it is possible to construct e.g. pressure and acceleration sensors. In this case, the pressure sensor can be designed as an absolute or differential pressure sensor.
- The invention will be explained in greater detail hereunder with reference to the drawing. Specifically, the drawings show the following:
-
FIG. 1 Process for producing a structure in accordance with the invention: -
- a) raw wafer
- b) oxidation and opening of windows
- c) etching the cavity
- d) bonding the top wafer (followed by the CMOS process, which is not especially shown)
- e) etching the trenches (after the CMOS process).
-
FIG. 2 Three-dimensional simplified sectional view of a pressure sensor produced according to the process ofFIG. 1 . -
FIG. 3 Alternative second process for producing a structure in accordance with the invention: -
- a) raw wafer
- b) oxidation and opening of windows
- c) etching the cavity
- d) bonding the handle wafer (followed by the CMOS process on the top wafer with cavity, which is not especially shown)
- e) etching the trenches (after the CMOS process).
-
FIG. 4 Three-dimensional simplified sectional view of a pressure sensor produced according to the process ofFIG. 3 . -
FIGS. 5 to 10 -
- Alternative third process for producing a structure in accordance with the invention:
- a) raw wafer
- b) oxidation
- c) application of polysilicon layer and partial oxidation
- d) second raw wafer
- e) oxidation and opening of a window
- f) etching the cavity
- g) bonding the handle wafer
- h) partial grinding (followed by the CMOS process on the top wafer with cavity, which is not especially shown)
- i) etching the trenches (after the CMOS process)
- j) three-dimensional simplified sectional view of a pressure sensor produced according to the process of
FIGS. 5 to 9 .
-
FIG. 11 Example of the layout of a transistor. -
FIG. 12 Connection of four transistors to form a Wheatstone bridge (operation of the transistors as resistors). -
FIG. 13 Exemplary connection of four transistors and two further transistors to form a Wheatstone bridge with reference voltage source. -
FIG. 14 Exemplary layout of a Wheatstone bridge. -
FIG. 15 Connection of eight transistors to form a Wheatstone bridge, with a second short-circuited Wheatstone bridge as a reference voltage source. -
FIG. 16 Example of a placement of four Wheatstone bridges according toFIG. 12 on a sensor die with trench structure. -
FIG. 17 Example of a placement of four Wheatstone bridges with four Wheatstone bridges as stress-free references according toFIG. 15 on a sensor die with trench structure (For better survey, the voltage references are not illustrated. In principle, for each pair of Wheatstone bridges, there will suffice a third, short-circuited Wheatstone bridge besides the stress-free reference bridge. Thus, 12 Wheatstone bridges would be found on the die). -
FIG. 18 Exemplary layout of a differential stage. -
FIG. 19 Exemplary circuit arrangement for a circuit with a differential amplifier and a referential differential amplifier as a reference voltage source. -
FIG. 20 View onto an exemplary membrane geometry with quadratic trench system -
- a) plan view
- b) view from below.
-
FIG. 21 View onto an exemplary membrane geometry with quadratic trench system and rhombic central portion -
- a) plan view
- b) view from below.
-
FIG. 22 View onto an exemplary membrane geometry with quadratic trench system which was chamfered in the corners, and with rhombic central portion -
- a) plan view
- b) view from below.
-
FIG. 23 View onto an exemplary membrane geometry with quadratic trench system and webs in the corners, -
- a) plan view
- b) view from below.
-
FIG. 24 View onto an exemplary membrane geometry with round trench system and round cavity, -
- a) plan view
- b) view from below.
-
FIG. 25 View onto an exemplary membrane geometry with round trench system and non-continuous webs, -
- a) plan view
- b) view from below.
-
FIGS. 26 and 27 -
- sensors with additional trenches.
-
FIG. 28 Boss (central membrane reinforcement) with mass reduction byetched support structure 97. -
FIGS. 29 and 30 -
- Exemplary differential pressure sensors generated from the above sensors by etching an
opening 119.
- Exemplary differential pressure sensors generated from the above sensors by etching an
-
FIG. 31 View onto an exemplary membrane geometry with round cavity, round outer edge of the trench system, and rhombic central portion -
- a) plan view
- b) view from below.
-
FIG. 32 View onto an exemplary membrane geometry with round cavity, round outer edge of the trench system, and rhombic central portion, and additional trenches for protection of the system against spreading of externally introduced stress -
- a) plan view
- b) view from below.
-
FIG. 33 Circuit diagram of a bridge according toFIG. 34 andFIG. 35 as a measurement bridge with reference voltage source. -
FIG. 34 Exemplary layout of a measurement bridge with common gate. -
FIG. 35 Further exemplary layout of a measurement bridge with common gate. -
FIG. 36 Equivalent circuit diagram of a transistor according toFIG. 37 as a measurement bridge with reference voltage source. -
FIG. 37 Exemplary layout of a particularly small measurement bridge transistor with four connectors. -
FIG. 38 A detailed view. -
FIG. 39 A further representation of the micro-electromechanical semiconductor component of the invention with mass-reduced boss. - The invention will be illustrated by way of example of a pressure sensor for detection of low pressures. A first essential aspect of the invention resides in the generating of the
pressure sensor cavity 4 prior to the processing of the CMOS steps. Thereby, random standard CMOS processes can be performed on the surface. This makes it possible, as a second essential step, to place CMOS transistors on a membrane in such a manner that they will lie in a region of optimal mechanical stress upon deflection of the membrane. This point can be determined by analytic considerations and/or finite element simulations. - A first exemplary process is represented, by way of essential steps thereof, in
FIGS. 1 and 2 . Modifications of this first process will be described further below. - The basic manufacturing process starts with a
first wafer 1 which preferably consists of the same material as a later usedsecond wafer 5. On this wafer, alayer 2 is deposited which serves for later connection. In silicon wafers, this layer will be formed as a SiO2 layer 2 by oxidation. Within this layer, a window will be opened and the laterpressure sensor cavity 4 will be etched (FIG. 1 c). Said etching is preferably performed by a DRIE or plasma etching step because particularly the first one will result instraight walls 3. - The
upper wafer 5 will likewise be provided with an oxide layer and will be bonded onto thefirst wafer 1 and be ground (FIG. 1 d). The bonding process herein is preferably performed in a vacuum. This will lead to a cavity which is not filled with gas, and will prevent a later temperature dependence of the interior pressure in the cavity. By this process, a membrane is generated in the region ofcavity 4, whose thickness is determined by the grinding process. - As a result, one will obtain a wafer package which can be used in a standard CMOS process or standard bipolar process in the same way as a normal SOI material.
