CN102683514A - 发光二极管封装和制造方法 - Google Patents

发光二极管封装和制造方法 Download PDF

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CN102683514A
CN102683514A CN2012100576110A CN201210057611A CN102683514A CN 102683514 A CN102683514 A CN 102683514A CN 2012100576110 A CN2012100576110 A CN 2012100576110A CN 201210057611 A CN201210057611 A CN 201210057611A CN 102683514 A CN102683514 A CN 102683514A
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M·马格利特
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Abstract

公开了发光二极管(LED)器件和发光二极管器件的封装。在一些方面，使用包括多个层的垂直构造来制造LED。某些层用于提升器件的机械特性、电特性、热特性或光学特性。所述器件避免了一些设计问题，包括传统LED器件中存在的制造复杂、成本和散热问题。一些实施方案包括多个光学许可层，包括堆叠在半导体LED上方并且使用一个或更多个对准标记定位的光学许可覆盖衬底或晶片。

Description

发光二极管封装和制造方法
技术领域
本申请涉及发光二极管(LED)器件，该LED器件实现在晶片覆盖层上并且提供有允许有效并可重复地制造该LED器件的特征。
相关申请
本申请涉及并要求同时在2011年3月6日提交的美国临时申请No.61/449,685和No.61/449,686的权益和优先权，这两个申请以引用方式被并入本文。
背景技术
发光二极管(LED)是一种半导体器件，其被构造用于接收电力或刺激并且用于通常在可见光谱(光)范围内输出电磁辐射。LED的一些部分含有掺杂的半导体材料，这些掺杂的半导体材料以这种方式工作来使电荷复合，从而从LED材料的本体释放所述光能。这种效应有时被称作电致发光。输出的能量或光由LED的材料和工作条件(包括LED材料的能带隙和LED的电偏置)来限定。
发光二极管(LED)与其他光源相比是有利的，并且尤其可用于某些应用和市场。例如，LED照明通常在能效、紧凑性、坚固且长期寿命设计和形状因子以及其他特征方面提供了益处。与光源耗费的红外或热能相比，在可见电磁波谱中产生的光能的量方面，LED照明相比其他光源是有利的。另外，当与其他灯形式相比时，LED灯包括对环境损害更少的组件，因此更好地适应危害物质限制(RohS)法规。
也就是说，当与其他光源相比时，根据某些量度，传统LED器件的制造成本会相对较高。一个原因在于，对于制造LED，需要精确的封装。LED封装要求合适的清洁条件、与其他半导体制造操作类似的微细加工设施、密封要求、光学要求、LED应用中使用荧光体以及被设计用于操纵器件所产生的热的传导的封装。
传统的LED封装包括晶片级组件技术中使用的硅(Si)基衬底。然而，这些传统技术需要使用载体芯片来支撑LED，这样会使LED器件的制造和封装成本加倍。另外，载体芯片大大增加了器件的热阻率并且对其散热特性产生不利影响。
因此，存在对这样的LED器件的需求，即所述LED器件不遭受以上问题中的一些或全部。
发明内容
公开了发光二极管(LED)器件和发光二极管器件的封装。在一些方面，使用包括多个层的垂直构造来制造LED。某些层用于提升器件的机械特性、电特性、热特性或光学特性。所述器件避免了一些设计问题，包括传统LED器件中存在的制造复杂、成本和散热问题。一些实施方案包括多个光学许可层(permissive layer)，包括堆叠在半导体LED上方并且使用一个或更多个对准标记定位的光学许可覆盖衬底或晶片。
