CN102714223A - 具有多重氮氧化物层的氧化物-氮化物-氧化物堆叠 - Google Patents
具有多重氮氧化物层的氧化物-氮化物-氧化物堆叠 Download PDFInfo
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- CN102714223A CN102714223A CN2012800001075A CN201280000107A CN102714223A CN 102714223 A CN102714223 A CN 102714223A CN 2012800001075 A CN2012800001075 A CN 2012800001075A CN 201280000107 A CN201280000107 A CN 201280000107A CN 102714223 A CN102714223 A CN 102714223A
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- oxynitride layer
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- oxygen
- silicon
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- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 66
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- 239000010703 silicon Substances 0.000 claims abstract description 49
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- 238000003860 storage Methods 0.000 claims description 47
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- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
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- 239000005952 Aluminium phosphide Substances 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- DYCJFJRCWPVDHY-LSCFUAHRSA-N NBMPR Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C2=NC=NC(SCC=3C=CC(=CC=3)[N+]([O-])=O)=C2N=C1 DYCJFJRCWPVDHY-LSCFUAHRSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PPNXXZIBFHTHDM-UHFFFAOYSA-N aluminium phosphide Chemical compound P#[Al] PPNXXZIBFHTHDM-UHFFFAOYSA-N 0.000 description 1
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- 239000002800 charge carrier Substances 0.000 description 1
- OMBRFUXPXNIUCZ-UHFFFAOYSA-N dioxidonitrogen(1+) Chemical compound O=[N+]=O OMBRFUXPXNIUCZ-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000011221 initial treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
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- 150000002926 oxygen Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/007,533 | 2011-01-14 | ||
| US13/007,533 US8643124B2 (en) | 2007-05-25 | 2011-01-14 | Oxide-nitride-oxide stack having multiple oxynitride layers |
| PCT/US2012/021583 WO2012097373A1 (en) | 2011-01-14 | 2012-01-17 | Oxide-nitride-oxide stack having multiple oxynitride layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102714223A true CN102714223A (zh) | 2012-10-03 |
Family
ID=46507481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012800001075A Pending CN102714223A (zh) | 2011-01-14 | 2012-01-17 | 具有多重氮氧化物层的氧化物-氮化物-氧化物堆叠 |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JP5960724B2 (ko) |
| KR (1) | KR20140025262A (ko) |
| CN (1) | CN102714223A (ko) |
| TW (1) | TWI534897B (ko) |
| WO (1) | WO2012097373A1 (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2831917A4 (en) * | 2012-03-31 | 2015-11-04 | Cypress Semiconductor Corp | OXIDE-NITRIDE-OXIDE STACK WITH MULTIPLE OXYNITRIDE LAYERS |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060261401A1 (en) * | 2005-05-17 | 2006-11-23 | Micron Technology, Inc. | Novel low power non-volatile memory and gate stack |
| US20070121380A1 (en) * | 2005-07-05 | 2007-05-31 | Mammen Thomas | Location-specific nand (ls nand) memory technology and cells |
| US20090152618A1 (en) * | 2007-12-14 | 2009-06-18 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of fabricating the same |
| CN101517714A (zh) * | 2007-05-25 | 2009-08-26 | 塞普拉斯半导体公司 | Sonos ono堆栈等比缩小 |
| US20100096687A1 (en) * | 2008-10-21 | 2010-04-22 | Applied Materials, Inc. | Non-volatile memory having silicon nitride charge trap layer |
| CN101859702A (zh) * | 2009-04-10 | 2010-10-13 | 赛普拉斯半导体公司 | 含多层氧氮化物层的氧化物-氮化物-氧化物堆栈 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6153543A (en) * | 1999-08-09 | 2000-11-28 | Lucent Technologies Inc. | High density plasma passivation layer and method of application |
| JP2002261175A (ja) * | 2000-12-28 | 2002-09-13 | Sony Corp | 不揮発性半導体記憶装置およびその製造方法 |
| US6812084B2 (en) * | 2002-12-09 | 2004-11-02 | Progressant Technologies, Inc. | Adaptive negative differential resistance device |
| US20050109276A1 (en) * | 2003-11-25 | 2005-05-26 | Applied Materials, Inc. | Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber |
| JP4477422B2 (ja) * | 2004-06-07 | 2010-06-09 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置の製造方法 |
| KR100813964B1 (ko) * | 2005-09-22 | 2008-03-14 | 삼성전자주식회사 | 어레이 타입 프린트헤드 및 이를 구비한 잉크젯화상형성장치 |
| US7821823B2 (en) * | 2005-12-02 | 2010-10-26 | Nec Electronics Corporation | Semiconductor memory device, method of driving the same and method of manufacturing the same |
| JP5285235B2 (ja) * | 2006-04-28 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US7692223B2 (en) * | 2006-04-28 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing the same |
| US20090179253A1 (en) * | 2007-05-25 | 2009-07-16 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
| US8643124B2 (en) * | 2007-05-25 | 2014-02-04 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
| JP5238332B2 (ja) * | 2008-04-17 | 2013-07-17 | 株式会社東芝 | 半導体装置の製造方法 |
| WO2010061754A1 (ja) * | 2008-11-28 | 2010-06-03 | 学校法人 東海大学 | 不揮発性半導体記憶装置及びその製造方法 |
-
2012
- 2012-01-12 TW TW101101220A patent/TWI534897B/zh active
- 2012-01-17 CN CN2012800001075A patent/CN102714223A/zh active Pending
- 2012-01-17 JP JP2013549612A patent/JP5960724B2/ja active Active
- 2012-01-17 KR KR1020127008106A patent/KR20140025262A/ko active Search and Examination
- 2012-01-17 WO PCT/US2012/021583 patent/WO2012097373A1/en active Application Filing
-
2016
- 2016-06-22 JP JP2016123646A patent/JP6258412B2/ja active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060261401A1 (en) * | 2005-05-17 | 2006-11-23 | Micron Technology, Inc. | Novel low power non-volatile memory and gate stack |
| US20070121380A1 (en) * | 2005-07-05 | 2007-05-31 | Mammen Thomas | Location-specific nand (ls nand) memory technology and cells |
| CN101517714A (zh) * | 2007-05-25 | 2009-08-26 | 塞普拉斯半导体公司 | Sonos ono堆栈等比缩小 |
| US20090152618A1 (en) * | 2007-12-14 | 2009-06-18 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of fabricating the same |
| US20100096687A1 (en) * | 2008-10-21 | 2010-04-22 | Applied Materials, Inc. | Non-volatile memory having silicon nitride charge trap layer |
| CN101859702A (zh) * | 2009-04-10 | 2010-10-13 | 赛普拉斯半导体公司 | 含多层氧氮化物层的氧化物-氮化物-氧化物堆栈 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201243951A (en) | 2012-11-01 |
| JP5960724B2 (ja) | 2016-08-02 |
| JP6258412B2 (ja) | 2018-01-10 |
| KR20140025262A (ko) | 2014-03-04 |
| WO2012097373A1 (en) | 2012-07-19 |
| JP2016197732A (ja) | 2016-11-24 |
| JP2014504027A (ja) | 2014-02-13 |
| TWI534897B (zh) | 2016-05-21 |
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