- After the CMOS processing, which does not have to be described in greater detail here because the processing can be gathered from standard literature, further
micromechanical structures 6 can then be etched into the surface 11 (FIG. 1 e). - In the case of the exemplary pressure sensor, these
micromechanical structures 6 are e.g. trench structures forming approximately closed rings or quadrangles which are interrupted only by few webs 8 (FIG. 2 ). In the middle, there is thus generated acentral plate 12—referred to as a boss—which, due to the increased thickness, forms a reinforcement. The bottom of thetrenches 6 forms amembrane 7 of reduced thickness. This membrane typically takes up substantially less forces. It is important herein that the outer edge of thetrench 6 is sufficiently spaced from the wall of thecavity 3 since, otherwise, small adjustment errors in manufacture would have a massive effect on the mechanical stress and thus on the measurement result. This is a substantial innovation. The reproducibility, under the aspect of production technology, of the sensor properties, would otherwise suffer, which would cause increased expenditure for calibration and therefore would entail corresponding costs. - Thus, the pressure on the
central plate 12 is dissipated virtually exclusively through mechanical tension via thewebs 8. Consequently, it is reasonable to place onto said webs thosecomponents 9 which are sensitive to mechanical stress and are provided to detect this stress. These are connected to theconnectors 10 via lines. Thus, by the trenches, the mechanical stress field will be adjusted relative to the stress-sensitive electronic components. - By way of alternative, the cavity can also be etched into the upper wafer. This is correspondingly represented in
FIGS. 3 and 4 in steps a to f. - An essential disadvantage of the two above processes is the absence of a natural etching stopper for the etching of the
trenches 6. For this reason, the thickness of the membrane at the bottom of thetrenches 7 can be controlled only with difficulty. As a consequence, the relative error is comparatively high, causing a dispersion of the sensor parameters. - A third exemplary process which is free of the above disadvantage is represented, by way of essential steps thereof, in
FIGS. 5 to 10 and steps a to j. - The manufacturing process starts with a
first wafer 13 which preferably is of the same material as the later usedsecond wafer 16. Onto this wafer, there is applied a connection layer which in the case of silicon wafers is a SiO2 layer 14. On this SiO2 layer, a further layer will be deposited, e.g. a polysilicon layer oramorphous silicon layer 15, and will be superficially oxidized (FIG. 5 c). The depositing of this layer typically can be controlled very well and thus will be considerably more precise in its result than the etching of the trenches in the first two described processes. The second wafer will be oxidized as well, thus likewise generating anoxide layer 17. In this layer, at least one window will be opened and thelater cavity 18 will be etched. Said etching is preferably performed by a DRIE etching step because this step will result in straight walls (FIG. 6 f). It is of course also possible to etch thecavity 18 into theupper wafer 13, but this will not be described in greater detail hereunder. - The upper
first wafer 13 will be bonded onto the second wafer 16 (FIG. 7 ) and subsequently will be grinded (FIG. 8 ). The bonding process herein will preferably again be performed in a vacuum so as to exclude a later temperature dependency of the interior pressure in thecavity 18. By this process, a membrane is generated in the region of the cavity, whose thickness is determined by the grinding process. - As a result, one will again obtain a wafer package which in principle can be used in a standard CMOS process or standard bipolar process in the same way as a standard wafer.
- After the CMOS or bipolar processing, further micromechanical structures,
e.g. trenches 19, can then be etched into the surface 24 (FIG. 10 ) as in the above described processes. - In the case of a pressure sensor, these
micromechanical structures 19 are again e.g. trench structures forming approximately closed rings or quadrangles which are interrupted only byfew webs 20. In the middle, there is thus again generated acentral plate 21 which, due to the increased thickness, forms a reinforcement. The bottom of thetrenches 19 forms amembrane 25 of reduced thickness. This membrane typically takes up virtually no forces. In contrast to the first method, theadditional layer 15 and the resultantadditional oxide layer 14 make it possible to stop the etching of thetrenches 19 with greater precision than in the first method. Thereby, the electromechanical properties can be realized more precisely and with better repetitive accuracy, thus distinctly lowering the calibration costs. - As in the result of the first process, the pressure (see
FIG. 10 ) on thecentral plate 21 is dissipated virtually exclusively via thewebs 20. Consequently, it is again reasonable to place onto said webs thosecomponents 22 which are sensitive to mechanical stress and are provided to detect this stress. These are connected to theconnectors 23 via lines. - Of course, it can also be envisioned, instead of using a depositing process, to produce said
additional layer 15 by bonding and grinding a third wafer. Further, it can be envisioned to integrate more than one buried insulated layer of the type of saidadditional layer 15 into a wafer packet. - With a wafer package generated in this manner, it is possible again to produce stress-sensitive sensors on the membrane after their production prior to generating the trenches (6 or 19).
- To this end, in a CMOS or bipolar process, stress-sensitive electronic components are produced on the
respective surface - For instance, piezoelectric resistors can be placed on the
webs - Thus, in place of such simple electronic components, it is reasonable to use actively amplifying components such as e.g. bipolar transistors and MOS transistors. These can again be connected to form a Wheatstone bridge but will need no warm-up time and will consume less energy. An exemplary circuit arrangement is shown in
FIG. 12 . - Herein, four p-
channel transistors terminals 89,90. Thetransistors transistor pair transistor pair - Now, to make it possible to produce such a MOS transistor circuit with sufficient accuracy, the transistors have to be designed in such a manner that the electrically active part is self-adjusting.
FIG. 11 shows an exemplary layout of such a self-adjusting transistor. Herein, the p+-contact implants 80 and 79 are shaded by thepoly gate 81 in such a manner that, also in case of displacement, there will always be maintained the same transistor channel length and transistor width. Thepoly gate 81 also shades the n+-channel stopper implant. The gate is connected via a low-impedance poly line. - Thus, it is safeguarded that the transistors of identical design geometries have a similar geometry in their physical realization. This geometry is determined substantially by the design of the polysilicon surface.