一些实施方案涉及一种发光器件，所述发光器件包括：半导体LED，其包括掺杂区和本征区；导电载体层，其被设置成靠近所述半导体LED的第一表面并且通过金属性界面与所述第一表面分开；光学许可层，其靠近所述半导体LED的第二表面，所述半导体LED的所述第一表面和所述第二表面位于所述半导体LED的相对的面上；光学可限定材料，其靠近所述光学许可层或者位于所述光学许可层内，影响穿过所述光学许可层的发射光的光学特性；以及光学许可覆盖衬底(cover substrate)，其覆盖以上组件中的至少一部分。
其他实施方案涉及在制造环境下在晶片上制成这种发光器件或器件组的方式。具体来讲，实施方案涉及一种制造发光器件的方法，所述方法包括：在设置在导电载体层上的发光器件(LED)中，形成多个掺杂层；在所述导电载体层和所述LED中形成凹陷，以在所述LED的第一掺杂层的一深度处允许与所述LED的所述第一掺杂层电接触；提供与靠近所述导电层的所述LED的第二掺杂层的电接触，以使用在所述LED的所述第一掺杂层和所述第二掺杂层之间施加的偏置电压来偏置所述LED；以及使用光学许可层将所述LED固定于光学许可覆盖衬底，所述光学许可层包括使所述LED产生的光能够穿过的光学可限定材料。
附图说明
为了更充分地理解本发明构思的性质和优点，参考以下对优选实施方案的详细说明并且结合附图，在附图中：
图1图示说明根据现有技术的蓝宝石层上方的半导体LED层；
图2图示说明根据现有技术的通过激光剥离(laser liftoff)形成的示例性发光器件或LED；
图3图示说明根据现有技术的由激光剥离造成的示例性发光器件；
图4图示说明在器件的GaN层的一部分上沉积有金属焊盘的器件；
图5图示说明以上器件的俯视图；
图6图示说明示例性发光器件的剖视图；
图7图示说明LED器件的俯视图；
图8图示说明LED器件的另一个示例性剖视图；
图9图示说明除了在载体层中蚀刻形成凹陷之外与上述发光器件类似的发光器件；
图10图示说明又一个示例性发光器件的剖面；
图11图示说明包括钝化层的与前面描述的器件类似的示例性发光器件；
图12示出与上述器件类似的器件，其中，该器件的钝化层被切割；
图13图示说明发光器件中的以上钝化层的成形边缘；
图14图示说明另一个示例性发光LED器件；
图15图示说明又一个示例性发光器件；
图16图示说明发光器件的又一个实施方案；
图17图示说明示例性发光LED器件；以及
图18图示说明如何能在单个制造平台或晶片上制造与上述器件类似的不止一个LED器件。
具体实施方式
现代LED器件基于半导体材料及其特性。例如，使用氮化镓(GaN)制成某些LED，GaN是适于高功率LED使用的一种带隙半导体。GaN LED通常外延生长在蓝宝石衬底上。这些LED包括P-I-N结器件，该器件具有位于N型掺杂层和P型掺杂层之间的本征(I)层。通过与LED的N型和P型部分耦合的电极或触点，使用合适的电驱动信号来驱动所述器件。根据施加到器件的电动势和器件的构造，电子活动造成从器件的本征部分发射可见电磁辐射(光)。
图1图示说明如上所述的发光器件或LED器件10，该LED器件10在蓝宝石层110上设置有GaN层100(半导体LED)。通常使用一些半导体微细加工技术来处理图1的器件。在一些实施例中，使用本领域技术人员已知的技术，蚀刻掉或去除LED(GaN层)中的一些部分。导电和非导电层的其他应用方式连同用于各种功能的沟道和通孔(如以下将描述的)一起应用于这种基础设计。
图2图示说明包括设置在蓝宝石层210上的半导体(例如，GaN)层200的示例性发光器件或LED20。LED200在一侧进一步耦合到载体层220，载体层220可以是铜或硅。金属性界面225将GaN层200和载体层220分开但提供了GaN层200和载体层220的界面。
应用激光剥离(用230表示)，以致使LED GaN层200与下面的蓝宝石层210分开。在图3中示出激光剥离步骤之后得到的结构。