- To bring the transistors to the respective correct operating point, it is suitable to also integrate a reference voltage source on the pressure sensor. In the example (
FIG. 13 ), the exemplary reference voltage source consists of thetransistors transistors terminals transistor 30 is connected to the gate oftransistors transistor 29 is connected to the gate oftransistors FIG. 13 , the drain oftransistor 29 is on the potential ofterminal 26. In p-channel transistors, this terminal is typically connected to ground. Therefore, the drain contacts oftransistors FIG. 14 . If the transistors are arranged as inFIG. 14 , thetransistors transistors transistors FIG. 14 shows an exemplary arrangement. - To keep the mechanical distortion on the membrane at a minimum, the membrane is not provided with a field oxide but only with a full-surfaced, extremely thin gate oxide of a few nm and a suitable passivation. If the application of a field oxide is unavoidable, high symmetry is recommendable so as to keep parasitic effects on all stress-sensitive components at an identical level. In a silicon pressure sensor, for instance, the passivation can consist of silicon nitride. This has a low hydrogen diffusion coefficient and thus will protect the component against in- and out-diffusion of protons which, particularly in case of a permanently applied voltage and a high operating temperature may cause a drift of the p-resistors and the p-channel transistors. This effect is known as NBTI. In order to avoid any possible kind of mechanical distortion, no field oxide or the like will be generated near mechanical components or even on these. Therefore, particularly the membrane of the exemplary pressure sensor is covered only with the gate oxide and the passivation layer, silicon nitride. Further, the feed lines on the die will be realized, if possible, not in metal, which has a high thermal expansion coefficient particularly relative to silicon, but in the wafer material and, in case of silicon, as a high-doped layer or as a high-doped polysilicon or, if not possible otherwise, as a high-doped amorphous or polycrystalline silicon. In this example (
FIG. 14 ), the drain and source feed lines of thetransistors implants polysilicon surface 40 which will be n-doped, no channel will be formed in this example, which is due to the field threshold. This will be possible only at the edge of the poly gates. For this reason, there is implanted a n+-channel stopper 37 which will interrupt parasitic forces. By this exemplary all-silicon realization, it is thus possible that the element sensitive to mechanical stress can be kept very small and insensitive to manufacturing tolerances and thermomechanical stress caused by foreign materials, so that the sensitivity to inhomogeneous stress distribution will be further reduced. In spite of these provisions, there still exist marginal differences between the materials. For this reason, when designing the electronic components on the die, and particularly in components arranged on the membrane, care is taken to maintain the highest possible symmetry. Thus, it is reasonable that components which are used for differentiation—e.g. those in Wheatstone bridges or differential amplifiers—are placed as closely together as possible so as to minimize the influence of manufacturing inhomogeneities. -
FIG. 15 shows a further variant of the Wheatstone bridge. Therein, the reference voltage by which the bridge consisting of thetransistors transistors reference voltage 35 by which thetransistors - For further minimization of influences of misalignment, it can be reasonable to place a plurality of bridges on one die. This can be effected e.g. by a placement as shown in
FIG. 16 . Here, there is shown the possible placement of four bridges according toFIG. 12 .FIG. 17 shows the placement of bridges and reference bridges according toFIG. 15 . In an arrangement as shown inFIG. 17 , three levels of compensation exist. On the first level, the level of the four transistors, the direction of the mechanical stress will be detected. This is performed by comparison between values of transistors arranged mutually vertically. On the next level, these four transistors in theirtotality 43 will be compared to four further, similarly arrangedtransistors 58 located close to the first four ones, 43, but in a mechanically less stressed region, ideally on the neutral fiber. Thereby, the mechanically induced offset of the bridge will be differentiated from that offset which is caused by adjustment errors during manufacture. If the sensor is symmetric, it is reasonable to install eight further transistors, according to the number of positions on the axis of symmetry. In the example (FIG. 17 ), these are four pairs ofsensors - Theoretically, the placement of a single transistor is already sufficient for stress measurement. In this case, however, all manufacturing errors will already have a massive effect.
- A first alternative layout is shown in
FIG. 34 .FIG. 33 shows the appertaining circuitry with a reference voltage source consisting of thetransistors transistors common gate 110, which simplifies the layout. Via theterminals terminals FIG. 35 illustrates a further variant of this bridge. If thechannel stopper 37 in the middle of the bridge is omitted, this results in a field-plate-like transistor 115 with four terminals (FIG. 37 ).FIG. 36 shows the equivalent circuit diagram oftransistor 115. Added thereto are then thetransistors - An alternative layout arrangement of the transistors of a
sensor element FIG. 18 . Here, the fourtransistors common drain contact 50 which via afeed line 49 is connected to a current source that is not located on the membrane of the pressure sensor. The gates of thetransistors poly line 48. The source contacts are respectively connected by a highly doped p+-conduit FIG. 19 . All other transistors ofFIG. 19 are not arranged on the membrane but on the substrate without underlying cavity. It is obvious that already half of the four transistors, i.e. for instance thetransistors - The circuit consists of two differential amplifiers. The left-hand amplifier (
transistors 65 to 73) is short-circuited in the output and the input and operates as a reference voltage source for the operation of the second amplifier. These transistors are arranged in a region which is free of mechanical stress. The above describedtransistors current source 74 supplies current to the thus formed differential amplifier. Thetransistor 74 in this example is an n-channel transistor. In operation, the outputs of thedifferential amplifier transistors transistors transistors transistors -
FIGS. 20 to 25 show different embodiments of the trenches and cavities. - In the design of the
race track 6 and thecavity 3, various factors have to be considered: - 1. A suitable distance has to be maintained between the race-track outer wall and the cavity wall.
- 2. The circle passing through the outer contact points of the webs with the race-track outer wall is not to be intersected by the race-track outer wall because this would result in a distortion of the mechanical stress field in the
boss 12. - 3. The connecting lines between the base points of the
webs 8 onboss 12 is not to be intersected by the outer edge of the boss because this would result in a distortion of the mechanical stress field in the boss. - 4. The construction should, if possible, comprise no corners because very strong voltages could occur in these, causing nonlinear effects and bi-stability.
- Opposed to the above demands are demands with regard to the burst pressure. If the race-track surface becomes too large, the race-track membrane will break more quickly.
- To decouple the membrane from mechanical stress caused by the design a and the connection technology, it is thus reasonable e.g. to generate a
further trench 93 around the sensor (FIG. 26 ) and in this manner to generate a virtually larger race-track membrane without the above mentioned danger of breakage. - Herein, the sensor is suspended on
webs 94. In the ideal case, these are no extensions of thewebs 8 on which theboss 12 is fastened. Thereby, mechanical stress will be transmitted to thesensors 9 only indirectly from outside. - This principle can still be continued by a
further trench 95 and further webs 96 (FIG. 27 ). - The construction with the aid of a boss will lead to an increased sensitivity to seismic stresses. This sensitivity can be lowered by reducing the boss mass (
FIG. 28 ). For this purpose, a suitable support structure will be etched into theboss 97. There will remain webs which, if suitably selected, will generate a sufficient areal moment of inertia for guaranteeing the mechanical stability. Thesensor 22 herein will be placed, as above, on aweb 20 interrupting the race-track trench 19. - In case that, instead of an absolute pressure sensor, a differential pressure sensor is to be generated, this can be performed by subsequent etching of an
opening 119 into the lower wafer.FIGS. 29 and 30 show corresponding exemplary shapes. The advantage of such a construction resides in the small opening and thus in the only very small loss of stability in comparison to a sensor wherein the cavity was etched from the rear side. - The bonding system normally is made of metal having a considerably deviating thermal expansion coefficient. Further, the metal will cause hysteresis effects. Thus, it is reasonable to decouple the
bond pads 10 from the rest of the sensors as far as possible. This can be effected by mechanical guard rings in the form of trenches 157 which e.g. will be laid as far as possible around the pads or to-be-protected parts (FIG. 32 ). - Hereunder, with reference to
FIG. 39 , there will again be explained the embodiment of a micro-electromechanical semiconductor component with boss-reduced mass. Manufacture of the semiconductor element shown inFIG. 39 is as follows. In ahandle wafer 16, there is etched acavity 18 delimited byside walls 18 a and abottom wall 18 b. Saidhandle wafer 16 is connected, via anoxide layer 17, to apolysilicon layer 15 which in turn is separated from adevice wafer 13 by anoxide layer 14. Within its region bridging thecavity 18, thedevice wafer 13 serves as atop wall 18 c delimiting thecavity 18. On thedevice wafer 13, electronic components (e.g. piezoresistive transistors or resistors) 22,conduits 24 andterminals 23 were produced by a CMOS process. Then, the mechanical properties of the membrane 25 (i.e. of the flexibletop wall 18 c) above thecavity 18 were altered in a well-aimed manner by etchingtrenches 19 and maintaining bendingwebs 20. In this arrangement, saidtrenches 19 extend at an inward offset relative to theside walls 18 a and surround acentral region 21 ofmembrane 25 and respectivelytop wall 18 c. For the time being, there remains, in the center, aregion 21 with unchanged thickness (the so-called boss). The latter comprises an increased mass, which is disadvantageous with respect to the seismic sensitivity. In the device of the invention, said boss will be altered by a structuringshape 97 to the effect that the mechanical stability of saidcentral region 21 will not be substantially changed while, however, its mass is considerably reduced. This is effected by etchingdepressions 97 a and maintaining stiffening braces 97 b. Saiddepressions 97 a, like thetrenches 19, will be etched from one side into thedevice wafer 13 by two etching steps. In the first etching step, a trench will be etched into the silicon of thedevice wafer 13, wherein the underlyingsilicon oxide layer 14 can serve as an etching stopper. Then, in a second etching step, the silicon oxide oflayer 14 will be etched, wherein thepolysilicon layer 15 can serve as an etching stopper. - At this point, it is be noted that the invention is not restricted to the construction and manufacture according to
FIG. 39 . Thus, for the micro-electromechanical semiconductor component, one can use also structures as illustrated and explained above with reference toFIGS. 1 to 10 . - Further properties of the invention and of an exemplary application can be described as follows:
- 1. A photolithographically produced transistor on a doped substrate or in a doped trench, wherein
- i. the transistor is electrically connected only with materials which have a thermal expansion coefficient similar to that of the substrate or the trench in which it is placed,
- ii. the transistor is in no or only a very slight mechanical connection to other materials, particularly materials having mechanical properties different from those of the substrate or the trench—herein, particularly field oxides,
- iii. the transistor comprises symmetries,
- iv. the transistor is produced in different process steps by lithography of different geometric, mutually attuned structures, and
- v. these geometric structures whose superposition and cooperation in the production process will result in the transistor, are selected in such a manner that process variations within the process specification limits which cause changes of the geometries of the individual lithography step results in the form of produced geometric structures, will have no or only a very slight effect on the mechanical properties of the transistors.
- 2. The transistor according to
item 1, which is a MOS transistor. - 3. A MOS transistor for detection of mechanical stress, comprising four channel terminals.
- 4. The MOS transistor according to
item 3, which has a four-fold rotational symmetry and a gate plate with exactly this symmetry and channel terminals in an arrangement with exactly this symmetry, without the need of a symmetry of the terminals of this gate plate. - 5. The transistor according to
item 1, which is a bilpoar transistor. - 6. The transistor according to any one of
items 1 to 4, comprising a channel stopper. - 7. The transistor according to any one of
items 1 to 4, of which the source and/or drain regions are electrically connected by a highly doped region or a low-impedance polysilicon. - 8. The transistor according to any one of
items 1 to 7, which is used for detection of mechanical stress. - 9. The transistor according to any one of
items 1 to 8, which is used in the manner of an electric resistor particularly in a measurement bridge. - 10. The transistor according to any one of
items 1 to 9, which is a pnp-transistor. - 11. The transistor according to any one of
items 1 to 9, which is a npn-transistor. - 12. The transistor according to any one of
items 1 to 9, which is a p-channel transistor. - 13. The transistor according to any one of
items 1 to 9, which is an n-channel transistor. - 14. An electronic circuit comprising transistors according to one or a plurality of
items 1 to 13. - 15. An electronic circuit being in a functional relationship to a micro-mechanical device according to
item 41. - 16. The circuit according to
item - 17. The circuit according to any one of
items 14 to 16, which is at least partially produced by monolithic integration. - 18. The circuit according to any one of
items 14 to 17, comprising at least two geometrically identically designed transistors according to any one ofitems 1 to 13. - 19. The circuit according to
item 18, which generates a signal suited for measurement of a different state in at least one physical parameter of the two transistors. - 20. The circuit according to
item 19, wherein said physical parameter is mechanical stress and/or temperature. - 21. The circuit according to any one of
items 18 to 20, wherein at least two of the transistors according to any one ofitems 1 to 13, irrespective of the connecting lines, are arranged symmetrically to each other. - 22. The circuit according to any one of
items 18 to 20, wherein, for at least two of the transistors according to one or a plurality ofitems 1 to 13, it is provided that their geometries, irrespective of the connecting lines, can be brought into mutual congruence through rotation by 90°. - 23. The circuit according to any one of
items 14 to 22, comprising at least four transistors according to any one ofitems 1 to 13. - 24. The circuit according to
item 23, wherein said four transistors are connected to form a measurement bridge. - 25. The circuit according to
item 24, wherein the gate and source of at least one transistor according to any one ofitems 1 to 13 are short-circuited. - 26. The circuit according to