图3图示说明发光器件30，该发光器件30包括半导体LED层300、金属性界面325和铜或硅(或类似物)载体层320。
图4图示说明与图3中器件类似的器件，其中，金属焊盘430沉积在该器件的GaN层400的一部分上。在实施方案中，GaN层包括其内具有分层的P-I-N结，该P-I-N结包括P型掺杂层、N型掺杂层以及位于P型层和N型层中间的本征(I)半导体层。在操作中，P型层对N型层的电偏置造成从本征层发射光子。
图5图示说明所述器件的俯视图。图中示出与曲折或回旋状或S形或指状顶部电极540连接的金属焊盘530的相对构造，顶部电极540导通GaN LED层500的顶层中的偏置电流。
应该理解的是，GaN型LED不是在本讨论中可采用的唯一一种LED材料，但是本说明只是示例性的，使得本领域的技术人员可以意识到一些优选实施方案以及制造和设计本LED的方法。类似地，在以下优选和示例性的实例中，要理解，许多其他类似和等同的实施方案对于本领域的技术人员将是清楚的并且将实现基本相同的结果。这就本发明实施例中描述的几何形状、布局、构造、尺寸和对材料的选择以及其他方面的变形形式来讲是正确的。具体来讲，可以省略所描述的某些元件和步骤，或者，可以将其他元件作为本文出于图示说明的缘故所描述的元件的替代或补充，而不会实质上影响本公开和发明的范围。
图6图示说明示例性发光器件60的剖视图。器件60包括通过如上所述的金属性界面625与载体层620分开的GaN LED层600。金属焊盘630设置在LED层600上。
将光学透明或透射性粘合层640放置成倚靠LED材料600与载体层620相对的那侧，这意味着，LED 600的一面靠近载体层620而LED 600的另一个相对面靠近透明粘合层640。透明或光学许可粘合层640可以由有机硅或某种其他合适的光可限定材料组成，所述有机硅或某种其他合适的光可限定材料可以提供粘合或环氧树脂的质量，以结合或用机械方式耦合发光器件60的元件。
在透明或光学许可粘合层640内部或接壤透明或光学许可粘合层640的是含有荧光体和/或量子点材料(QD)645的区域。在操作中，从LED层600发射的光子穿过所述光学透明粘合层640以及含有荧光体和/或量子点645的区域。如本文进一步描述的，这造成颜色(波长)得以控制并且发射从LED器件输出的选择性的所需光。
一个、两个或更多个对准标记650设置在透明粘合层530上或设置在透明粘合层530中，并且用于在制造过程中将LED主体对准在覆盖衬底655片上方并且大体对准在伸展的晶片结构中。覆盖衬底655提供LED器件60的元件的结构性状态和机械耦合。对于LED层600发射的波长范围内的光而言，覆盖衬底655也是透明或光学许可性的。
在一些实施方案中，可以将光学透镜660放置在覆盖衬底655上，使其大体位于器件60的LED发光部分的主体上方。透镜660可以用于传播、漫射、准直或者以其他方式重新引导并形成LED的输出。
图7图示说明LED器件70的俯视图。该器件基本上包括以上关于图6描述的元件，包括布置在图案化覆盖衬底710上的LED发光主体700和定位或对准标记750、透镜760并且包括其上的金属焊盘730。在实施方案中，相对于所述对准标记750定位LED。在晶片上的相邻LED之间，存在(例如)50微米的间隔，以便随后对LED进行处理和切片。
将各个LED组装到载体晶片上，使蓝宝石层面对载体晶片层。载体晶片层具有如上所述的光学透明材料，如玻璃或塑料。所述覆盖(cover)可以包括其他光学组件，如透镜或光漫射结构或光引导结构。如所提及的，光子或量子点层使LED产生的光能够转换成其他颜色。最常用的是利用荧光体来使蓝色LED能够发射白光。在一个实施方案中，透镜形状由聚合物或有机硅材料液滴的表面张力来创建。在另一个实施方案中，通过对施用到载体晶片一侧的聚合物进行热压印来创建透镜。可以进一步地将载体晶片图案化，以创建特定液滴形状、尺寸和所要求的表面质量。