item items 1 to 13 is connected to a reference voltage source. - 27. The circuit according to
item 26, wherein said reference voltage source is a second, but short-circuited measurement bridge according to any one ofitems 24 to 27. - 28. The circuit according to
item 27, wherein said second measurement bridge is similar to the first measurement bridge, particularly regarding the dimensioning of the transistors and/or the circuitry and/or the produced geometries, and/or in the extreme case is a geometric copy of the first measurement bridge. - 29. The circuit according to any one of
items 14 to 28, wherein respectively two of said four transistors are identically oriented while having the same geometry. - 30. The circuit according to
item 29, wherein the transistors of one transistor pair are oriented vertically to the transistors of the other transistor pair. - 31. The circuit according to
item 30, wherein said four transistors are arranged symmetrically in a quadrangle. - 32. The circuit according to
item 30, wherein said four transistors are arranged symmetrically in a cross configuration. - 33. The circuit according to any one of
items 14 to 23 or 29 to 32, comprising at least one differential amplifier circuit. - 34. The circuit according to
item 33, wherein at least one of the transistors of at least one differential amplifier is a transistor according to any one ofitems 1 to 13. - 35. The circuit according to
item - 36. The circuit according to
item 35, wherein said reference voltage source is a second, but short-circuited differential amplifier which is a differential amplifier according to any one ofitems 33 to 35. - 37. The circuit according to
item 36, wherein said second differential amplifier is similar to the first differential amplifier, particularly regarding the dimensioning of the transistors and/or the connection of the transistors and/or the produced geometries of the transistors, and/or in the extreme case is a geometric copy of the first differential amplifier. - 38. The circuit according to any one of
items 14 to 37, wherein at least a part of the circuit is also a part of the micromechanical device. - 39. The circuit according to
item 38, wherein at least a part of the circuit is functionally connected to at least one micromechanical functional element in such a manner that at least one mechanical parameter of at least one micromechanical functional element is coupled to the state function of the circuit or to at least one electrical parameter of the state function of at least one circuit portion. - 40. The circuit according to
item 39, wherein said functional element is particularly a bar or web, a membrane, a resonator, a lip clamped on one side, both sides or three sides, a shield or a needle. - 41. A micromechanical device which has been produced by lithographic processes and by connecting, particularly bonding, at least two wafers, wherein
- I. prior to the connecting of said at least two wafers, at least one micromechanical functional element in the form of at least one surface structure has been applied on at least one surface of at least one of said two wafers, and
- II. after the connecting of the wafers, at least one of the thus produced micromechanical functional elements and respectively surface structures is situated near the boundary surface between the wafers within the resultant wafer package, and
- III. subsequent to the connecting of the wafers, there has been performed, on at least one surface of the resultant wafer package, at least one process for producing of at least one electronic component, and
- IV. at least one of the thus produced electronic components is sensitive to at least one non-electric physical value and is provided to detect the same, and
- V. said component is produced to be self-adjusting.
- 42. The micromechanical device according to
item 41, wherein at least one of said self-adjusting components is a transistor according to any one ofitems 1 to 10 or is a part of the circuit according to any one ofitems 14 to 40. - 43. The micromechanical device according to
items - 44. The micromechanical device according to any one of
items 41 to 43, wherein said at least one micromechanical functional element is at least one cavity. - 45. The micromechanical device according to
item 44, wherein at least one cavity together with at least one surface of the wafer package defines a membrane. - 46. The micromechanical device according to
items - 47. The micromechanical device according to any one of
items 41 to 46, wherein at least one micromechanical functional element is situated on the surface of the device. - 48. The micromechanical device according to
item 47, wherein said at least one micromechanical functional element is a web, a trench, a membrane, a perforation and a buried cavity or a blind hole. - 49. The micromechanical device according to
item 38, wherein at least one micromechanical functional element has been produced on the surface after performing a process, particularly a CMOS process, for producing a transistor according to any one ofitems 1 to 13 or a circuit according to any one ofitems 14 to 40. - 50. The micromechanical device according to any one of
items 41 to 49, wherein at least one micromechanical functional element has been produced inter alia by use of DRIE or plasma etching processes. - 51. The micromechanical device according to any one of
items 41 to 50, which can be used as a pressure sensor. - 52. The micromechanical device according to any one of
items 44 to 51, wherein the geometric shape of at least one cavity comprises symmetries with respect to the connection plane of the wafers. - 53. The micromechanical device according to any one of
items 41 to 52, wherein, on at least one surface of the wafer package, the trenches have been generated by DRIE or plasma etching. - 54. The micromechanical device according to
item 53, wherein at least one partial quantity of the trenches form a closed structure, e.g. a ring, an ellipse, a quadrangle, a star or the like which only at few sites are interrupted bythin webs - 55. The micromechanical device according to
items - 56. The micromechanical device according to
items - 57. The micromechanical device according to
items - 58. The micromechanical device according to
item 57, wherein the bottom of at least one of the trenches together with at least one of the cavities forms a thinner portion of the membrane or an opening leading into this cavity. - 59. The micromechanical device according to any one of
items 41 to 58, wherein micromechanical functional elements of the top side, particularly the trenches mentioned under any one ofitems 47 to 58, are not situated, with their edges defining their shape, above shape-defining edges of micromechanical structures of the bottom side and micromechanical structures of the top side. - 60. The micromechanical device according to
item 59, wherein thelever length 116 between the starting point of astructure 121 therebelow, particularly of a buriedcavity 4, and the starting point of astructure 119 thereabove, particularly of atrench 6, is larger than the smaller one of thevertical lever dimensions 118 and 120 (seeFIG. 38 ). - 61. The micromechanical device according to any one of
items 44 to 60, wherein, within the body of the micromechanical device, particularly during production of the device within the wafer package, at least one cavity is arranged which is connected with the bottom side or top side of the wafer package by at least one micromechanical functional element, particularly a tube. - 62. The micromechanical device according to
item 61, which can be used as a pressure differential sensor against a defined referential pressure or ambient pressure. - 63. The micromechanical device according to
item - 64. The micromechanical device according to
item 63, wherein at least one microfluidic functional element serves or can serve for supply of media such as e.g. liquids and gases. - 65. A micromechanical device, wherein at least one microfluidic functional element according to any one of
items 63 to 64 or a micromechanical functional element according toitem 61 has been produced after performing a process, particularly a CMOS process, for producing a transistor according to any one ofitems 1 to 13 or a circuit according to any one ofitems 14 to 40. - 66. The micromechanical device according to any one of
items 1 to 65, wherein, at least as a partial substrate or substrate, a p-doped semiconductor material has been used. - 67. The micromechanical device according to any one of