图8图示说明LED器件80的另一个示例性剖视图。在载体晶片上创建支座结构837，支座结构837由合适的能提供机械支撑的材料制成。支座结构837可以包括热塑性材料并且通过压印或注塑成型来创建，或者可以通过施用光可限定材料(如聚酰胺(polymide)或焊接掩模)的层并且使用合适的掩模将材料曝光来制成支座结构。支座结构837可以用于包围QD或荧光体材料845，或者可替换地提供用于材料沉积的腔体。
图9图示说明与上述器件类似的发光器件90，不同之处在于，在载体层920中蚀刻形成凹陷，暴露将载体层920与GaN LED层900分开的金属性界面925。该凹陷可以形成器件的电触点的基础。
图10图示说明又一个示例性发光器件1001的剖面。在此，在器件中已经蚀刻形成或创建更深的凹陷1022，使得其延伸通过载体层1020和金属性界面1025并且进入GaN层1000，直达金属焊盘1030。与所暴露的组件形成电接触是可能的，或者可以进一步利用如以下描述的适合的材料来填充所述组件。
图11图示说明包括钝化层1170的与前面描述的器件类似的示例性发光器件1101，所述钝化层1170已被施用来环绕器件的某些部分，位于LED半导体层1100、金属性界面1125和载体层1120周围。钝化材料1170填充之前描述的所述腔体或凹陷1122。钝化层1170可以包括非导电层并且可以由SiO2、SiN、AlN、Al2O3或有机材料如环氧树脂或电泳沉积涂料(如在汽车工业中使用的)构成，或者可以通过喷涂形成。在一个实施方案中，根据材料和所要求的电钝化水平，钝化层1170的厚度范围是1微米至40微米。在实施方案中，在制造期间，钝化层1170以共形的方式覆盖LED之间的间隔。在另一个实施方案中，LED之间的间隔未被覆盖，或者可供选择地，在机械加工(如，切片)的过程中被暴露。LED器件1101的其他元件类似于上述类似的元件。
图12示出与上述器件类似的器件，不同之处在于，钝化层1270已被切割并且确定尺寸以暴露器件中的肩状物(shoulder)1202，可以以如图13所示的斜面或成一定轮廓或成角度的方式来使肩状物1202成形，以提供镜面化表面1302，用于将光反射到发光器件1301外部。钝化层1370或肩状物1302可以以这样的方式被图案化，以通过使钝化层1370或肩状物1302的边缘成角度或成形来提供(例如)光学反射性。
图14图示说明另一个示例性发光LED器件1401。之前讨论的以类似方式标号的元件与本示例性实施方案中的元件相同或类似。在此，在一个实施方案中，通过使用激光进行钻孔或蚀刻，在钝化层材料1470中形成接触孔1472、1474。这样暴露了金属焊盘1430处的第一触点1472和载体1420处的第二触点1474。如果使用的是SiN或SiO2，则还可以使用等离子体蚀刻来创建接触孔。
如果使用激光来钻穿钝化层1570(如图15所示)，则激光钻孔可以止于如上的金属焊盘(盲孔)，或者激光钻孔可以持续进行，以穿透金属焊盘1530(如图15所示)从而与其形成电接触。
注意的是，如上所述，切割或蚀刻掉钝化层1075，从而至少为靠近激光打孔的凹陷1072的N型半导体和靠近金属化层1020的部分1074的P型半导体提供导电通路。
图16图示说明发光LED器件1601的又一个实施方案。在此，将金属晶种层1680施用于钝化层1670上方。金属晶种层1680可以由钛、铬、镍、钯、铂、铜或其组合物中的任一种构成。通过在初始晶种层上方使用溅射，可以加厚晶种层。在一个实施方案中，使用电泳沉积得到的光致抗蚀剂、喷涂抗蚀剂或厚抗蚀剂(在一个实施方案中，大于50微米)，将晶种层1680图案化。抗蚀剂被图案化来创建电走线(electrical routing)连接和凸点下金属化(UBM)。在将抗蚀剂图案化之后，镀上具有限定图案的厚金属层(在一个优选实施方案中，10微米至40微米)。在一个非限制性实施方案中，通过使用湿金属蚀刻，去除抗蚀剂并且蚀刻裸晶种层。在一个实施方案中，施用焊接掩模以形成这种层。在操作中，层1680提供外部电组件和器件的金属化层或导电焊盘之间的增强的导电性。该层1680还提供从LED层1600的最大程度的增强的散热。可以提供通过钻孔形成的孔1685，以允许与金属焊盘1630形成电接触，或者可以在孔形成之后用某种导电或非导电材料来填充。