items 1 to 65, wherein, at least as a partial substrate or substrate, an n-doped semiconductor material has been used. - 68. The micromechanical device according to any one of
items 44 to 67, wherein, in at least one substrate, a modification of material, e.g. an SiO2 layer, is provided which serves as an etching stopper for the etching of at least one cavity. - 69. The micromechanical device according to any one of
items 53 to 68, wherein, in at least one substrate, a modification ofmaterial 14 is provided which serves as an etching stopper for the etching of at least a part of the trenches. - 70. The micromechanical device according to
item 69, wherein, in at least one substrate, at least one modification ofmaterial 15 is provided which acts as a membrane in the region of the trenches. - 71. The micromechanical device according to
item 70, wherein at least one modification ofmaterial 15 is made of polysilicon and/or amorphous silicon and has been deposited on one of the wafers of the wafer package prior to the wafer bonding. - 72. The micromechanical device according to any one of
items 44 to 67 and 69 to 71, wherein at least one cavity has been etched into at least one substrate in a time-controlled manner. - 73. The micromechanical device according to any one of
items 53 to 68 and 70, wherein at least a part of the trenches have been etched into the substrate in a time-controlled manner. - 74. The micromechanical device according to any one of
items 53 to 73, wherein, prior to the etching of the trenches, a semiconductor process has been performed for producing electrical functional elements on at least one surface of the wafer package. - 75. The micromechanical device according to
item 74, comprising at least one electrical functional element which has been produced in the process according toitem 74. - 76. The micromechanical device according to
item 75, wherein at least one electrical functional element has the function of an electrical line or a contact or a through-hole or an electric line insulator or a resistor or a transistor or a diode or a capacitor or a coil. - 77. The micromechanical device according to
item 76, wherein at least one of the functional elements is operative to change at least one parameter—particularly an electrical parameter—in dependence on mechanical values, particularly tensile stress, compressive stress and shear stress. - 78. The micromechanical device according to
item 77, wherein said change of parameter can be measured externally of the sensor. - 79. The micromechanical device according to
item web - 80. The micromechanical device according to
item - a) at least one first micromechanical functional element, particularly a membrane (12 or 21),
- b) at least two further, second micromechanical functional elements, particularly trenches (6 or 19), and
- c) at least one third micromechanical functional element, particularly a web (8 or 20),
- said functional elements according to a) to c) being in a mechanical functional relationship,
- is positioned on the third micromechanical functional element, particularly web, in such a manner that said at least one electronic functional element is situated on or near the point of highest mechanical stress when the first micromechanical functional element, particularly a membrane or an inertial mass (12 or 21) is deformed, particularly deflected.
- 81. The micromechanical device according to item 80, wherein at least one third micromechanical functional element, particularly a web, is shaped in such a manner that said element has a range of high homogenized mechanical stress in case of deformation of the first micromechanical functional element, particularly a membrane or an inertial mass.
- 82. The micromechanical device according to
item 81, wherein at least one electronic functional element is arranged on at least one such site of high homogenized mechanical stress. - 83. The micromechanical device according to any one of
items 41 to 82, wherein at least two wafers have been formed with different thicknesses. - 84. The micromechanical device according to any one of
items 41 to 82, wherein a wafer material is a silicon or SOI material. - 85. The micromechanical device according to any one of
items 44 to 79, wherein the cavity is produced in the lowermost wafer prior to the bonding of three wafers. - 86. The micromechanical device according to
item 86, wherein said three wafers have been produced with different thicknesses. - 87. The micromechanical device according to any one of
items 53 to 86, wherein at least one of said second micromechanical functional elements is a trench (6 or 19) having a non-constant width. - 88. The micromechanical device according to any one of
items 54 to 87, wherein at least one web does not divide a trench (6 or 19) but only extends into it (see e.g.FIG. 25 ). - 89. The micromechanical device according to any one of
items 54 to 88, wherein, between the webs and trenches, a surface is formed on a membrane which, being suspended on the webs, is quadratic (see e.g.FIG. 20 or 23), rhombic (see e.g.FIG. 21 orFIG. 22 ) or round (e.g.FIG. 24 ). - 90. The micromechanical device according to
item 89, wherein at least one trench has no bottom and thus is connected to at least one cavity. - 91. The micromechanical device according to any one of
items 41 to 90, which can be used as a pressure sensor and/or acceleration sensor. - 92. The micromechanical device according to any one of
items 41 to 91, comprising symmetrically arranged mechanical first functional elements, particularly webs, which are connected to at least one further, second micromechanical functional element, particularly a membrane or inertial mass, and on which respectively mutually similar circuit portions of a circuit according to any one ofitems 14 to 40 are arranged. - 93. The micromechanical device and circuit according to
item 92, wherein the circuit portions arranged on the first micromechanical functional elements are electrically connected to each other in such a manner that average values and/or differences will be formed. - 94. The micromechanical device according to any one of
items 41 to 93, which at least at a first position comprises a first mechanical functional element, particularly a web that is mechanically connected to at least one further, second micromechanical functional element, particularly a membrane, and has a second position being without a mechanical function and being subjected to no or only slight mechanical influence, and wherein, at least at said two positions, respectively mutually similar circuit portions of a circuit according to any one ofitems 14 to 40 are arranged. - 95. The micromechanical device and circuit according to
item 94, wherein the circuit portions arranged at said two positions are electrically connected to each other in such a manner that average values and/or differences will be formed. - 96. The micromechanical device and circuit according to any one of
items 92 to 95, wherein the micromechanical device consists of at least two complete micromechanical partial devices, particularly two pressure sensors according to any one ofitems 92 to 95 which again are in a functional relationship. - 97. The micromechanical device and circuit according to
item 96, wherein, within the circuit, mathematical operations, particularly the formation of average values and differences, are performed on electrical output values of said partial devices. - 98. The micromechanical device and circuit according to any one of
items 94 to 97, wherein at least one second circuit portion being similar to a first circuit portion at said first position, particularly on a web, is used as a reference, particularly voltage reference, and is not in a functional relationship with a micromechanical functional element. - 99. The micromechanical device and circuit according to any one of
items 92 to 98, wherein, to each circuit portion at a first position, at least one circuit portion similar to the circuit portion on the respective web, is assigned as a reference, and wherein said reference is not in a functional relationship with a micromechanical functional element. - 100. The micromechanical device and circuit according to
item 99, wherein said reference is situated on the neutral fiber. - 101. The micromechanical device and circuit particularly according to any one of
items 92 to 100, wherein a part thereof is formed by at least one amplifier circuit. - 102. The micromechanical device and circuit particularly according item 101, wherein said amplifier circuit has a positive and a negative input.