图17图示说明示例性发光LED器件1701，其中，钝化层1770和金属化层1780的边缘已在其边缘处被形成斜面、被切割、被成型、被浇注、被成形或者以其他方式形成一定轮廓，从而形成适于将光向上反射到器件外部的构造。在一些实施方案中，金属化层1780充当镜面镀银层，用于实现以上结果。
图18图示说明如何能在单个制造平台或晶片上制造如同上述器件的不止一个LED器件。在此，在制造两个LED单元1801和1802的金属化步骤中，将这两个单元电连接。LED可以并联、串联或者利用串-并联的组合连接。这些可以被切开，或者在其他实施方案中，可以在不进行切割的情况下就被布置在衬底上，以形成多个LED的单元或光源。
本发明不应该被视为限于上述具体实施方案，而是应该被理解为涵盖如本发明权利要求书完全地阐述的本发明的所有方面。本发明所属领域的技术人员在阅读了本公开之后，将很容易清楚本发明可能可应用的各种修改形式、等同处理以及多种结构。权利要求书旨在涵盖这样修改形式。

Claims (10)

1.一种发光器件，所述发光器件包括：
半导体LED，所述半导体LED包括掺杂区和本征区；
导电载体层，所述导电载体层被设置成靠近所述半导体LED的第一表面并且通过金属性界面与所述第一表面分开；
光学许可层，所述光学许可层靠近所述半导体LED的第二表面，所述半导体LED的所述第一表面和所述第二表面位于所述半导体LED的相对的面上；
光学可限定材料，所述光学可限定材料靠近所述光学许可层或者位于所述光学许可层内，影响穿过所述光学许可层的发射光的光学特性；以及
光学许可覆盖衬底，所述光学许可覆盖衬底覆盖以上组件中的至少一部分。
2.根据权利要求1所述的发光器件，还包括覆盖所述光学透射性覆盖衬底的至少一部分的透镜。
3.根据权利要求1所述的发光器件，还包括位于所述半导体LED和所述光学许可层之间的金属焊盘。
4.根据权利要求1所述的发光器件，还包括设置在所述导电载体层上的钝化层，所述钝化层基本上是非导电的并且还设置有至少一对孔，以便导电电极与所述钝化层的连接。
5.根据权利要求4所述的发光器件，所述钝化层还包括成形边缘，所述成形边缘被构造用于将所述发光器件产生的光从所述成形边缘向外反射。
6.根据权利要求1所述的发光器件，还包括机械偏置构件，所述机械偏置构件提供所述光学许可层和所述半导体LED层之间的空间间隔。
7.根据权利要求1所述的发光器件，还包括至少一个对准标记，所述至少一个对准标记指示在包括所述光学许可覆盖的一加工衬底中所述器件相对于所述光学许可覆盖的所要求位置。
8.一种制造发光器件的方法，所述方法包括：
在设置在导电载体层上的发光器件(LED)中，形成多个掺杂层；
在所述导电载体层和所述LED中形成凹陷，以在所述LED的第一掺杂层的一深度处允许与所述LED的所述第一掺杂层电接触；
提供与靠近所述导电层的所述LED的第二掺杂层的电接触，以使用在所述LED的所述第一掺杂层和所述第二掺杂层之间施加的偏置电压来偏置所述LED；以及
使用光学许可层将所述LED固定于光学许可覆盖衬底，所述光学许可层包括使所述LED产生的光能够穿过的光学可限定材料。
9.根据权利要求8所述的方法，还包括将电绝缘钝化层施用于所述导电载体层，并且进一步在所述钝化层中提供至少一对孔，以便对应的成对偏置电极与对应的所述LED的所述第一掺杂层和所述第二掺杂层的电耦合。
10.根据权利要求9所述的方法，还包括在所述LED上放置一个或更多个对准标记，以使所述LED能相对于所述光学许可覆盖衬底正确定位。
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