- 103. The micromechanical device and circuit according to any one of
items 1 to 101, which in wide regions is provided with a protection against humidity and/or in- and out-diffusion of protons. - 104. The micromechanical device and circuit according to
item 103, wherein said diffusion protection consists of a silicon-nitride layer. - Further advantages of the invention are:
- 1. Reduction of the number of required wafer bond connections
- 2. Reduction of parasitic elements
- a) Elimination of sources of mechanical stress
- b) Protection against dissipation of unavoidable mechanical stress
- c) Maximization, homogenization and linearization of mechanical useful stress fields
- d) Reduction of the dissipation of electronic components
- e) Reduction of the dissipation of electronic circuits
- f) Reduction of the dissipation of micromechanical functional elements
- 3. Increasing the tolerance of the construction towards mechanical and electrical manufacturing variations
- 4. Reduction of the effects of unavoidable parasitic elements
- 5. Reduction of the influence of the design and connection technology
- 6. Flexibilization of the use of sensors on the side of the user
- 7. Reduction of the required die area
- 8. Possibility of coupling to high-volume standard CMOS lines, particularly such lines with p-doped substrates
- These properties are realized particularly by the measures described hereunder, which can be applied individually or in total or partial combination:
- 1. Reduction of the number of required wafer bond connections by
- a) Producing cavities prior to the CMOS processing
- 2. Reduction of parasitic elements by
- a) Elimination of sources of mechanical stress, particularly by
- i) Avoidance of unnecessary layers on the micromechanical functional elements, particularly on pressure sensor membranes
- b) Protection against dissipation of unavoidable mechanical stress, particularly by
- i) Containment of the stress by mechanical guard rings, and
- ii) Reduction of the depth of cavities in the material, wherein the latter has a higher areal moment of inertia
- c) Maximization, homogenization and linearization of useful stress fields, particularly by
- i) Etching trenches into pressure membranes
- ii) Selection of the trench shape
- iii) Distance between rear-side structures and buried structures on the one hand and front-side structures on the other hand for reduction of adjustment errors
- d) Reduction of the dissipation of electronic components by
- i) Use of self-adjusting structures
- e) Reduction of the dissipation of electronic circuits by
- i) Use of a compact, symmetrical, self-adjusting special transistor
- ii) Use of a compact, symmetrical, self-adjusting differential amplifier stage
- iii) Use of a compact, self-adjusting, symmetrical active Wheatstone bridge
- f) Reduction of the dissipation of micromechanical functional elements by
- i) Use of defined, CMOS-compatible etching stops
- ii) Use of particularly miniaturized special transistors
- a) Elimination of sources of mechanical stress, particularly by
- 3. Increasing the tolerance of the construction towards mechanical and electrical manufacturing variations
- a) Differentiation of the stress direction
- b) Differentiation between stressed and unstressed circuit portions
- c) Differentiation between circuit portions at different symmetry positions
- d) Suitable compensatory connection of circuit portions which can detect the differences i to iii by measuring
- e) Use of particularly miniaturized special transistors
- f) Miniaturization of the mechanical design by well-aimed reduction of the layer stack in the region of micromechanical functional elements
- 4. Reduction of the effects of unavoidable parasitic elements
- a) Compensatory circuits
- b) Use of particularly miniaturized special transistors
- 5. Reduction of the influence of the design and connection technology by
- a) Reduction of the depth of cavities in the material, whereby the material has a higher areal moment of inertia
- b) Use of round cavities, whereby the vertical areal moment of inertia is enlarged
- 6. Flexibilization of the use of sensors on the side of the user by
- a) Adjustability of the amplification by the user
- 7. Reduction of the required die area
- a) Reduction of the depth of cavities in the material, whereby the material has a higher areal moment of inertia and the sensor can be reduced in size without loss of stability
- b) Use of particularly miniaturized special transistors
- c) Forming a minimal access opening for gases and liquids leading to a buried cavity
- 8. Possibility of coupling to high-volume standard CMOS lines, particularly such lines with p-doped substrates
- a) Forming the cavities with defined etching stopper prior to the CMOS process
- b) Production of micromechanical functional elements on the surface, such as trenches, after the CMOS processing, by means of plasma or DRIE etching
- c) Forming minimal access openings leading to buried cavities, after the CMOS processing.
-
- 1. First wafer
- 2. Oxide layer
- 3. Straight wall of
cavity 4 - 4
Cavity 4 - 5 Second wafer
- 6 Trenches in the wafer package
- 7 Thin membrane regions defined by
trenches 6 andcavity 4 - 8 Webs interrupting the
trenches 6 - 8 a Bending element
- 9 Components for detecting the mechanical stress
- 10 Terminals with terminal lines
- 11 Surface of the wafer package
- 12 Central plate of the membrane
- 13 First wafer
- 14 SiO2 layer
- 15 Polysilicon layer
- 16 Second layer
- 17 Second oxide layer
- 18 Cavity
- 19 Trenches
- 20 Webs interrupting the trenches
- 21 Central plate of the membrane
- 22 Components for detecting the mechanical stress
- 23 Terminals with terminal lines
- 24 Surface of the wafer package
- 25 Membrane of small thickness
- 26 Negative terminal of the Wheatstone bridge
- 27 Positive terminal of the Wheatstone bridge
- 28 First clamp for capturing the voltage on the Wheatstone bridge
- 29 Lower p-channel MOS diode of the reference voltage source for the
- Wheatstone bridge
- 30 Upper p-channel MOS diode of the reference voltage source for the
- Wheatstone bridge
- 31 First p-channel MOS transistor of the Wheatstone bridge
- 32 Second p-channel MOS transistor of the Wheatstone bridge
- 33 Third p-channel MOS transistor of the Wheatstone bridge
- 34 Fourth p-channel MOS transistor of the Wheatstone bridge
- 35 Reference voltage line
- 36 Second clamp for capturing the voltage on the Wheatstone bridge
- 37 n+-channel stopper implant
- 38 Gate-
connector transistor - 39 Gate-
connector transistor - 40 n+-doped surface (non-conducting)
- 41 Upper structure sensitive to mechanical stress, e.g. a Wheatstone
- bridge according to
FIG. 12 - 42 Right-hand structure sensitive to mechanical stress, e.g. a Wheatstone
- bridge according to
FIG. 12 - 43 Lower structure sensitive to mechanical stress, e.g. a Wheatstone
- bridge according to
FIG. 12 - 44 First differential amplifier p-channel transistor
- 45 Second differential amplifier p-channel transistor
- 46 Third differential amplifier p-channel transistor
- 47 Fourth differential amplifier p-channel transistor
- 48 Reference voltage for
transistors - 49 Current-source feed line for
transistors - 50 Common drain contact of the p-
channel transistors - 51
Connector transistor 46, negative output knot of the differential amplifier - 52
Connector transistor 45, positive output knot of the differential amplifier - 53
Connector transistor 44, negative output knot of the differential amplifier - 54
Connector transistor 47, positive output knot of the differential amplifier - 55 Third p-channel transistor for reference bridge circuit
- 56 Fourth p-channel transistor for reference bridge circuit
- 57 Upper structure sensitive to mechanical stress, e.g. a Wheatstone
- bridge according to
FIG. 12 as a reference structure for 41 in the region - free of mechanical stress
- 58 Right-hand structure sensitive to mechanical stress, e.g. a Wheatstone
- bridge according to
FIG. 12 as a reference structure for 42 in the region - free of mechanical stress
- 59 Lower structure sensitive to mechanical stress, e.g. a Wheatstone
- bridge according to
FIG. 12 as a reference structure for 43 in the region - free of mechanical stress
- 60 Left-hand structure sensitive to mechanical stress, e.g. a Wheatstone
- bridge according to
FIG. 12 as a reference structure for 44 in the region - free of mechanical stress
- 61 Differential amplifier: current mirror transistor corresponding to transistor
- 69
- 62 Differential amplifier: current mirror transistor corresponding to transistor
- 70
- 63 Differential amplifier: current mirror transistor corresponding to transistor
- 71
- 64 Differential amplifier: current mirror transistor corresponding to transistor
- 72
- 65 Reference amplifier: first differential amplifier p-channel transistor
- 66 Reference amplifier: second differential amplifier p-channel transistor
- 67 Reference amplifier: third differential amplifier p-channel transistor
- 68 Reference amplifier: fourth differential amplifier p-channel transistor
- 69 Reference amplifier: current mirror transistor corresponding to transistor
- 61
- 70 Reference amplifier: current mirror transistor corresponding to transistor
- 62
- 71 Reference amplifier: current mirror transistor corresponding to transistor
- 63
- 72 Reference amplifier: current mirror transistor corresponding to transistor
- 64
- 73 Reference amplifier: n-channel current source transistor (current mirror)
- 74 Reference amplifier: n-channel current source transistor (current mirror)
- 75 Negative terminal
- 76 Positive terminal
- 77 Negative output signal
- 78 Positive output signal
- 78 a Active region pan
- 79 p+-contact implant (source region)
- 79 a Metal line
- 80 p+-contact implant (drain region)
- 80 a Metal line
- 81 Poly gate of a self-adjusting p-channel transistor
- 81 a Gate oxide
- 82 n+-implant region (channel stop)
- 83 n+-implant region (channel stop)
- 84 Feed line of highly doped polysilicon
- 85 First p-channel MOS transistor of the Wheatstone bridge
- 86 Second p-channel MOS transistor of the Wheatstone bridge
- 87 Third p-channel MOS transistor of the Wheatstone bridge
- 88 Fourth p-channel MOS transistor of the Wheatstone bridge
- 89 Left-hand tap
- 90 Right-hand tap
- 91 Negative pole
- 92 Positive pole
- 93 Second group of trenches for decoupling the membrane from the die
- body
- 94 Webs interrupting the group of
second trenches 93 - 95 Third group of trenches for further decoupling the membrane from the
- die body
- 96 Webs interrupting the third group of
second trenches 95 - 97 Boss with grid structure (support structure)
- 98 Bore in the cavity for differential pressure sensors
- 99 Mechanical guard ring for prevention of dissipation of the mechanical
- stress introduced by the bond system
- 100 Left-hand structure sensitive to mechanical stress, e.g. a Wheatstone
- bridge according to
FIG. 12 - 101 One-transistor element
- 102 Negative terminal
- 103 Positive terminal
- 104 Upper transistor left-hand side (p-channel)
- 105 Upper transistor right-hand side (p-channel)
- 106 Lower transistor left-hand side (p-channel)
- 107 Lower transistor right-hand side (p-channel)
- 108 Upper reference transistor (p-channel)
- 109 Lower reference transistor (p-channel)
- 110 Internal reference voltage
- 111 First output
- 112 Second output
- 113 Parasitic first transistor
- 114 Parasitic second transistor
- 115 Entire transistor field plate
- 116 Lever length (here, the example of the
cavity wall 3 to the trench wall) - 117 Example: trench wall
- 118 Height of upper structure (here, by way of example, depth of trench 6)
- 119 Receptor point of the upper structure (here, by way of example, depth of trench 6)
- 120 Height of lower structure (here, by way of example, depth of cavity 4)
- 121 Receptor point of the lower structure (here, by way of example, cavity 4)
Claims (5)
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US13/521,141 Active 2031-04-11 US8975671B2 (en) | 2010-01-11 | 2011-01-10 | Microelectromechanical semiconductor component that is sensitive to mechanical stresses, and comprises an ion implantation masking material defining a channel region |
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US13/521,158 Active 2031-04-02 US8994128B2 (en) | 2010-01-11 | 2011-01-10 | Micro-electromechanical semiconductor comprising stress measuring element and stiffening braces separating wall depressions |
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US13/521,141 Active 2031-04-11 US8975671B2 (en) | 2010-01-11 | 2011-01-10 | Microelectromechanical semiconductor component that is sensitive to mechanical stresses, and comprises an ion implantation masking material defining a channel region |
US13/521,146 Active 2031-02-13 US8841156B2 (en) | 2010-01-11 | 2011-01-10 | Method for the production of micro-electromechanical semiconductor component |
US13/521,168 Active 2031-04-03 US9013015B2 (en) | 2010-01-11 | 2011-01-10 | Micro-electromechanical semiconductor component |
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US14/631,064 Active US9403677B2 (en) | 2010-01-11 | 2015-02-25 | Micro-electromechanical semiconductor component |
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US20130205908A1 (en) * | 2012-02-10 | 2013-08-15 | Metrodyne Microsystem Corporation, R.O.C. | Mems pressure sensor device and manufacturing method thereof |
US20160039661A1 (en) * | 2013-02-22 | 2016-02-11 | Bin Qi | Micromachined ultra-miniature piezoresistive pressure sensor and method of fabrication of the same |
US20170311437A1 (en) * | 2013-12-26 | 2017-10-26 | Industrial Technology Research Institute | Flexible electronic module |
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